MARKING 1P
Abstract: MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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OT-23
MMBT2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
MARKING 1P
MMBT2222A
MMBT2907A
1p sot23
TRANSISTOR 1P SOT23
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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OT-23
MMBT2222A
OT-23
MMBT2907A)
150mA
500mA
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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OT-23
MMBT2222ALT1
OT-23
MMBT2907ALT1)
-55to
150mA
500mA
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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PDF
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OT-23
MMBT2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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PDF
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OT-23
MMBT2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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Original
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PDF
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OT-23
MMBT2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P
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OT-23
MMBT2222A
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
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Transistor hFE CLASSIFICATION Marking CE
Abstract: marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P
Text: MMBT2222A TRANSISTOR NPN PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P MECHANCIAL DATA NA Pb-free; RoHS-compliant
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MMBT2222A
OT-23
OT-23
MMBT2907A)
-55to
Transistor hFE CLASSIFICATION Marking CE
marking 1P sot-23
Application of MMBT2907A
sot-23 1P F
MMBT2222A
MMBT2907A
MARKING 1P
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marking 1p sot23
Abstract: TRANSISTOR 1P SOT23 1p transistor sot23 1p transistor sot-23 1P F marking 1p transistor sot23 TRANSISTOR 1P Marking 1P 1P sot23 sot23 1p
Text: MMBT2222A SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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MMBT2222A
OT-23
OT-23
MMBT2907A)
-55to
150mA
500mA
100MHz
150mA
marking 1p sot23
TRANSISTOR 1P SOT23
1p transistor sot23
1p transistor
sot-23 1P F
marking 1p transistor sot23
TRANSISTOR 1P
Marking 1P
1P sot23
sot23 1p
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Untitled
Abstract: No abstract text available
Text: FMBT2222A NPN Bipolar Transistor Mechanical Dimensions FMBT2222A Description 1. BASE 2.EMITTER 3.COLLECTOR SOT-23 Dimension in mm FEATURES y Epitaxial planar die construction y Complementary PNP Type available FMMBT2907A MARKING: 1P MAXIMUM RATINGS* TA=25℃ unless otherwise noted
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FMBT2222A
FMBT2222A
OT-23
FMMBT2907A)
-55to
V50mA
500mA
100MHz
150mA
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kst2222a
Abstract: No abstract text available
Text: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage
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KST2222A
OT-23
KST2222A
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UTC 225
Abstract: No abstract text available
Text: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE
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MMBT2222A
500mA.
OT-23
QW-R206-019
UTC 225
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KST2222A
Abstract: transistor kst2222a
Text: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage
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KST2222A
OT-23
KST2222A
transistor kst2222a
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1P NPN
Abstract: MMBT2222A 1P SOT-23 MMBT2222A UTC
Text: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE
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MMBT2222A
500mA.
OT-23
QW-R206-019
1P NPN
MMBT2222A
1P SOT-23
MMBT2222A UTC
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LMBT2222AWT1G
Abstract: marking 1p npn transistor 1P F
Text: LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon LMBT2222AWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which 3 COLLECTOR is designed for low power surface mount
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LMBT2222AWT1G
323/SC
LMBT2222AWT1G
marking 1p npn
transistor 1P F
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M1B marking
Abstract: 1N914 SOT-23 MMBT2222A 1n914 sot marking 1p sot23 1P SOT-23 marking code m1b MMBT2222ALT1G 1p sot MMBT2222LT3G
Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Unit VCEO MMBT2222LT1 MMBT2222ALT1 Collectorā-āBase Voltage
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MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1
MMBT2222LT1
M1B marking
1N914 SOT-23
MMBT2222A
1n914 sot
marking 1p sot23
1P SOT-23
marking code m1b
MMBT2222ALT1G
1p sot
MMBT2222LT3G
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TRANSISTOR 1P
Abstract: TRANSISTOR code marking 1P 3 marking code 1P SC-89 1P surface mount transistor
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications.
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LMBT2222ATT1G
SC-89
SC-89
LMBT2222ATT3G
463C-01
463C-02.
TRANSISTOR 1P
TRANSISTOR code marking 1P 3
marking code 1P
1P surface mount transistor
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Untitled
Abstract: No abstract text available
Text: MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate
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MMBT2222A
300mW,
OT-23
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: MMBT2222A 300mW, NPN Small Signal Transistor SOT-23 Small Signal Product Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin Sn lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant
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MMBT2222A
300mW,
OT-23
MIL-STD-202,
C/10s
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TRANSISTOR code marking 1P 3
Abstract: marking code 1p TRANSISTOR MARKING CODE 1P MMBT2222A transistor 1P Transistor MARKING 1P marking transistor 1p 1 1p transistor 1p transistor sot23 marking 1p transistor sot23
Text: MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate
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MMBT2222A
300mW,
OT-23
MIL-STD-202,
TRANSISTOR code marking 1P 3
marking code 1p
TRANSISTOR MARKING CODE 1P
MMBT2222A
transistor 1P
Transistor MARKING 1P
marking transistor 1p 1
1p transistor
1p transistor sot23
marking 1p transistor sot23
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Marking Code 2F
Abstract: 250-600
Text: ilAIEC Dffi SURFACE MOUNT TRANSISTORS NPN TRANSISTORS - TO-236 PACKAGE Type Number MMBT2222A IMBT3904 MMBT4401 MMBTA05 MMBTA06 MMBT5551 MMBTA42 CEO Marking Code 1P 1N 2X 1H 1G 3S 1D 40 40 40 60 80 160 300 1 ' c b o VCB h FE ® 100-300 100-300 100-300
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OCR Scan
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PDF
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MMBT2222A
IMBT3904
MMBT4401
MMBTA05
MMBTA06
MMBT5551
MMBTA42
O-236
40min.
Marking Code 2F
250-600
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TMPTA06
Abstract: TMPT2222A marking 1p TMPTA42 marking 1R NPN TMPT6427 tmpt3904 BEC npn V7560
Text: NPN TRANSISTORS SO T-23/TO -236A B ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain *CB0 V|BR CBO V|BR)CEO Device Type Marking V) TMPT2222A 1P 75 40 TMPT3904 1A 60 40 TMPT4401 2X 60 TMPT5089 1R TMPT6427 TMPTA06 TMPTA42 1D V (BR)EBO Max. V cb hFE
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OCR Scan
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PDF
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T-23/TO
-236A
TMPT2222A
TMPT3904
TMPT4401
TMPT5089
TMPT6427
TMPTA06
TMPTA42
marking 1p
marking 1R NPN
BEC npn
V7560
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SMBT4403
Abstract: SMBT5401 SMBT4401 marking 2G SOT23
Text: SURFACE MOUNT TRANSISTORS NPN TRANSISTORS - SOT-23 PACKAGE CASE 37 SURGE PART NUMBER V CEO V l o p e r a t in g ^C F S A T y /s & Vv ce ! G to r ag e tem per atu r e ’ c es w Marking Code Volts SMBT2222A 1P 40 1 0 0 -3 0 0 10/1 50 1.0 SMBT3904 SMBT4401
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OCR Scan
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PDF
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OT-23
SMBT2222A
SMBT3904
SMBT4401
SMBTA05
SMBTA06
SMBT5551
SMBTA42
OT-23
SMBT4403
SMBT5401
marking 2G SOT23
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2N7002W
Abstract: transistor marking 1p
Text: 2N7002W VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /UTEMir powefsehconwjctor/ I Features Low On-Res¡stance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage Ultra-Small Surface Mount Package
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OCR Scan
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PDF
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2N7002W
OT-323
OT-323,
MIL-STD-202,
300ns,
DS30099
2N7002W
transistor marking 1p
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