SOT89 transistor marking
Abstract: SOT89 MARKING CODE PNP TRANSISTOR "SOT89" marking code NA sot23 Transistor 5C5 "PNP Transistor" PNP TRANSISTOR SOT89 PNP Epitaxial Silicon Transistor sot223 sot89 "NPN TRANSISTOR" NPN transistor collector base and emitter
Text: PRODUCT announcement New Tiny Packages High Voltage Small Signal Transistors SOT-563 SOT-523 Dual Single SOT-23 SOT-89 SOT-223 SOT-228 Single Single Single Dual features • VCEO = 160V NPN , 150V (PNP) • IC = 600mA (NPN), 500mA (PNP) • Ideal for high voltage amplifier applications
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OT-563
OT-523
OT-23
OT-89
OT-223
OT-228
600mA
500mA
CMLT5551HC
OT-563)
SOT89 transistor marking
SOT89 MARKING CODE
PNP TRANSISTOR "SOT89"
marking code NA sot23
Transistor 5C5
"PNP Transistor"
PNP TRANSISTOR SOT89
PNP Epitaxial Silicon Transistor sot223
sot89 "NPN TRANSISTOR"
NPN transistor collector base and emitter
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5C75
Abstract: 5SMC33 5SMC170A 5SMC160A 5SMC33A
Text: 5SMC33A THRU 5SMC170A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSORS 5000 WATT, 33 THRU 170 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR 5SMC33A series devices are surface mount uni-directional glass passivated
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5SMC33A
5SMC170A
5SMC33A
5C160A
5C170A
10-September
5C75
5SMC33
5SMC170A
5SMC160A
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Transistor 5C5
Abstract: MARKING 5c5 CMLT5551
Text: Central CMLT5551 SURFACE MOUNT PICOminiTM DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5551 consists of two individual, isolated NPN silicon transistors, manufactured by the epitaxial planar
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CMLT5551
OT-563
OT-563
100MHz
15-October
Transistor 5C5
MARKING 5c5
CMLT5551
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Transistor 5C5
Abstract: CMLT5551
Text: CMLT5551 SURFACE MOUNT DUAL NPN SMALL SIGNAL HIGH VOLTAGE SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5551 consists of two individual, isolated NPN silicon transistors, manufactured by the epitaxial planar
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CMLT5551
OT-563
100MHz
20-January
Transistor 5C5
CMLT5551
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Untitled
Abstract: No abstract text available
Text: CMLT5551 SURFACE MOUNT SILICON DUAL, HIGH VOLTAGE NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5551 consists of two individual, isolated NPN silicon transistors manufactured by the epitaxial planar process and epoxy molded in an SOT-563 suface
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CMLT5551
OT-563
100MHz
12-February
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Untitled
Abstract: No abstract text available
Text: CMLT5551 SURFACE MOUNT DUAL NPN SMALL SIGNAL HIGH VOLTAGE SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5551 consists of two individual, isolated NPN silicon transistors, manufactured by the epitaxial planar
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CMLT5551
OT-563
100MHz
20-January
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Untitled
Abstract: No abstract text available
Text: Skip to content | | | Products By Ty pe Connectors Electromechanical Components Electronic Modules Fiber Optics Filters Identification & Labeling Passive Com ponents Power Sources RF & Microwave Products Tooling Products Touch Screen Display s Tubing, Molded and H arnessing Products
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Untitled
Abstract: No abstract text available
Text: Skip to content | | | Products By Ty pe Connectors Electromechanical Components Electronic Modules Fiber Optics Filters Identification & Labeling Passive Com ponents Power Sources RF & Microwave Products Tooling Products Touch Screen Display s Tubing, Molded and H arnessing Products
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PDF
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Untitled
Abstract: No abstract text available
Text: Skip to content | | | Products By Ty pe Connectors Electromechanical Components Electronic Modules Fiber Optics Filters Identification & Labeling Passive Com ponents Power Sources RF & Microwave Products Tooling Products Touch Screen Display s Tubing, Molded and H arnessing Products
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m39029/63-368
Abstract: MIL-C-39029 pin dimension 24-33F m81969/1-02 20509 205167-1 M39029/64-369 M22520/2-08 446405-1 328F
Text: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 AMPLIMITE Subminiature D Connectors per MIL-C-24308 Catalogue 1654741 Revised 1-04 Features • ■ ■ ■ ■ ■ 1 Input/Output Connectors ■ Military qualified connectors
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MIL-C-24308
MIL-C-39029
M22520/2
m39029/63-368
MIL-C-39029 pin dimension
24-33F
m81969/1-02
20509
205167-1
M39029/64-369
M22520/2-08
446405-1
328F
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D-32425
Abstract: FF-890 D-32425-Minden foundation field bus 2010TD ABB pressure sensor 10mbar PN400 transistor marking 5c8 2010TA 2010TC
Text: Multi Vision Multivariable Transmitter 2010TC for Differential Pressure, Pressure and Temperature Mass Flow Spans: 0.5 mbar . 100 bar 10/15-4.12 EN 2010TCSW.TIF • ■ ■ ■ ■ ■ ■ Compensated mass flow measurement ■ Communication protocol:
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2010TC
2010TCSW
D-32425
FF-890
D-32425-Minden
foundation field bus
2010TD ABB
pressure sensor 10mbar
PN400
transistor marking 5c8
2010TA
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IMISG509
Abstract: No abstract text available
Text: REDUCED EMI CLOCK CHIP IMISG509 CMOS LSI SPREAD SPECTRUM CLOCK GENERA TOR May 19 1995 PR O D U C T FEA TURES • Generates CPU Clock Signals for Microprocessor Systems ■ Reduces Measured EMI by 10 db nominal ■ 4V to 6V Operating Supply Range ■ Supports CPUs from all major manufacturers.
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OCR Scan
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IMISG509
IMISG509
IMISG509XPB
IMISG509xXB
SG509xPB
4flS041fl
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Untitled
Abstract: No abstract text available
Text: DATASHEET TEMPERATURE COMPENSATED REAL-TIME CLOCK WITH TAMPER DETECT IDT5T90008 Description Features The IDT5T90008 is a temperature compensated real-time clock RTC device that consumes ultra-low power and provides a full binary-coded decimal (BCD) clock/calendar
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IDT5T90008
IDT5T90008
24-hour
12-hour
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103 c1k
Abstract: HCTS273 T004 qml-38535 qml38535
Text: REVISIONS APPROVED DATE YR-MO-DA DESCRIPTION ltr REV SHEET REV SHEET 15 16 REV REV STATUS OF SHEETS SHEET 9 1 PREPARED BY Joseph A. Kerby PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE
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MIL-BUL-103.
MIL-BUL-103
103 c1k
HCTS273
T004
qml-38535
qml38535
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IPB025N10N3
Abstract: IPB025 b1c diode marking a5 4r diode marking a5 4r diode b1c
Text: IPB025N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C & V 9H ( J R 9H"[Z#$YMc *&- Y" I9 )0( 6 P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH
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IPB025N10N3
IPB025
b1c diode
marking a5 4r diode
marking a5 4r
diode b1c
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Untitled
Abstract: No abstract text available
Text: IPA105N15N3 G TM 3 Power-Transistor Product Summary Features P' 381>>5<>?A=1<<5E5< PG35<<5>C71C5381A75GR 9H"[Z#@A?4D3C & V 9H -( J R ,?>=1G )(&- Y I9 +/ 6 P.5AH<?F?> A5B9BC1>35R 9H"[Z# P S?@5A1C9>7C5=@5A1CDA5
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IPA105N15N3
381A75à
C1A75Cà
931C9?
C85AF9B5à
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B1C DIODE
Abstract: IPB039N10N3 marking 1c marking a5 4r diode
Text: IPB039N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C & V 9H ( J R 9H"[Z#$YMc +&1 Y" I9 ).( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH
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IPB039N10N3
B1C DIODE
marking 1c
marking a5 4r diode
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Untitled
Abstract: No abstract text available
Text: IPB039N10N3 G 3 Power-Transistor Product Summary Features P' 381>>5<>?A=1<<5E5< PG35<<5>C71C5381A75GR 9H"[Z#@A?4D3C & V 9H ( J R 9H"[Z#$YMc +&1 Y I9 ).( 6 P.5AH<?F?> A5B9BC1>35R 9H"[Z# P"9783DAA5>C31@129<9CH
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IPB039N10N3
381A75à
C1A75Cà
931C9?
C85AF9B5à
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IPA105N15N3
Abstract: IPA105N15N 81a diode
Text: IPA105N15N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C & V 9H -( J R , ? >=1G )(&- Y" +/ I9 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P S ? @5A1C9>7 C5=@5A1CDA5
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IPA105N15N3
IPA105N15N
81a diode
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Untitled
Abstract: No abstract text available
Text: IPB025N10N3 G 3 Power-Transistor Product Summary Features P' 381>>5<>?A=1<<5E5< PG35<<5>C71C5381A75GR 9H"[Z#@A?4D3C & V 9H ( J R 9H"[Z#$YMc *&- Y I9 )0( 6 PGCA5=5<H<?F?> A5B9BC1>35R 9H"[Z# P"9783DAA5>C31@129<9CH
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IPB025N10N3
381A75à
C1A75Cà
931C9?
C85AF9B5à
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65A3
Abstract: 5E DIODE marking c-9
Text: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H P 6? ABH>3 A53 C96931C9? > 4A9E5B1>4 43 43 ,& , R , ? >=1G, & P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C & I9 P ' 3 81>>5< >? A=1<<5E5<
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IPB037N06N3
IPI040N06N3
IPP040N06N3
65A3
5E DIODE
marking c-9
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65a3
Abstract: be5a IPB025N10N3G V9910 95E-9
Text: IPB025N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C & V 9H ( J R 9H"[Z#$YMc *&- Y" I9 )0( 6 P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH
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IPB025N10N3
726-IPB025N10N3G
65a3
be5a
IPB025N10N3G
V9910
95E-9
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Untitled
Abstract: No abstract text available
Text: IPB090N06N3 G IPP093N06N3 G Id\Q 3 Power-Transistor Product Summary Features P6?ABH>3 A53C96931C9?>4A9E5B1>443 43,& , PG35<<5>C71C5381A75GR 9H"[Z#@A?4D3C & V 9H .( J R ,?>=1G,& 1 Y I9 -(
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IPB090N06N3
IPP093N06N3
381A75à
A53C96931C9?
A1C54
C1A75Cà
931C9?
C85AF9B5à
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Untitled
Abstract: No abstract text available
Text: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G 3 Power-Transistor Product Summary Features V 9H . J P6?ABH>3 A53C96931C9?>4A9E5B1>443 43,& , R ,?>=1G,& +&/ Y PG35<<5>C71C5381A75GR 9H"[Z#@A?4D3C (&
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IPB037N06N3
IPI040N06N3
IPP040N06N3
A53C96931C9?
381A75à
A1C54
C1A75Cà
931C9?
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