Schottky Diode 20V 5A
Abstract: Bi-Directional P-Channel mosfet IR P-Channel mosfet SPC6801 SPC6801ST6RG P-Channel MOSFET code 1A
Text: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect
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SPC6801
SPC6801combines
-30V/-2
105ise
Schottky Diode 20V 5A
Bi-Directional P-Channel mosfet
IR P-Channel mosfet
SPC6801
SPC6801ST6RG
P-Channel MOSFET code 1A
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P-Channel MOSFET code 1A
Abstract: P-channel Trench MOSFET Bi-Directional P-Channel mosfet SPC6801 SPC6801ST6RG 6P marking P-channel MOSFET VGS -25V
Text: SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect
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SPC6801
SPC6801combines
-30V/-2
105ise
P-Channel MOSFET code 1A
P-channel Trench MOSFET
Bi-Directional P-Channel mosfet
SPC6801
SPC6801ST6RG
6P marking
P-channel MOSFET VGS -25V
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L640ML12P
Abstract: 64 fortified bga ei 306 20 64
Text: ADVANCE INFORMATION Am29LV640MH/L 64 Megabit 4 M x 16-Bit/8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 V for read, erase, and program operations
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Am29LV640MH/L
16-Bit/8
128-word/256-byte
8-word/16-byte
TS056
TSR056
L640ML12P
64 fortified bga
ei 306 20 64
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S24C MARK
Abstract: tsop 3602 9020 8-pin SOP SIP 400B nec 1251 P100G thomson 462 t P5VP-340B3-2 J 80222 P28D-100-600A1-1
Text: Packages Plastic DIP Dual In-line Package Units in mm 8-pin plastic DIP (300mil) 8 5 1 4 14-pin plastic DIP with TAB (300mil) 14 8 1 7 20.32 MAX. 7.62 10.16 MAX. 24.60 MAX. 7.62 4.31 MAX. 6.4 0.9 MIN. 6.4 5.08 MAX. 5.08 MAX. 4.31 MAX. 2.54 0.51 MIN. 2.54
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300mil)
14-pin
P8C-100-300B,
P14CT-100-300B-1
X10679EJCV0SG00
S24C MARK
tsop 3602
9020 8-pin SOP
SIP 400B
nec 1251
P100G
thomson 462 t
P5VP-340B3-2
J 80222
P28D-100-600A1-1
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tsop 66
Abstract: MICRON 63 micron ddr TSOP RECEIVER general architecture of ddr sdram TSOP 66 Package MT46LC8M8TG-10 sdram pins detail
Text: ADVANCE 64 MEG: x8 DDR SDRAM MT46LC8M8 - 2 Meg x 8 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Internal, pipelined double data rate DDR architecture; two data accesses per clock cycle
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MT46LC8M8
tsop 66
MICRON 63
micron ddr
TSOP RECEIVER
general architecture of ddr sdram
TSOP 66 Package
MT46LC8M8TG-10
sdram pins detail
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63-Ball
Abstract: fbe063-63-ball ei 306 20 64
Text: ADVANCE INFORMATION Am29LV640M 64 Megabit 4 M x 16-Bit or 4 M x 16-Bit/8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation
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Am29LV640M
16-Bit
16-Bit/8
128-word/256-byte
8-word/16-byte
63-ball
TS056
LAA064
fbe063-63-ball
ei 306 20 64
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MR26T51203L
Abstract: OKI date code MR26T51203L-XXXMB
Text: PEDR26T51203L-02-03 OKI Semiconductor MR26T51203L 32M–Word x 16–Bit or 64M–Word × 8–Bit Issue Date: Jun. 17, 2003 Preliminary P2ROM FEATURES • 33,554,432-word × 16-bit/67,108,864-word × 8-bit electrically switchable configuration · 2.7 V to 3.6 V power supply
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PEDR26T51203L-02-03
MR26T51203L
432-word
16-bit/67
864-word
MR26T51203L-xxxTM
50-pin
50-P-400-0
MR26T51203L-xxxMB
70-pin
MR26T51203L
OKI date code
MR26T51203L-XXXMB
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30V 20A power p MOSFET
Abstract: Transistor Mosfet N-Ch 30V SPC6602 SPC6602ST6RG
Text: SPC6602 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6602 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state
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SPC6602
SPC6602
30V 20A power p MOSFET
Transistor Mosfet N-Ch 30V
SPC6602ST6RG
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IDT package marking
Abstract: IDT marking IDT marking TQFP IDT TOP SIDE package marking A-0410-02 IDT CODE DATE marking MQUAD pbga 144 TQFP 132 PACKAGE PDIP-48
Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: A-0410-02 Product Affected: Date Effective: Contact: Title: Phone #: Fax #: E-mail: 10/5/2004 DATE: All IDT Products (see attached list)
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SPC6604ST6RGB
Abstract: SPC6604 SPC6604ST6RG
Text: SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state
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SPC6604
SPC6604
SPC6604ST6RGB
SPC6604ST6RG
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SPC6602ST6RG
Abstract: SPC6602 N and P MOSFET
Text: SPC6602 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6602 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state
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SPC6602
SPC6602
SPC6602ST6RG
N and P MOSFET
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SPC6604
Abstract: SPC6604ST6RG N and P MOSFET
Text: SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state
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SPC6604
SPC6604
SPC6604ST6RG
N and P MOSFET
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SPC6601
Abstract: SPC6601ST6RG 6P marking TSOP 6 marking 52 N and P MOSFET
Text: SPC6601 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6601 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state
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SPC6601
SPC6601
SPC6601ST6RG
6P marking
TSOP 6 marking 52
N and P MOSFET
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TOP SIDE MARKING OF MICRON
Abstract: ba0 marking
Text: ADVANCE 64Mb: x4, x8, x16 DDR SDRAM MT46V16M4 - 4 Meg x 4 x 4 banks MT46V8M8 - 2 Meg x 8 x 4 banks MT46V4M16 - 1 Meg x 16 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html
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64Mx4x8x16DDRSDRAM
TOP SIDE MARKING OF MICRON
ba0 marking
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Untitled
Abstract: No abstract text available
Text: UG42S6428GSG-PL Data sheets can be downloaded at www.unigen.com 16M Bytes 2M x 64 bits SYNCHRONOUS DRAM MODULE PC100 SDRAM Unbuffered SODIMM based on 8 pcs 2M x 8 SDRAM with LVTTL, 2 banks & 2K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 144-Pin SODIMM
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UG42S6428GSG-PL
PC100
UG42S6428GSG-PL
144-Pin
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Untitled
Abstract: No abstract text available
Text: UGM16T6686KA-PH Data sheets can be downloaded at www.unigen.com 128M Bytes 16M x 64 bits SYNCHRONOUS DRAM MODULE PC133 SDRAM Unbuffered MicroDIMM based on 4 pcs 16M x 16 SDRAM with LVTTL, 4 banks & 8K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)
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UGM16T6686KA-PH
PC133
UGM16T6686KA-PH
16Mbits
144-Pin
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UG432S6488KSG
Abstract: No abstract text available
Text: UG432S6488KSG Data sheets can be downloaded at www.unigen.com 256M Bytes 32M x 64 bits SYNCHRONOUS DRAM MODULE PC100 SDRAM Unbuffered SODIMM based on 8 pcs 32M x 8 SDRAM with LVTTL, 4 banks & 8K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 144-Pin SODIMM
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UG432S6488KSG
PC100
UG432S6488KSG-PL/PH
32Mbits
144-Pin
UG432S6488KSG
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MARKING U1
Abstract: No abstract text available
Text: UG42S6442HSG Data sheets can be downloaded at www.unigen.com 16M Bytes 2M x 64 bits SYNCHRONOUS DRAM MODULE PC100 SDRAM Unbuffered SODIMM based on 2 pcs 2M x 32 SDRAM with LVTTL, 4 banks & 4K Refresh GENERAL DESCRIPTION PIN ASSIGNMENT (Front View) 144-Pin SODIMM
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UG42S6442HSG
PC100
UG42S6442HSG-PL/PH
144-Pin
MARKING U1
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PC100-compliant
Abstract: MT48LCxMxA2 mt48lc8m8b4 SDRAM MICRON micron x8 pc100 sdram mt48lc8m8b4tg-8e 54pin TSOP SDRAM
Text: 64Mb: x4, x8, x16 SDRAM ADDENDUM FOR B4 MT48LC16M4B4 -4 Meg x 4 x 4 banks MT48LC8M8B4 - 2 Meg x 8 x 4 banks MT48LC4M16B4 -1 Meg x 16 x 4 banks SYNCHRONOUS DRAM Refer to the Micron Web site: www.micron.com/mti/msp/html/ datasheet.html for the latest full-length data sheet this applies to.
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MT48LC16M4B4
MT48LC8M8B4
MT48LC4M16B4
PC100-compliant
MT48LCxMxA2
TMS66xx4
54-Pin
PC100.
PC100-based
TMS664xx4
PC100-compliant
SDRAM MICRON
micron x8 pc100 sdram
mt48lc8m8b4tg-8e
54pin TSOP SDRAM
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Untitled
Abstract: No abstract text available
Text: ADVANCE M IC H D IM I M T28F800S2/M T28F008S 2 V 512K x 16, 1 MEG x 8 FLASH MEM ORY 8 MEG SVT-II , LOW POWER, SECTORED ERASE S martV oltage FEATURES PIN ASSIGNMENT (Top View) • • • • Sixteen 64K B/(32K -w ord) erase blocks Programmable sector protect
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T28F800S2/M
T28F008S
120ns,
150ns
56-Pin
MT28F600S2/MT2BF008S2V
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT28F161 1 MEG x 16, 2 MEG x 8 FLASH MEMORY 1 MEG x 16, 2 MEG x 8 5V/5V SECTORED ERASE FEATURES PIN ASSIGNMENT Top View • Thirty-two 64KB/(32K-word) erase blocks • Programmable sector lock • Deep Power-Down Mode: 5|lA MAX • 5V ±10% V cc and Vpp
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OCR Scan
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MT28F161
32K-word)
100ns,
150ns
56-Pin
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT28F800S2/MT28F008S2 V 512K x 16,1 MEG x 8 FLASH MEMORY FLASH MEMORY 8 MEG SVT-II , LOW POWER, SECTORED ERASE S m a r tV o lta g e FEATURES • • • • Sixteen 64KB/(32K-word) erase blocks Programmable sector protect Deep Power-Down Mode: 10(iA MAX
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MT28F800S2/MT28F008S2
32K-word)
120ns,
150ns
70ns/120ns
90ns/150ns
56-Pin
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Untitled
Abstract: No abstract text available
Text: ADVANCE MT28F161 1 MEG x 16, 2 MEG x 8 FLASH MEMORY |V |IC = R O N 5V/5V SECTORED ERASE FEATURES • • • • • • • • • • PIN ASSIGNMENT Top View Thirty-two 64KB/(32K-word) erase blocks Programmable sector lock Deep Power-Down Mode: 5|iA MAX
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OCR Scan
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MT28F161
32K-word)
100ns,
150ns
56-Pin
i------A19
-DQ15
CT995.
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Untitled
Abstract: No abstract text available
Text: ADVANCE 64 MEG: x8 DDR SDRAM MICRON I TECHNOLOGY, INC. MT46LC8M8 - 2 Meg x 8 x 4 banks DOUBLE DATA RATE SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Internal, pipelined double data rate DDR architec
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MT46LC8M8
66-PIN
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