DIODE Ifavm 30 A
Abstract: 8P030AS 8P030
Text: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery Preliminary Data VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Cathode 8P030AS Cathode (Flange) Anode Symbol Conditions Maximum Ratings
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8-03AS
O-252AA
8P030AS
DIODE Ifavm 30 A
8P030AS
8P030
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Untitled
Abstract: No abstract text available
Text: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Cathode 8P030AS Cathode (Flange) Anode Symbol Conditions Maximum Ratings IFRMS IFAVM ①
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8-03AS
8P030AS
O-252AA
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to252aadpak
Abstract: No abstract text available
Text: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Anode 8P030AS Cathode (Flange) Anode Symbol Conditions Maximum Ratings IFRMS IFAVM ①
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8-03AS
O-252AA
8P030AS
to252aadpak
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Untitled
Abstract: No abstract text available
Text: DSEP 8-03AS HiPerFREDTM Epitaxial Diode IFAVM = 8 A VRRM = 300 V trr = 30 ns with soft recovery VRSM V VRRM V Type 300 300 DSEP 8-03AS C A Marking on product TO-252AA DPAK Anode 8P030AS Cathode (Flange) Anode Conditions Maximum Ratings IFRMS IFAVM ① IFRM
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8-03AS
O-252AA
8P030AS
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DPG10I300PA
Abstract: No abstract text available
Text: DPG 10 IM 300 UC advanced V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 3 2 Marking on Product: PAOGUI Backside: cathode Features / Advantages:
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60747and
DPG10I300PA
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03866
Abstract: 07062
Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:
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60747and
20090323a
03866
07062
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DPG10I300PA
Abstract: dpak DIODE ANODE COMMON
Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:
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60747and
20090323a
DPG10I300PA
dpak DIODE ANODE COMMON
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DPG10I300PA
Abstract: diode t 3866 t 3866 power transistor dpak DIODE ANODE COMMON
Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number DPG 10 IM 300 UC 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Applications:
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60747and
20090323a
DPG10I300PA
diode
t 3866
t 3866 power transistor
dpak DIODE ANODE COMMON
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DPG10I300PA
Abstract: No abstract text available
Text: DPG 10 IM 300 UC V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 300 V 10 A 35 ns Part number 1 2 3 Marking on Product: PAOGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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60747and
20090323a
DPG10I300PA
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DPG10I300PA
Abstract: No abstract text available
Text: DPG10IM300UC HiPerFRED² VRRM = 300 V I FAV = 10 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG10IM300UC Marking on Product: PAOGUI Backside: cathode 1 3 2/4 Features / Advantages: Applications:
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DPG10IM300UC
O-252
60747and
20131125a
DPG10I300PA
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ignition IGBT
Abstract: ngb15n41 aac marking NGB15N41CLT4
Text: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
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NGD15N41CLT4,
NGB15N41CLT4,
NGP15N41CL
O-220
1255C)
NGD15N41CL
NGD15N41CLT4
ignition IGBT
ngb15n41
aac marking
NGB15N41CLT4
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6P060AS
Abstract: marking diode 6a
Text: DSEP6-06AS HiPerFRED VRRM = 600 V I FAV = 6A t rr = 20 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP6-06AS Marking on Product: 6P060AS Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-252 DPak
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DSEP6-06AS
6P060AS
60747and
20110915a
6P060AS
marking diode 6a
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NGP15N41CL
Abstract: NGB15N41CLT4 NGD15N41CL NGD15N41CLT4 Direct fuel injection aac marking
Text: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N–Channel DPAK, D2PAK and TO–220 This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped
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NGD15N41CLT4,
NGB15N41CLT4,
NGP15N41CL
r14525
NGD15N41CL/D
NGP15N41CL
NGB15N41CLT4
NGD15N41CL
NGD15N41CLT4
Direct fuel injection
aac marking
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NGD15N41CL-D
Abstract: NGP15N41CL NGB15N41CLT4 NGD15N41CL NGD15N41CLT4
Text: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N–Channel DPAK, D2PAK and TO–220 This Logic Level Insulated Gate Bipolar Transistor IGBT features monolithic circuitry integrating ESD and Over–Voltage clamped
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NGD15N41CLT4,
NGB15N41CLT4,
NGP15N41CL
r14525
NGD15N41CL/D
NGD15N41CL-D
NGP15N41CL
NGB15N41CLT4
NGD15N41CL
NGD15N41CLT4
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15N41CLG
Abstract: 15N41CLG transistor 15N41G 15n41 NGP15N41CLG NGB15N41CLT4
Text: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
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NGD15N41CLT4,
NGB15N41CLT4,
NGP15N41CL
O-220
NGD15N41CL/D
15N41CLG
15N41CLG transistor
15N41G
15n41
NGP15N41CLG
NGB15N41CLT4
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15N41cLG
Abstract: 15N41G 15n41 NGP15N41CLG 15N41CLG transistor NGD15N41CL NGB15N41CL NGD15N41CLT4 NGP15N41CL NGB15N41CLT4
Text: NGD15N41CL, NGB15N41CL, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
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NGD15N41CL,
NGB15N41CL,
NGP15N41CL
O-220
NGD15N41CL/D
15N41cLG
15N41G
15n41
NGP15N41CLG
15N41CLG transistor
NGD15N41CL
NGB15N41CL
NGD15N41CLT4
NGP15N41CL
NGB15N41CLT4
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15N41CLG
Abstract: 15N41G 15n41 NGP15N41CLG 15N41CLG transistor NGD15N41A 350VVGE gd 361 transistor NGB15N41A NGP15N41AC
Text: NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V http://onsemi.com 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V N−Channel DPAK, D2PAK and TO−220 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
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NGD15N41CL,
NGD15N41ACL,
NGB15N41CL,
NGB15N41ACL,
NGP15N41CL,
NGP15N41ACL
O-220
NGD15N41CL/D
15N41CLG
15N41G
15n41
NGP15N41CLG
15N41CLG transistor
NGD15N41A
350VVGE
gd 361 transistor
NGB15N41A
NGP15N41AC
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15N41G
Abstract: No abstract text available
Text: NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V http://onsemi.com 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V N−Channel DPAK, D2PAK and TO−220 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
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NGD15N41CL,
NGD15N41ACL,
NGB15N41CL,
NGB15N41ACL,
NGP15N41CL,
NGP15N41ACL
NGD15N41CL/D
15N41G
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071 0039
Abstract: ngb15n41 NGB15N41CLT4
Text: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
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NGD15N41CLT4,
NGB15N41CLT4,
NGP15N41CL
O-220
NGD15N41CL/D
071 0039
ngb15n41
NGB15N41CLT4
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NGB15N41CLT4
Abstract: NGD15N41CL NGD15N41CLT4 NGP15N41CL
Text: NGD15N41CLT4, NGB15N41CLT4, NGP15N41CL Preferred Device Ignition IGBT 15 Amps, 410 Volts http://onsemi.com N−Channel DPAK, D2PAK and TO−220 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
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NGD15N41CLT4,
NGB15N41CLT4,
NGP15N41CL
O-220
NGD15N41CL/D
NGB15N41CLT4
NGD15N41CL
NGD15N41CLT4
NGP15N41CL
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Untitled
Abstract: No abstract text available
Text: MURD320 Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package http://onsemi.com . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state- of- the- art devices have the following features: ULTRAFAST
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MURD320
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN3024LK3 30V TO252 DPAK N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V(BR)DSS ID RDS(on) TA = 25°C 24mΩ @ VGS= 10V 14.4A 39mΩ @ VGS= 4.5V 11.6A • Low on-resistance • Fast switching speed
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DMN3024LK3
J-STD-020D
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DMN3024LK3-13
Abstract: DMN3024LK3 J-STD-020D
Text: A Product Line of Diodes Incorporated DMN3024LK3 30V TO252 DPAK N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V(BR)DSS Features and Benefits ID RDS(on) TA = 25°C 24mΩ @ VGS= 10V 14.4A 39mΩ @ VGS= 4.5V
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DMN3024LK3
J-STD-020D
DMN3024LK3-13
DMN3024LK3
J-STD-020D
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D-PAK B340
Abstract: b320 dpak MBRD360 marking 300 DPAK MBRD320 MBRD330 MBRD330RL MBRD330T4 dc marking code dpak DPAK marking code 300
Text: MBRD320, MBRD330, MBRD340, MBRD350, MBRD360 MBRD320, MBRD340 and MBRD360 are Preferred Devices SWITCHMODE Power Rectifiers http://onsemi.com DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20 TO 60 VOLTS . . . designed for use as output rectifiers, free wheeling, protection
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MBRD320,
MBRD330,
MBRD340,
MBRD350,
MBRD360
MBRD340
MBRD360
D-PAK B340
b320 dpak
marking 300 DPAK
MBRD320
MBRD330
MBRD330RL
MBRD330T4
dc marking code dpak
DPAK marking code 300
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