nve magnetoresistance
Abstract: AAT001-10E position sensor SB-00-024 TMR Sensor AAT001 angle position sensors
Text: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs Available
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AAT001-10E
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nve magnetoresistance
position sensor
SB-00-024
TMR Sensor AAT001
angle position sensors
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Tunneling Magnetoresistance
Abstract: AAT001-10E
Text: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs for Direction Detection
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AAT001-10E
Tunneling Magnetoresistance
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Angle sensor magnetoresistance
Abstract: SB-00-024 AAT001-10E TMR Sensor AAT001 nve magnetoresistance Tunneling Magnetoresistance Position Sensors
Text: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs Available
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AAT001-10E
SB-00-024;
Angle sensor magnetoresistance
SB-00-024
TMR Sensor AAT001
nve magnetoresistance
Tunneling Magnetoresistance
Position Sensors
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Untitled
Abstract: No abstract text available
Text: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs for Direction Detection
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MA 7805 tesla
Abstract: TESLA MA 7805 relative permittivity of permalloy ring core permalloy bh curve Anisotropic magnetoresistance compass angle position sensors relative magnet permeability ring core permalloy curve 7805 n-p-n transistor right siemens wheel speed sensor PWM
Text: Magnetoresistance MR Transducers And How to Use Them as Sensors 1st. Edition, July 2004 Perry A. Holman, Ph.D. ii Copyright c 2004 Honeywell International Inc. All rights reserved. Acknowledgments The author would like to thank Dr. James R. (Bob) Biard for many, many late night
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Magnetic Field Sensor
Abstract: max 232 DM-232
Text: DM-232 Magnetoresistance Element For the availability of this product, please contact the sales office. Description DM-232 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate. It is
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DM-232
DM-232
M-118
4400A/m
Magnetic Field Sensor
max 232
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magnetic sensor
Abstract: Magnetic Field Sensor DM-231
Text: DM-231 Magnetoresistance Element For the availability of this product, please contact the sales office. Description DM-231 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate. It is
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DM-231
M-118
4400A/m
magnetic sensor
Magnetic Field Sensor
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TLE5011
Abstract: Y135 M135 Angle sensor magnetoresistance
Text: February 2009 TLE5011 GMR-Based Angular Sensor Application Note TLE5011 Calibration V 1.1 Sensors Edition 2009-02-26 Published by Infineon Technologies AG 81726 München, Germany 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or
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TLE5011
TLE5011
Y135
M135
Angle sensor magnetoresistance
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magnetic resistance element
Abstract: DC12V
Text: MR Sensors TDM Series Magneto-Resistance Device High-Sensitivity in Weak Magnetic Fields and High-Speed Response Capability are Offered Together FEATURES ¡ Compact and light weight. ¡ Ferromagnetic thin films made from a permalloy or a nickel-cobalt alloy as an element
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35tensity
TDM0203
magnetic resistance element
DC12V
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HMC1501
Abstract: Anisotropic magnetoresistance Wheatstone Bridge HMC1512 H BRIDGE 80 A AMR sensor proximity sensor design Angle sensor magnetoresistance Rotary Sensors
Text: SENSOR PRODUCTS APPLICATIONS Linear Displacement Angular Displacement Linear / Angular / Rotary Displacement Sensors HMC1501 / HMC1512 Motor Control Valve Position H Proximity Detection Current Spike Detection Not actual size igh resolution, low power MR sensor
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HMC1501
HMC1512
Anisotropic magnetoresistance
Wheatstone Bridge
HMC1512
H BRIDGE 80 A
AMR sensor
proximity sensor design
Angle sensor magnetoresistance
Rotary Sensors
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HL-Planartechnik
Abstract: magnetic sensor circuit diagram Anisotropic magnetoresistance datasheets r 1004 transistor sensor magnetic presence "Magnetic Field Sensor" Specialties MS32 Lucas Sensor
Text: MS32 Switching Sensor • • • AMR Switching-Sensor TDFN Outline 2.5x2.5x0.8 mm3 Temperature Compensated Switching Point Low Power Consumption • DESCRIPTION The MS32 is a magnetic field sensor which is built in the form of a Wheatstone bridge. Each of its four
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HMC1512
Abstract: HMC1501 "MR sensor"
Text: SENSOR PRODUCTS Preliminary APPLICATIONS Linear Displacement Angular Displacement Linear / Angular / Rotary Displacement Sensors HMC1501 / HMC1512 Motor Control Valve Position H Proximity Detection Current Spike Detection Not actual size igh resolution, low power MR sensor
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HMC1512
HMC1512
"MR sensor"
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AG930-07
Abstract: AAT001-10E
Text: AG930-07E Angle Sensor Evaluation Kit SN12425A NVE Corporation 800 467-7141 [email protected] www.nve.com Kit Overview Evaluation Kit Features • AAT001-10E Angle Sensor • Part # 12426 Split-Pole Alnico 5 Round Horseshoe Magnet • Unity-Gain Buffer Amplifier
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AG930-07E
SN12425A
AAT001-10E
AG930-07
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HMC1501
Abstract: HMC1512 Wheatstone Bridge "MR sensor"
Text: SENSOR PRODUCTS APPLICATIONS Linear Displacement Angular Displacement Linear / Angular / Rotary Displacement Sensors HMC1501 / HMC1512 Motor Control H Valve Position Proximity Detection Current Spike Detection Not actual size igh resolution, low power MR sensor
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HMC1512
HMC1512
Wheatstone Bridge
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81116
Abstract: 81-116
Text: sony . DM-233 Magnetoresistance Element Description DM-233 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is suitable for angle of rotation detection. Package Outline
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150mVp-p
DM-233
81116
81-116
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41e magnetic sensor
Abstract: magnetic field magnetoresistance element magnetic resistance element
Text: SOI^ Y C O R P / C O M P O N E N T PRODS 4TE 0302303 D 0 0 0 3 1 bfl *î DM-233 ~r-&s~-os~ SONY Magnetoresistance Element Description DM-233 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is
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150mVp-p
DM-230,
DD03171
DM-233
T-65-05
41e magnetic sensor
magnetic field
magnetoresistance element
magnetic resistance element
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permalloy magnetization curve
Abstract: Designing With Magnetoresistive Sensors permalloy magnetization permalloy KMZ10
Text: Honeywell ADVANCE INFORMATION PERMALLOY MAGNETIC FIELD SENSORS OVERVIEW Magnetoresistive MR sensors provide an excellent means of measuring both linear and angular position and displacement. Honeywell magnetoresistive sensors consist of permalloy (NiFe) films deposited on a silicon substrate
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HBSA220)
permalloy magnetization curve
Designing With Magnetoresistive Sensors
permalloy magnetization
permalloy
KMZ10
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Magnetoresistance and sensor
Abstract: DM-230
Text: SONY CORP/COMPONENT PRODS 4RE Ö3ÖE303 D 000315b 5 DM-230 S O N Y . Magnetoresistance Element Description Package Outline Unit: mm DM-230 a magnetic sensor using magnetoresistance effect is composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is
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000315b
DM-230
DM-230
150mVp-p
Magnetoresistance and sensor
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DM 321
Abstract: magnetoresistance element
Text: SONY CORP/COMPONENT PRODS M^E D &3&R3&3 D0031b0 ^ DM-231 SO N Y . Magnetoresistance Element / *•Cq Description r DM-231 a magnetic sensor using magnétorésist ance effect is. composed of ferromagnetic material deposited by evaporation on a silicon substrate.lt is
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D0031b0
DM-231
150mVp-p
A3fl23fi3
QQQ31b3
DM-231
T-65-05
DM 321
magnetoresistance element
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Untitled
Abstract: No abstract text available
Text: b3E D • Honeywell 4 S 5 1 Û 7 2 G Q D 1 1 G 1 151 « H O N B MAGNETIC FIELD SENSORS honeyüiell / s s e c DESCRIPTION SSEC permalloy magnetic field sensors provide an unmatched ability to trade off size, power consumption, and sensitivity. They are fabricated by depositing a thin film of nickel-iron onto a silicon substrate which can have a simple
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DM 321
Abstract: No abstract text available
Text: DM-231 SONY. Magnetoresistance Element Description Unit: mm Package Outline DM-231 a magnetic sensor using magneto resist ance effect is composed of ferrom agnetic material deposited by evaporation on a silicon substrate.lt is suitable fo r angle of rotation detection.
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DM-231
DM-231
150mVp-p
DM 321
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SLP-290B-51
Abstract: 00145B SKS100 msg06 SHS361
Text: Trigger Devices Sensors Hall sensors lc max mA Vc max tV) PD (mW) VH (mV) Rio (12) SHS1Ì0 InSb linear 12 - 200 21 to 55 (1 V/1 kG) 500 to 1500 DP4 SHS210 InSb linear 10 - 150 21 to 55 (1 V/1 kG) 500 to 1500 CP4 SHS211 InSb linear 20 - 150 50 10 85 (1 V/1
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SHS210
SHS211
SHS220
SHS230
SHS260
SHS263
SHS264
SHS311
SHS320
SHS330
SLP-290B-51
00145B
SKS100
msg06
SHS361
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Magnetoresistance and sensor speed
Abstract: No abstract text available
Text: MR Sensors TDM series Magneto-Resistance Device High Sensitivity in Weak Magnetic Fields and High-Speed Response Capability are Offered Together CONSTRUCTION OF MAGNETIC ENCORDER FEATURES Magnetic Recording Medium 1. Compact and light weight. 2. Ferromagnetic thin films made from a permalloy or a nickel-cobalt alloy as an element
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Untitled
Abstract: No abstract text available
Text: S O NY CORP/COMPONENT PRODS MTE 0302303 D GGG31b4 1 DM-232 SONY. -r- 4,-s"-ö>s" Magnetoresistance Element Description Unit: mm Package Outline D M -232 a m agnetic sensor using magnetoresistance effect is com posed of ferrom agnetic m aterial deposited by evaporation on a silicon substrate.lt is
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GGG31b4
DM-232
DDD31b7
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