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    MARKING 8V Search Results

    MARKING 8V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING 8V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MMBZ5245B

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MMBZ5245B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 8V 1 2 Item Marking Description Device Mark 8V MMBZ5245B hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


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    PDF MMBZ5245B OT-23 MMBZ5245B

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


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    PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G FEATURE 3 ƽ Pb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate


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    PDF LBSS123LT1G OT-23 3000/Tape LBSS123LT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G 3 FEATURE ƽ Pb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION Device 2 SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate


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    PDF LBSS123LT1G OT-23 3000/Tape LBSS123LT3G 10000/Tape 195mm 150mm

    LBSS123LT1G

    Abstract: LBSS123LT3G
    Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G FEATURE 3 ƽ Pb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate


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    PDF LBSS123LT1G OT-23 3000/Tape LBSS123LT3G 10000/Tape 195mm 150mm LBSS123LT1G LBSS123LT3G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LMBF170LT1G LMBF170LT1G 3 FEATURE 1 ƽ Pb-Free Package is available. 2 SOT-23 DEVICE MARKING AND ORDERING INFORMATION Device Marking Drain 3 Shipping LMBF170LT1G 6Z 3000/Tape&Reel LMBF170LT3G 6Z 10000/Tape&Reel


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    PDF LMBF170LT1G OT-23 3000/Tape LMBF170LT3G 10000/Tape

    smd k72 y5

    Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
    Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR


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    PDF 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 smd k72 y5 K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89

    Transistor BFT 93

    Abstract: Transistor BFT 10 Q62702-F1063 MARKING 93 40mAIC BFT93
    Text: BFT 93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package


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    PDF OT-23 Q62702-F1063 Dec-12-1996 Transistor BFT 93 Transistor BFT 10 Q62702-F1063 MARKING 93 40mAIC BFT93

    TMPZ5231

    Abstract: MMBZ5228B marking code 8P MMBZ5227B 8B TMPZ5232B MMBZ5226B MMBZ5227B MMBZ5229B MMBZ5230B MMBZ5231B
    Text: CE MMBZ52-SERIES CHENYI ELECTRONICS 350mW SURFACE MOUNT ZENER DIODES Nominal Cross- Marking Zen.V1tg @Izt Dynamic Test Dynamic Test Revrese Test Imped. Current Imped. Current Current Voltage Package Reel Part No. Reference Code Ir uA Vr(V) MMBZ5226B TMPZ5226B


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    PDF MMBZ52-SERIES 350mW MMBZ5226B TMPZ5226B MMBZ5227B TMPZ5227B MMBZ5228B TMPZ5228B MMBZ5229B TMPZ5229B TMPZ5231 MMBZ5228B marking code 8P MMBZ5227B 8B TMPZ5232B MMBZ5226B MMBZ5227B MMBZ5229B MMBZ5230B MMBZ5231B

    DIODE 85c 5V1

    Abstract: 4v7 zener diode 1 watt
    Text: S EM ICOND UCTOR 1.3 Watt DO-41 Hermetically Sealed Glass Zener Voltage Regulators AXIAL LEAD DO41 Absolute Maximum Ratings DEVICE MARKING DIAGRAM TA = 25°C unless otherwise noted Parameter Power Dissipation Storage Temperature Range Operating Junction Temperature


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    PDF DO-41 TCBZX85C3V3 DB-100 DIODE 85c 5V1 4v7 zener diode 1 watt

    Transistor BFT 92W

    Abstract: 30227 Transistor BFT 10 transistor BFt 65 Q62702-F1681
    Text: BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


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    PDF OT-323 Q62702-F1681 900MHz Dec-11-1996 Transistor BFT 92W 30227 Transistor BFT 10 transistor BFt 65 Q62702-F1681

    30227

    Abstract: Transistor BFT 10 Q62702-F1062 w1s sot23
    Text: BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


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    PDF OT-23 Q62702-F1062 900MHz Dec-13-1996 30227 Transistor BFT 10 Q62702-F1062 w1s sot23

    dual npn 500ma

    Abstract: CTLM1034-M832D CTLM1074-M832D TLM832D
    Text: CTLM1034-M832D MULTI DISCRETE MODULE SURFACE MOUNT LOW VCE SAT SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE TM Top View Bottom View TLM832D CASE MARKING CODE: CFC APPLICATIONS • Switching Circuits • DC / DC Converters • LCD Backlighting


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    PDF CTLM1034-M832D TLM832D CTLM1034-M832D 100mA 500mA 09-August dual npn 500ma CTLM1074-M832D

    IC 2272

    Abstract: Q62702-F1601 GMA marking
    Text: BFP 182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF 900MHz OT-143R Q62702-F1601 Jan-21-1997 IC 2272 Q62702-F1601 GMA marking

    Transistor BFR 90

    Abstract: F1510 Q62702-F1510 Transistor BFR 900mhz 193W
    Text: BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF 900MHz OT-323 Q62702-F1510 Dec-11-1996 Transistor BFR 90 F1510 Q62702-F1510 Transistor BFR 900mhz 193W

    TS 11178

    Abstract: BF 194 transistor marking code RKS transistors Q62702-F1347 bf 194 pin configuration
    Text: BFP 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF OT-143 Q62702-F1347 900MHz Dec-13-1996 TS 11178 BF 194 transistor marking code RKS transistors Q62702-F1347 bf 194 pin configuration

    Q62702-F1577

    Abstract: 193W
    Text: BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF 900MHz OT-343 Q62702-F1577 Dec-12-1996 Q62702-F1577 193W

    MJE 340 transistor

    Abstract: Q62702-F1501
    Text: BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF 900MHz OT-343 Q62702-F1501 Aug-30-1996 MJE 340 transistor Q62702-F1501

    Q62702-F1491

    Abstract: GMA marking 175fF
    Text: BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF 900MHz OT-323 Q62702-F1491 Dec-11-1996 Q62702-F1491 GMA marking 175fF

    Q62702-F1271

    Abstract: No abstract text available
    Text: BFP 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF 900MHz OT-143 Q62702-F1271 Dec-11-1996 Q62702-F1271

    l05a

    Abstract: 6k SOT223 marking FZT705
    Text: SOT223 PNP SILICON PLANAR MEDIUM POWER DARUNGTON TRANSISTOR ISSUE 2 - OCTOBER 1995 FEATURES * 2A CONTINUOUS CURRENT * * FAST SWITCHING GUARANTEED HFE SPECIFIED UP TO 2A COMPLEMENTARY TYPE - FZT605 PART MARKING DETAIL - FZT705 ABSOLUTE MAXIMUM RATINGS. PARAMETER


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    PDF OT223 FZT605 FZT705 -100mA -10mA* -100hA -120V FZT705 FZT704 55-c\ l05a 6k SOT223 marking FZT705

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


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    PDF 900MHz OT-343 BFP182W Q62702-F1502

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fr = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


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    PDF 900MHz Q62702-F1492 OT-323 IS211