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    MA22D410G

    Abstract: MA22D41
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D410G Silicon epitaxial planar type For rectification • Overview  Package  Forward current (Average) IF(AV) = 2.0 A rectification is possible  Low forward voltage VF


    Original     		PDF 2002/95/EC) MA22D410G MA22D410G MA22D41

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D410G Silicon epitaxial planar type For rectification • Overview  Package  Forward current (Average) IF(AV) = 2.0 A rectification is possible  Low forward voltage VF


    Original     		PDF 2002/95/EC) MA22D410G MA22D410G

    re7 tl

    Abstract: MA22D41 MA22D410G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA22D410G Silicon epitaxial planar type For rectification • Overview  Package  Forward current (Average) IF(AV) = 2.0 A rectification is possible  Low forward voltage VF


    Original     		PDF 2002/95/EC) MA22D410G MA22D410G re7 tl MA22D41

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    Untitled

    Abstract: No abstract text available
    Text: Enhanced downsizing and power saving in power supply circuits in mobile applications 1 to 1.5A class Schottky Barrier Diode MA21Dx××G/MA22D×××G Series „ Overview This newly developed 1 to 1.5A class of Schottky barrier diode is compact and high-performance, suitable for power


    Original     		PDF MA21DÃ G/MA22DÃ typ200 MA21D380G MA21D382G MA22D280G MA22D390G MA22D400G MA22D410G M00720DE

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291

    MA3DF30

    Abstract: MIP2F mip2fx MIP2KX PANASONIC SC107A IC 4026 internal structure MIP2K MA3DF46 ma3df46* ma3df30 MA2YD260G
    Text: 2009 ver. 2 Diode Series %JPEF4FSJFT Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF