IRLR2908
Abstract: IRLU2908
Text: PD - 94501 IRLR2908 IRLU2908 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l l l l l l D VDSS = 80V
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IRLR2908
IRLU2908
AN-994.
IRLR2908
IRLU2908
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Untitled
Abstract: No abstract text available
Text: PD - 94501 IRLR2908 IRLU2908 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l l l l l l D VDSS = 80V
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IRLR2908
IRLU2908
AN-994.
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IRLR2908
Abstract: IRLU2908 MOSFET IRF 380
Text: PD - 94501 IRLR2908 IRLU2908 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l l l l l l D VDSS = 80V
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IRLR2908
IRLU2908
AN-994.
IRLR2908
IRLU2908
MOSFET IRF 380
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IRFP23N50L
Abstract: 94230B 035H IRFPE30
Text: PD - 94230B IRFP23N50L SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control applications VDSS RDS on typ. Trr typ. ID 0.190Ω 500V 170ns
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94230B
IRFP23N50L
170ns
O-247AC
IRFPE30
O-247AC
IRFP23N50L
94230B
035H
IRFPE30
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IRF3707
Abstract: No abstract text available
Text: PD - 93938 PROVISIONAL IRF3708 IRF3708S IRF3708L SMPS MOSFET HEXFET Power MOSFET Applications High Frequency DC-DC Converters with Synchronous Rectification l VDSS RDS on max ID 30V 0.012Ω 58A Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS
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IRF3708
IRF3708S
IRF3708L
O-220AB
IRF3707
IRF3707S
O-262
IRF3707L
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PD-95660
Abstract: No abstract text available
Text: PD-95660 IRL3302PbF l l l l l l Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150°C Operating Temperature Fast Switching Lead-Free HEXFET Power MOSFET D VDSS = 20V RDS on = 0.020Ω G Description These HEXFET Power MOSFETs were designed
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PD-95660
IRL3302PbF
O-220
O-220AB.
O-220AB
PD-95660
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Untitled
Abstract: No abstract text available
Text: PD - 97049 IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L
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IRF5210SPbF
IRF5210LPbF
IRF5210S/L
-100V
O-262
EIA-418.
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Untitled
Abstract: No abstract text available
Text: PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L
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97049B
IRF5210SPbF
IRF5210LPbF
IRF5210S/L
-100V
O-262
EIA-418.
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IRLR2908
Abstract: IRLU2908 IRLR2908PbF
Text: PD - 95552A IRLR2908PbF IRLU2908PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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5552A
IRLR2908PbF
IRLU2908PbF
AN-994.
IRLR2908
IRLU2908
IRLR2908PbF
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IRLR2908
Abstract: IRLU2908 IRLR2908PbF
Text: PD - 95552A IRLR2908PbF IRLU2908PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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Original
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5552A
IRLR2908PbF
IRLU2908PbF
AN-994.
IRLR2908
IRLU2908
IRLR2908PbF
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Untitled
Abstract: No abstract text available
Text: PD - 93935 PROVISIONAL IRFR3708 IRFU3708 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification VDSS RDS on max ID 30V 0.0125Ω 57A
Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS
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IRFR3708
IRFU3708
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irf5210s
Abstract: No abstract text available
Text: PD - 97049B IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L
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97049B
IRF5210SPbF
IRF5210LPbF
IRF5210S/L
-100V
O-262
EIA-418.
irf5210s
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irf5210s
Abstract: No abstract text available
Text: PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L
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Original
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7049A
IRF5210SPbF
IRF5210LPbF
IRF5210S/L
-100V
O-262
EIA-418.
irf5210s
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 93934 PROVISIONAL IRFR3707 IRFU3707 SMPS MOSFET HEXFET Power MOSFET Applications l High Frequency DC-DC Converters with Synchronous Rectification VDSS RDS on max ID 30V 0.0125Ω 57A
Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS
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IRFR3707
IRFU3707
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AN-994
Abstract: EIA-541 IRFR120 IRFU120 IRLR2908 IRLU2908 marking 23A Mosfet IRLR2908PbF
Text: PD - 95552A IRLR2908PbF IRLU2908PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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5552A
IRLR2908PbF
IRLU2908PbF
AN-994.
AN-994
EIA-541
IRFR120
IRFU120
IRLR2908
IRLU2908
marking 23A Mosfet
IRLR2908PbF
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U120
Abstract: IRLR2908PbF
Text: PD - 95552B IRLR2908PbF IRLU2908PbF HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 80V
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95552B
IRLR2908PbF
IRLU2908PbF
AN-994.
U120
IRLR2908PbF
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IRLR2908PbF
Abstract: No abstract text available
Text: PD - 95552B IRLR2908PbF IRLU2908PbF HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 80V
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Original
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95552B
IRLR2908PbF
IRLU2908PbF
AN-994.
IRLR2908PbF
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 97049A IRF5210SPbF IRF5210LPbF HEXFET Power MOSFET l l l l l l l l Advanced Process Technology Ultra Low On-Resistance 150°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters are Different from IRF5210S/L
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Original
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7049A
IRF5210SPbF
IRF5210LPbF
IRF5210S/L
-100V
O-262
EIA-418.
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PDF
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IRLR2908PbF
Abstract: No abstract text available
Text: PD - 95552 IRLR2908PbF IRLU2908PbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
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Original
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IRLR2908PbF
IRLU2908PbF
AN-994.
IRLR2908PbF
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60v 39a to220
Abstract: No abstract text available
Text: PD-95660 IRL3302PbF l l l l l l Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150°C Operating Temperature Fast Switching Lead-Free HEXFET Power MOSFET D VDSS = 20V RDS on = 0.020Ω G Description These HEXFET Power MOSFETs were designed
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Original
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PD-95660
IRL3302PbF
O-220
O-220AB
60v 39a to220
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IRL3302
Abstract: No abstract text available
Text: PD 9.1696A IRL3302 PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150°C Operating Temperature Fast Switching D VDSS = 20V RDS on = 0.020W G Description These HEXFET Power MOSFETs were designed
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IRL3302
O-220
IRL3302
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Untitled
Abstract: No abstract text available
Text: PD - 97761 IRF6893MPbF IRF6893MTRPbF DirectFET plus MOSFET with Schottky Diode RoHs Compliant Containing No Lead and Bromide Typical values unless otherwise specified Integrated Monolithic Schottky Diode V DSS VGS R DS(on) R DS(on) l Low Profile (<0.7 mm)
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IRF6893MPbF
IRF6893MTRPbF
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Untitled
Abstract: No abstract text available
Text: International • massmss oois^o35^* inr pd-9.54ob IR F P 254 Rectifier HEXFET Power MOSFET • • • • • • INTERNATIONAL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling
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OCR Scan
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O-247
O-220
IRFP254
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Untitled
Abstract: No abstract text available
Text: SSDF9504 23A, 40V, RDS ON 26m -20A, -40V, RDS(ON) 40m N And P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION TO-252-4L The SSDF9504 provide the designer with best combination
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SSDF9504
O-252-4L
SSDF9504
14-Nov-2012
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