APPENDIX A TTL IC CONNECTION DIAGRAM
Abstract: No abstract text available
Text: MA55452BQB Dual NAND Peripheral Driver FA IR C HILD A S chlum berger C om pany MIL-STD-883 July 1986— Rev 16 Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 8-Lead DIP Top View The (jA55452BQB is a dual high speed general purpose
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MIL-STD-883
MA55452BQB
jA55452BQB
/iA55452BQ
55452BQB
MA55452BQB
CR04900F
APPENDIX A TTL IC CONNECTION DIAGRAM
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Untitled
Abstract: No abstract text available
Text: Int0 rfi Qt ÌOfi QI provisional Data Sheet No. PD-9.338D I R Rectifier JANTX2N6766 HEXFET POWER MOSFET JANTXV2N6766 [REF:MIL-PRF-19500/543] [GENERIC.IRF250] N-CHANNEL 200 Volt, 0.085Q HEXFET HEXFET technology is the key to International Rectifier's advanced line of power MOSFET transistors.The effi
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JANTX2N6766
JANTXV2N6766
MIL-PRF-19500/543]
IRF250]
D025132
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER SI E » - 4855452 0013474 351 « I N R Data Sheet No. PD-3.178A INTERNATIONAL RECTIFIER OCT 0 3 1990 4 0 R IF , 5 0 R IF S E R IE S 63A,8QA RMS MediumPower Fast: Turn-off Thyristors Descri pti on / Featu res Major Ratings and Characteristics
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S-16212
NJ07650.
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irfbc40
Abstract: No abstract text available
Text: HE D I MÛ55452 GODÖLSG 1 | Data Sheet No. PD-9.506A INTERNATIONAL RE CT I F I E R INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRFBC40 IRFBC4S N-CHANNEL 600 Volt, 1.2 Ohm HEXFET TO-220AB Plastic Package Product Summary
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IRFBC40
O-220AB
C-405
IRFBC40,
IRFBC42
C-406
irfbc40
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THYRISTOR BST N 45 B 90
Abstract: thyristor bst m 45 90 Thyristor bst 2 HALF WAVE 45 E 57 20-C1V thyristor YS 160 004 11111I D226 diode irkt91-18 L9500 thyristor bt 3A
Text: i * fl5 5 4 5 2 International ü ^jRectifier □ O lbb'JO GOfl IIN R s e r ie s ir k . 26 , .41, .56 , .71, .91 HIGH VOLTAGE THYRISTOR/ DIODE ADD-A-pak Power Modules and THYRISTOR/ THYRISTOR Features IN T E R N A T IO N A L R E C T IF IE R • ■ E le c tric a lly iso lated b a s e plate
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itfl55452
554S2
001fc
65ohms
500Msf
THYRISTOR BST N 45 B 90
thyristor bst m 45 90
Thyristor bst 2
HALF WAVE 45 E 57 20-C1V
thyristor YS 160 004
11111I
D226 diode
irkt91-18
L9500
thyristor bt 3A
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Untitled
Abstract: No abstract text available
Text: Jp | j - 0 p p q j- j q J p q Provisional Data Sheet No. PD-9.433B I O R Rectifier JANTX2N6802 HEXFET POWER MOSFET JANTXV2N6802 [REF:MIL-PRF-19500/557] [GENERIC:IRFF430] N -C H A N N E L 500 Volt, 1 .5 0 HEXFET Product Sum m arf HEXFET technology is the key to International
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JANTX2N6802
JANTXV2N6802
MIL-PRF-19500/557]
IRFF430]
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IR8200B
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER b5E D • 4ß55452 QQlfllbS 413 ■ INR Data Sheet No. PD-6.012A INTERNATIONA!. RECTIFIER I O R IR8200B 3A, 5 5 V DMOS H-BRIDGE POWER INTEGRATED CIRCUIT 11-PIN MOLDED SIP General Description Features The IR8200B is a 3A H-Bridge designed for motion
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IR8200B
11-PIN
IR8200B
LM3525A
5SM52
QG1S172
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MOSFET J132
Abstract: J132 MOSFET J133 mosfet transistor G524 IRFJ132 T0-213AA J133 mosfet IRFJ130 j132 mosfet j133
Text: H E D | 4 Û SS4 S2 □ □□ci544 4 | Data Sheet No. PD-9.398A INTERNATIONAL R E C T I F I E R T-3 9 -11 INTERNATIONAL RECTIFIER HEXFET TRANSISTORS N -C H A N N E L P O W E R I O R IRFJ130 IRFJ131 f \ 1— 4 \ IRFJ132 M O S F E T s IRFJ133 100 Volt, 0.18 Ohm HEXFET
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T-39-11
IRFJ130
IRFJ131
IRFJ132
IRFJ133
IRFJ130,
G-525
IRFJ131,
MOSFET J132
J132 MOSFET
J133 mosfet transistor
G524
T0-213AA
J133 mosfet
j132
mosfet j133
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Untitled
Abstract: No abstract text available
Text: International í«? Rectifier PD-9.967C IRGKI165F06 “CHOPPER" IGBTINT-A-PAK Fast Speed IGBT Vce=600V • Rugged Design • Simple gate-drive • Fast operation up to 10K H z hard switching, or 50 K H z resonant • Switching-Loss Rating includes all "tail"
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IRGKI165F06
C-181
4A554S5
C-182
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IRF1010S
Abstract: AIT smd
Text: MÖ55HS2 GG14Ö00 International k Rectifier =163 • IN R PD-9.923 IRF1010S INTERNATIONAL HEXFET® Power M O SFET RECTIFIER Advanced Process Technology Ultra Low On-Resistance Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated
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55H52
IRF1010S
SMD-220
AIT smd
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C828 transistors
Abstract: c828 tr c828 tr c828 c829 c829 tr c829 c828 02 diode c829 c826 C825 diode
Text: International ^Rectifier PD-9.955B IRGTI115U06 Ultra-fast Speed IGBT "HALF-BRIDGE" IGBT INT-A-PAK V ce = 600V • Rugged Design •Simple gate-drive • Ultra-fast operation up to 25KHz hard switching, or 10OKHz resonant •Switching-Loss Rating includes all "tail"
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IRGTI115U06
25KHz
100KHz
C-829
100nH
0020b20
C-830
C828 transistors
c828
tr c828
tr c828 c829
c829
tr c829
c828 02
diode c829
c826
C825 diode
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Untitled
Abstract: No abstract text available
Text: MflSSMS2 0015332 330 M I N R International lj«R Rectifier _ IRL510S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • rU'y'yU Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive
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IRL510S
SMD-220
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Untitled
Abstract: No abstract text available
Text: E?R R ectifie PD-9.3261 4A554S2 D014baD 3fl4 H I N R International INTERNATIONAL RECTIFIER E5E ]> IR F610 HEXFET P o w e r M O S F E T • • • • • Dynam ic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirem ents
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4A554S2
D014baD
O-220
IRF610
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Untitled
Abstract: No abstract text available
Text: International PD - 9.1131A Rectifier IRGBC20M-S INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGBC20M-S
10kHz)
4AS54S2
SMD-220
C-340
MA55452
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Untitled
Abstract: No abstract text available
Text: Bulletin 127095 rev. A 08/97 International IS R Rectifier IRK.L132. SERIES INT-A-pak Power Modules FAST RECOVERY DIODES Features • Fast recovery tim e characteristics ■ E lectrically Isolated base plate ■ Industrial standard package ■ Sim plified m echanical designs, rapid assem bly
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I27095
003GlfiS
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Untitled
Abstract: No abstract text available
Text: International iijR Rectifier 4655452 0015^10 bTO • INR HEXFET Power MOSFET • • • • PD-9.845 IRLI540G INTERNATIONAL RECTIFIER Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive bSE J> V dss - 100 V
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IRLI540G
O-220
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diode n55
Abstract: No abstract text available
Text: Preliminary Data Sheet No. PD-9.925 International [reHRectifier 1R G T 1 0 0 2 5 M 1 2 "HALF-BRIDGE" INT-A-PAK MODULES Fast™ IGBT VCE = 1200V 'C DC = 2 5 A .Rugged Design • Simple gate-drive • Fast operation up to 10 kHz hard switching, or 50 kHz resonant
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IRGTI0025M12
G0220flfl
diode n55
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UA317
Abstract: Fairchild dtl catalog free transistor equivalent book 2sc lm741 MA339PC MA725HM MA7805KM UA759 gi 9640 diod MA4136PC
Text: $9.9! •— r c m m pq, F A IR C H IL D A S chlum berger C om pany Linear Data Book Linear Division Introduction The Linear Data Book includes the standard linear product line plus our new W inchester Disk Drive circuits and CLASIC standard cells. For ease o f reference linear
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S-11743
S-16308
CH-1218
UA317
Fairchild dtl catalog
free transistor equivalent book 2sc
lm741
MA339PC
MA725HM
MA7805KM
UA759
gi 9640 diod
MA4136PC
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g598
Abstract: IRFH250 irfh260 A220 DLP 100-C 22E8 irfh25u 9411a G595
Text: HE 0 § Mfl554SE INTERNATIONAL 3 | Data Sheet No. PD-9.411A RECTIFIER I“ R INTERNATIONAL RECTIFIER T-39-13 HEXFET TRANSISTORS IRFHS50 N - C H A IN IIM E L M O S F E T s Features: 200 Volt, 0.090 Ohm HEXFET T he HEXFET® technology is the key to International
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s54s2
T-39-13
IRFH25Ã
G-597
IRFH250
G-598
g598
irfh260
A220 DLP
100-C
22E8
irfh25u
9411a
G595
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IRGNI140U06
Abstract: No abstract text available
Text: International Ili»«]Rectifier PM972B IRGNI140U06 "CHOPPER" IGBT INT-A-PAK Ultra-fast Speed IGBT High Side Switch ;- ° 3 V CE = 6 0 0 V •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 10OKHz resonant
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IRGNM40U06
25KHz
10OKHz
17-Test
C-812
0020b02
IRGNI140U06
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Untitled
Abstract: No abstract text available
Text: International IQ R Rectifier P D - 9.1644 IRL1004S/L PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Surface Mount IRL1004S Low-profile through-hole (IRL1004L) Advanced Process Technology Surface Mount Ultra Low On-Resistance Dynamic dv/dt Rating
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IRL1004S/L
IRL1004S)
IRL1004L)
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Untitled
Abstract: No abstract text available
Text: International K Rectifier PD 9.1096A IRF7104 PRELIMINARY HEXFET® Power MOSFET • • • • • • • Advanced Process Technology Ultra Low On-Resistance Dual P-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
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IRF7104
applicatio50
554S2
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Irgbc20fd2
Abstract: No abstract text available
Text: International PD - 9.788 ^Rectifier IRGBC20FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECO VERY DIODE Fast CoPack IGBT Features • Switching-loss rating includes all “tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to
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IRGBC20FD2
10kHz)
T0-22QAB
C-100
Irgbc20fd2
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Untitled
Abstract: No abstract text available
Text: International iroi Rectifier Data Sheet No. PD-1.016B Series CS60 Microelectronic Power IC Relay 300mA 20-280V AC CHIPSWITCH DIP RELAY GENERAL DESCRIPTION S'X Power IC Chips 5.0 Amp Surge 4000V RMS Isolation Zero Voltage Turn-On EMI Meets FCC/VDE Limits
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300mA
0-280V
200V/usee
GD24142
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