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    MARKING 37 SCHOTTKY Search Results

    MARKING 37 SCHOTTKY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 37 SCHOTTKY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


    Original     		PDF Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J

    PD3S160

    Abstract: PD3S160-7
    Text: SPICE MODEL: PD3S160 NEW PRODUCT PD3S160 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PowerDI ä323 Mechanical Data Features • Guard Ring Die Construction for Transient Protection · · · · · High Surge Capability Lead Free Finish, RoHS Compliant Note 1


    Original     		PDF PD3S160 AEC-Q101 J-STD-020C MIL-STD-202, DS30899 PD3S160 PD3S160-7

    PD3S160

    Abstract: PD3S160-7
    Text: PD3S160 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PowerDI 323 Please click here to visit our online spice models database. Features • • • • • • Mechanical Data • • Guard Ring Die Construction for Transient Protection High Surge Capability


    Original     		PDF PD3S160 AEC-Q101 J-STD-020D MIL-STD-202, DS30899 621-PD3S160-7 PD3S160-7 PD3S160 PD3S160-7

    PD3S160

    Abstract: marking code z2
    Text: PD3S160 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER NEW PRODUCT Please click here to visit our online spice models database. PowerDI 323 Features • • • • • • Mechanical Data • • Guard Ring Die Construction for Transient Protection High Surge Capability


    Original     		PDF PD3S160 AEC-Q101 J-STD-020C MIL-STD-202, DS30899 PD3S160 marking code z2

    J-STD-020D

    Abstract: PD3S160 PD3S160-7
    Text: PD3S160 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER PowerDI 323 Please click here to visit our online spice models database. Features • • • • • • Mechanical Data • • Guard Ring Die Construction for Transient Protection High Surge Capability


    Original     		PDF PD3S160 AEC-Q101 J-STD-020D DS30899 J-STD-020D PD3S160 PD3S160-7

    V = Device Code

    Abstract: marking code vk, sot-353 GATE MARKING CODE VX SOT23 wz 74 marking fairchild marking codes sot-23 marking code vk, sot-363 marking code V6 diode
    Text: MC74VHC1G04 Inverter The MC74VHC1G04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


    Original     		PDF MC74VHC1G04 353/SC V = Device Code marking code vk, sot-353 GATE MARKING CODE VX SOT23 wz 74 marking fairchild marking codes sot-23 marking code vk, sot-363 marking code V6 diode

    Untitled

    Abstract: No abstract text available
    Text: C4D08120E Silicon Carbide Schottky Diode Z-Rec Rectifier = 12 A = 37 nC 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on VF TO-252-2


    Original     		PDF C4D08120E O-252-2 C4D08120E

    Untitled

    Abstract: No abstract text available
    Text: C4D08120E Silicon Carbide Schottky Diode Z-Rec Rectifier = 12 A = 37 nC 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on VF TO-252-2


    Original     		PDF C4D08120E O-252-2 C4D08120E

    Untitled

    Abstract: No abstract text available
    Text: C4D08120A Silicon Carbide Schottky Diode Z-Rec Rectifier IF TC=135˚C = 11 A = 37 nC Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Extremely Fast Switching Positive Temperature Coefficient on VF


    Original     		PDF C4D08120A O-220-2 C4D08120A

    PD3S160-7

    Abstract: PowerDI323
    Text: PD3S160 Green 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERDI 323 Features • • • • • • Mechanical Data • • Guard Ring Die Construction for Transient Protection High Surge Capability Ultra-Small Surface Mount Package Lead-Free Finish; RoHS Compliant Notes 1 & 2


    Original     		PDF PD3S160 AEC-Q101 POWERDI323 J-STD-020 MIL-STD-202, POWERDI323 DS30899 PD3S160-7

    Untitled

    Abstract: No abstract text available
    Text: PD3S160 Green 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERDI 323 Mechanical Data Features • • • • • • • • Guard Ring Die Construction for Transient Protection High Surge Capability Ultra-Small Surface Mount Package Lead-Free Finish; RoHS Compliant Notes 1 & 2


    Original     		PDF PD3S160 AEC-Q101 POWERDI323 J-STD-020 MIL-STD-202, DS30899

    Untitled

    Abstract: No abstract text available
    Text: PD3S160Q Green 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER POWERDI 323 Product Summary VR V IF (A) 60 1.0 Features and Benefits VF MAX (V) @ +25°C 0.64 IR MAX (mA) @ +25°C 0.05 Description and Applications • Guard Ring Die Construction for Transient Protection


    Original     		PDF PD3S160Q AEC-Q101 DS36942

    BAR43A

    Abstract: marking db2 bar43c BAR43C
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BAR43/A/C/S Features • • • Low Current Leakage. Surface Mount SOT-23 Package 200mW SCHOTTKY DIODE Case Material: Molded Plastic. UL Flammability


    Original     		PDF BAR43/A/C/S OT-23 200mW OT-23 200mA 100mA 100uA BAR43A marking db2 bar43c BAR43C

    V = Device Code

    Abstract: vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A
    Text: MC74VHC1G86 2-Input Exclusive OR Gate The MC74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G86 353/SC V = Device Code vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A

    V = Device Code

    Abstract: MC74VHC1G00
    Text: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G00 353/SC V = Device Code

    PC 74 HCT 32 P

    Abstract: U-046 V = Device Code
    Text: MC74VHC1G01 2-Input NAND Gate with Open Drain Output The MC74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low


    Original     		PDF MC74VHC1G01 PC 74 HCT 32 P U-046 V = Device Code

    marking H5 sot 23-5

    Abstract: vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code
    Text: MC74VHC1G132 2-Input NAND Schmitt-Trigger The MC74VHC1G132 is a single gate CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G132 marking H5 sot 23-5 vsop8 package outline sot 23-5 marking code H5 date code marking toshiba Nand Wafer Fab Plant Codes ST "package marking code" 162 marking code vt SOT 23-5 sot 23-5 marking code 162 soic 8 marking code V = Device Code

    74VHC1GT14

    Abstract: ON Semiconductor marking marking h2 SOT353 SOT-353 MARKING VL marking SBN SOT23 MARKING CODE T14 SOT23 diode marking L5 sot363 marking code V6 diode marking code v6 SOT23 H2 sc88a
    Text: MC74VHC1GT14 Schmitt-Trigger Inverter / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT14 is a single gate CMOS Schmitt–trigger inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while


    Original     		PDF MC74VHC1GT14 74VHC1GT14 ON Semiconductor marking marking h2 SOT353 SOT-353 MARKING VL marking SBN SOT23 MARKING CODE T14 SOT23 diode marking L5 sot363 marking code V6 diode marking code v6 SOT23 H2 sc88a

    V = Device Code

    Abstract: ALPHA NEW sot YEAR DATE CODE sot 23-5 marking code H5 marking H5 sot 23-5 MC74VHC1G135
    Text: MC74VHC1G135 2-Input NAND Schmitt-Trigger with Open Drain Output The MC74VHC1G135 is a single gate CMOS Schmitt NAND trigger with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		PDF MC74VHC1G135 V = Device Code ALPHA NEW sot YEAR DATE CODE sot 23-5 marking code H5 marking H5 sot 23-5

    V = Device Code

    Abstract: diode Marking code v3 ALPHA NEW sot YEAR DATE CODE 051 MPC AND8004
    Text: MC74VHC1G05 Advance Information Inverter with Open Drain Output The MC74VHC1G05 is an advanced high speed CMOS inverter with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky


    Original     		PDF MC74VHC1G05 V = Device Code diode Marking code v3 ALPHA NEW sot YEAR DATE CODE 051 MPC AND8004

    t08 sot-23

    Abstract: ON Semiconductor marking V = Device Code marking L5 sot363 vk sot-363 marking codes fairchild 61 vk sot-353 on alpha year and work week SOT-353 MARKING w5 diode Marking code v3
    Text: MC74VHC1GT08 2-Input AND Gate/CMOS Logic Level Shifter The MC74VHC1GT08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining


    Original     		PDF MC74VHC1GT08 t08 sot-23 ON Semiconductor marking V = Device Code marking L5 sot363 vk sot-363 marking codes fairchild 61 vk sot-353 on alpha year and work week SOT-353 MARKING w5 diode Marking code v3

    SOT23 "Marking Code" t04

    Abstract: marking L5 sot363 marking h2 SOT353 ON Semiconductor marking V = Device Code sot363 marking code ca marking 62 ON Semi 34 sot363 t04 sot 23 marking code V6 diode
    Text: MC74VHC1GT04 Inverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT04 is a single gate inverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		PDF MC74VHC1GT04 SOT23 "Marking Code" t04 marking L5 sot363 marking h2 SOT353 ON Semiconductor marking V = Device Code sot363 marking code ca marking 62 ON Semi 34 sot363 t04 sot 23 marking code V6 diode

    marking CODE W2D

    Abstract: marking w2d
    Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		PDF MC74VHC1G126 353/SC marking CODE W2D marking w2d

    FOOTPRINT MELF

    Abstract: melf Schottky glass BKC Semiconductors
    Text: SD103AW thru SD103CW SOD-123 PLASTIC Applications SMD Schottky Diodes Guard ring protected schottky barrier. High current / low forward drop. Low cost intermediate alternative to 1 amp devices. Excellent protection for MOS devices. Used in small fast motor applications such as CD ROMs


    OCR Scan     		PDF OD-123 SD103AW SD103CW DO-35 200mA 200mA, SD103BW SD103CW FOOTPRINT MELF melf Schottky glass BKC Semiconductors