MARKING 68W SOT-23
Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06
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Original
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25-04W
25-05W
25-06W
25-07W
3904S
846AT
846BW
846BT
847AT
847BW
MARKING 68W SOT-23
marking code 67a sot23 6
sot143 Marking code 5B
baw 92
SOT-363 marking CF
54 fk SOT-23
BAT 545
SOT-363 marking BF
sot-89 MARKING CODE BN
MARKING CODE DH SOT 23
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PDF
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c639
Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05
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Original
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
c33840
transistor C639
c33725
c877
C63716
marking code 67a sot23 6
c878
c33740
F423
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PDF
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transistor Bc 540
Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W
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Original
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0-02V
0-03W
3-02V
3-02W
3-03W
3-04W
3-05W
3-06W
4-02V
4-02W
transistor Bc 540
68W SOT
marking codes transistors a1 sot-23
MARKING 68W SOT-23
sot 223 marking code AH
dk marking code sot-89
MARKING CODE DH SOT 23
sot-89 MARKING CODE BN
1Bs sot-23
MY sot-89
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PDF
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transistor C639
Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W
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Original
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3-02W
3-03W
3-04W
3-05W
3-06W
4-02W
4-03W
4-04W
4-05W
4-06W
transistor C639
c639
transistor f423
F423
transistor f422
transistor f422 equivalent
cx59
C640-10
f422
c640 transistor
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PDF
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bond wire gold
Abstract: No abstract text available
Text: Package Details - SOT-223C Mechanical Drawing Lead Code: Part Marking: Full Part Number. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R1 (5-November 2007)
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Original
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OT-223C
EIA-481-1-A
Custom333-86-4
19-September
bond wire gold
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PDF
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Untitled
Abstract: No abstract text available
Text: Package Details - SOD-882L Mechanical Drawing Lead Code: 1 Cathode 2) Anode Part Marking: One Character Alpha/Numeric Code Mounting Pad Geometry Dimensions in mm) Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R0 (19-September 2007)
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Original
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OD-882L
19-September
EIA-481-1-A
28-September
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PDF
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2N5248
Abstract: jfet to 92 jfet marking code JFET APPLICATIONS
Text: 2N5248 w w w. c e n t r a l s e m i . c o m N-CHANNEL SILICON JFET The CENTRAL SEMICONDUCTOR 2N5248 is an N-Channel silicon JFET designed for high frequency amplifier and oscillator applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: TA=25°C
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Original
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2N5248
2N5248
19-September
jfet to 92
jfet marking code
JFET APPLICATIONS
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PDF
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ELF450D
Abstract: ELF450H ELF20N008A elf450j ELF228F elf227f ELF22V020A ELF20N010A ELF20N013A ELF20N016A
Text: Line Filters • Series N, High N ● Type 20N, 21N Recommended PWB piercing plan Dimensions in mm not to scale 29.0±1.0 Marking 11.00±0.05 11.0±0.5 4 20.0±1.0 4.0±1.0 19.5±0.5 1 4–f1.2±0.1 2 19.50±0.05 3 4–f0.8±0.1 32.0±1.0 ● Standard Parts (Series N : 20N)
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Original
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ELF20N006A
ELF20N008A
ELF20N010A
ELF20N013A
ELF20N015A
ELF20N016A
ELF20N018A
ELF20N020A
ELF20N022A
ELF20N024A
ELF450D
ELF450H
ELF20N008A
elf450j
ELF228F
elf227f
ELF22V020A
ELF20N010A
ELF20N013A
ELF20N016A
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PDF
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ELF850
Abstract: ELF450A ELF850B ELF850C ELF860 ELF650H ELF860C ELF650B ELF850W ELF650M
Text: Line Filters n Series N, High N Recommended PWB piercing plan Marking 29.0 1.0 l Type 20N, 21N Dimensions in mm not to scale ± ± 11.00 0.05 ± ± 11.0 0.5 ± 19.50 0.05 ± 20.0 1.0 " 4.0 1.0 ± 19.5 0.5 ± B 4Ð 1.2 0.1 ± 32.0 1.0 ! B ± 4Ð 0.8 0.1
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Original
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ELF20N006A
ELF20N008A
ELF20N010A
ELF20N013A
ELF20N015A
ELF20N016A
ELF20N018A
ELF20N020A
ELF20N022A
ELF20N024A
ELF850
ELF450A
ELF850B
ELF850C
ELF860
ELF650H
ELF860C
ELF650B
ELF850W
ELF650M
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PDF
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ELF850
Abstract: ELF860C ELF656V ELF650B ELF850C ELF850B elf666a ELF656Y ELF18D860B ELF650C
Text: Line Filters n Series N, High N Recommended PWB piercing plan Marking 29.0 1.0 l Type 20N, 21N Dimensions in mm not to scale ± ± 11.00 0.05 ± ± 11.0 0.5 ± 19.50 0.05 ± 20.0 1.0 " 4.0 1.0 ± 19.5 0.5 ± B 4Ð 1.2 0.1 ± 32.0 1.0 ! B ± 4Ð 0.8 0.1
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Original
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ELF20N006A
ELF20N008A
ELF20N010A
ELF20N013A
ELF20N015A
ELF20N016A
ELF20N018A
ELF20N020A
ELF20N022A
ELF20N024A
ELF850
ELF860C
ELF656V
ELF650B
ELF850C
ELF850B
elf666a
ELF656Y
ELF18D860B
ELF650C
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PDF
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MARKING 19S
Abstract: bfq 85 fgs npn Q62702-F1088 Marking Code FGs
Text: BFQ 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: CECC 50 002/259 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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Q62702-F1088
OT-89
Dec-16-1996
MARKING 19S
bfq 85
fgs npn
Q62702-F1088
Marking Code FGs
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PDF
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BFQ19S
Abstract: MARKING 19S bfq 85
Text: BFQ 19S NPN Silicon RF Transistor 1 For low noise, low distortion broadband 2 amplifiers in antenna and 3 telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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VPS05162
OT-89
Oct-12-1999
BFQ19S
MARKING 19S
bfq 85
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PDF
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c639
Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04
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OCR Scan
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
C63716
C337 40
sot-23 MARKING 636
MARKING 68W SOT-23
C-639
F959
sot143 Marking code 5B
B304A
sot-89 MARKING CODE BN
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PDF
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ELF450H
Abstract: ELF450D ELF22V025A ELF21V014S ELF22V070B ELF18D450D ELF20N013A ELF21V017S ELF22V040B ELF217
Text: Line Filters Panasonic • Series N, High N • Type 20N, 21N Dimensions in mm not to scale Recommended PW B piercing plan Marking • Standard Parts (Series N : 20N) Part No. Marking ELF20N006A ELF20N008A ELF20N010A ELF20N013A ELF20N015A ELF20N016A ELF20N018A
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OCR Scan
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ELF20N006A
ELF21N006A
ELF20N008A
ELF21N008A
ELF20N010A
ELF21N010A
ELF20N013A
ELF21N013A
ELF20N015A
ELF21N015A
ELF450H
ELF450D
ELF22V025A
ELF21V014S
ELF22V070B
ELF18D450D
ELF21V017S
ELF22V040B
ELF217
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PDF
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transistor marking 19P
Abstract: transistor wae
Text: BFQ 19P NPN Silicon RF Transistor • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S Type Marking Ordering code tape and reel Package BFQ 19P FE Q 62702- F 1 060
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OCR Scan
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OT-89
transistor marking 19P
transistor wae
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PDF
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npn transistor sot-89 MARKING AG
Abstract: No abstract text available
Text: NPN Silicon RF Transistor BFQ 19S • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 to 70 mA. 6 CECC-type available: C E C C 50002/259. Type Marking Ordering code tape and reel
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OCR Scan
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OT-89
npn transistor sot-89 MARKING AG
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PDF
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Untitled
Abstract: No abstract text available
Text: S C 1 7 i .OA : Outline Drawings k _ GENERAL USE RECTIFIER DIODE : Features ESD-Proof • * B S 8* A f » m Surface m ount device •K « « t4 i/jv : Marking High reliability • Applications • V iSftd fE O H General purpose rectifier applications
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OCR Scan
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19S24
I95t/R89)
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PDF
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Untitled
Abstract: No abstract text available
Text: MICRON B M T4C16256/7/8/9 L 256K X 16 WIDE DRAM BCMICDNDUCTaH. WC WIDE DRAM 256K x 16 DRAM LOW POWÉR, EXTENDED REFRESH FEATURES MARKING • T im ing 60ns access 70ns access 80ns access • W rite Cycle Access BYTE o r W ORD via WE nonm askable BYTE or W ORD via CAS
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OCR Scan
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T4C16256/7/8/9
T4C16257/9
T4C16258/9
512-cycle
500mW
40-Pin
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PDF
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ez920
Abstract: LH5160N LH5160 LH5160HN-10L RC-1009B
Text: n SHARP 2 8 19SLJ TO: •K ìlì - ì R E N C E D E V I C E S P E C I F I C A T I O N FOR 64K bit S T A T I C R A M 8,192 X 8bit M O D E L NO. L H 5 1 6 0 H N - 1 ( LH5160N8 OL ) SP E C N O . : E L 0 2 Y 0 1 1 ISSUE: CUSTOMERS D e c . 13.1990 APPROVAL DATE:
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OCR Scan
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LH5160N8
EL02Y011
4-P-225
OP16-P-225
OP24-P-450
S0P28-P-45Q
ez920
LH5160N
LH5160
LH5160HN-10L
RC-1009B
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PDF
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Untitled
Abstract: No abstract text available
Text: R E U . /ED JUN 2 6 19S3 DOPUNT REVISIONS DESCRIPTION LETTER NO NOTES: A REVISED PER ECO 1. DISSIPATION FACTOR: .005 MAX @ 2 5 ' C, 1 kHZ. ER <£18 2. CAPACITANCE: 180 n F -2 2 0 nF. 3. DIELECTRIC WITHSTANDING VOLTAGE: 2.5 kV RATED, 3.5 kV PROCESS FOR 2 HOURS @ 100* C AND
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OCR Scan
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204A252B000
7W970
200NF
2500WVDC
M204A252B000
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PDF
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1N589
Abstract: IN5809 1v500 1M5811 JANTX 1N5811 DIODE 1N5804 1N5896 j 5804 ns802 1N5809 equivalent
Text: MIL SPECS 44E » The documentation and proc*»» conversion m w r M necessary to comply with this revision shall be completed by 25 Apr 93. • □□□□155 0032612 7 ■ M I L S 1- 1 IINCH-POUNDj I . — I | j j ML-S-19S00/477B 25 January 1993
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OCR Scan
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GD0D12S
003S612
ml-S-19S00/477b
n1l-s-19s00/477a
1n58q2,
1ns804,
1ns806,
1ns807,
1h5809,
1ns811,
1N589
IN5809
1v500
1M5811
JANTX 1N5811
DIODE 1N5804
1N5896
j 5804
ns802
1N5809 equivalent
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PDF
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MARKING 19S
Abstract: sot marking code ZS
Text: SIEMENS BFQ 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: C E C C 50 002/259 ESP: Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
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Q62702-F1088
OT-89
MARKING 19S
sot marking code ZS
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PDF
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LH5160
Abstract: No abstract text available
Text: n SHARP 2 8 19SLJ TO: •K ìlì - ì R E N C E D E V I C E S P E C I F I C A T I O N FOR 64K bit S T A T I C R A M 8,192 X 8bit M O D E L NO. L H 5 1 6 0 H N - 1 ( LH5160N8 OL ) SP E C N O . : E L 0 2 Y 0 1 1 ISSUE: CUSTOMERS D e c . 13.1990 APPROVAL DATE:
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OCR Scan
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LH5160N8
EL02Y011
4-P-225
OP16-P-225
OP24-P-450
S0P28-P-45Q
LH5160
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PDF
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transistor 1p3
Abstract: BFQ19P MARKING 19S ic MARKING FZ 62702-F1060 F1060 e23s
Text: 47E D ê23SbGS DDSMMST 7 « S I E 6 7 ^ 3 3 BFQ 19P NPN Silicon RF Transistor - SIEMENS AKTI ENGESELLSCHAF • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S
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OCR Scan
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23SbGS
BFQ19P
62702-F1060
OT-89
D2Hm35
transistor 1p3
MARKING 19S
ic MARKING FZ
F1060
e23s
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PDF
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