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    MARKING 2F SOT 23 Search Results

    MARKING 2F SOT 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 2F SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MARKING 2F SOT23

    Abstract: sot23 marking 2f 2f bc850 BC850 marking 2f 3
    Text: SEMICONDUCTOR BC850 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 2F 1 2 Item Marking Description Device Mark 2 BC850 hFE Grade F F, G * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


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    BC850 OT-23 MARKING 2F SOT23 sot23 marking 2f 2f bc850 BC850 marking 2f 3 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A TRANSISTOR PNP SOT-23 1. BASE 2. EMITTER FEATURES y Epitaxial planar die construction y Complementary NPN Type available(MMBT2222A) 3. COLLECTOR MARKING:2F


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    OT-23 MMBT2907A OT-23 MMBT2222A) -500mA -150mA -15mA -500mA -50mA PDF

    marking 2f 3

    Abstract: MMBT2222A MMBT2907A marking 2f
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 MMBT2907A Plastic-Encapsulate Transistors SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR


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    OT-23 MMBT2907A MMBT2222A) -10mA -500mA -150mA -15mA -500mA -50mA marking 2f 3 MMBT2222A MMBT2907A marking 2f PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT2907A SOT-23 TRANSISTOR PNP FEATURES z Epitaxial planar die construction z Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F 3. COLLECTOR


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    OT-23 MMBT2907A OT-23 MMBT2222A) Temperature-10V -10mA -500mA -150mA -15mA -500mA PDF

    2SA1037KGP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD 2SA1037KGP SURFACE MOUNT PNP Silicon Transistor VOLTAGE 50 Volts CURRENT 150 mAmpere APPLICATION * Medium Power Amplifier . FEATURE * Surface mount package. SOT-23 SOT-23 .055 (1.40) .047 (1.20) MARKING * 2F- .019 (0.50) (2) .103 (2.64)


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    2SA1037KGP OT-23) OT-23 150mW 120mW 2SA1037KGP PDF

    2F PNP SOT23

    Abstract: marking 2f 2f transistor SOt23
    Text: MMBT2907A SOT-23 Transistor PNP SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — — Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) MARKING:2F Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25℃ unless otherwise noted)


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    MMBT2907A OT-23 OT-23 MMBT2222A) -150mA -15mA -10mA -500mA 2F PNP SOT23 marking 2f 2f transistor SOt23 PDF

    CMBT2907

    Abstract: CMBT2907A
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS


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    OT-23 CMBT2907 CMBT2907A 500mA; C-120 CMBT2907 CMBT2907A PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS


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    OT-23 CMBT2907 CMBT2907A 500mA; C-120 PDF

    CMBT2907

    Abstract: CMBT2907A
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT2907 CMBT2907A SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking CMBT2907 = 2B CMBT2907A = 2F PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


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    ISO/TS16949 OT-23 CMBT2907 CMBT2907A 500mA; C-120 CMBT2907 CMBT2907A PDF

    BC849

    Abstract: BC849B BC849C BC850 BC850B BC850C
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G PACKAGE OUTLINE DETAILS


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    ISO/TS16949 OT-23 BC849 BC850 BC849B BC849C BC850B 8C850C BC849 BC849B BC849C BC850 BC850B BC850C PDF

    2f bc850

    Abstract: BC849 BC849B BC849C BC850 BC850B BC850C
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC849 BC850 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC849 = 2D BC849B = 2B BC849C = 2C BC850 = 2H BC850B = 2F 8C850C = 2G


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    OT-23 BC849 BC850 BC849B BC849C BC850B 8C850C 2f bc850 BC849 BC849B BC849C BC850 BC850B BC850C PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR


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    MMBT2907A MMBT2907A OT-23 QW-R206-030 PDF

    pnp 2f

    Abstract: No abstract text available
    Text: UTC MMBT2907A PNP EPITAXIAL PLANAR TRANSISTOR PNP GENERAL PURPOSE AMPLIFIER FEATURES This UTC MMBT2907A is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. 2 1 MARKING 3 2F SOT-23 1:EMITTER 2:BASE 3:COLLECTOR


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    MMBT2907A MMBT2907A OT-23 QW-R206-030 pnp 2f PDF

    Untitled

    Abstract: No abstract text available
    Text: LMR14206 www.ti.com SNVS733D – OCTOBER 2011 – REVISED APRIL 2013 LMR14206 SIMPLE SWITCHER 42Vin, 0.6A Step-Down Voltage Regulator in SOT-23 Check for Samples: LMR14206 FEATURES DESCRIPTION • • • • • • • • • • The LMR14206 is a PWM DC/DC buck step-down


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    LMR14206 SNVS733D LMR14206 42Vin, OT-23 V-42V, PDF

    sot-23 Marking 2F

    Abstract: No abstract text available
    Text: MMBT2907A 350mW, PNP Small Signal Transistor Small Signal Product Features SOT-23 ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin Sn lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant


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    MMBT2907A 350mW, OT-23 MIL-STD-202, C/10s sot-23 Marking 2F PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT2907A 350mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 G D ­Matte Tin Sn lead finish with Nickel(Ni) underplate


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    MMBT2907A 350mW, OT-23 MIL-STD-202, PDF

    a10 transistor

    Abstract: marking code 2f MMBT2907A sot 23 marking code NT MARKING NT SOT23
    Text: MMBT2907A 350mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate


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    MMBT2907A 350mW, OT-23 MIL-STD-202, a10 transistor marking code 2f MMBT2907A sot 23 marking code NT MARKING NT SOT23 PDF

    On semiconductor date Code sot-23

    Abstract: sot-23 body marking C 1 sot-23 body marking A 4 BC847BLT1G MARKING A1 SOT-23 SOT-23 marking 2F sot-23 body marking A c marking code SOT-23 2F Code sot-23 on semiconductor MARKING 1L SOT-23
    Text: BC846ALT1 Series BC846, BC847 and BC848 are Preferred Devices General Purpose Transistors NPN Silicon Features • Moisture Sensitivity Level: 1 • ESD Rating − Human Body Model: >4000 V • COLLECTOR 3 ESD Rating − Machine Model: >400 V Pb−Free Packages are Available


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    BC846ALT1 BC846, BC847 BC848 BC846 BC847, BC850 BC848, BC849 On semiconductor date Code sot-23 sot-23 body marking C 1 sot-23 body marking A 4 BC847BLT1G MARKING A1 SOT-23 SOT-23 marking 2F sot-23 body marking A c marking code SOT-23 2F Code sot-23 on semiconductor MARKING 1L SOT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor PNP Silicon LMBT2907LT1G LMBT2907ALT1G • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 3 MAXIMUM RATINGS Rating Symbol Value 2907 2907A –40 –60 V CEO Collector–Base Voltage


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    LMBT2907LT1G LMBT2907ALT1G PDF

    2907 TRANSISTOR PNP

    Abstract: transistor 2907 Q68000-A8300 MARKING 7C
    Text: SIEMENS PNP Silicon Switching Transistor • High current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage SXT 2907 A Type Marking Ordering Code tape and reel PinC Contigui ation 1 2 3 Package1) SXT 2907 A 2F Q68000-A8300 B SOT-89 C E


    OCR Scan
    Q68000-A8300 OT-89 ----VBE-20V fl53SbDS 23SLDS Q155blfl 2907 TRANSISTOR PNP transistor 2907 MARKING 7C PDF

    transistor 1f sot-23

    Abstract: sot23 AJ motorola sot 23 marking transistor marking code SOT-23 BC817B marking 1F transistor sot-23 transistor marking code SOT-23 2F marking 1P sot-23 sot 23 transistor 2f sot transistor pinout
    Text: oatrif ©® SOT 23 Microminiature Space Saving Alternatives for Discrete Devices • Packaging — M otorola standard shipping A wide variety of discrete components from method for SOT’s is in vials; additionally, in M otorola's repertoire of reliability-proven sem icon­


    OCR Scan
    BCX70J BC81740 BC850B BC817B BCW72 BCX704 BC817-25 BCX70G BC847A BC817-16 transistor 1f sot-23 sot23 AJ motorola sot 23 marking transistor marking code SOT-23 marking 1F transistor sot-23 transistor marking code SOT-23 2F marking 1P sot-23 sot 23 transistor 2f sot transistor pinout PDF

    BC859B 215

    Abstract: motorola MMBT3906 sot-23 BCs56 BSX39 BC860C Motorola BCW71H 5H MARKING MARKING 5H BSX39 sot23 BC818-16
    Text: SURFACE MOUNT PRODUCTS — SOT 23 continued General-Purpose SOT-23 Transistors (continued) Pinout: 1-Base, 2-Emitter, 3-C ollector D evices are listed in o rd e r of descending breakdow n voltage. NPN Device Type hFE *T v BR(CEO) Min Max @ >C (mA) Min (MHz)


    OCR Scan
    OT-23 BC818-25 BC818-16 BCX20 MMBT4124 BCW32 BC856B BC856A MMBT2907A BC857C BC859B 215 motorola MMBT3906 sot-23 BCs56 BSX39 BC860C Motorola BCW71H 5H MARKING MARKING 5H BSX39 sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: ' Sv m Se m i ' SOT -23 Plastic Encapsulate Transistors 5YM5ÊMI 5EMIC0MDUCT0R MMBT2907AL GE 2 .4 1.3 T1 TRANSI ST OR PNP FEA TURES SO T-23 Power dissipation Pa 1. BASE : 0.3 W <(iflb=25'C) Collector current 2. EMITTER 3. COLLECT fcn : - 0. a OR Collector-base voltage


    OCR Scan
    MMBT2907AL -50mA, 100MHz OT-23 950TPY 037TPY 550REF 022REF PDF

    FMMT2222A

    Abstract: FMMT-A06 BCV71 BCV72 BCW29 BCW30 BCW31 BCW32 BCW33 BFQ31
    Text: SOT-23 TRANSISTORS & DIODES PRODUCT LISTANO DEVICE IDENTIFICATION TRANSISTORS TRANSISTORS Standard marking Reverse Joggle marking BCV71 BCV72 K7 K8 K6 K9 BCW29 BCW30 BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW61A BCW61B BCW61C BCW61D BCW65A BCW65B BCW65C


    OCR Scan
    OT-23 BCV71 BFQ31 BCV72 BFQ31A BCW29 BFS20 BCW30 BCW31 BCW32 FMMT2222A FMMT-A06 BCW33 PDF