B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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Original
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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PDF
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C2373
Abstract: Q62702-C2373 H12E MARKING CODE 5B1 6c2 transistor 3cs transistor
Text: BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code
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Original
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Q62702-C2373
OT-363
May-12-1998
C2373
Q62702-C2373
H12E
MARKING CODE 5B1
6c2 transistor
3cs transistor
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PDF
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5b1 transistor
Abstract: transistor 5B1 H12E
Text: BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration
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Original
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OT-363
Q62702-2373
Jan-20-1997
5b1 transistor
transistor 5B1
H12E
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PDF
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transistor marking 6c1
Abstract: transistor marking E2 3Ds SOT363
Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see
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Original
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BC856S/U
BC857S
BC856S
BC857S:
EHA07175
BC856U
transistor marking 6c1
transistor marking E2
3Ds SOT363
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PDF
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sot363 marking DATE code
Abstract: marking AF BC856S BC856U BC857S BC857U SC74 marking B1 sot363 marking 3cs 3Ds SOT363
Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see
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Original
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BC856S/U
BC857S
BC856S
BC857S:
BC856S/U
EHA07175
BC856S
OT363
BC856U
sot363 marking DATE code
marking AF
BC856U
BC857S
BC857U
SC74
marking B1 sot363
marking 3cs
3Ds SOT363
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PDF
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transistor marking 6c1
Abstract: No abstract text available
Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see
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Original
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BC856S/U
BC857S
BC856S
BC857S:
EHA07175
BC856U
transistor marking 6c1
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PDF
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Untitled
Abstract: No abstract text available
Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see
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Original
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BC856S/U
BC857S
BC856S
BC857S:
BC856S/U
EHA07175
BC856S
OT363
BC856U
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PDF
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Untitled
Abstract: No abstract text available
Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see
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Original
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BC856S/U
BC857S
BC856S
BC857S:
EHA07175
BC856U
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PDF
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transistor BC 339
Abstract: TRANSISTOR BC 629 339 marking code transistor PG-SOT363-6-1 MA000849564
Text: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see
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Original
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BC856S/U
BC857S
BC856S
BC857S:
EHA07175
BC856U
transistor BC 339
TRANSISTOR BC 629
339 marking code transistor
PG-SOT363-6-1
MA000849564
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PDF
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Transistor S8550 2TY
Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250
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Original
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OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
B5817W
B5818W
Transistor S8550 2TY
Schottky barrier sot-23 Marking s4
sk 8050s
KL4 SOT-23
d882 to-92
BR S8050
bq d882
transistor D882 datasheet
S8050 equivalent
PCR100-6
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PDF
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Y2 transistor
Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123
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Original
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huaxing20
OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
Y2 transistor
Transistor S8550 2TY
bq d882
transistor bc547 bk 045
transistor D882 datasheet
Z1 Transistor
TRANSISTOR MARK AQY
S8050 equivalent
K596-B
sot 89 D882
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PDF
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Untitled
Abstract: No abstract text available
Text: Tel : Fax : email : 0044 0 118 979 1238 0044 (0)118 979 1283 [email protected] ACT3CSV-4 VCXO The ACT3CSV-4 is a family of 4-pad miniature surface mount Voltage Controlled Crystal Oscillators (VCXO) housed in a 3.2 X 2.5mm ceramic package with a metal lid. Only 1.0mm
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Original
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V364-1036C
-C1501-PF)
ISO9001
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PDF
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MARKING 3cs
Abstract: No abstract text available
Text: BC857S PNP Silicon AF Transistor Array 4 For AF input stages and driver applications 5 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2
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Original
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BC857S
VPS05604
EHA07175
OT363
MARKING 3cs
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PDF
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marking 3cs
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC857S Multi-Chip TRANSISTOR PNP SOT-363 FEATURES Power dissipation PCM : 300 mW(Tamb=25℃) Collector current ICM : -200 mA Collector-base voltage V(BR)CBO : -50
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Original
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OT-363
BC857S
OT-363
-10mA
-100mA
-10mA
100MHz
200Hz
marking 3cs
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PDF
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XD 105 94V-0
Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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Original
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vse-db0002-1102
XD 105 94V-0
BFM 41A
Zener diode smd marking code 39c
transistor 1BW
GENERAL SEMICONDUCTOR TVS
CJ 53B 30 097
transistor 110 3CG
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PDF
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BC857S
Abstract: VPS05604
Text: BC857S PNP Silicon AF Transistor Array 4 For AF input stages and driver applications 5 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2
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Original
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BC857S
VPS05604
EHA07175
OT363
Peak30V
EHP00381
EHP00380
Nov-29-2001
BC857S
VPS05604
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PDF
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BC857S
Abstract: VPS05604
Text: BC857S PNP Silicon AF Transistor Array 4 For AF input stages and driver applications 5 6 High current gain Low collector-emitter saturation voltage Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2
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Original
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BC857S
VPS05604
EHA07175
OT363
EHP00381
EHP00380
Aug-20-2001
EHP00382
BC857S
VPS05604
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PDF
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VPS05604
Abstract: No abstract text available
Text: BC 857S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604
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Original
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VPS05604
EHA07175
OT-363
EHP00381
EHP00380
Nov-08-1999
EHP00382
EHP00379
VPS05604
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PDF
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transistors BC 543
Abstract: TRANSISTOR BC 748 transistor BC 543
Text: SIEMENS BC 857S PNP Silicon A F Transistor Array • For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage •Two galvanic internal isolated Transistors in one package 3Cs lil Lit L±J Pin Configuration
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OCR Scan
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Q62702-2373
OT-363
fiS35bD5
235LD5
BC857S
0535bD5
012Dbl3
transistors BC 543
TRANSISTOR BC 748
transistor BC 543
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PDF
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ADS586
Abstract: No abstract text available
Text: 8 MAW IMO HADE IN THIRD ANGLE PROJECTION THIS ORAWING IS UNPUBLISHED. RELEASCO POR PUBLICATION .19 OOPVftftHT I« 0V AMP IHOOOOHAT«. AU. /NtlNNArfOMAC HUNTS KSKMC. oisr LOG AD 25 £ REVISIONS oescoirrioN 20NE tw* dare APPO DRAWN S 54.36C2.140J MAX 49.3 5 ± 0 . 1 [1. 943±. 0 0 4 J
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OCR Scan
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ADS586;
AS5640
AD5876
A05871
A06256
7770S-360Q
ADS586
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PDF
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3cs transistor
Abstract: marking 3cs 6c2 transistor PS056
Text: SIEMENS BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications A • High current gain 5_ O ^ • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package
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OCR Scan
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PS05604
Q62702-C2373
OT-363
Mav-12-1998
3cs transistor
marking 3cs
6c2 transistor
PS056
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PDF
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marking Ht SOT-363
Abstract: 3h250 FT12E 3cs transistor
Text: SIEMENS BC 857S PNP Silicon AF Transistor Array >For AF input stages and driver applications 1High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package ^ F I H "•> <>« i- n - i u Ordering Code
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OCR Scan
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Q62702-C2373
OT-363
marking Ht SOT-363
3h250
FT12E
3cs transistor
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PDF
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AS5640
Abstract: No abstract text available
Text: 8 MAW IMO HADE IN THIRD ANGLE PROJECTION THIS ORAWING IS UNPUBLISHED. RELEASCO POR PUBLICATION .19 OOPVftftHT I« 0V AMP IHOOOOHAT«. AU. /NtlNNArfOMAC HUNTS KSKMC. oisr LOG AD 25 £ REVISIONS oescoirrioN 20NE tw* dare APPO DRAWN S 54.36C2.140J MAX 49.3 5 ± 0 . 1 [1. 943±. 0 0 4 J
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OCR Scan
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650477-S
7705-360Q
AS5640
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PDF
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2SK146
Abstract: No abstract text available
Text: Ordering num ber: EN4892 _ FX852 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC/DC Converter Applications Features • Composite type composed of a low ON-resistance N-channel MOSFET for ultrahigh-speed switching and Iow-voltage driving and a fast-recovery, low forward-voltage Schottky barrier diode. Facilitates
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OCR Scan
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EN4892
FX852
FX852
2SK1467
SB07-03P,
2SK146
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PDF
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