MA3Z080E Search Results

MA3Z080E Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MA3Z080E		Panasonic	Silicon epitaxial planar type		Original	PDF
MA3Z080E		Panasonic	Diode		Original	PDF

MA3Z080E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Band Switching Diodes MA3Z080D, MA3Z080E MA80WA, MA80WK Silicon epitaxial planar type (0.425) Unit: mm 0.3+0.1 –0.0 For band switching 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 5˚ M Di ain sc te on na tin nc ue e/ d • Low forward dynamic resistance rf • Less voltage dependence of diode capacity CD	Original	MA3Z080D, MA3Z080E MA80WA, MA80WK)	PDF
MA3Z080D Abstract: MA3Z080E M1X marking Text: Band Switching Diodes MA3Z080D, MA3Z080E Silicon epitaxial planar type Unit : mm For band switching 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD	Original	MA3Z080D, MA3Z080E MA3Z080D MA3Z080E M1X marking	PDF
MA3Z080D Abstract: MA3Z080E MA80WA MA80WK M1Y diode Text: Band Switching Diodes MA3Z080D, MA3Z080E MA80WA, MA80WK Silicon epitaxial planar type (0.425) Unit: mm 0.3+0.1 –0.0 For band switching 0.15+0.10 –0.05 2.1±0.1 5˚ 1.25±0.10 • Low forward dynamic resistance rf • Less voltage dependence of diode capacity CD	Original	MA3Z080D, MA3Z080E MA80WA, MA80WK) MA3Z080D MA3Z080E MA80WA MA80WK M1Y diode	PDF
MA3Z080D Abstract: MA3Z080E MA80WA MA80WK Text: Band Switching Diodes MA3Z080D, MA3Z080E MA80WA, MA80WK Silicon epitaxial planar type (0.425) Unit: mm 0.3+0.1 –0.0 For band switching 0.15+0.10 –0.05 1.25±0.10 • Features 2 0.2±0.1 1 5˚ ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo	Original	MA3Z080D, MA3Z080E MA80WA, MA80WK) MA3Z080D MA3Z080E MA80WA MA80WK	PDF
MA3Z080D Abstract: MA3Z080E MA80WA MA80WK Text: Band Switching Diodes MA3Z080D, MA3Z080E MA80WA, MA80WK Silicon epitaxial planar type Unit : mm For band switching 2.1 ± 0.1 1.25 ± 0.1 0.425 0.425 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD	Original	MA3Z080D, MA3Z080E MA80WA, MA80WK) MA3Z080D MA3Z080E MA80WA MA80WK	PDF
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE	PDF
2SC5936 Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928	PDF