Hitachi DSA00772
Abstract: HSE11
Text: AED-208-162A Z HSE11 GaAs Schottky Barrier Diode for SHF Mixer Rev. 1 Sep. 1994 Features Outline • Low noise GaAs schottky. • Low capacitance. (C =0.4pF max) Cathode mark 1 Ordering Information Type No. Mark Package Code HSE11 Cathode mark ERP 2 1. Cathode
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AED-208-162A
HSE11
10sec
16GHz
12GHz
Hitachi DSA00772
HSE11
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AD557
Abstract: AD557JN motorola DAC AN1222 HC05 HC08
Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1222/D AN1222 Arithmetic Waveform Synthesis with the HC05/08 MCUs by Mark McQuilken & Mark Glenewinkel CSIC Applications Freescale Semiconductor, Inc. INTRODUCTION
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AN1222/D
AN1222
HC05/08
AD557
AD557JN
motorola DAC
AN1222
HC05
HC08
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Untitled
Abstract: No abstract text available
Text: SURGE SUPPRESSOR DIODE DAM1MB FEATURES OUTLINE DRAWING • High transient reverse power capability suitable for protecting automobile electronic components etc. Direction of polarity Unit in mm inch Type mark Lot mark 1.5 (0.06) 2.5 (0.1) B27 BN Cathode band
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Untitled
Abstract: No abstract text available
Text: SURGE SUPPRESSOR DIODE DAM2MB FEATURES OUTLINE DRAWING • High transient reverse power capability suitable for protecting automobile electronic components etc. Direction of polarity Unit in mm inch 2.0 (0.08) B2 7 BN 3.6 (0.14) Type mark Lot mark Cathode band
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DO-214AA
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AD557
Abstract: HC08 What is the ad557 AD557 data sheet AN1222 application notes AD557JN AN1222 HC05
Text: Order this document by AN1222/D Freescale Semiconductor AN1222 Arithmetic Waveform Synthesis with the HC05/08 MCUs by Mark McQuilken & Mark Glenewinkel CSIC Applications Freescale Semiconductor, Inc. INTRODUCTION IThis application note is intended to demonstrate the use of Arithmetic Synthesis to create sinusoidal
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AN1222/D
AN1222
HC05/08
AD557
HC08
What is the ad557
AD557 data sheet
AN1222 application notes
AD557JN
AN1222
HC05
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What is the ad557
Abstract: AD557 AD557JN AN1222 HC05 HC08
Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1222/D AN1222 Arithmetic Waveform Synthesis with the HC05/08 MCUs by Mark McQuilken & Mark Glenewinkel CSIC Applications INTRODUCTION IThis application note is intended to demonstrate the use of Arithmetic Synthesis to create sinusoidal
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AN1222/D
AN1222
HC05/08
What is the ad557
AD557
AD557JN
AN1222
HC05
HC08
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DSM3MA4
Abstract: DSM3MA2 DSM3MA1 DSM3MA HITACHI
Text: GENERAL-USE RECTIFIER DIODE DSM3MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark Lot mark 2.0 (0.08) 4.0 (0.16) DCB S A 4 Cathode band 0.2MAX (0.008) 2.5
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Hitachi DSA0047
Abstract: No abstract text available
Text: FAST RECOVERY DIODE DFM3MF TENTATIVE SPECIFICATION FEATURES OUTLINE DRAWING • For high speed switching • Soft recovery, low noise. • Low loss, high efficiency. Unit in mm inch Direction of polarity Type mark DC F F 2 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band
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DSM3MA2
Abstract: DSM3MA1 DSM3MA4 hitachi rectifier Hitachi DSA00276 Hitachi DSA00276599.
Text: GENERAL-USE RECTIFIER DIODE DSM3MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark DC S A 4 2.0 (0.08) 4.0 (0.16) Lot mark Cathode band 0.2MAX (0.008) 2.5 (0.1)
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Hitachi DSA0047
Abstract: No abstract text available
Text: FAST RECOVERY DIODE DFM1MF TENTATIVE SPECIFICATION FEATURES OUTLINE DRAWING • For high speed switching • Soft recovery, low noise. • Low loss, high efficiency. Unit in mm inch Direction of polarity Type mark B Z F F 2 1.5 (0.06) 2.5 (0.1) Lot mark Cathode band
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DSM1MA2
Abstract: hitachi rectifier
Text: GENERAL-USE RECTIFIER DIODE DSM1MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark Lot mark 1.5 (0.06) 2.5 (0.1) B Z B S A 4 Cathode band 2.0 (0.08) 4.3 (0.17)
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DFM3MF HITACHI
Abstract: No abstract text available
Text: FAST RECOVERY DIODE DFM3MF FEATURES OUTLINE DRAWING • For high speed switching • Soft recovery, low noise. • Low loss, high efficiency. Unit in mm inch Direction of polarity Type mark Lot mark 2.0 (0.08) 4.0 (0.16) DCB F F 2 Cathode band 2.5 (0.1) 7.0
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DFM1MF HITACHI
Abstract: No abstract text available
Text: FAST RECOVERY DIODE DFM1MF FEATURES OUTLINE DRAWING • For high speed switching • Soft recovery, low noise. • Low loss, high efficiency. Unit in mm inch Direction of polarity Type mark Lot mark 1.5 (0.06) 2.5 (0.1) B Z B F F 2 Cathode band 2.0 (0.08)
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DAM15
Abstract: DAM15SMC51
Text: SURGE SUPPRESSOR DIODE DAM15SMC OUTLINE DRAWING Direction of polarity Unit in mm min/max Type mark Lot mark Cathode band 2.90 3.20 5.55 6.25 J27 NB1 0.05 0.20 1.95 2.65 6.60 7.15 7.75 8.15 0.15 0.41 FEATURES ・ Glass passivated junction ・ Low incremental surge resistance
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DAM15SMC
DO-214AB
D0-214AB
DAM15
DAM15SMC51
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D0214AC
Abstract: DAM04SMA20 DAM04SMA D0214AC SMA
Text: SURGE SUPPRESSOR DIODE DAM04SMA OUTLINE DRAWING Direction of polarity Unit in mm min/max 1.25 1.65 2.25 2.95 NB1 Type mark Lot mark Cathode band J27 1.95 2.90 3.95 4.60 0.05 0.20 4.80 5.60 0.15 0.41 FEATURES ・ Glass passivated junction ・ Low incremental surge resistance
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DAM04SMA
DO-214AC
D0-214AC
D0214AC
DAM04SMA20
DAM04SMA
D0214AC SMA
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DSM1MA2
Abstract: DSM1MA HITACHI Hitachi DSA0047
Text: GENERAL-USE RECTIFIER DIODE DSM1MA FEATURES OUTLINE DRAWING • For general purpose • High heat-resistant due to glass passivation. Unit in mm inch Direction of polarity Type mark B Z S A 4 1.5 (0.06) 2.5 (0.1) Lot mark Cathode band 2.0 (0.08) 4.3 (0.17)
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BD6020GU
Abstract: BD6030GLS
Text: CCD camera negative power supply LSI BD6030GLS Dimension Unit : mm 0.3±0.1 1PIN MARK 3.0±0.1 1PIN MARK 0.38 4 3 2 1 Features 1) Built-in negative voltage LDO(-8V/-7V select) 2) Thermal shut down function(Auto-reset type) 3) Small and thin package of FLGA12V3
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BD6030GLS
FLGA12V3
BD6020GU
BD6030GLS
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565FHE
Abstract: No abstract text available
Text: RENESAS Code PLBG0565KA-A w S B JEITA Package Code P-LFBGA565-15x15-0.50 D Previous Code 565FHE w S A MASS[Typ.] 0.6g φb A A1 φx M S AB ZD e e A ×4 y S v Index mark Laser mark S B ZE E AH AG AF AE AD AC AB AA Y W V U T R P N M L K J H G F E D C B A Reference
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PLBG0565KA-A
P-LFBGA565-15x15-0
565FHE
565FHE
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Untitled
Abstract: No abstract text available
Text: RENESAS Code PLBG0513KB-A w S B JEITA Package Code P-LFBGA513-15x15-0.50 D Previous Code 513FHE w S A MASS[Typ.] 0.6g φb A A1 φx M S AB ZD e e A ×4 y S v Index mark Laser mark S B ZE E AH AG AF AE AD AC AB AA Y W V U T R P N M L K J H G F E D C B A Reference
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PLBG0513KB-A
P-LFBGA513-15x15-0
513FHE
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Tyco PBT-GF10
Abstract: No abstract text available
Text: Bem. note Merkmal feature MATERIAL IDENTIFICATION CODE ACC.VDA260 Materialkennzeichnung nach VDA260 DATA CLOCK Datumsuhr CAVITY MARK Nestmarkierung FCI COMPANY LOGOTYP FCI Firmenlogo CAVITY-NO. Kammernummrierung REVISION INDEX SEE TABLE Aenderungsindex siehen Tabelle
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VDA260
60kte
PBT-GF10
F693200
PCC0574354
F493200
Tyco PBT-GF10
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Untitled
Abstract: No abstract text available
Text: Bem. note Merkmal feature MATERIAL IDENTIFICATION CODE ACC.VDA260 Materialkennzeichnung nach VDA260 DATA CLOCK Datumsuhr CAVITY MARK Nestmarkierung MVL COMPANY LOGOTYP MVL Firmenlogo CAVITY-NO. Kammernummrierung REVISION INDEX SEE TABLE Aenderungsindex siehen Tabelle
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VDA260
PBT-GF10
F693200
PCC0574354
F493200
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Tyco PBT-GF10
Abstract: PBT-GF10 PBTgf10 connector
Text: Bem. note Merkmal feature MATERIAL IDENTIFICATION CODE ACC.VDA260 Materialkennzeichnung nach VDA260 33.3 DATA CLOCK Datumsuhr CAVITY MARK Nestmarkierung MVL COMPANY LOGOTYP MVL Firmenlogo 35.0 CAVITY-NO. Kammernummrierung REVISION INDEX SEE TABLE Aenderungsindex siehen Tabelle
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VDA260
PBT-GF10
F493200
PCC0574790
F693200
Tyco PBT-GF10
PBT-GF10
PBTgf10 connector
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HSE11
Abstract: 27ma
Text: AED-208-162A Z HSE11 GaAs Schottky Barrier Diode for SHF Mixer HITACHI Features Rev. 1 Sep. 1994 Outline • Low noise GaAs schottky. • Low capacitance. (C =0.4pF max) Cathode mark Ordering Information Type No. M ark Package Code HSE11 Cathode mark ERP
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HSE11
AED-208-162A
HSE11
10sec
27ma
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Untitled
Abstract: No abstract text available
Text: • san co 1/1 CO cñ Ai A* o 2CTABLE 2 M/ - K 7 - 0 TRADE MARK l-M c r h- -AMP X 1 OR LLi -+AMP MANUFACTURING PLACE AMP - JAPAN + <$ OR AMP CHAINA(PRC) lAM P X t t OR AMP KOREA ? ‘ 1 .25±0.05 OIA I .401:0.05 DIA K U <U3*: CTRADE MARK) (HOLE OI Al.25*0.05PUNCHED HOL
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05PUNCHED
7354-LH
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