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    MARKING 4 INFINEON Search Results

    MARKING 4 INFINEON Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING 4 INFINEON Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    barcode label infineon

    Abstract: SOT89 marking GA label infineon barcode SOT89 MARKING CODE 43 sot143 Marking code 53 marking code 51 sot 363
    Text: GaAs Components Package Information 5 Package Information Discrete and RF Semiconductors Packages Marking Layout SOT-143, MW-4, SCT-595, SCT-598 EH S 46 Manufacturer Date code Year/Month Type code EH S 46 Example 1994, June BCW 66 H Marking Layout SC-75, SOT-343, SOT-363, P-TSFP-4


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    PDF OT-143, SCT-595, SCT-598 SC-75, OT-343, OT-363, OT-223, MW-12 OT-89 MW-12 barcode label infineon SOT89 marking GA label infineon barcode SOT89 MARKING CODE 43 sot143 Marking code 53 marking code 51 sot 363

    PEF24624

    Abstract: pef22624 B78421P1853A005 marking CODE n3 marking code rdc marking n3 SOCRATES Y787
    Text: EP13 Interfacetransformer Socrates chipset 29.07.2004 Preliminary Datasheet Ordering Code: Matching IC Y787/51/02 B78421P1853A005 Infineon PEF24624, PEF22624 Dimensions [mm]: Schematics: 5 7 N1 LineSide 2 4 ChipSide N3 N2 1 9 Marking: EPCOS middle block date code


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    PDF Y787/51/02 B78421P1853A005 PEF24624, PEF22624 PEF24624 pef22624 B78421P1853A005 marking CODE n3 marking code rdc marking n3 SOCRATES Y787

    B78381A1134A003

    Abstract: FIN0198-X FIN0199-F FIN0231-J-E PEB2095 PEB20950
    Text: ISDN Transformers RM 4 LP B78381A1134A003 UPN Interface 8,1 max. Application • Use in TE and PBX ■ Matched to Infineon ICs, e.g. PEB/PSB 2095 and 20950 13,8 max. Marking ■ Manufacturer, middle block of 4 5 Packing ■ 24-mm blister tape ■ Packing unit: 300 pcs.


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    PDF B78381A1134A003 24-mm FIN0198-X 04-01\UPN-ISDN FIN0199-F FIN0231-J-E B78381A1134A003 FIN0198-X FIN0199-F FIN0231-J-E PEB2095 PEB20950

    PEF 22624

    Abstract: PEF 24624 pef 24624 infineon pef* 22624 SOCRATES B78421A1852A003 socrates PEF 22624 INFINEON marking pef 22624 marking CODE n3
    Text: EP13 Interfacetransformer Socrates Bis familie 18.06.2004 Preliminary Datasheet Ordering Code: Matching IC Y786/51/01 B78421A1852A003 Infineon Socrates PEF 22624, PEF 24624, PEF 24625 Dimensions [mm]: Schematics: 5 7 N1 LineSide 2 4 ChipSide N3 N2 1 9 Marking:


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    PDF Y786/51/01 B78421A1852A003 PEF 22624 PEF 24624 pef 24624 infineon pef* 22624 SOCRATES B78421A1852A003 socrates PEF 22624 INFINEON marking pef 22624 marking CODE n3

    Untitled

    Abstract: No abstract text available
    Text: PZTA42 NPN Silicon High-Voltage Transistors • High breakdown voltage • Low collector-emitter saturation voltage 4 3 2 • Complementary type: PZTA92 PNP Type PZTA42 Marking PZTA42 1=B 1 Pin Configuration 2=C 3=E 4=C - Package - SOT223 Maximum Ratings


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    PDF PZTA42 PZTA92 PZTA42 OT223

    BSP50

    Abstract: BSP51 BSP52 BSP60 BSP50-BSP52
    Text: BSP50-BSP52 NPN Silicon Darlington Transistors • High collector current • Low collector-emitter saturation voltage 4 3 2 • Complementary types: BSP60 - BSP52 PNP 1 Type Marking Pin Configuration Package BSP50 BSP50 1=B 2=C 3=E 4=C - - SOT223 BSP51


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    PDF BSP50-BSP52 BSP60 BSP52 BSP50 OT223 BSP51 BSP50 BSP51 BSP52 BSP50-BSP52

    PZTA92

    Abstract: BCP52-16 E6327 PZTA42 VPS05163 PZTA92 E6433
    Text: PZTA92 PNP Silicon High Voltage Transistor  High breakdown voltage 4  Low collector-emitter saturation voltage  Complementary type: PZTA42 NPN 3 2 1 Type Marking PZTA92 PZTA 92 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings


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    PDF PZTA92 PZTA42 VPS05163 OT223 PZTA92 BCP52-16 E6327 PZTA42 VPS05163 PZTA92 E6433

    Untitled

    Abstract: No abstract text available
    Text: PZTA92 PNP Silicon High Voltage Transistor  High breakdown voltage 4  Low collector-emitter saturation voltage  Complementary type: PZTA42 NPN 3 2 1 Type Marking PZTA92 PZTA 92 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings


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    PDF PZTA92 PZTA42 VPS05163 OT223 Dec-12-cal

    Untitled

    Abstract: No abstract text available
    Text: PZTA42 NPN Silicon High Voltage Transistor  High breakdown voltage 4  Low collector-emitter saturation voltage  Complementary type: PZTA92 PNP 3 2 1 Type Marking PZTA42 PZTA 42 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings


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    PDF PZTA42 PZTA92 VPS05163 OT223 Jun-29-cal

    PZTA92 E6433

    Abstract: No abstract text available
    Text: PZTA42 NPN Silicon High Voltage Transistor  High breakdown voltage 4  Low collector-emitter saturation voltage  Complementary type: PZTA92 PNP 3 2 1 Type Marking PZTA42 PZTA 42 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings


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    PDF PZTA42 PZTA92 VPS05163 OT223 Jun-29-cal PZTA92 E6433

    sot143 Marking code 53

    Abstract: No abstract text available
    Text: BF772 NPN Silicon RF Transistor 3  For application in TV-sat tuners 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF772 RAs Pin Configuration 1=C 2=E 3=B Package 4=E SOT143 Maximum Ratings Parameter


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    PDF BF772 VPS05178 OT143 sot143 Marking code 53

    Untitled

    Abstract: No abstract text available
    Text: BGX50A. Silicon Switching Diode Array  Bridge configuration  High-speed switching diode chip BGX50A 4 3 D 3 D 4 D 2 D 1 1 2 Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter


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    PDF BGX50A. BGX50A OT143 Feb-03-2003

    sot143 marking code u1s

    Abstract: BFP181 BGX50A E6327
    Text: BGX50A. Silicon Switching Diode Array  Bridge configuration  High-speed switching diode chip BGX50A 4 3 D 3 D 4 D 2 D 1 1 2 Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter


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    PDF BGX50A. BGX50A OT143 sot143 marking code u1s BFP181 BGX50A E6327

    Untitled

    Abstract: No abstract text available
    Text: BF772 NPN Silicon RF Transistor 3  For application in TV-sat tuners 4 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF772 RAs Pin Configuration 1=C 2=E 3=B Package 4=E SOT143 Maximum Ratings Parameter


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    PDF BF772 VPS05178 OT143

    Untitled

    Abstract: No abstract text available
    Text: SMBTA56M PNP Silicon AF Transistor 4  High breakdown voltage  Low collector-emitter saturation voltage 5  Complementary type: SMBTA06M NPN 3 2 1 VPW05980 Type Marking SMBTA56M s2G Pin Configuration 1=B 2=C 3=E Package 4 n.c. 5 = C SCT595 Maximum Ratings


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    PDF SMBTA56M SMBTA06M VPW05980 SCT595

    Untitled

    Abstract: No abstract text available
    Text: BSP60 . BSP62 PNP Silicon Darlington Transistors  High collector current 4  Low collector-emitter saturation voltage  Complementary types: BSP50 . BSP52 NPN 3 2 1 Type Marking Pin Configuration BSP60 BSP 60 1=B 2=C 3=E 4=C SOT223 BSP61 BSP 61 1=B


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    PDF BSP60 BSP62 BSP50 BSP52 VPS05163 BSP60 BSP61 BSP62 OT223

    Untitled

    Abstract: No abstract text available
    Text: BSP50 . BSP52 NPN Silicon Darlington Transistors  High collector current 4  Low collector-emitter saturation voltage  Complementary types: BSP60 . BSP62 PNP 3 2 1 Type Marking Pin Configuration BSP50 BSP 50 1=B 2=C 3=E 4=C SOT223 BSP51 BSP 51 1=B


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    PDF BSP50 BSP52 BSP60 BSP62 VPS05163 BSP50 BSP51 BSP52 OT223

    BCP95

    Abstract: bcp9
    Text: BDP954 PNP Silicon AF PowerTransistor • For AF driver and output stages • High current gain 4 3 2 • Low collector-emitter saturation voltage 1 • Complementary type: BDP953 NPN Type BDP954 Marking BCP954 1=B Pin Configuration 2=C 3=E 4=C - Package


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    PDF BDP954 BDP953 BCP954 OT223 BCP95 bcp9

    BSP 450

    Abstract: No abstract text available
    Text: BSP60 . BSP62 PNP Silicon Darlington Transistors  High collector current 4  Low collector-emitter saturation voltage  Complementary types: BSP50 . BSP52 NPN 3 2 1 Type Marking Pin Configuration BSP60 BSP 60 1=B 2=C 3=E 4=C SOT223 BSP61 BSP 61 1=B


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    PDF BSP60 BSP62 BSP50 BSP52 VPS05163 BSP60 BSP61 BSP62 OT223 BSP 450

    Untitled

    Abstract: No abstract text available
    Text: PZTA14 NPN Silicon Darlington Transistors • For general AF applications 4 • High collector current • High current gain 3 2 1 Type Marking PZTA14 PZTA 14 Pin Configuration 1=B 2=C 3=E VPS05163 Package 4=C SOT223 Maximum Ratings Parameter Symbol Collector-emitter voltage


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    PDF PZTA14 VPS05163 OT223

    Untitled

    Abstract: No abstract text available
    Text: SMBTA06UPN NPN / PNP Silicon AF Transistor Array • High breakdown voltage • Low collector-emitter saturation voltage 4 3 5 • Two galvanic internal isolated NPN/PNP 2 6 1 Transistor in one package Tape loading orientation Top View 6 5 4 Marking on SC74 package


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    PDF SMBTA06UPN EHA07177

    Untitled

    Abstract: No abstract text available
    Text: BSP50 . BSP52 NPN Silicon Darlington Transistors  High collector current 4  Low collector-emitter saturation voltage  Complementary types: BSP60 . BSP62 PNP 3 2 1 Type Marking Pin Configuration BSP50 BSP 50 1=B 2=C 3=E 4=C SOT223 BSP51 BSP 51 1=B


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    PDF BSP50 BSP52 BSP60 BSP62 VPS05163 BSP50 BSP51 BSP52 OT223

    Elpida LPDDR2 Memory

    Abstract: MT46H32M32LF MT46H64M16LF
    Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 Banks MT46H32M32LF – 8 Meg x 32 x 4 Banks Features Options Marking • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks


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    PDF MT46H64M16LF MT46H32M32LF 09005aef82ce3074 Elpida LPDDR2 Memory MT46H32M32LF MT46H64M16LF

    ELPIDA mobile dram LPDDR2

    Abstract: LPDDR2 SDRAM micron infineon power cycling
    Text: 256Mb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H16M16LF – 4 Meg x 16 x 4 Banks MT46H8M32LF – 2 Meg x 32 x 4 Banks Features Marking Options • VDD/VDDQ – 1.8V/1.8V • Configuration – 16 Meg x 16 4 Meg x 16 x 4 banks – 8 Meg x 32 (2 Meg x 32 x 4


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    PDF 256Mb: MT46H16M16LF MT46H8M32LF 09005aef834bf85b ELPIDA mobile dram LPDDR2 LPDDR2 SDRAM micron infineon power cycling