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    MARKING 351 SOT23 Search Results

    MARKING 351 SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation

    MARKING 351 SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HSMS-8205

    Abstract: 8205 sot143 code marking l30 HSMS8202 8205 datasheet HSMS-8101 HSMS-8202 HSMS-8207 SCHOTTKY DIODE SOT-143 marking 8205
    Text: Surface Mount Microwave Schottky Mixer Diodes Technical Data HSMS-8101 Single HSMS-8202 Pair HSMS-8205 Pair HSMS-8207 Quad Plastic SOT-23 Package Features • Optimized for use at 10-14␣ GHz • Low Capacitance • Low Conversion Loss Package Lead Code Identification


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    HSMS-8101 HSMS-8202 HSMS-8205 HSMS-8207 OT-23 OT-143 OT-143) 8205 sot143 code marking l30 HSMS8202 8205 datasheet SCHOTTKY DIODE SOT-143 marking 8205 PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 BSH111BK 55 V, N-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET


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    BSH111BK O-236AB) PDF

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 BSN20BK 60 V, N-channel Trench MOSFET 18 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.


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    BSN20BK O-236AB) PDF

    C2 top mark sc70-5

    Abstract: marking SH SOT23 marking 2E9 Marking G9 SOT23-5
    Text: Single, Dual, Quad General Purpose Micropower, RRIO Operational Amplifiers ISL28114, ISL28214, ISL28414 Features The ISL28114, ISL28214, and ISL28414 are single, dual, and quad channel general purpose micropower, rail-to-rail input and output operational amplifiers with supply voltage range of


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    ISL28114, ISL28214, ISL28414 ISL28414 ISL28x14 ISL28114 SC70-5 OT23-5 C2 top mark sc70-5 marking SH SOT23 marking 2E9 Marking G9 SOT23-5 PDF

    marking AF sc70-5

    Abstract: BKA SOT M15 SOT-23 4985 st sc70-5 top mark C2 MDP-0
    Text: Single, Dual, Quad General Purpose Micropower, RRIO Operational Amplifiers ISL28114, ISL28214, ISL28414 Features The ISL28114, ISL28214, and ISL28414 are single, dual, and quad channel general purpose micropower, rail-to-rail input and output operational amplifiers with supply voltage range of


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    ISL28114, ISL28214, ISL28414 ISL28414 ISL28x14 ISL28114 SC70-5 OT23-5 marking AF sc70-5 BKA SOT M15 SOT-23 4985 st sc70-5 top mark C2 MDP-0 PDF

    spice models TIP 127

    Abstract: BKA SOT G2 SOT23-8
    Text: Single, Dual, Quad General Purpose Micropower, RRIO Operational Amplifiers ISL28114, ISL28214, ISL28414 Features The ISL28114, ISL28214, and ISL28414 are single, dual, and quad channel general purpose micropower, rail-to-rail input and output operational amplifiers with supply voltage range of


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    ISL28114, ISL28214, ISL28414 ISL28414 ISL28x14 ISL28114 SC70-5 OT23-5 spice models TIP 127 BKA SOT G2 SOT23-8 PDF

    Y1416

    Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information


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    AND8004/D 14xxx Y1416 vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363 PDF

    Untitled

    Abstract: No abstract text available
    Text: Single, Dual, Quad General Purpose Micropower, RRIO Operational Amplifiers ISL28114, ISL28214, ISL28414 Features The ISL28114, ISL28214, and ISL28414 are single, dual, and quad channel general purpose micropower, rail-to-rail input and output operational amplifiers with supply voltage range of


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    ISL28114, ISL28214, ISL28414 ISL28414 ISL28x14 FN6800 PDF

    SOT23-6 MARKING 333

    Abstract: No abstract text available
    Text: NLAS4625 Pr oduct Preview Low Voltage Single Supply SPDT Analog Switch The NLAS4625 is an advanced high speed CMOS single pole − double throw analog switch fabricated with silicon gate CMOS technology. It achieves high speed propagation delays and low ON


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    NLAS4625 OT23-6/TSOP-6/SC59-6 NLAS4625 SOT23-6 MARKING 333 PDF

    A9 SOT-23

    Abstract: sumitomo epoxy General Electric scr SOT-23 scr SOT-23 Sensor Cement Capacitor sot-23 Marking G1 C1995 LM45 LM45B LM45BIM3
    Text: LM45B LM45C SOT-23 Precision Centigrade Temperature Sensors Y General Description Y The LM45 series are precision integrated-circuit temperature sensors whose output voltage is linearly proportional to the Celsius Centigrade temperature The LM45 does not


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    LM45B LM45C OT-23 20-3A A9 SOT-23 sumitomo epoxy General Electric scr SOT-23 scr SOT-23 Sensor Cement Capacitor sot-23 Marking G1 C1995 LM45 LM45BIM3 PDF

    Untitled

    Abstract: No abstract text available
    Text: ◆CMOS ◆Low Power Consumption :35µA TYP. ◆Maximum Output Current :More than 700mA (800mA limit, TYP.) ◆Dropout Voltage :50mV @ 100mA :100mV @ 200mA ◆Operating Voltage Range :1.5V ~ 6.0V ◆Output Voltage Range :0.8V ~ 5.0V ◆Low ESR Capacitor Compatible


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    700mA 800mA 100mA 100mV 200mA XC6210 XC6210 PDF

    Untitled

    Abstract: No abstract text available
    Text: Centrali TM CMPDM7002A Semiconductor Corp. SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET DESCRIPTION: The CENTRAL SEM ICO NDUCTOR CMPDM7002A is special version of the 2N7002 Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel


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    CMPDM7002A 2N7002 C702A CP324 20-February CMPDM7002A OT-23 OT-23 PDF

    MMBA812M7

    Abstract: MMBA812M3
    Text: MOTOROLA SC -CXSTRS/R *5.5*5^254 MOTOROLA SC M A X IM U M RATINGS F> D Ejb3b7254 XSTRS/R F Rating Symbol Value Unit v CEO 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage V eb o 5.0 Vdc lc 100 mAdc Symbol Max U nit Pd 225 mW 1.8 m W /X Roja


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    Ejb3b7254 MMBA812M3 OT-23 O-236AA/AB) MMBA812M3 MMBA812M4 MMBA812M5 MMBA812M6 MMBA812M7 MMBA812M7 PDF

    C1P TRANSISTOR

    Abstract: CMPT2222A MARKING CODE
    Text: Central" Semiconductor Corp. CMPT2222A DESCRIPTION: NPN SILICON TRANSISTOR The Central Semiconductor CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a sur­ face mount package, designed for small signal,


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    CMPT2222A OT-23 100mA, 150mA, 26-September C1P TRANSISTOR MARKING CODE PDF

    marking A7s

    Abstract: siemens em 350 99 DIODE marking 351
    Text: SIEMENS Silicon Switching Diode Array BAV 99 Features • For high-speed switching • Connected in series Type Marking Ordering Code tape and reel BAV 99 A7s Q68000-A549 Pin Configuration Package1) SOT-23 3 ¿— EH I IX ° P U 07005 Maximum Ratings per Diode


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    Q68000-A549 OT-23 BAV99 M0076 marking A7s siemens em 350 99 DIODE marking 351 PDF

    Untitled

    Abstract: No abstract text available
    Text: u G eneral S e m ic o n d u c t o r * _ GTF202 USB Downstream Port Filter &TVS for EMI Filtering and ESD Protection *w SOT-23-6L 0.120 3.05 0.110(2.60) T 0.014 (0.35) ' sr0'”0 •I I U — 0.040 (1.05) 0.033 (0.85) I T T D(IN) \ 2 0.070(1.75)


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    GTF202 OT-23-6L GTF202 GTF202-22 GTF202-30) PDF

    Untitled

    Abstract: No abstract text available
    Text: I 1 , 1. t N AMER PHILIPS/DISCRETE QbE D bb53T31 0015704 1 • BF536 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature plastic envelope. Primarily intended for use as mixer in v.h.f. tuners. Also suitable as r.f. amplifier and oscillator in f.m. tuners.


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    bb53T31 BF536 001570b T-31-15 PDF

    MMBD2010T1

    Abstract: MMBD1010LT1 MMBD3010 DIODE marking 351 mmbd2010
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G R E E I N E MMBD1010LT1 MMBD2010T1 MMBD3010T1 Sw itching Diode Part of the GreenLine Portfolio of devices with energy-conserving traits. This switching diode has the following features: • Very Low Leakage < 500 pA promotes extended battery life by decreas­


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    MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 MMBD3010 DIODE marking 351 mmbd2010 PDF

    HSMS-8205

    Abstract: MARKING- L31 SOT-23 marking l31 SOT 143 MARKING 2T marking 2r Schottky L30 SOT143
    Text: What HEWLETT* mLliM PA C K A R D Surface Mount Microwave Schottky Mixer Diodes Technical Data Features h s m s -s i o i sin gle HSMS-8202 Pair HSMS-8205 Pair HSMS-8207 Quad Plastic SOT-23 Package • Optimized for use at 10-14 GHz • Low Capacitance • Low Conversion Loss


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    HSMS-8202 HSMS-8205 HSMS-8207 OT-23 OT-143 OT-23) OT-143) iT0T55 MARKING- L31 SOT-23 marking l31 SOT 143 MARKING 2T marking 2r Schottky L30 SOT143 PDF

    TA 8202 K

    Abstract: L30 SOT143 SOT-23 marking l31 8e8n
    Text: Wag H E W L E T T PACKARD m SEM Surface Mount Microwave Schottky Mixer Diodes Technical Data Features HSMS-8101 HSMS-8202 HSMS-8205 HSMS-8207 Plastic SOT-23 Package • Optimized for use at 10-14 GHz • Low Capacitance Single Pair Pair Quad Package Lead Code


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    HSMS-8101 HSMS-8202 HSMS-8205 HSMS-8207 OT-23 OT-143 OT-23) OT-143) TA 8202 K L30 SOT143 SOT-23 marking l31 8e8n PDF

    Marking R1P

    Abstract: r1p 11 TRANSISTOR R2X SOT23 sst2222a R1P SOT-223
    Text: Die no. C-31 NPN medium power transistor These epitaxial planar NPN silicon transistors are gold doped. Dimensions Units : mm SST3 Features • 0.951 f 1' 0.45±0.1 l.9±0.2 available in the following packages: |0.9S^0,tej L — SST3 (SST, SOT-23) — SMT3 (SMT, SC-59)


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    OT-23) SC-59) OT-323) OT-89) Marking R1P r1p 11 TRANSISTOR R2X SOT23 sst2222a R1P SOT-223 PDF

    MMBA811C6

    Abstract: MMBA812M5 fr5 transistor MMBA812M6 MMBC1622D6 25CC BSS79B BSS79C BSS82B BSS82C
    Text: motorola sc 6367254 -c x s t r s / r f > MOTOROLA S C Tb DE 1 CXSTRS/R F M ax im u m r a t i n g s 96 D 8 1 9 6 9 Value VCEO 40 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage Ve b O 6.0 Vdc lc 100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C Ro ja


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    b3b7254 BSS79B BSS79C MPS3904 MMBC1622D6 MMBC1622D7 MMBA811C6 MMBA812M5 fr5 transistor MMBA812M6 25CC BSS79B BSS79C BSS82B BSS82C PDF

    leader 400 charger

    Abstract: lm7221 LM722 c01a LMC7211 LMC7221 LMC7221AIN LMC7221BIM LMC7221BIN M08A
    Text: September 1995 Semiconductor ß LMC7221 Tiny CMOS Comparator with Rail-To-Rail Input and Open Drain Output General Description Features The LM7221 is a micropower CMOS comparator available in the space saving SOT23-5 package. This makes this comparator Ideal for space and weight critical designs. The


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    LMC7221 LM7221 OT23-5 LMC7221 LMC7211 0541S-000 leader 400 charger LM722 c01a LMC7221AIN LMC7221BIM LMC7221BIN M08A PDF

    WF VQE 13

    Abstract: WF VQE 22 WF VQE 22 c WF VQE 23 D wf vqe 23 wf vqe 13 E wf vqe 14 e WF VQE 22 e WF VQE 23 E Wf VQE 23 F
    Text: Order this document by MC33349/D Lithium B attery Protection C ircuit for One Cell B attery Packs The MC33349 is a monolithic lithium battery protection circuit that is designed to enhance the useful operating life of a one cell rechargeable battery pack. Cell protection features consist of internally trim med charge


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    MC33349/D MC33349 MC33349D WF VQE 13 WF VQE 22 WF VQE 22 c WF VQE 23 D wf vqe 23 wf vqe 13 E wf vqe 14 e WF VQE 22 e WF VQE 23 E Wf VQE 23 F PDF