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    MARK H2 DIODE Search Results

    MARK H2 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MARK H2 DIODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HSU276-Silicon Schottky Barrier Diode for Tuner Mixer, Converter Outline Features • High forward current, Low capacitance. • Ultra small Eesin Package URP is suitable for surface mount design. Cathode mark Mark H2 1CE Ordering Information


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    HSU276 HSU276 200pr PDF

    Mark V6

    Abstract: mark h2 diode
    Text: HVU365-Variable Capacitance Diode for VCXO Features Outline • High capacitance ratio and good C-V linearity. • To be usable at low voltage. • Ultra small Resin ¿Package URP is suitable for surface mount design. Cathode mark Mark — H2 Ordering Information


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    HVU365-----------Variable HVU365 100MHz Mark V6 mark h2 diode PDF

    HVD191

    Abstract: No abstract text available
    Text: HVD191 Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator REJ03G0015-0100Z Rev.1.00 Apr.28.2003 Features • Low capacitance. C ≤ 0.37 pF • Low forward resistance. (rf ≤ 2.5 Ω) • Super small Flat Package (SFP) is suitable for surface mount design.


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    HVD191 REJ03G0015-0100Z HVD191 PDF

    diode h2.2

    Abstract: No abstract text available
    Text: APE-208-017C Z HVU357 Variable Capacitance Diode for VCO HITACHI Features Preliminary Rev. 3 Feb.1993 Outline • Low series resistance. (rs=0.35Q max) • Ultra small Resin Eackage (URP) is suitable for surface mount design. Cathode mark I Mark c Ordering Information


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    HVU357 APE-208-017C 470MHz HVU357 diode h2.2 PDF

    HVD191

    Abstract: PUSF0002ZB-A MARK H2
    Text: HVD191 Silicon Epitaxial Planar Pin Diode for High Frequency Attenuator REJ03G0015-0200 Rev.2.00 Jan 20, 2006 Features • Low capacitance. C = 0.37 pF max • Low forward resistance. (rf = 2.5 Ω max) • Super small Flat Lead Package (SFP) is suitable for surface mount design.


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    HVD191 REJ03G0015-0200 PUSF0002ZB-A HVD191 PUSF0002ZB-A MARK H2 PDF

    T72 diode of 45 kv

    Abstract: No abstract text available
    Text: 1SS244 Diodes Switching diode 1SS244 zApplications High voltage switching General purpose rectification zExternal dimensions Unit : mm CATHODE BAND (BLACK) TYPE NO. (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 2 4 4 2.7±0.3


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    1SS244 DO-34 T72 diode of 45 kv PDF

    Untitled

    Abstract: No abstract text available
    Text: RB441Q-40 Diodes Schottky barrier diode RB441Q-40 zApplications Low current rectification zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) Low VF, Low IR 3) High reliability S 3


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    RB441Q-40 DO-34 PDF

    1SS133

    Abstract: do-34 rohm
    Text: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction


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    1SS133 DO-34 1SS133 do-34 rohm PDF

    RB721Q-40

    Abstract: T-77 ROHM RB721Q
    Text: RB721Q-40 Diodes Schottky barrier diode RB721Q-40 zApplications Low current rectification zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) Low VF, Low IR 3) High reliability S 2


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    RB721Q-40 DO-34 RB721Q-40 T-77 ROHM RB721Q PDF

    Untitled

    Abstract: No abstract text available
    Text: RB441Q-40 Diodes Schottky barrier diode RB441Q-40 zApplications Low current rectification zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) Low VF, Low IR 3) High reliability S 3


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    RB441Q-40 DO-34 PDF

    Untitled

    Abstract: No abstract text available
    Text: RB160A40 Diodes Schottky barrier diode RB160A40 zApplications General rectification z External dimensions Unit : mm φ0.4±0.1 zFeatures 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low IR. 4) High ESD. 2.7±0.3 T-31 29±1 T-31 29±1 φ1.8±0.2


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    RB160A40 PDF

    1SS133 T-77

    Abstract: No abstract text available
    Text: 1SS133 Diodes Switching diode 1SS133 zApplications High speed switching zExternal dimensions Unit : mm CATHODE BAND (YELLOW) φ0.40.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 291 2.70.3 291 φ1.80.2 ROHM : MSD JEDEC : DO-34 zConstruction


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    1SS133 DO-34 1SS133 T-77 PDF

    marking code fairchild

    Abstract: 1N4738A fairchild
    Text: 1N4728A - 1N4758A Zener Diodes Tolerance = 5% DO-41 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings * Symbol PD TJ, TSTG Ta = 25°C unless otherwise noted Value Units Power Dissipation @ TL ≤ 50°C, Lead Length = 3/8” Parameter 1.0 W Derate above 50°C


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    1N4728A 1N4758A 1N4758A DO-41 1N4729A 1N4730A 1N4731A 1N4732A marking code fairchild 1N4738A fairchild PDF

    GENERAL SEMICONDUCTOR SM 3b diode

    Abstract: 1n5224b fsc 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B
    Text: 1N5221B - 1N5263B Zener Diodes Tolerance = 5% DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units PD Power Dissipation 500 Derate above 50°C 4.0 Storage Temperature Range -65 to +200


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    1N5221B 1N5263B DO-35 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B GENERAL SEMICONDUCTOR SM 3b diode 1n5224b fsc 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B PDF

    MTZJ6.8B

    Abstract: No abstract text available
    Text: MTZJ6.8B Diodes Zener diode MTZJ6.8B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3. 6 B 2.7±0.3 29±1 29±1


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    DO-34 MTZJ6.8B PDF

    MTZJ16B

    Abstract: mtzj 158
    Text: MTZJ16B Diodes Zener diode MTZJ16B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3. 6 B 2.7±0.3 29±1 29±1 φ1.8±0.2


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    MTZJ16B DO-34 MTZJ16B mtzj 158 PDF

    Untitled

    Abstract: No abstract text available
    Text: MTZJ6.2B Diodes Zener diode MTZJ6.2B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3. 6 B 2.7±0.3 29±1 29±1


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    DO-34 PDF

    Untitled

    Abstract: No abstract text available
    Text: MTZJ3.6B Diodes Zener diode MTZJ3.6B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3. 6 B 2.7±0.3 29±1 29±1


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    DO-34 PDF

    MTZJ33B

    Abstract: MTZJ4.7B pf 5b g1
    Text: MTZJ33B Diodes Zener diode MTZJ33B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3. 6 B 2.7±0.3 29±1 29±1 φ1.8±0.2


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    MTZJ33B DO-34 MTZJ33B MTZJ4.7B pf 5b g1 PDF

    MTZJ18B

    Abstract: MTZJ18B T-77
    Text: MTZJ18B Diodes Zener diode MTZJ18B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3. 6 B 2.7±0.3 29±1 29±1 φ1.8±0.2


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    MTZJ18B DO-34 MTZJ18B MTZJ18B T-77 PDF

    Untitled

    Abstract: No abstract text available
    Text: MTZJ5.1B Diodes Zener diode MTZJ5.1B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3. 6 B 2.7±0.3 29±1 29±1


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    DO-34 PDF

    MTZJ4.7B

    Abstract: zener DIODE 16B 46
    Text: MTZJ4.7B Diodes Zener diode MTZJ4.7B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3. 6 B 2.7±0.3 29±1 29±1


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    DO-34 MTZJ4.7B zener DIODE 16B 46 PDF

    pf 5b g1

    Abstract: No abstract text available
    Text: MTZJ7.5B Diodes Zener diode MTZJ7.5B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3. 6 B 2.7±0.3 29±1 29±1


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    DO-34 pf 5b g1 PDF

    MTZJ20B

    Abstract: MTZJ ZENER DIODE 47 349P DIODE MTZJ-10B
    Text: MTZJ20B Diodes Zener diode MTZJ20B zApplications Constant voltage control zExternal dimensions Unit : mm TYPE NO. (BLACK) CATHODE BAND (BLACK) φ0.4±0.1 zFeatures 1) Glass sealed envelope. (MSD) 2) High reliability. 3. 6 B 2.7±0.3 29±1 29±1 φ1.8±0.2


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    MTZJ20B DO-34 MTZJ20B MTZJ ZENER DIODE 47 349P DIODE MTZJ-10B PDF