MARKING 20N60A4 Search Results

MARKING 20N60A4 Result Highlights (5)

Part	Manufacturer	Description
MG8097/B	Rochester Electronics LLC	8097 - Math Coprocessor - Dual marked (8506301ZA)
5490/BCA	Rochester Electronics LLC	5490 - Decade Counter - Dual marked (M38510/01307BCA)
5405/BCA	Rochester Electronics LLC	5405 - Gate - Dual marked (M38510/00108BCA)
54AC20/SDA-R	Rochester Electronics LLC	54AC20/SDA-R - Dual marked (M38510R75003SDA)
UHD503R/883	Rochester Electronics LLC	UHD503R/883 - Dual marked (5962-8855101CA)

MARKING 20N60A4 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
20N60A4 Abstract: 20N60A4 equivalent HGTGN60A4D hg20n60 Commit TA49372 marking 20n60a4 IGBT 20n60a4 igbt fairchild 20n60a4 HGTP20N60A4 Text: HGTG20N60A4, HGTP20N60A4 Data Sheet April 2013 600 V SMPS IGBT Features The HGTG20N60A4 and HGTP20N60A4 are combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications	Original	PDF	HGTG20N60A4, HGTP20N60A4 HGTG20N60A4 HGTP20N60A4 TA49339. O-220AB 20N60A4 20N60A4 equivalent HGTGN60A4D hg20n60 Commit TA49372 marking 20n60a4 IGBT 20n60a4 igbt fairchild 20n60a4
20N60A4 equivalent Abstract: No abstract text available Text: HGTG20N60A4 Data Sheet November 2013 File Number 600 V SMPS IGBT Features The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high	Original	PDF	HGTG20N60A4 HGTG20N60A4 TA49339. O-247 20N60A4 equivalent

Catalog Datasheet

MFG & Type

PDF

Document Tags

20N60A4

Abstract: 20N60A4 equivalent HGTG*N60A4D hg*20n60 Commit TA49372 marking 20n60a4 IGBT 20n60a4 igbt fairchild 20n60a4 HGTP20N60A4
Text: HGTG20N60A4, HGTP20N60A4 Data Sheet April 2013 600 V SMPS IGBT Features The HGTG20N60A4 and HGTP20N60A4 are combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications

Original

PDF

HGTG20N60A4, HGTP20N60A4 HGTG20N60A4 HGTP20N60A4 TA49339. O-220AB 20N60A4 20N60A4 equivalent HGTG*N60A4D hg*20n60 Commit TA49372 marking 20n60a4 IGBT 20n60a4 igbt fairchild 20n60a4

20N60A4 equivalent

Abstract: No abstract text available
Text: HGTG20N60A4 Data Sheet November 2013 File Number 600 V SMPS IGBT Features The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high