MMBZ5245B
Abstract: No abstract text available
Text: SEMICONDUCTOR MMBZ5245B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 8V 1 2 Item Marking Description Device Mark 8V MMBZ5245B hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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MMBZ5245B
OT-23
MMBZ5245B
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G FEATURE 3 ƽ Pb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate
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LBSS123LT1G
OT-23
3000/Tape
LBSS123LT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G 3 FEATURE ƽ Pb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION Device 2 SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate
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LBSS123LT1G
OT-23
3000/Tape
LBSS123LT3G
10000/Tape
195mm
150mm
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LBSS123LT1G
Abstract: LBSS123LT3G
Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G FEATURE 3 ƽ Pb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate
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LBSS123LT1G
OT-23
3000/Tape
LBSS123LT3G
10000/Tape
195mm
150mm
LBSS123LT1G
LBSS123LT3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LMBF170LT1G LMBF170LT1G 3 FEATURE 1 ƽ Pb-Free Package is available. 2 SOT-23 DEVICE MARKING AND ORDERING INFORMATION Device Marking Drain 3 Shipping LMBF170LT1G 6Z 3000/Tape&Reel LMBF170LT3G 6Z 10000/Tape&Reel
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LMBF170LT1G
OT-23
3000/Tape
LMBF170LT3G
10000/Tape
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smd k72 y5
Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR
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1N4148W
1N4148WX
1N4148X
1N4448W
1N4448WX
1N4448X
1N914W
1SS181
1SS184
1SS193
smd k72 y5
K72 y8
k72 y4
BAS70WT
46A gez
SMBJ8.5CA
SMBJ11CA
SMD Marking K72
sk 75 dgm
marking f5 sot-89
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Transistor BFT 93
Abstract: Transistor BFT 10 Q62702-F1063 MARKING 93 40mAIC BFT93
Text: BFT 93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package
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OT-23
Q62702-F1063
Dec-12-1996
Transistor BFT 93
Transistor BFT 10
Q62702-F1063
MARKING 93
40mAIC
BFT93
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TMPZ5231
Abstract: MMBZ5228B marking code 8P MMBZ5227B 8B TMPZ5232B MMBZ5226B MMBZ5227B MMBZ5229B MMBZ5230B MMBZ5231B
Text: CE MMBZ52-SERIES CHENYI ELECTRONICS 350mW SURFACE MOUNT ZENER DIODES Nominal Cross- Marking Zen.V1tg @Izt Dynamic Test Dynamic Test Revrese Test Imped. Current Imped. Current Current Voltage Package Reel Part No. Reference Code Ir uA Vr(V) MMBZ5226B TMPZ5226B
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MMBZ52-SERIES
350mW
MMBZ5226B
TMPZ5226B
MMBZ5227B
TMPZ5227B
MMBZ5228B
TMPZ5228B
MMBZ5229B
TMPZ5229B
TMPZ5231
MMBZ5228B
marking code 8P
MMBZ5227B 8B
TMPZ5232B
MMBZ5226B
MMBZ5227B
MMBZ5229B
MMBZ5230B
MMBZ5231B
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DIODE 85c 5V1
Abstract: 4v7 zener diode 1 watt
Text: S EM ICOND UCTOR 1.3 Watt DO-41 Hermetically Sealed Glass Zener Voltage Regulators AXIAL LEAD DO41 Absolute Maximum Ratings DEVICE MARKING DIAGRAM TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature
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DO-41
TCBZX85C3V3
DB-100
DIODE 85c 5V1
4v7 zener diode 1 watt
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Transistor BFT 92W
Abstract: 30227 Transistor BFT 10 transistor BFt 65 Q62702-F1681
Text: BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OT-323
Q62702-F1681
900MHz
Dec-11-1996
Transistor BFT 92W
30227
Transistor BFT 10
transistor BFt 65
Q62702-F1681
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30227
Abstract: Transistor BFT 10 Q62702-F1062 w1s sot23
Text: BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OT-23
Q62702-F1062
900MHz
Dec-13-1996
30227
Transistor BFT 10
Q62702-F1062
w1s sot23
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dual npn 500ma
Abstract: CTLM1034-M832D CTLM1074-M832D TLM832D
Text: CTLM1034-M832D MULTI DISCRETE MODULE SURFACE MOUNT LOW VCE SAT SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM Top View Bottom View TLM832D CASE MARKING CODE: CFC APPLICATIONS • Switching Circuits • DC / DC Converters • LCD Backlighting
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CTLM1034-M832D
TLM832D
CTLM1034-M832D
100mA
500mA
09-August
dual npn 500ma
CTLM1074-M832D
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IC 2272
Abstract: Q62702-F1601 GMA marking
Text: BFP 182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
OT-143R
Q62702-F1601
Jan-21-1997
IC 2272
Q62702-F1601
GMA marking
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Transistor BFR 90
Abstract: F1510 Q62702-F1510 Transistor BFR 900mhz 193W
Text: BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
OT-323
Q62702-F1510
Dec-11-1996
Transistor BFR 90
F1510
Q62702-F1510
Transistor BFR 900mhz
193W
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TS 11178
Abstract: BF 194 transistor marking code RKS transistors Q62702-F1347 bf 194 pin configuration
Text: BFP 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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OT-143
Q62702-F1347
900MHz
Dec-13-1996
TS 11178
BF 194 transistor
marking code RKS transistors
Q62702-F1347
bf 194 pin configuration
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Q62702-F1577
Abstract: 193W
Text: BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
OT-343
Q62702-F1577
Dec-12-1996
Q62702-F1577
193W
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MJE 340 transistor
Abstract: Q62702-F1501
Text: BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
OT-343
Q62702-F1501
Aug-30-1996
MJE 340 transistor
Q62702-F1501
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Q62702-F1491
Abstract: GMA marking 175fF
Text: BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
OT-323
Q62702-F1491
Dec-11-1996
Q62702-F1491
GMA marking
175fF
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Q62702-F1271
Abstract: No abstract text available
Text: BFP 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
OT-143
Q62702-F1271
Dec-11-1996
Q62702-F1271
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l05a
Abstract: 6k SOT223 marking FZT705
Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARUNGTON TRANSISTOR ISSUE 2 - OCTOBER 1995 FEATURES * 2A CONTINUOUS CURRENT * * FAST SWITCHING GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE - FZT605 PART MARKING DETAIL - FZT705 ABSOLUTE MAXIMUM RATINGS. PARAMETER
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OT223
FZT605
FZT705
-100mA
-10mA*
-100hA
-120V
FZT705
FZT704
55-c\
l05a
6k SOT223
marking FZT705
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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900MHz
OT-343
BFP182W
Q62702-F1502
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fr = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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900MHz
Q62702-F1492
OT-323
IS211
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