BOP 286
Abstract: ATS266 BRUSHLESS DC MOTOR an 132 hall sensor
Text: ATS266 High Voltage Hall Effect Latch Features General Description - On-chip Hall plate - Operating voltage: 4V~28V - Output current: 400mA Continuous - Reverse protection diode only for chip reverse power connecting (Note) - Output protection Zener breakdown Vz=56V(Typ)
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ATS266
400mA
ATS266
BOP 286
BRUSHLESS DC MOTOR
an 132 hall sensor
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MA6 diode
Abstract: LMBD2838LT1G
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE LMBD2837LT1G LMBD2838LT1G z We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping A5 3000/Tape&Reel LMBD2837LT3G A5 10000/Tape&Reel
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LMBD2837LT1G
LMBD2838LT1G
3000/Tape
LMBD2837LT3G
10000/Tape
LMBD2838LT3G
MA6 diode
LMBD2838LT1G
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MA6 diode
Abstract: LMBD2838LT1G LMBD2837LT1G rr 100 ma6 12
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE LMBD2837LT1G LMBD2838LT1G z We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping A5 3000/Tape&Reel LMBD2837LT3G A5 10000/Tape&Reel
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LMBD2837LT1G
LMBD2838LT1G
3000/Tape
LMBD2837LT3G
10000/Tape
LMBD2838LT3G
MA6 diode
LMBD2838LT1G
LMBD2837LT1G
rr 100
ma6 12
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MA6 diode
Abstract: diode G21 LMBD2838LT1 DIODE a5 g21 Transistor lt1 switch LMBD2837LT1 LMBD2837LT1G LMBD2838LT1G a5 marking
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE LMBD2837LT1 LMBD2838LT1 • Pb-Free Package is available. ORDERING INFORMATION Device Marking Shipping A5 3000/Tape&Reel A5 Pb-Free 3000/Tape&Reel LMBD2837LT1 LMBD2837LT1G LMBD2838LT1 LMBD2838LT1G
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LMBD2837LT1
LMBD2838LT1
3000/Tape
LMBD2837LT1G
LMBD2838LT1G
MA6 diode
diode G21
LMBD2838LT1
DIODE a5
g21 Transistor
lt1 switch
LMBD2837LT1
LMBD2837LT1G
LMBD2838LT1G
a5 marking
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LMBD2838LT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes LMBD2837LT1G S-LMBD2837LT1G LMBD2838LT1G S-LMBD2838LT1G FEATURE z We declare that the material of product compliance with RoHS requirements. z S- Prefix for Automotive and Other Applications Requiring
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LMBD2837LT1G
S-LMBD2837LT1G
LMBD2838LT1G
S-LMBD2838LT1G
AEC-Q101
3000/Tape
LMBD2837LT3G
10000/Tape
LMBD2838LT1G
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GSOT15HT3
Abstract: diode MARKING CODE A9
Text: GSOT03-HT3 to GSOT36-HT3 VISHAY Vishay Semiconductors ESD Protection Diode Features • Transient protection for data lines as per IEC 61000-4-2 ESD 15 kV (air) 8 kV (contact) IEC 61000-4-5 (Lightning) see IPPM below • Space saving LLP package 3 Top view
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GSOT03-HT3
GSOT36-HT3
LLP75-3B
GSOT04-HT3
GSOT05-HT3
GSOT08-HT3
GSOT12-HT3
GSOT15-HT3
GSOT24-HT3
GSOT15HT3
diode MARKING CODE A9
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diode MARKING A9
Abstract: diode MARKING CODE A9 GSOT03-HT3 GSOT04-HT3 GSOT05-HT3 GSOT08-HT3
Text: GSOT03-HT3 to GSOT36-HT3 Vishay Semiconductors ESD Protection Diode Features • Transient protection for data lines as per IEC 61000-4-2 ESD 15 kV (air) 8 kV (cone3 tact) IEC 61000-4-5 (Lightning) see IPPM below • Space saving LLP package • Lead (Pb)-free component
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GSOT03-HT3
GSOT36-HT3
2002/95/EC
2002/96/EC
LLP75-3B
GSOT03-HT3
GSOT03-HT3-GS08
GSOT04-HT3
GSOT04-HT3-GS08
D-74025
diode MARKING A9
diode MARKING CODE A9
GSOT04-HT3
GSOT05-HT3
GSOT08-HT3
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A2 DIODE
Abstract: DIODE 40c 0644 A5 DIODE MONOLITHIC DIODE ARRAYS marking Z4 TVS 200 diode 63-37 A4 marking diode C 12 PH diode DIODE marking A2
Text: TVS Diode Arrays TVS Avalanche Diode Array in a Unipolar Chip Scale Package SP0504BAC, SP0508BAC, SP0516BAC This family of avalanche diode arrays are designed for ESD protection and offered in an ultra small chip scale package. The multi-channel devices are used to help protect sensitive digital or
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SP0504BAC,
SP0508BAC,
SP0516BAC
178mm
A2 DIODE
DIODE 40c 0644
A5 DIODE
MONOLITHIC DIODE ARRAYS
marking Z4
TVS 200 diode
63-37
A4 marking diode
C 12 PH diode
DIODE marking A2
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE LMBD2837LT1G LMBD2838LT1G • Pb-Free Package is available. ORDERING INFORMATION Device Marking Shipping A5 3000/Tape&Reel LMBD2837LT3G A5 10000/Tape&Reel LMBD2838LT1G MA6 3000/Tape&Reel LMBD2838LT3G
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LMBD2837LT1G
LMBD2838LT1G
3000/Tape
LMBD2837LT3G
10000/Tape
LMBD2838LT3G
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TCET110G
Abstract: pin diagram of IC 7402 tcet1103
Text: TCET110. G up to TCET4100 Vishay Telefunken Optocoupler with Phototransistor Output Description The TCET110./ TCET2100/ TCET4100 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.
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TCET110.
TCET4100
TCET110
TCET2100/
TCET4100
16-lead
TCET110G
pin diagram of IC 7402
tcet1103
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diode marking b2
Abstract: DIODE B2 DIODE MARKING B4 DIODE marking A2 diode MARKING b3 A2 diode A4 marking diode top side marking b2 diode array MARKING A3 esd diode a2
Text: TVS Diode Arrays TVS Avalanche Diode Array in a Bipolar Chip Scale Package SP0504BBC, SP0508BBC, SP0516BBC This family of avalanche diode arrays are designed for ESD protection and offered in an ultra small chip scale package. The multi-channel devices are used to help protect sensitive digital or analog input circuits
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SP0504BBC,
SP0508BBC,
SP0516BBC
178mm
diode marking b2
DIODE B2
DIODE MARKING B4
DIODE marking A2
diode MARKING b3
A2 diode
A4 marking diode
top side marking b2
diode array MARKING A3
esd diode a2
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Untitled
Abstract: No abstract text available
Text: BZT52B2V0 Series Surface Mount Zener Diodes P b Lead Pb -Free SMALL SIGNAL ZENER DIODES 500m WATTS Features: *500mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.0V to 36V 1 Mechanical Data: *Case : SOD-123 Molded plastic
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BZT52B2V0
500mw
OD-123
MIL-STD-202,
01grams
OD-123
25-Sep-09
BZT52B24
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a5 marking
Abstract: No abstract text available
Text: GSOT05 - HT3 VISHAY Vishay Semiconductors ESD Protection Diode Features 3 • Transient protection for data lines as per IEC 61000-4-2 ESD 15 kV (air) 8 kV (contact) IEC 61000-4-5 (Lightning) 17 A (tp = 8/ 20 µs) • Space saving LiLiPut package Top view
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GSOT05
LLP75-3B
GSOT05-HT3
GSOT05-HT3-GS08
D-74025
18-Jul-03
a5 marking
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Untitled
Abstract: No abstract text available
Text: GSOT05 - HT3 VISHAY Vishay Semiconductors ESD Protection Diode Features 3 • Transient protection for data lines as per IEC 61000-4-2 ESD 15 kV (air) 8 kV (contact) IEC 61000-4-5 (Lightning) 17 A (tp = 8/ 20 µs) • Space saving LLP package Top view 1
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GSOT05
LLP75-3B
GSOT05-HT3
GSOT05-HT3-GS08
D-74025
11-Sep-03
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GSOT05
Abstract: GSOT05-HT3 GSOT05-HT3-GS08
Text: GSOT05 - HT3 VISHAY Vishay Semiconductors ESD Protection Diode Features 3 • Transient protection for data lines as per IEC 61000-4-2 ESD 15 kV (air) 8 kV (contact) IEC 61000-4-5 (Lightning) 7 A (tp = 8/ 20 µs) • Space saving LiLiPut package Top view
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GSOT05
LLP75-3B
GSOT05-HT3
GSOT05-HT3-GS08
D-74025
02-Jun-03
GSOT05-HT3
GSOT05-HT3-GS08
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Surface Mount Zener Diodes LBZT52B2V0T1G Series Features: *500mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.0V to 36V *Pb-Free package is available 1 2 Mechanical Data: SOD-123 *Case : SOD-123 Molded plastic
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LBZT52B2V0T1G
500mw
OD-123
OD-123
MIL-STD-202,
01grams
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K3020P
Abstract: phototransistor microwaves K3021P K3021PG K3022P K3023P
Text: K3020P G Series Vishay Telefunken Optocoupler with Phototriac Output Description The K3020P(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a
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K3020P
D-74025
phototransistor microwaves
K3021P
K3021PG
K3022P
K3023P
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LBZT52B18T1G
Abstract: LBZT52B5V1T1G LBZT52 LBZT52B LBZT52B3V3T1G LBZT52B4V3T1G LBZT52B27T1G lbzt52b15t1g LBZT52B16T1G LBZT52B2V7T1G
Text: LESHAN RADIO COMPANY, LTD. LBZT52B2V0T1G Series Surface Mount Zener Diodes Features: *500mw Power Dissipation *Ideal for Surface Mountted Application *Zener Breakdown Voltage Range 2.0V to 36V *Pb-Free package is available 1 2 Mechanical Data: SOD-123 *Case : SOD-123 Molded plastic
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LBZT52B2V0T1G
500mw
OD-123
OD-123
MIL-STD-202,
01grams
LBZT52B18T1G
LBZT52B5V1T1G
LBZT52
LBZT52B
LBZT52B3V3T1G
LBZT52B4V3T1G
LBZT52B27T1G
lbzt52b15t1g
LBZT52B16T1G
LBZT52B2V7T1G
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47-6 k5 diode
Abstract: zener diode t5 564 marking 6 pin zener 3.3 zener marking S5 47-6 k5 zener
Text: MM5Z2V4CF THRU MM5Z75VCF REVERSE VOLTAGE – 2.4 to 75 Volts POWER DISSIPATION – 0.2 Watts SURFACE MOUNT ZENER DIODE FEATURES • Wide Zener Voltage Range Selection, 2.4V to 75V • Flat Lead SOD-523F Small Outline Plastic Package • Extremely Small SOD-523F Package
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MM5Z75VCF
OD-523F
OD-523F
47-6 k5 diode
zener diode t5
564 marking 6 pin
zener 3.3
zener marking S5
47-6 k5 zener
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zener u5
Abstract: 47-6 k5 diode 564 marking 6 pin
Text: MM5Z2V4CF THRU MM5Z75VCF REVERSE VOLTAGE – 2.4 to 75 Volts POWER DISSIPATION – 0.2 Watts SURFACE MOUNT ZENER DIODE FEATURES • Wide Zener Voltage Range Selection, 2.4V to 75V •The Vz tolerance is 2%. • Flat Lead SOD-523F Small Outline Plastic Package
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MM5Z75VCF
OD-523F
OD-523F
zener u5
47-6 k5 diode
564 marking 6 pin
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SOT-23 MARKING M5C
Abstract: No abstract text available
Text: SOT-23 DIODES STYLE 9 STYLE 12 3 30- 3i -o -W - 1 SINGLE COMMON CATHODE COMMON ANODE Switching Diodes -O STYLE 11 2 30- 1 -0 2 STYLE 8 STYLE 19 2 SINGLE 3 SERIES General-Purpose Diodes 3 SERIES STYLE 18 The following is a listing of small-signal switching diodes in surface mount packages. These diodes are Intended for low current
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OCR Scan
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OT-23
30SINGLE
BAS21LT1
MMBD914LT1
BAS16LT1
MMBD6050LT1
BAL99LT1
MMBD701LT1
MMBD301LT1
MMBD101LT1
SOT-23 MARKING M5C
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MMBD501
Abstract: MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MMBD2837 MBAS16 MBAV70
Text: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Switching Diodes (Dual Unless Otherwise Noted) Diode Pinout: Noted Below Device Marking MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD914 MBAS16 MBAL99 MMBD6050 MBAV99 MMBD7000 A2
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OT-23
OT-23
MMBD2836
MBAW56
MMBD2835
MBAV74
MMBD2838
MBAV70
MMBD2837
MMBD6100
MMBD501
MMBV2098
MBAV99
A5 sot-23 single DIODE
MMBV105G
MMBV2097
A5 sot-23 DIODE
MBAS16
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Diode 5A
Abstract: bkd marking TMPD4148 TMPD2835 TMPD2837 TMPD2838 TMPD4150 TMPD4153 TMPD4154 TMPD459
Text: AL LE GR O M I C R O S Y S T E M S 8 5 1 4 0 1 9 SP RA GU E. INC T3 D • DSGM33Ô S E M I C O N D S / ICS 0GD3b5? 93 D 0 3 6 2 7 1 *ALGR V T'Q / ~ 9 0 SMALL-OUTLINE DIODES j ‘TMPD’ General-Purpose and Low-Leakage Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C
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DSGM33Ã
TMPD459
TMPD914
TMPD2835
TMP02836
TMPD2837
TMPD2838
TMPD4148
TMPD4153
TMPD4154
Diode 5A
bkd marking
TMPD4150
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TCET110G
Abstract: No abstract text available
Text: TCET110. G up to TCET4100 Vishay Telefunken Optocoupler with Phototransistor Output Description TheTCETHO./ TCET2100/TCET4100 consists of a phototransistor optically coupled to a gallium arse nide infrared-emitting diode in a 4-lead up to 16-lead plastic dual inline package.
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OCR Scan
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PDF
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TCET110.
TCET4100
TCET2100/TCET4100
16-lead
11-Ja
TCET2100
TCET4100
TCET110G
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