4T sot 23
Abstract: diode marking 4t marking GD sot-23
Text: MMBD301 Schottky Barrier Diode SOT-23 Features Surface mount package ideally suited for automatic insertion. Applications Sourced from process GD. Ordering Information Dimensions in inches and millimeters Type No. Marking MMBD301 Package Code 4T SOT-23
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Original
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MMBD301
OT-23
MMBD301
4T sot 23
diode marking 4t
marking GD sot-23
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PDF
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SOT89 MARKING CODE 43
Abstract: No abstract text available
Text: BAW78./BAW79. Silicon Switching Diodes • Switching applications • High breakdown voltage BAW78D BAW79D ! Type BAW78D BAW79D ! Package SOT89 SOT89 Configuration single common cathode Marking GD GH Maximum Ratings at TA = 25°C, unless otherwise specified
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Original
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BAW78.
/BAW79.
BAW78D
BAW79D
BAW78D
50/60Hz,
BAW78D,
BAW79D,
SOT89 MARKING CODE 43
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PDF
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Untitled
Abstract: No abstract text available
Text: BAW78./BAW79. Silicon Switching Diodes Switching applications High breakdown voltage BAW78D BAW79D 2 1 2 2 3 1 2 Type BAW78D BAW79D 3 Package SOT89 SOT89 Configuration single common cathode Marking GD GH Maximum Ratings at TA = 25°C, unless otherwise specified
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Original
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BAW78.
/BAW79.
BAW78D
BAW79D
BAW78D
BAW78D,
BAW79D,
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PDF
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marking code TS
Abstract: No abstract text available
Text: BAW78./BAW79. Silicon Switching Diodes Switching applications High breakdown voltage BAW78D BAW79D 2 1 2 2 3 1 2 Type BAW78D BAW79D 3 Package SOT89 SOT89 Configuration single common cathode Marking GD GH Maximum Ratings at TA = 25°C, unless otherwise specified
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Original
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BAW78.
/BAW79.
BAW78D
BAW79D
BAW78D
BAW78D,
BAW79D,
marking code TS
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PDF
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BAW78D
Abstract: BAW78 BAW79D tp200 marking GD
Text: BAW78./BAW79. Silicon Switching Diodes Switching applications High breakdown voltage BAW78D BAW79D 2 1 2 2 3 1 2 Type BAW78D BAW79D 3 Package SOT89 SOT89 Configuration single common cathode Marking GD GH Maximum Ratings at TA = 25°C, unless otherwise specified
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Original
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BAW78.
/BAW79.
BAW78D
BAW79D
BAW78D,
BAW79D,
EHB00100
BAW78D
BAW78
BAW79D
tp200
marking GD
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PDF
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A778
Abstract: A778 transistor a784 Q62702-A779 Q62702-A778 A779 Q62702-A109 Q62702-A784
Text: Silicon Switching Diodes BAW 78 A … BAW 78 D Switching applications ● High breakdown voltage ● Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration
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Original
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Q62702-A778
Q62702-A779
Q62702-A784
Q62702-A109
OT-89
A778
A778 transistor
a784
Q62702-A779
Q62702-A778
A779
Q62702-A109
Q62702-A784
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PDF
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z6c8
Abstract: Z11A Z22D z9b1 zener z27b Z20B Z13C type marking code 30C 500mw Z12C z10b
Text: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)
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Original
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GDZJ56
500mW
2002/95/EC
DO-34
MIL-STD-750,
DO-34
2012-REV
RB500V-40
z6c8
Z11A
Z22D
z9b1
zener z27b
Z20B
Z13C
type marking code 30C 500mw
Z12C
z10b
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PDF
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Untitled
Abstract: No abstract text available
Text: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)
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Original
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GDZJ56
500mW
2002/95/EC
DO-34
MIL-STD-750,
DO-34
2012-REV
RB500V-40
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PDF
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zener gdzj marking
Abstract: zener gdzj
Text: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2 to 56 Volt VOLTAGE POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directives
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Original
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GDZJ56
500mW
2011/65/EU
DO-34
MIL-STD-750,
DO-34
2014-REV
zener gdzj marking
zener gdzj
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PDF
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Untitled
Abstract: No abstract text available
Text: 产品规格书 Specification GD SB320S～GD SB360S GOODARK型号 构造 Construction: 用途 接受印栏 ： 金属结合型二极管 请记入贵公司的名称接受日期、责任者人名。 Schottky Barrier Diode : 高速整流用 Application : For High speed Rectifier
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Original
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SB320Sï
SB360S
1800pcs/box
000pcs/box
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PDF
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Untitled
Abstract: No abstract text available
Text: 产品规格书 Specification GD SB370S～GD SB3B0S GOODARK型号 构造 Construction: 用途 接受印栏 ： 金属结合型二极管 请记入贵公司的名称接受日期、责任者人名。 Schottky Barrier Diode : 高速整流用 Application : For High speed Rectifier
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Original
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SB370Sï
1800pcs/box
000pcs/box
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PDF
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GZ 34
Abstract: No abstract text available
Text: Surface Mount Zener Diodes 2W Marking Code Operating Temperature: -40o C to 150 o C Zener Voltage Range @IZT Zener Test Current Max. Zener Impedance @lZT Typical Temp. Coeff. @ IZT Min. Rev. Voltage @I R = 1 µA Maximum Regulator Current @ 45°C Package 7"/13" Reel
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Original
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2ZB10
2ZB11
2ZB12
Z2SMB30
Z2SMB33
Z2SMB36
Z2SMB39
Z2SMB43
Z2SMB47
Z2SMB51
GZ 34
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PDF
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Untitled
Abstract: No abstract text available
Text: IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values unless otherwise specified l RoHs Compliant Containing No Lead and Bromide l Integrated Monolithic Schottky Diode l Low Profile (<0.7 mm) lDual Sided Cooling Compatible
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IRF6898MPbF
IRF6898MTRPbF
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PDF
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Untitled
Abstract: No abstract text available
Text: PS10 Quad Power Sequencing Controller Features General Description ► Sequencing of four supplies, ICs, or subsystems ► Independently programmable delays between open drain PWRGD flags 5.0 to 200ms ► ±10 to ±90V operation ► Tracking in combination with Schottky diodes
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Original
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200ms)
14-Lead
DSFP-PS10
B123008
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: PD - 96371B IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values unless otherwise specified RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode 25V max ±16V max 0.8mΩ@ 10V 1.2mΩ@ 4.5V
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Original
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96371B
Schottky469
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PDF
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Untitled
Abstract: No abstract text available
Text: PS10 Quad Power Sequencing Controller Features General Description ► Sequencing of four supplies, ICs, or subsystems ► Independently programmable delays between open drain PWRGD flags 5.0 to 200ms ► ±10 to ±90V operation ► Tracking in combination with Schottky diodes
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Original
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200ms)
14-Lead
DSFP-PS10
B103008
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PDF
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F0413
Abstract: diode led uv PS10 PS10NG 665K PS10NG-G PS10s
Text: PS10 Quad Power Sequencing Controller Features General Description ► Sequencing of four supplies, ICs, or subsystems ► Independently programmable delays between open drain PWRGD flags 5.0 to 200ms ► ±10 to ±90V operation ► Tracking in combination with Schottky diodes
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Original
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200ms)
14-Lead
DSFP-PS10
B041309
F0413
diode led uv
PS10
PS10NG
665K
PS10NG-G
PS10s
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PDF
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IRL3103
Abstract: 5M MARKING CODE SCHOTTKY DIODE
Text: PD-95435 IRL3103D2PbF FETKYTM MOSFET & SCHOTTKY RECTIFIER l l l l l l Copackaged HEXFET Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application Lead-Free D VDSS = 30V
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Original
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PD-95435
IRL3103D2PbF
O-220
O-220AB.
O-220AB
IRL3103
5M MARKING CODE SCHOTTKY DIODE
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PDF
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IRL3103
Abstract: No abstract text available
Text: PD-95435 IRL3103D2PbF FETKYTM MOSFET & SCHOTTKY RECTIFIER l l l l l l Copackaged HEXFET Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application Lead-Free D VDSS = 30V
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Original
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PD-95435
IRL3103D2PbF
O-220
O-220AB
IRL3103
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PDF
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IRFIB7N50L
Abstract: SiHFIB7N50L SiHFIB7N50L-E3 ktp12
Text: IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.320 Qg (Max.) (nC) 92 Qgs (nC) 24 Qgd (nC) 44 Configuration
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Original
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IRFIB7N50L,
SiHFIB7N50L
O-220
18-Jul-08
IRFIB7N50L
SiHFIB7N50L-E3
ktp12
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PDF
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IRFIB7N50L
Abstract: SiHFIB7N50L SiHFIB7N50L-E3 ktp12
Text: IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.320 Qg (Max.) (nC) 92 Qgs (nC) 24 Qgd (nC) 44 Configuration
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Original
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IRFIB7N50L,
SiHFIB7N50L
O-220
18-Jul-08
IRFIB7N50L
SiHFIB7N50L-E3
ktp12
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications * • High breakdown voltage Type Marking Ordering Code tape and reel BAW 78 A BAW 78 B BAW 78 C BAW 78 D GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration
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OCR Scan
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Q62702-A778
Q62702-A779
Q62702-A784
Q62702-A109
OT-89
EHA07W
rps300
flS35fciGS
235bD5
D1HD43H
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PDF
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MARKING GA
Abstract: Q62702-A779 Q62702-A778
Text: SIEM EN S Silicon Switching Diodes BAW 78 A . BAW 78 D • Switching applications • High breakdown voltage Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering Code tape and reel GA GB GC GD Q62702-A778 Q62702-A779 Q62702-A784 Q62702-A109 Pin Configuration
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OCR Scan
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Q62702-A778
Q62702-A779
Q62702-A784
Q62702-A109
OT-89
WA07007
MARKING GA
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PDF
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MARKING GA
Abstract: A779 baw78c
Text: BAW 78 A BAW 78 D Silicon Switching Diodes Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package GA GB GC GD Q 62702-A675 Q 62 702-A 676 Q 62702-A677 Q 62 702-A 678 Q 62 70 2-A 77 8
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OCR Scan
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62702-A675
62702-A677
62702-A779
62702-A109
MARKING GA
A779
baw78c
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PDF
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