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XG403 Abstract: max9187 MA9187 DS3480-3 GEC Plessey Semiconductors Text: MA9187 APRIL 1995 DS3480-3.2 MA9187 RADIATION HARD 65536 x 1 BIT STATIC RAM The MA9187 64k Static RAM is configured as 65536 x 1 bits and manufactured using GPS’s CMOS-SOS high performance, radiation hard, 1.5µm technology. The device has separate input and output terminals controlled	Original	PDF	MA9187 DS3480-3 MA9187 XG403 max9187 GEC Plessey Semiconductors
Untitled Abstract: No abstract text available Text: GEC PLE SS EY w s I rvi i c o n D u i o k s DS3480-2.4 MA9187 RADIATION HARD 65536 X 1 BIT STATIC RAM The MA9187 64k Static RAM is configured as 65536 x 1 bits and manufactured using GPS’s CMOS-SOS high performance, radiation hard, 1.5 xm technology. Thedevice has separate input and outputterminals controlled	OCR Scan	PDF	DS3480-2 MA9187 MA9187 37bfi522
Untitled Abstract: No abstract text available Text: GEC P L E S S E Y S i S E M I C O N D U C T O R S DS3480-3.2 MA9187 RADIATION HARD 65536 X 1 BIT STATIC RAM The MA9187 64k Static RAM is configured as 65536 x 1 bits and manufactured using GPS’s CMOS-SOS high performance, radiation hard, 1.5ftm technology.	OCR Scan	PDF	DS3480-3 MA9187 MA9187 45lanetary/high
Untitled Abstract: No abstract text available Text: G E C P L E S S E Y ma9187 — !t— — MB— • — — Radiation Hard 65536x1 Bit Static RAM Preliminary Data S10309PDS Issue 2.3 October 1990 Features • 1.5\|im CMOS-SOS technology • Latch-upfree • Fast access time 45ns typical • Total dose 10* rad (Si)	OCR Scan	PDF	ma9187 65536x1 S10309PDS MA9187 65536x1 Cobalt-60
Untitled Abstract: No abstract text available Text: Si GEC P L ES S E Y A P R IL 1995 SEMICONDU CT OR S DS3480-3.2 MA9187 RADIATION HARD 65536 x 1 BIT STATIC RAM T he M A9187 6 4 k Static RAM is configured as 65536 x 1 bits and m anufactured using G P S ’s C M O S -S O S high perform ance, radiation hard, 1.5 ^m technology.	OCR Scan	PDF	DS3480-3 MA9187 A9187