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    MARKING 1AV Search Results

    MARKING 1AV Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING 1AV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


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    PDF GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


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    PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    178M05

    Abstract: RN4B RN3A marking 2GW RD3a RD2A marking 4GW marking "4gw" RD1A MARKING CODE RD3.A
    Text: 固定抵抗器 FIXED RESISTORS OPERATING TEMP. K55VJ155C 特長 FEATURES 1AV4B: Y電流雑音が小さく耐パルス性が高い Yマルチマウントに特に適している 1AV4B: YCurrent noise level is low, yet highly resistant to pulses. YEspecially suitable for high speed automated mounting.


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    PDF K55VJ155C 512M0 354M0 394M0 083M0 150M0 071M0 012M0 178M05 RN4B RN3A marking 2GW RD3a RD2A marking 4GW marking "4gw" RD1A MARKING CODE RD3.A

    KT3 marking code

    Abstract: marking 004 sot-323
    Text: BAS19W FM120-M+ BAS20WTHRU BAS21W FM1200-M+ WILLAS SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features • Batch process SWITCHING DIODEdesign, excellent power dissipation offers


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    PDF OT-323 OD-123+ BAS19W FM120-M+ BAS20W BAS21W FM1200-M+ OD-123H FM120-MH KT3 marking code marking 004 sot-323

    marking 1af

    Abstract: marking code 1bx marking code 1bw marking code 1BL Diode marking CODE 1BS 1BW MARKING 1ag marking code marking code 1AW marking code 1av MARKING 1BW
    Text: SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40V Peak Pulse Power 1000W unidirectional 800W (bidirectional)


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    PDF SMB10J5 DO-214AA 50mVp-p 11-Mar-04 marking 1af marking code 1bx marking code 1bw marking code 1BL Diode marking CODE 1BS 1BW MARKING 1ag marking code marking code 1AW marking code 1av MARKING 1BW

    marking CODE 1BS

    Abstract: 1AF MARKING TR marking code 1AW marking CODE 1BW marking code 1AM SMB8J5 SMB10J5 MARKING 1BW 1BW MARKING marking CODE 1BH
    Text: SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40V Peak Pulse Power 1000W unidirectional 800W (bidirectional)


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    PDF SMB10J5 DO-214AA DO-214AA 08-Apr-05 marking CODE 1BS 1AF MARKING TR marking code 1AW marking CODE 1BW marking code 1AM SMB8J5 MARKING 1BW 1BW MARKING marking CODE 1BH

    marking code 1BL Diode

    Abstract: 1bw 83 marking code 1AW J-STD-002B SMB10 JESD22-B102D marking code 1ay
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional


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    PDF SMB10 J-STD-020C, 2002/95/EC 2002/96/EC DO-214AA 08-Apr-05 marking code 1BL Diode 1bw 83 marking code 1AW J-STD-002B JESD22-B102D marking code 1ay

    Untitled

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction


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    PDF SMB10 DO-214AA J-STD-020, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    smb8j28

    Abstract: mosfet 1ak SMB8J10C SMB10J16A SMB8J24CA SMB10J15 SMB108 SMB 1BL SMB8J26CA marking CODE 1BH
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


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    PDF SMB10 J-STD-020C, 2002/95/EC 2002/96/EC 18-Jul-08 smb8j28 mosfet 1ak SMB8J10C SMB10J16A SMB8J24CA SMB10J15 SMB108 SMB 1BL SMB8J26CA marking CODE 1BH

    marking code 1BL Diode

    Abstract: marking code 1bx mosfet 1ak 1ag marking code marking 1be marking code 1AW marking code 1Bt Diode JESD22-B102 J-STD-002 SMB10
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


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    PDF SMB10 J-STD-020, 2002/95/EC 2002/96/EC DO-214AA 18-Jul-08 marking code 1BL Diode marking code 1bx mosfet 1ak 1ag marking code marking 1be marking code 1AW marking code 1Bt Diode JESD22-B102 J-STD-002

    Untitled

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction


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    PDF SMB10 DO-214AA J-STD-020, 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction


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    PDF SMB10 J-STD-020, AEC-Q101 DO-214AA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    marking code 1BL Diode

    Abstract: mosfet 1ak 1AP marking marking code 1av marking code 1bx 1ay transistor 1Bt 87 smb8j28 1AM-7 diode marking 1BL
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional


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    PDF SMB10 J-STD-020C, 2002/95/EC 2002/96/EC DO-214AA 08-Apr-05 marking code 1BL Diode mosfet 1ak 1AP marking marking code 1av marking code 1bx 1ay transistor 1Bt 87 smb8j28 1AM-7 diode marking 1BL

    Untitled

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction


    Original
    PDF SMB10 J-STD-020, AEC-Q101 DO-214AA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Supressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction


    Original
    PDF SMB10 J-STD-020, DO-214AA 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SMB10 8 J5.0(C)A thru SMB10(8)J40(C)A www.vishay.com Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction


    Original
    PDF SMB10 J-STD-020, AEC-Q101 DO-214AA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    marking code 1AW

    Abstract: marking code 1ay
    Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional


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    PDF SMB10 J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 marking code 1AW marking code 1ay

    wsc-1

    Abstract: Dale WSC-1 Dale Resistor wsc1
    Text: MODEL WSC ^ ojuæ T Wirewound Resistors Precision Power, Surface Mount FEATURES • Molded epoxy encapsulation 1Available in non-inductive styles with Aryton-Perry windings for lowest reactive components ELECTRICAL SPECIFICATIONS STANDARD ELECTRICAL SPECIFICATIONS


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    PDF WSC-112-5 EIA-481 12mm/2000 pieces/13 16mm/2000 pieces/13" 24mm/1200 wsc-1 Dale WSC-1 Dale Resistor wsc1

    Untitled

    Abstract: No abstract text available
    Text: MODEL WSC Wirewound Resistors Precision Power, Surface Mount FEATURES • Molded epoxy encapsulation 1Available in non-inductive styles with Aryton-Perry windings for lowest reactive components ELECTRICAL SPECIFICATIONS STANDARD ELECTRICAL SPECIFICATIONS Resistance Tolerance: ± .5%, ± 1%, ± 3%, ± 5%.


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    PDF 90PPM/Â 50PPM/Â 20PPM/Â

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA SSM6K07FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM6K07FU DC-DC CONVERTERS HIGH SPEED SWITCHING APPLICATIONS Unit in mm 2.1 ±0.1 • Small Package • R^UIl = isn = 1AVÌ — .O, m f lv : Ron = 220 mO max. @Vg S = 4 v Low Input Capacitance


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    PDF SSM6K07FU

    Untitled

    Abstract: No abstract text available
    Text: A COMPANY OF J J A L E f MODELS FL and LO M etal Film Resistors Low Resistance FE A T U R E S • Low value: 1 ohm to 48.7 ohm 1Temperature Coefficient as low as ± 50PPM/°C 1Available in both flameproof (FL) and nonflameproof (LO) construction S T A N D A R D E L E C T R IC A L S P E C IF IC A T IO N S


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    PDF 50PPM/

    Sylvania OSRAM

    Abstract: sylvania osram sylvania optotronic* ot 20 osram 20W HCW2-865 7D065
    Text: Gilwav Product Information Bulletin .Distributed by LINEARIight FLEX TOPLED Technical L am p/ Flexible LED Strip www, g ¡liway.com 781.935-4442 Fax: 781,938.5867 1Long life: Up to 100,000 hours depending on color. New HOW2 white modules service life is up to 50,000 hours.


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    PDF 617nm Sylvania OSRAM sylvania osram sylvania optotronic* ot 20 osram 20W HCW2-865 7D065

    smd diode a7

    Abstract: schottky diode marking A7 diode marking H2 5011s smd marking 5G smd marking a7 DF30PC3M marking A7 diode SHINDENGEN DIODE A7 diode smd
    Text: Schottky Barrier Diode Twin Diode mm DF30PC3M OUTLINE 30V 30A Feature • SMD • SMD • Ultra-Low Vf=0.4V • High lo Rating-Small-RKG • î 3 V f=0.4V M ain Use • K'.yxU-jS?8Bfi± • Reverse connect protection for DC power source • DC OR-output


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    PDF DF30PC3M STO-220 smd diode a7 schottky diode marking A7 diode marking H2 5011s smd marking 5G smd marking a7 DF30PC3M marking A7 diode SHINDENGEN DIODE A7 diode smd

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


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    PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr