Untitled
Abstract: No abstract text available
Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 30 mΩ @ VGS = 1.8V Very Low Gate Threshold Voltage
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Original
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DMN3115UDM
AEC-Q101
OT-26
J-STD-020C
DS31187
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PDF
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marking 3N1
Abstract: DMN3115UDM
Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V
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Original
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DMN3115UDM
AEC-Q101
OT-26
J-STD-020C
DS31187
marking 3N1
DMN3115UDM
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PDF
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DMN3115UDM
Abstract: No abstract text available
Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance
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Original
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DMN3115UDM
AEC-Q101
OT-26
J-STD-020
MIL-STD-202,
DS31187
DMN3115UDM
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PDF
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marking 3N1
Abstract: DMN3115UDM
Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.8V Very Low Gate Threshold Voltage Low Input Capacitance
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Original
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DMN3115UDM
AEC-Q101
OT-26
J-STD-020
MIL-STD-202,
DS31187
marking 3N1
DMN3115UDM
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PDF
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zener 2B1
Abstract: marking code ZENER zener 4a1 5c1 zener diode marking code 5b1 zener 5c1 marking 3t1 zener 5A1 STZ8039 5B1 zener diode
Text: STZ8000 Series SILICON PLANAR ZENER DIODES For stabilization of power supply application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 1 2 Top view Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Power Dissipation
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Original
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STZ8000
OD-323
STZ8390C
OD-323
zener 2B1
marking code ZENER
zener 4a1
5c1 zener diode
marking code 5b1
zener 5c1
marking 3t1
zener 5A1
STZ8039
5B1 zener diode
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PDF
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zener 2B1
Abstract: marking code ZENER 5c1 zener diode 5B1 zener diode marking 3t1 planar transistor 5B1 zener 5c1 3A1 zener diode marking code 5b1 STZ8000
Text: STZ8000 Series SILICON PLANAR ZENER DIODES For stabilization of power supply application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 1 2 Top view Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Power Dissipation
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Original
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STZ8000
OD-323
OD-323
zener 2B1
marking code ZENER
5c1 zener diode
5B1 zener diode
marking 3t1
planar transistor 5B1
zener 5c1
3A1 zener diode
marking code 5b1
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PDF
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zener 2B1
Abstract: 5c1 zener diode 3A1 zener diode 3A1 Zener zener 5A1 marking code 5b1 zener 4a1 zener 4c1 marking code ZENER marking 3t1
Text: STZ8000 Series SILICON PLANAR ZENER DIODES For stabilization of power supply application PINNING PIN DESCRIPTION 1 Cathode 2 Anode 1 2 Top view Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Power Dissipation
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Original
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STZ8000
OD-323
STZ8390C
OD-323
zener 2B1
5c1 zener diode
3A1 zener diode
3A1 Zener
zener 5A1
marking code 5b1
zener 4a1
zener 4c1
marking code ZENER
marking 3t1
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PDF
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Untitled
Abstract: No abstract text available
Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate
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Original
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DMN3115UDM
AEC-Q101
J-STD-020
MIL-STD-202,
DS31187
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PDF
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Untitled
Abstract: No abstract text available
Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance • 60 mΩ @ VGS = 4.5V • 80 mΩ @ VGS = 2.5V • 130 mΩ @ VGS = 1.5V Very Low Gate Threshold Voltage Low Input Capacitance ESD Protected Gate
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Original
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DMN3115UDM
AEC-Q101
J-STD-020
DS31187
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PDF
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Untitled
Abstract: No abstract text available
Text: DMN3115UDM N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max 30V 60mΩ @ VGS = 4.5V 80mΩ @ VGS = 2.5V 130mΩ @ VGS = 1.5V • ID TA = +25°C 3.2A 2.7A 2.1A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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DMN3115UDM
AEC-Q101
DS31187
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PDF
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Untitled
Abstract: No abstract text available
Text: TCR2EF series, TCR2EE series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2EF series TCR2EE series 200 mA CMOS Low Drop-Out Regulator with Fast Load Transient Response The TCR2EF and TCR2EF series are CMOS single-output voltage regulators with an on/off control input, featuring low dropout voltage,
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Original
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PDF
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Untitled
Abstract: No abstract text available
Text: TCR2EF series, TCR2EE series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2EF series TCR2EE series 200 mA CMOS Low Drop-Out Regulator with Fast Load Transient Response The TCR2EF and TCR2EE series are CMOS single-output voltage regulators with an on/off control input, featuring low dropout voltage,
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Original
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PDF
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TCR2EE48
Abstract: No abstract text available
Text: TCR2EF series, TCR2EE series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2EF series TCR2EE series 200 mA CMOS Low Drop-Out Regulator with Fast Load Transient Response The TCR2EF and TCR2EE series are CMOS single-output voltage regulators with an on/off control input, featuring low dropout voltage,
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Original
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PDF
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3N10L
Abstract: 3N10L12 PG-TO263-3-2 3N10L1
Text: Target Data Sheet IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 100 V R DS on ,max (SMD version) 12 mΩ ID 70 A • MSL1 up to 260°C peak reflow
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Original
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IPB70N10S3L-12
IPI70N10S3L-12,
IPP70N10S3L-12
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
IPB70N10S3L-12
IPI70N10S3L-12
PG-TO263-3-2
3N10L
3N10L12
3N10L1
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PDF
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IPD30N10S3L
Abstract: IPD30N10 IPD30N10S3 3N10L34 IPD30N10S3L-34 GD25Q 3N10L PG-TO252-3-11
Text: IPD30N10S3L-34 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 31 mΩ ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
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Original
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IPD30N10S3L-34
PG-TO252-3-11
3N10L34
IPD30N10S3L
IPD30N10
IPD30N10S3
3N10L34
IPD30N10S3L-34
GD25Q
3N10L
PG-TO252-3-11
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PDF
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3N10L34
Abstract: No abstract text available
Text: IPD30N10S3L-34 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 31 mW ID 30 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)
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Original
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IPD30N10S3L-34
PG-TO252-3-11
3N10L34
3N10L34
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PDF
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3N10L34
Abstract: IPD30N10S3L-34
Text: IPD30N10S3L-34 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 31 mΩ ID 30 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
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Original
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IPD30N10S3L-34
PG-TO252-3-11
PG-TO252-3-11
3N10L34
3N10L34
IPD30N10S3L-34
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PDF
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3N10L26
Abstract: No abstract text available
Text: IPD35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 26 mW ID 35 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)
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Original
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IPD35N10S3L-26
PG-TO252-3-11
PG-TO252-3-11
3N10L26
3N10L26
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PDF
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3N10L26
Abstract: IPB35N10S3L-26 3N10L IPB35N ipb35n10s3l IPB35N10
Text: IPB35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 26.3 mW ID 35 A Features PG-TO263-3-2 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
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Original
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IPB35N10S3L-26
PG-TO263-3-2
PG-TO263-3-2
3N10L26
3N10L26
IPB35N10S3L-26
3N10L
IPB35N
ipb35n10s3l
IPB35N10
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PDF
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3N10L26
Abstract: IPD35N10S3L-26 3N10L PG-TO252-3-11 d35a
Text: IPD35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 26 mΩ ID 35 A Features PG-TO252-3-11 • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature
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Original
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IPD35N10S3L-26
PG-TO252-3-11
3N10L26
3N10L26
IPD35N10S3L-26
3N10L
PG-TO252-3-11
d35a
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PDF
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3N10L26
Abstract: D35A IPD35N10S3L-26
Text: IPD35N10S3L-26 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max 26 mW ID 35 A Features • N-channel - Enhancement mode PG-TO252-3-11 • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)
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Original
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IPD35N10S3L-26
PG-TO252-3-11
3N10L26
3N10L26
D35A
IPD35N10S3L-26
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PDF
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SMD-2520
Abstract: 3N10L smd diode 104
Text: IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 12 mW ID 70 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • Automotive AEC Q101 qualified
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Original
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IPB70N10S3L-12
IPI70N10S3L-12,
IPP70N10S3L-12
PG-TO262-3-1
PG-TO263-3-2
PG-TO220-3-1
IPI70N10S3L-12
SMD-2520
3N10L
smd diode 104
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PDF
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3n1012
Abstract: IPB70N10S3-12 IPI70N10S3-12 IPP70N10S3-12 PG-TO263-3-2
Text: IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 OptiMOS -T Power-Transistor Product Summary V DS 100 V R DS on ,max (SMD version) 11.3 mΩ ID Features PG-TO263-3-2 • N-channel - Enhancement mode 70 PG-TO262-3-1 A PG-TO220-3-1 • Automotive AEC Q101 qualified
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Original
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IPB70N10S3-12
IPI70N10S3-12,
IPP70N10S3-12
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
3N1012
IPI70N10S3-12
3n1012
IPB70N10S3-12
IPI70N10S3-12
IPP70N10S3-12
PG-TO263-3-2
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PDF
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3N74
Abstract: TRANSISTOR MARKING A53 3N75 transistor 3N74 Z933 3N7A-76 3N127 3N76 3N75 JAN 3K76
Text: MIL-S-19500/390 USAF 22 January 1968 WTT TTA D V CDIfrTt'Tf'iTTnW SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, DOUBLE-EMITTER TYPES 3N74, TX3N7A, 3N75, TX3N75, 3N76, TX3N76, 3N127, TX3N127 1. SCOPE •*-•1 Scope. This specification covers the detail requirements for a doubleemitter, NPNj silicon tetrode transistor designed primarily for low-power chopper
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OCR Scan
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MIL-S-19500/390
TX3N75,
TX3N76,
3N127,
TX3N127
3N74-76
3N127
3N127
3N74
TRANSISTOR MARKING A53
3N75
transistor 3N74
Z933
3N7A-76
3N76
3N75 JAN
3K76
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PDF
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