Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAV70WT1G FEATURE ƽSmall plastic SMD package. 3 ƽFor high-speed switching applications. ƽPb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAV70WT1G A4 3000/Tape&Reel
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LBAV70WT1G
3000/Tape
LBAV70WT3G
10000/Tape
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sot23 marking y5
Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
Text: SOT-23 TRANSISTORS & DIODES PRODUCT LIST AND DEVICE IDENTIFICATION DIODES DIODES Device Type Device Type Device marking Device marking BAL99 E2 BZX84-C43 X6 BAR99 E3 BZX84-C47 X7 BAS16 A3 FMMD914 5D BAV70 A4 FMMD6050 5A BAV74 JA BAV99 A7 BAW56 A1 HD2A 5D HD3A
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OT-23
BAL99
BZX84-C43
BAR99
BZX84-C47
BAS16
FMMD914
BAV70
FMMD6050
BAV74
sot23 marking y5
BZX84C18
FMMD914
FMMD6050
BZX84-C27
BAR99
MARKING W4 sot 23
C3V9
C5V1
c5v6
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Untitled
Abstract: No abstract text available
Text: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1815 2 1 3 MARKING A4 SOT-113 1:EMITTER 2:BASE 3: COLLECTOR
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MMBT1015
150mA
MMBT1815
OT-113
QW-R210-003
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Untitled
Abstract: No abstract text available
Text: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1815 2 1 3 MARKING A4 SOT-23 1:EMITTER 2:BASE 3: COLLECTOR
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MMBT1015
150mA
MMBT1815
OT-23
QW-R206-015
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Untitled
Abstract: No abstract text available
Text: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1815 2 1 3 MARKING A4 SOT-113 1:EMITTER 2:BASE 3: COLLECTOR
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MMBT1015
150mA
MMBT1815
OT-113
QW-R210-003
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marking a4 sot-23
Abstract: MMBT1815 MMBT1015
Text: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1815 2 1 3 MARKING A4 SOT-23 1:EMITTER 2:BASE 3: COLLECTOR
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Original
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MMBT1015
150mA
MMBT1815
OT-23
QW-R206-015
marking a4 sot-23
MMBT1815
MMBT1015
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PDF
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MMBT1015
Abstract: marking a4 sot-23
Text: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MBT1815 2 1 3 MARKING A4 SOT-23 1:EMITTER 2:BASE 3: COLLECTOR
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MMBT1015
150mA
MBT1815
OT-23
QW-R206-015
MMBT1015
marking a4 sot-23
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DSAFG01
Abstract: No abstract text available
Text: DSAFG01 Tentative page Total pages DSAFG01 Silicon PNP epitaxial planar type For High-frequency Amplifier Marking Symbol A4 Package Code : ML3-N4-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DSAFG01
DSAFG01
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DSA4G01
Abstract: No abstract text available
Text: DSA4G01 Tentative Total pages page DSA4G01 Silicon PNP epitaxial planar type For High-frequency Amplifier Marking Symbol A4 Package Code : NS-B1-B-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DSA4G01
DSA4G01
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Untitled
Abstract: No abstract text available
Text: DSA3G01 Silicon PNP epitaxial planar type Unit: mm For high-frequency amplification DSA9G01 in SSSMini3 type package • Features High transition frequency fT Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: A4
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DSA3G01
DSA9G01
UL-94
DSA3G0100L
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Untitled
Abstract: No abstract text available
Text: DSA3G01 Silicon PNP epitaxial planar type Unit: mm For high-frequency amplification DSA9G01 in SSSMini3 type package • Features High transition frequency fT Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: A4
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DSA3G01
DSA9G01
UL-94
DSA3G0100L
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Untitled
Abstract: No abstract text available
Text: DSA9G01 Silicon NPN epitaxial planar type For high-frequency amplification DSA5G01 in SSMini3 type package Unit: mm • Features High transition frequency fT Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: A4
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DSA9G01
DSA5G01
UL-94
DSA9G01Ã
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Untitled
Abstract: No abstract text available
Text: DSA5G01 Silicon PNP epitaxial planar type For high-frequency amplification DSA2G01 in SMini3 type package Unit: mm • Features High transition frequency fT Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: A4
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DSA5G01
DSA2G01
UL-94
DSA5G01Ã
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Untitled
Abstract: No abstract text available
Text: DSA2G01 Silicon PNP epitaxial planar type Unit: mm For high-frequency amplification • Features High transition frequency fT Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: A4 Packaging DSA2G01x0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
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DSA2G01
UL-94
DSA2G01Ã
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DTA114T
Abstract: T110 T148
Text: EMA4 / UMA4N / EMB4 / UMB4N / UMB8N / FMA4A / IMB4A Transistors General purpose dual digital transistors EMA4 / UMA4N / EMB4 / UMB4N / UMB8N / FMA4A / IMB4A !Feature 1) Two DTA114T chips in a EMT or UMT or SMT package. !Equivalent circuits EMA4 / UMA4N (3)
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DTA114T
SC-88
SC-74
SC-74A
T110
T148
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marking a4
Abstract: DTA114T T108 T110 T148 marking B8 FMA4 marking a4 transistors
Text: EMA4 / UMA4N / EMB4 / UMB4N / UMB8N / FMA4A / IMB4A / IMB8A Transistors General purpose dual digital transistors EMA4 / UMA4N / EMB4 / UMB4N / UMB8N / FMA4A / IMB4A / IMB8A !Features 1) Two DTA114T chips in a EMT or UMT or SMT package. !Equivalent circuit
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DTA114T
SC-88
SC-74
SC-74A
marking a4
T108
T110
T148
marking B8
FMA4
marking a4 transistors
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TN3000
Abstract: MARKING A4 transistor MARKING T108 inverter ic marking H.A SMT6 T108 G7 marking Code marking tA2 marking a4 transistors
Text: UMA4N / UMB4N / UMB8N / FMA4A / IMB4A / IMB8A UMG4N / UMG7N / UMH4N / UMH8N / FMG4A / FMG7A / IMH4A / IMH8A Transistors I Digital Transistor Duai Digital Transistors for Inverter Driver UMA4N / UMB4N / UMB8N / FMA4A / IMB4A / IMB8A •Features 1 ) Two DTA114T transistors are housed in a UMT or SMT package.
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120mW
DTA114T
96-411-C114T)
TN3000
MARKING A4 transistor
MARKING T108
inverter ic marking H.A
SMT6 T108
G7 marking Code
marking tA2
marking a4 transistors
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"MARKING CODE A4"
Abstract: DTA114T T148
Text: EMA4 / UMA4N / FMA4A Transistors General purpose dual digital transistors EMA4 / UMA4N / FMA4A zExternal dimensions (Unit : mm) zFeature 1) Two DTA114T chips in a EMT or UMT or SMT package. zEquivalent circuits 0.5 0.13 (5) R1 R1 R1 (4) (5) (2) (1) Each lead has same dimensions
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DTA114T
"MARKING CODE A4"
T148
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Untitled
Abstract: No abstract text available
Text: EMA4 / UMA4N / EMB4 / UMB4N / UMB8N / FMA4A / IMB4A Transistors General purpose dual digital transistors EMA4 / UMA4N / EMB4 / UMB4N / UMB8N / FMA4A / IMB4A !Feature 1) Two DTA114T chips in a EMT or UMT or SMT package. !Equivalent circuits EMA4 / UMA4N (3)
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DTA114T
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atk63
Abstract: 4N28 4n26 example circuit 4N26 4N25 applications optocoupler 4N25
Text: 4N25/ 4N26/ 4N27/ 4N28 VISHAY Vishay Telefun ken Y Optocoupler with Phototransistor Output Description The 4N25/ 4N26/ 4N27/ 4N28 consist of a photo transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual-inline
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E-76222
11-Ja
atk63
4N28
4n26 example circuit
4N26
4N25 applications
optocoupler 4N25
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CNY70
Abstract: sensor cny70 ir sensing circuit using CNY70
Text: CNY70 Vishay Telefunken Reflective Optical Sensor with Transistor Output Description The CNY70 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object.
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CNY70
CNY70
D-74025
sensor cny70
ir sensing circuit using CNY70
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CNY70
Abstract: sensor cny70 ir sensing circuit using CNY70 CNY70 DATASHEET
Text: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description The CNY70 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object.
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CNY70
CNY70
D-74025
sensor cny70
ir sensing circuit using CNY70
CNY70 DATASHEET
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marking CJD
Abstract: A6 marking MRF947t1 marking 6B
Text: SC-70/SQT-323 Devices_ Maximum die size 20 mil x 20 mil CASE 419-02 RF Transistors Maximum Ratings Gain-Bandwldth NF @ <§ Device t f Gain @ Marking h Typ GHz lc mA Typ dB MHz Typ dB MHz A H B 8 8 8 15 15 30 2.1 2.1 2.0 1500 1500 1500 10.5 10.5
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SC-70/SQT-323
MRF947T1
MRF947BT1
MRF957T1
MUN5211T1
MUNS212T1
MUN5213T1
MUN5214T1
MUN5111T1
MUN5112T1
marking CJD
A6 marking
marking 6B
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ir sensing circuit using CNY70
Abstract: sensor cny70
Text: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Description The CNY70 has a compact construction where the emitting light source and the detector are arranged in the same direction to sense the presence of an object by using the reflective IR beam from the object.
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CNY70
CNY70
08-Apr-05
ir sensing circuit using CNY70
sensor cny70
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