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    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy

    MARKING 52AP Datasheets Context Search

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    52AP

    Abstract: 52AP 6 SOT-23 1B FDN352AP marking 52AP
    Text: FDN352AP Single P-Channel, PowerTrench MOSFET Features General Description • –1.3 A, –30V –1.1 A, –30V RDS ON = 180 mΩ @ VGS = –10V RDS(ON) = 300 mΩ @ VGS = –4.5V This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has


    Original     		FDN352AP OT-23 FDN352AP 52AP 52AP 6 SOT-23 1B marking 52AP PDF

    Untitled

    Abstract: No abstract text available
    Text: FDN352AP Single P-Channel, PowerTrench MOSFET Features General Description • –1.3 A, –30V RDS ON = 180 mΩ @ VGS = –10V –1.1 A, –30V RDS(ON) = 300 mΩ @ VGS = –4.5V ■ High performance trench technology for extremely low RDS(ON). ■ High power version of industry Standard SOT-23 package.


    Original     		FDN352AP OT-23 FDN352AP PDF

    fdn352ap

    Abstract: 52AP notebook battery pinout smart fdn352
    Text: FDN352AP Single P-Channel, PowerTrench MOSFET Features General Description • –1.3 A, –30V –1.1 A, –30V RDS ON = 180 mΩ @ VGS = –10V RDS(ON) = 300 mΩ @ VGS = –4.5V This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has


    Original     		FDN352AP OT-23 FDN352AP 52AP notebook battery pinout smart fdn352 PDF

    52AP

    Abstract: marking 52AP 52AP 6 fdn352
    Text: FDN352AP Single P-Channel, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate


    Original     		FDN352AP OT-23 52AP marking 52AP 52AP 6 fdn352 PDF