z02w24v -y
Abstract: Z02W24V
Text: SEMICONDUCTOR Z02W24V MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 24X No. 1 Item Marking Device Mark 24 Z02W24V Voltage Grade X X,Y,Z * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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Z02W24V
OT-23
z02w24v -y
Z02W24V
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AP1531
Abstract: AH276K-PL-B AP13933WA AP131-18YA AH175WL-7 T77Z102.13 AP1117C AP1117CE33G-13 AP2191ASG-13 transistor+smd+zG+13
Text: INFORMATIONAL PRODUCT CHANGE NOTICE Initial Final DCS/ICN-1140 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: July 24, 2009 Immediate Analog Semiconductors Marking Change ICN #: 1140 TITLE Date Code Marking Update IMPACT Change in device marking format. Improved product traceability.
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DCS/ICN-1140
40W6G-7
APX825A-44W6G-7
APX825A-46W6G-7
ATS137-PL-A
ATS137-PL-A-A
ATS137-PLA-B
ATS137-PL-A-B
ATS137-PL-B
ATS137-PL-B-A
AP1531
AH276K-PL-B
AP13933WA
AP131-18YA
AH175WL-7
T77Z102.13
AP1117C
AP1117CE33G-13
AP2191ASG-13
transistor+smd+zG+13
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Untitled
Abstract: No abstract text available
Text: MMBD1201 / 1202 / 1203 / 1204 / 1205 Small Signal Diodes Connection Diagram 1201 3 1202 3 3 3 24 1 2 1 1203 3 SOT-23 1 Symbol 2 3 1204 1 2 2 1205 3 1 Absolute Maximum Ratings* 1NC 2 MARKING MMBD1201 24 MMBD1202 25 MMBD1203 26 MMBD1204 27 MMBD1205 28 1 2NC
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MMBD1201
OT-23
MMBD1202
MMBD1203
MMBD1204
MMBD1205
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Diode Marking 1p SOT-23
Abstract: transistor 1201 1203 1205 MMBD1201 MMBD1203 MMBD1204A MMBD1205A diode e 1205
Text: MMBD1201 / 1203 / 1204 / 1205 CONNECTION DIAGRAMS 3 3 3 1201 3 1203 24 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 1 1 2 3 3 1204 1 1205 2 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings*
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MMBD1201
OT-23
MMBD1204A
MMBD1203
MMBD1205A
Diode Marking 1p SOT-23
transistor 1201 1203 1205
diode e 1205
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MMBD1201
Abstract: MMBD1202 MMBD1203 MMBD1204 MMBD1205
Text: MMBD1201 / 1202 / 1203 / 1204 / 1205 Small Signal Diodes Connection Diagram 1201 3 3 1202 3 3 24 1 2 1 1203 3 SOT-23 1 Symbol 2 3 1204 1 2 2 1205 3 1 Absolute Maximum Ratings* 1NC 2 MARKING MMBD1201 24 MMBD1202 25 MMBD1203 26 MMBD1204 27 MMBD1205 28 1 2NC
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MMBD1201
OT-23
MMBD1202
MMBD1203
MMBD1204
MMBD1205
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transistor 1201 1203 1205
Abstract: MMBD1201 MMBD1203 MMBD1204 MMBD1205 mmbd1200
Text: Connection Diagrams 1201 3 3 24 1 1204 3 2 1 2 3 3 1203 2NC 1 2 3 1205 1 2 1 MARKING MMBD1201 24 MMBD1203 26 MMBD1204 27 MMBD1205 28 SOT-23 1 2 Small Signal Diodes Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM
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MMBD1201
MMBD1203
MMBD1204
MMBD1205
OT-23
transistor 1201 1203 1205
mmbd1200
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marking P2 sot-23
Abstract: marking wa sot-23
Text: CONNECTION DIAGRAMS 3 3 3 1201 3 1203 24 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204 27 MMBD1203 26 MMBD1205 28 1 1 2 3 3 1204 1 1205 2 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMBD1201
OT-23
MMBD1204
MMBD1203
MMBD1205
marking P2 sot-23
marking wa sot-23
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transistor 1201 1203 1205
Abstract: MMBD1201 MMBD1203 MMBD1204A MMBD1205A wA MARKING SOT-23 SERIES DIODE marking P2 sot-23 fairchild s sot-23 Device Marking
Text: CONNECTION DIAGRAMS 3 3 1201 3 1203 24 3 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 1 1 2 3 3 1204 1 2 1 1205 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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OT-23
MMBD1201
MMBD1204A
MMBD1203
MMBD1205A
transistor 1201 1203 1205
wA MARKING SOT-23 SERIES DIODE
marking P2 sot-23
fairchild s sot-23 Device Marking
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mmbd1200
Abstract: ST 1203
Text: CONNECTION DIAGRAMS 3 3 1201 3 1203 24 3 2 NC 1 1 2 SOT-23 2 MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 1 1 2 3 3 1204 1 2 1 1205 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MMBD1201
OT-23
MMBD1204A
MMBD1203
MMBD1205A
mmbd1200
ST 1203
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marking code 604 SOT23
Abstract: NPN transistors sot-23 26 Q62702-F1065 Q62702-F1066 Q62702-F976 Q62702-F977 IC ua 74
Text: NPN Silicon High-Voltage Transistors BFN 24 BFN 26 Suitable for video output stages in TV sets and switching power supplies ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BFN 25, BFN 27 PNP ● Type Marking
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Q62702-F1065
Q62702-F976
OT-23
marking code 604 SOT23
NPN transistors sot-23 26
Q62702-F1065
Q62702-F1066
Q62702-F976
Q62702-F977
IC ua 74
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FLs marking code SOT23
Abstract: Q62702-F1066 Q62702-F977
Text: PNP Silicon High-Voltage Transistors BFN 25 BFN 27 Suitable for video output stages in TV sets and switching power supplies ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BFN 24, BFN 26 NPN ● Type Marking
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Q62702-F1066
Q62702-F977
OT-23
FLs marking code SOT23
Q62702-F1066
Q62702-F977
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Q62702-F1065
Abstract: Q62702-F976
Text: NPN Silicon High-Voltage Transistors BFN 24 BFN 26 Suitable for video output stages in TV sets and switching power supplies ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BFN 25, BFN 27 PNP ● Type Marking
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Q62702-F1065
Q62702-F976
OT-23
Q62702-F1065
Q62702-F976
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pt 4515
Abstract: MMPZ5250B 52B zener MMSZ5259S MMHZ5246B marking 24b sot-23 MMCZ5248B MMPZ5248B MMDZ5235B MMGZ5242B
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Marking Min Nom Max Volts Volts Volts Test current IZT(mA) Maximum Zener impedance ZZT at IZT (Ω) 30 30 30 30 29 28 24 23 22 19 17 11 7 7
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marking K1R
Abstract: AEC-Q101 AECQ101 AECQ-101 C1R SOT23
Text: BC846A-BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • Ideally Suited for Automatic Insertion Complementary PNP Types Available BC856 – BC858 For switching and AF Amplifier Applications
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BC846A-BC848C
BC856
BC858)
AEC-Q101
J-STD-020
MIL-STD-202,
BC846A
BC848C
DS11108
marking K1R
AECQ101
AECQ-101
C1R SOT23
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marking 702 sot23
Abstract: 702 sot23 SP SOT23 ON5258 marking code 10 sot23 marking code p12 sot23 MARKING CODE 13 SOT23 Philips SOT23 code marking ON5257 marking code 702 SOT23
Text: New Marking Codes SOT23 New Marking Codes SOT23 SOT23 Types from Hamburg, Hazel Grove and Nijmegen without a vendor code will be changed in their marking to a two digit product code and a one digit vendor code. The vendor code indicates the location of the assembly,
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BSR18A
marking 702 sot23
702 sot23
SP SOT23
ON5258
marking code 10 sot23
marking code p12 sot23
MARKING CODE 13 SOT23
Philips SOT23 code marking
ON5257
marking code 702 SOT23
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BF861
Abstract: BF861A BF861B BF861C bf861 application
Text: BF861A; BF861B; BF861C N-channel junction FETs Rev. 04 — 24 September 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical junction field effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against
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BF861A;
BF861B;
BF861C
MSC895
BF861
BF861A
BF861B
BF861C
bf861 application
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Untitled
Abstract: No abstract text available
Text: MMBZ5V6AL - MMBZ33VAL 24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS Features Mechanical Data • Dual TVS in Common Anode Configuration • Case: SOT23 • 24W/40W Peak Power Dissipation Rating @ 1.0ms • Case Material: Molded Plastic “Green” Molding Compound.
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MMBZ33VAL
4W/40W
225mW
AEC-Q101
J-STD-020
MIL-STD-202,
42dge
DS30306
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2N7002 NXP MARKING
Abstract: ON5520 fet SMD CODE PACKAGE SOT23 2n7002 nxp FET marking codes smd diode 2n7002 marking code 2N7002 smd TRANSISTOR code marking 05 sot23
Text: ON5520 N-channel TrenchMOS FET Rev. 01 — 24 March 2009 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using TrenchMOS technology.
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ON5520
O-236AB)
2N7002
ON5520
2N7002 NXP MARKING
fet SMD CODE PACKAGE SOT23
2n7002 nxp
FET marking codes
smd diode 2n7002 marking code
smd TRANSISTOR code marking 05 sot23
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Untitled
Abstract: No abstract text available
Text: SO T2 3 PMV30UN2 20 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV30UN2
O-236AB)
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marking W26 sot23
Abstract: SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89
Text: PACKAGE OUTLINES Linear ICs SURFACE MOUNT PACKAGES SOT23-3 SOT-23 0.7 1.0 3 e1 2.4 Marking e 0.95 e 0.95 e1 1.90 Recommended Mounting Pad + 0.1 0.4 0.95 2 1.6 0.1 1.1 0 - 0.1 1.4 max (0.3) 2.9 max. e 15 0.95 (0.4) 0.15 e + 0.1 1 C1 0.1 + 0.3 2.8 Dimensions are shown in millimeters
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OT23-3
OT-23)
OT23-5
OT-25)
TK73249M
OT23L-8
TK73250M
TK73255M
marking W26 sot23
SOT23-5 marking 016
sot23 w32
Marking c9 SOT23-5
W32 MARKING
SOT23-6 MARKING b4
sot89-5 PAD
Marking P35 sot89
SOT23-5 MARKING g5
Marking code 33 29 SOT89
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PMV40UN2
Abstract: No abstract text available
Text: SO T2 3 PMV40UN2 30 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV40UN2
O-236AB)
PMV40UN2
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2N7002 MARKING 702
Abstract: 2n7002 MARKING 2N7002 PHILIPS MARKING BSS84 MARKING CODE marking 702 sot23 Philips MARKING CODE BSN20 MARKING sot23 02p PMBF170 pkx codes marking 2N7002
Text: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 M8p BSN20W M8t BSS84 SP BSS87 KA BSS123 SA BSS192 KB BST80 KM BST82
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OT323
BSN20
BSN20W
BSS84
BSS87
BSS123
BSS192
BST80
BST82
BST84
2N7002 MARKING 702
2n7002 MARKING
2N7002 PHILIPS MARKING
BSS84 MARKING CODE
marking 702 sot23
Philips MARKING CODE
BSN20 MARKING
sot23 02p
PMBF170 pkx
codes marking 2N7002
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fairchild 1P
Abstract: No abstract text available
Text: S E M IC O N D U C T O R MMBD1201 /1203 /1204 /1205 CONNECTION f 1201 DIAGRAMS 3 1 2NC 1204 t MARKING MMBD1201 24 MMBD1204A 27 MMBD1203 26 MMBD1205A 28 * 1 2 3 I I SOT-23 1203^ 3 * ^ * + 1 ; 205 * J 2 High Conductance Ultra Fast Diode S o u rce d fro m P roce ss 1P.
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MMBD1201
OT-23
MMBD1204A
MMBD1203
MMBD1205A
fairchild 1P
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BD120
Abstract: No abstract text available
Text: MlC O N D U C T O R D iscrete POWER & S ig n a l Technologies i MMBD1201 /1203 /1204 /1205 CONNECTION f' 1201 DIAGRAMS 3 ^ r1 * * 1 3 2 NC 1204 1203 1 2 3 3 I 1205 MARKING SOT-23 M M B D1201 24 M M B D1204A 27 M M B D 1203 26 M M B D1205A 28 V J 2 ’ High Conductance Ultra Fast Diode
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MMBD1201
OT-23
D1201
D1204A
D1205A
BD120
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