APT13GP120K
Abstract: 65a3
Text: APT13GP120K 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
|
Original
|
APT13GP120K
O-220
Collector-20)
APT13GP120K
65a3
|
PDF
|
APT13GP120BSC
Abstract: T0-247
Text: APT13GP120BSC 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
|
Original
|
APT13GP120BSC
O-247
Col610)
APT13GP120BSC
T0-247
|
PDF
|
13GP12
Abstract: No abstract text available
Text: APT13GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
|
Original
|
APT13GP120BDF1
O-247
T0-247
13GP12
|
PDF
|
IC 7415
Abstract: APT13GP120K mosfet 600V 50A
Text: APT13GP120K 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
|
Original
|
APT13GP120K
O-220
IC 7415
APT13GP120K
mosfet 600V 50A
|
PDF
|
APT13GP120K
Abstract: IGBT 600V 5A cost DIODE TO-220 1200V 11A TO-220 1200V 11A
Text: APT13GP120K 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
|
Original
|
APT13GP120K
O-220
APT13GP120K
IGBT 600V 5A cost
DIODE TO-220 1200V 11A
TO-220 1200V 11A
|
PDF
|
APT13GP120B
Abstract: T0-247 65a3
Text: APT13GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
|
Original
|
APT13GP120B
O-247
Collector-Em247
APT13GP120B
T0-247
65a3
|
PDF
|
13GP12
Abstract: APT13GP120BD1 13gp120bd1
Text: APT13GP120BD1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
|
Original
|
APT13GP120BD1
O-247
T0-247
13GP12
APT13GP120BD1
13gp120bd1
|
PDF
|
65a3
Abstract: APT13GP120B T0-247
Text: APT13GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
|
Original
|
APT13GP120B
O-247
Collector-Em059)
65a3
APT13GP120B
T0-247
|
PDF
|
IC 7414 datasheet
Abstract: IC 7414 APT13GP120BDF1 T0-247 13A 600V TO247 IGBT
Text: APT13GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
|
Original
|
APT13GP120BDF1
O-247
Collec059)
IC 7414 datasheet
IC 7414
APT13GP120BDF1
T0-247
13A 600V TO247 IGBT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: APT13GP120BDF1 APT13GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
|
Original
|
APT13GP120BDF1
O-247
|
PDF
|
MOSFET 25A 600V
Abstract: APT25GP120BDF1 T0-247 IC-125A mosfet 1200V 25A
Text: APT25GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power
|
Original
|
APT25GP120BDF1
O-247
MOSFET 25A 600V
APT25GP120BDF1
T0-247
IC-125A
mosfet 1200V 25A
|
PDF
|
2SC4272
Abstract: ITR06606 ITR06607 ITR06608 ITR06611
Text: 2SC4272 Ordering number : EN2970A SANYO Semiconductors DATA SHEET 2SC4272 NPN Epitaxial Planar Silicon Transistor 27MHz CB Transceiver Driver Applications Features • Small size making it easy to provide high-density, small-sized hybrid ICs. Specifications
|
Original
|
2SC4272
EN2970A
27MHz
2SC4272
ITR06606
ITR06607
ITR06608
ITR06611
|
PDF
|
T0-247
Abstract: APT13GP120B igbt driver 600V 13A 600V TO247
Text: APT13GP120B APT13GP120B TYPICAL PERFORMANCE CURVES 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
|
Original
|
APT13GP120B
O-247
T0-247
APT13GP120B
igbt driver 600V
13A 600V TO247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Type CGH 85 ºC Computer Grade Aluminum Electrolytic Capacitor 85 ºC, Screw Terminal Capacitors Type CGH screw terminal, computer grade aluminum electrolytic capacitors have excellent reliability and a high ripple current capability making them suitable for
|
Original
|
22T500W5L
CGH312T500X4L
CGH412T500X5L
CGH692T500X8L
CGH272T500X4
CGH362T500X5
CGH621T450V2L
CGH102T450V3L
CGH142T450V4L
CGH182T450V5L
|
PDF
|
|
|
AAT4610A
Abstract: AAT4610AIGV-1-T1 AAT4610AIGV-T1 AAT4610AIJS-1-T1 AAT4610AIJS-T1 SC70JW-8 AAT4610AIGV-1 SOT23-5 313
Text: AAT4610A Current Limited Load Switch General Description Features The AAT4610A SmartSwitch is a current limited Pchannel MOSFET power switch designed for highside load switching applications. This switch operates with inputs ranging from 2.4V to 5.5V, making it
|
Original
|
AAT4610A
AAT4610A
AAT4610AIGV-1-T1
AAT4610AIGV-T1
AAT4610AIJS-1-T1
AAT4610AIJS-T1
SC70JW-8
AAT4610AIGV-1
SOT23-5 313
|
PDF
|
A42 B331
Abstract: 96182 eaton eaton 96182 MS27903-1 ms90311 mil-s-8834 NEC k719 ms24547-1 MS25237 nec k591
Text: Electric Distribution & Controls Switch Catalog Making the Best Better Traditional aerospace component suppliers are being asked to assume even greater levels of responsibility. One trend is that component manufacturers are being asked to increase their subsystem integration
|
Original
|
TF300-5
A42 B331
96182 eaton
eaton 96182
MS27903-1
ms90311
mil-s-8834
NEC k719
ms24547-1
MS25237
nec k591
|
PDF
|
AAT4610
Abstract: AAT4610A AAT4610IGV-1-T1 AAT4610IGV-T1
Text: AAT4610 Current Limited Load Switch General Description Features The AAT4610 SmartSwitch is a current limited Pchannel MOSFET power switch designed for highside load switching applications. This switch operates with inputs ranging from 2.7V to 5.5V, making it
|
Original
|
AAT4610
AAT4610
AAT4610A.
AAT4610A
AAT4610IGV-1-T1
AAT4610IGV-T1
|
PDF
|
marking 1L
Abstract: 1L transistor 3 pin 1L MARKING
Text: SQ2181 CMOS Positive Voltage Regulator Elektronische Bauelemente RoHS Compliant Product Description The SQ2181 of positive, linear requlator feature low quiescent current 50 µA typ. with low dropout voltage and excellent PSRR, thus making them ideal for
|
Original
|
SQ2181
SQ2181
150mA
01-Jun-2002
marking 1L
1L transistor 3 pin
1L MARKING
|
PDF
|
1K182
Abstract: 1K28
Text: SQ2171 CMOS Positive Voltage Regulator Elektronische Bauelemente RoHS Compliant Product Description The SQ2171 of positive, linear requlator feature low quiescent current 50 µA typ. with low dropout voltage and excellent PSRR, thus making them ideal for
|
Original
|
SQ2171
SQ2171
150mA
01-Jun-2002
1K182
1K28
|
PDF
|
ABB DATA SHEET DCS
Abstract: SH7751 EPF10K20RC208-3 Hitachi DSA00380
Text: SH7641 E10A Emulator User’s Manual SH7641 E10A HS7641KCM01HE Renesas Microcomputer Development Environment System Rev.1.00 2003.6.26 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor
|
Original
|
SH7641
HS7641KCM01HE
REJ10B0010-0100H
ABB DATA SHEET DCS
SH7751
EPF10K20RC208-3
Hitachi DSA00380
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TYPICAL PERFORMANCE CURVES APT25GP120BDF1 APT25GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power
|
Original
|
APT25GP120BDF1
O-247
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Microelectronics Limited 1.5 AMP, 3-TERMINAL NEGATIVE REGULATORS \P12QA, IP120, LM120, IP7900A Series, IP7900 Series DESCRIPTION The IP120A/IP7900A/IP7900 series of threeterminal regulators is available with several fixed output voltages making them useful in
|
OCR Scan
|
\P12QA,
IP120,
LM120,
IP7900A
IP7900
IP120A/IP7900A/IP7900
IP120A/LM120/IP7900A/IP7900
O-257
TQ-220
IP120A,
|
PDF
|
Mil-T-23648
Abstract: No abstract text available
Text: Silicon PTC Thermistors Description The positive temperature coefficient of resistance is very large: approximately 0.7%/°C, making these units ideal for use in temperature compensating and sensing applications. Applications include amplifiers, power supplies, transducers,
|
OCR Scan
|
DS125
DS200
DG125122K
DG125
DG125122K
Mil-T-23648
|
PDF
|
DU100
Abstract: No abstract text available
Text: Description The positive temperature coefficient of resistance is very large: approximately 0.7%/°C, making these units ideal for use in temperature compensating and sensing applications. Applications include amplifiers, power supplies, transducers, telemetry, computers, magnetic amplifiers, thermometry,
|
OCR Scan
|
DG125122K
DG125
DG125122K
DU100
|
PDF
|
