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    MARKING 52S Search Results

    MARKING 52S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING 52S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMHZ5270BPT

    Abstract: GP 52b DIODE marking 24b sot-23 MMHZ5232 MMSZ5247SPT MMPZ5232BPT zener diode in 5229 b MMPZ5250BPT MMPZ5221BPT MMPZ5235BPT
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Marking Min Nom Max Volts Volts Volts Maximum Zener impedance Test current IZT(mA) Maximum reverse leakage current ZZT at IZT (Ω) Zzk (Ω)


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    PDF OT-23 MMHZ5270BPT GP 52b DIODE marking 24b sot-23 MMHZ5232 MMSZ5247SPT MMPZ5232BPT zener diode in 5229 b MMPZ5250BPT MMPZ5221BPT MMPZ5235BPT

    pt 4515

    Abstract: MMPZ5250B 52B zener MMSZ5259S MMHZ5246B marking 24b sot-23 MMCZ5248B MMPZ5248B MMDZ5235B MMGZ5242B
    Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Marking Min Nom Max Volts Volts Volts Test current IZT(mA) Maximum Zener impedance ZZT at IZT (Ω) 30 30 30 30 29 28 24 23 22 19 17 11 7 7


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    Untitled

    Abstract: No abstract text available
    Text: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the


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    PDF EN29LV640T/B 00B5h 00C5h

    cFeon EN

    Abstract: cFeon sg32 diode EN29LV640B 7400 4p toggle switch 555 data sheet cFeon EN29LV640B cFeon F data sheet 555
    Text: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the


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    PDF EN29LV640T/B cFeon EN cFeon sg32 diode EN29LV640B 7400 4p toggle switch 555 data sheet cFeon EN29LV640B cFeon F data sheet 555

    cFeon

    Abstract: cFeon F cFeon EN29LV640B cFeon EN29lv640 A0-A21 EN29LV640b cfeon flash 72-SA
    Text: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the


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    PDF EN29LV640T/B cFeon cFeon F cFeon EN29LV640B cFeon EN29lv640 A0-A21 EN29LV640b cfeon flash 72-SA

    amphenol 74868

    Abstract: 903-284P-52S amphenol 349-50521
    Text: 903-284P-52S NOTES: 1. MATERIALS AND FINISHES: BODYS - BRASS, GOLD PLATING CONTACT - BERYLLIUM COPPER, GOLD PLATING INSULATOR - PTFE 2. ELECTRICAL: A. IMPEDANCE: 50 OHM 3. MECHANICAL: A. DURABILITY: 500 CYCLES MIN. B. TEMPERATURE RANGE: -65 $C TO +165 $C 4. PACKAGING:


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    PDF 903-284P-52S MIL-STD-348 06-Jul-09 RG-316 amphenol 74868 903-284P-52S amphenol 349-50521

    IrDA

    Abstract: No abstract text available
    Text: •電気的光学的特性/Electro-optical characteristics CIM-52S7V 項目/Item 電源電圧 Power supply voltage 供給電圧 Power supply voltage 通信レート トランシーバー Communications rate Transceiver 消費電流 Current drawn Power Down電流


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    PDF CIM52S7V CIM-71S2 IrDA

    transistor marking A9

    Abstract: diode MARKING A9 diode MARKING CODE A9 A9 sot223 mosfet marking a9 L55012 p1 52ax 52LX marking 24b sot-23 51DX
    Text: APL5501/2/3 Low IQ, Low Dropout 500mA Fixed Voltage Regulator Features APL5501 BP 5 1 2 3 V IN GND Notebook Computer PDA or Portable Equipments Noise-Sensitive Instrumentation Systems General Description IN 1 8 OU T GND 2 7 GN D GND 3 6 GN D SHDN 4 5 BY P


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    PDF APL5501/2/3 500mA 150mA OT-23-5, OT-89, OT-89-5, OT-223, O-252 O-252-5 APL5501 transistor marking A9 diode MARKING A9 diode MARKING CODE A9 A9 sot223 mosfet marking a9 L55012 p1 52ax 52LX marking 24b sot-23 51DX

    Untitled

    Abstract: No abstract text available
    Text: THIS DRAWING IS A CONTROLLED DOCUMENT. LOC REVISIONS DIST HJ - P LTR B1 B2 B3 C DESCRIPTION DWN DATE New HF3 51S, HF3 56S, HF3 91S Printing , new HF3 53RS New HF3 91R, HF3 93R, HF3 96R REVISED PER ECO-13-009645 HD HD BK AK UKo UKo UKo UKo 06APR2010 09JUL2010


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    PDF ECO-13-009645 06APR2010 09JUL2010 12JAN2012 18JUN2013 COPYRIGHT2007 04APR2007 04APR2007 7168-m

    GMS87C7016

    Abstract: VCL11 GMS81C7008 GMS81C7016 transistor 7016 ACTKEY
    Text: HYNIX SEMICONDUCTOR INC. 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS81C7008 GMS81C7016 User’s Manual Ver. 2.01 REVISION HISTORY VERSION 2.01 (APR., 2001) This book Delete product of 52SDIP package also, no longer produce 52pin MCU. The compay name Hyundai Electronics Industires Co., Ltd. changed to Hynix Semiconductor Inc.


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    PDF GMS81C7008 GMS81C7016 52SDIP 52pin 52LQFP GMS87C7016 VCL11 GMS81C7008 GMS81C7016 transistor 7016 ACTKEY

    SAW MARKING CODE SOT23

    Abstract: H8 SOT-23 SOT23 marking D1G SAW MARKING CODE SOT-23 52s marking code AZP51SG marking Z6 AZP51 52S marking microtek
    Text: ARIZONA MICROTEK, INC. AZP51 AZP52 AZP53 AZP54 Low Phase Noise Sine Wave to LVPECL Buffer/Divider PACKAGE AVAILABILITY FEATURES BASE PART • • • • • • 3.0 to 3.6 V operating supply range LVPECL Outputs Optimized for Low Phase Noise Frequency Input


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    PDF AZP51 AZP52 AZP53 AZP54 SC-70 OT-23 SAW MARKING CODE SOT23 H8 SOT-23 SOT23 marking D1G SAW MARKING CODE SOT-23 52s marking code AZP51SG marking Z6 AZP51 52S marking microtek

    SAW MARKING CODE SOT23

    Abstract: SAW MARKING CODE SOT-23 52S marking 52s marking code AZP51SG AZP52 AZP53 AZP54VG AZP51 AZP51S
    Text: ARIZONA MICROTEK, INC. AZP51 AZP52 AZP53 AZP54 Low Phase Noise Sine Wave to LVPECL Buffer/Divider PACKAGE AVAILABILITY FEATURES BASE PART • • • • • • 3.0 to 3.6 V operating supply range LVPECL Outputs Optimized for Low Phase Noise Frequency Input


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    PDF AZP51 AZP52 AZP53 AZP54 SC-70 OT-23 SAW MARKING CODE SOT23 SAW MARKING CODE SOT-23 52S marking 52s marking code AZP51SG AZP52 AZP53 AZP54VG AZP51 AZP51S

    52s marking code

    Abstract: 52s marking Silicon N Channel MOSFET Tetrode
    Text: Silicon N Channel MOSFET Tetrode BF 995 F o r F M and V H F T V input and m ixer sta g e s Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package B F 995 MB Q 62702-F872 Q 62702-F936 S O T 143 Maximum ratings Parameter


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    PDF 62702-F872 62702-F936 I-150 52s marking code 52s marking Silicon N Channel MOSFET Tetrode

    asea time-lag relay RI

    Abstract: asea relay RIS rma 16 relay ASEA RHGA 8 ASEA RIs asea ridi asea over current relay asea relay RI RCA RF Catalogue asea relay
    Text: i ASEA Catalogue RK 93 E Edition 1 May 1966 File R Part 2 Frames and connectors for relays Contents: Front terminals Extension bolts and terminal screws Flush mounting frames Blanking plates Adapting frames Relay testing block RTNP P -2 3 4 9 9 10 ASEA Front terminals


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    PDF a5203 asea time-lag relay RI asea relay RIS rma 16 relay ASEA RHGA 8 ASEA RIs asea ridi asea over current relay asea relay RI RCA RF Catalogue asea relay

    52s marking code

    Abstract: 52S marking marking 52s
    Text: 3.5 V, 6.5 V RATED VOLTAGE SERIES 3.5 V, 6.5 V RATED VOLTAGE SERIES FSH TYPE, FYD TYPE These 3.5 V and, 6.5 V rated voltage are suitable for use in portable or battery-driven equipment. These capacitors are especially ideal as backup devices for cameras, remote controllers, headphone and


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    PDF 0J233Z FYD0J273Z 52s marking code 52S marking marking 52s

    MESFET Application

    Abstract: 52s marking MARKING 52S
    Text: HITACHI 3SK239A-GaAs N-Channel Dual Gate MESFET Application C M P A K -4 UHF RF amplifier Features 2 • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation 4 1. 2. 3. 4. Source Gatel Gate2


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    PDF 3SK239A--------------GaAs 3SK239A MESFET Application 52s marking MARKING 52S

    BSP225

    Abstract: No abstract text available
    Text: Philips Com ponents Data sheet status Product specification date of issue November 1990 P-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES • LOW BSP225 RDS on SYMBOL • Direct interface to C-MOS, TTL, etc. • High-speed switching


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    PDF BSP225 OT223 bb53T31 003bl00 BSP225. OT223. BSP225

    PMST3904

    Abstract: No abstract text available
    Text: • Philips Semiconductors APX bb53^3]. 0D25e132 lib Product specification AMER PHILIPS/DISCRETE b?E D PMST3904 NPN switching transistor FEATURES PIN CONFIGURATION • S-mini package • Short switching time. DESCRIPTION NPN transistor in a plastic SOT323


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    PDF 0D25e PMST3904 OT323 MAM062 PMST3904

    QFP48-P-0707

    Abstract: marking code 1bx TR 610s ccd 270k sharp 22 pin QFP48 package LZ9FD34 IC CODE 2AX 7h0 ITT PEAK tray drawing nd 0707 IR684
    Text: SHARP SHARP LZ9 FD3 4 L Z 9 FD3 4 # Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company. # When using the products covered herein, please observe the conditions written herein


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    PDF EL105043 270K-320K QFP48-P-0707 AA1035 CV536 QFP48-P-0707 marking code 1bx TR 610s ccd 270k sharp 22 pin QFP48 package LZ9FD34 IC CODE 2AX 7h0 ITT PEAK tray drawing nd 0707 IR684

    3SK177

    Abstract: U7210 transistor d 2389 52S marking
    Text: MES FIELD EFFECT TRANSISTOR 3SK177 RF A M P. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 P IN M IN I MOLD FEATURES PACKAGE DIMENSIONS • Suitable fo r use as R F a m p lifie r in U H F T V tuner. in millimeters • L o w C ,; : 0 .0 2 pF TYP.


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    PDF 3SK177 3SK177 U7210 transistor d 2389 52S marking

    Untitled

    Abstract: No abstract text available
    Text: 3 V, WIDEBAND MEDIUM POWER SI MMIC AMPLIFIER FEATURES UPC2762T UPC2763T GAIN vs. FREQUENCY Vcc = 3.0 V, Icc = 27 mA 7 d B m PidB T Y P IC A L A T 1.9 GHz LO W V O LT A G E : 3 Volts W ID E BAN D W ID T H : 2.9 GHz at -3 dB UPC2762T HIGH G AIN : 20 dB at 1.9 GHz (UPC2763T)


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    PDF UPC2762T UPC2763T UPC2762T) UPC2763T) 2762T 2763T UPC2762T-E3 UPC2763T-E3

    5267-03

    Abstract: 1A05G marking 3U transistor A23LC
    Text: SHARP» GP1A05/GP1A22LC/GP1A23LC/GP1A25LC OPIC Photointerrupter with Connector GP1A05/GP1A22LC/ GP1A23LC/GP1A25LC • Features ■ Applications ]. Uses 3-pin connector terminal 2. High sensing accuracy Slit width : 0.5m m 2. Facsimiles 1. Copiers, Printers


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    PDF GP1A05/GP1A22LC/GP1A23LC/GP1A25LC GP1A05/GP1A22LC/ GP1A23LC/GP1A25LC GP1A05 GP1A22LC 5267-03 1A05G marking 3U transistor A23LC

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD431008L 1M-BIT CM OS FAST STATIC RAM 128K-WORD BY 8-BIT D escription The,uPD431008L is a high speed, low power, 1, 048, 576 bits 131,072 w ords by 8 bits CMOS static RAM. Operating supply voltage is 3.3 V ± 0.3 V.


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    PDF PD431008L 128K-WORD uPD431008L 32-pin PD431008LLE-A17 431008LLE-A20 b427525 oo8t8885

    clarostat POTENTIOMETER

    Abstract: clarostat RV4 potentiometers LA 2786 sj 2907 J-D1N clarostat cm POTENTIOMETER rheostat 25 watt 1000 ohm JAIN200P 201 200 OHM Variable Resistors Potentiometer Logarithmic Potentiometer B 203
    Text: Type J Hot-Molded Panel Potentiometers F eatures _ B e n e fits - • 2.25 Watts @ 70 C . ■ 50 Ohms to 5 Megohms . ■ Multiple Sections/Concenti» Shafts . . ■ UL Approved Switches . . .


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