transistor af 126
Abstract: JESD22-B-107-A J-STD-029 mount chip transistor 332
Text: V•I Chip – BCM Bus Converter Module TM B048K120T20 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 17.0 A K = 1/4 Rout = 25 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 200 Watt 300 Watt for 1 mS • 125°C operation • High density – up to 800 W/in3
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B048K120T20
7/03/10M
transistor af 126
JESD22-B-107-A
J-STD-029
mount chip transistor 332
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JESD22-A-103A
Abstract: jesd22-a-104B JESD22 A-102 JESD22-A-101 JESD22-B-107-A converter 48 to 24 switching
Text: PRELIMINARY V•I Chip Bus Converter Module BCM V•I Chip – BCM Bus Converter Module TM B048K480T30 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 48 V V•I Chip Converter • Typical efficiency 96% • 300 Watt 450 Watt for 1 ms
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B048K480T30
JESD22-A-103A
jesd22-a-104B
JESD22 A-102
JESD22-A-101
JESD22-B-107-A
converter 48 to 24 switching
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48V-to-12V
Abstract: smd TRANSISTOR marking T1
Text: V•I Chip – BCM Bus Converter Module TM B048K120T15 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 12.5 A K = 1/4 Rout = 32 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 150 Watt 225 Watt for 1 ms • 125°C operation • High density – up to 600 W/in3
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B048K120T15
11/03/10M
48V-to-12V
smd TRANSISTOR marking T1
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Untitled
Abstract: No abstract text available
Text: V•I Chip – BCM Bus Converter Module TM B048K120T20 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 17.0 A K = 1/4 Rout = 25 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 200 Watt 300 Watt for 1 mS • 125°C operation • High density – up to 800 W/in3
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B048K120T20
8/03/10M
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JESD22-A-103A
Abstract: JESD22-A-104B JESD22-A113-B JESD22-B-107-A V048K480T006 337 BGA footprint
Text: PRELIMINARY VTM V048K480T006 V•I Chip – VTM Voltage Transformation Module TM • 48 V to 48 V V•I Chip Converter • 125°C operation • 6.3 A 9.4 A for 1 ms • 1 µs transient response • High density – 1218 W/in3 K indicates BGA configuration. For other
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V048K480T006
V048K480T006
JESD22-A-103A
JESD22-A-104B
JESD22-A113-B
JESD22-B-107-A
337 BGA footprint
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IPC-9701
Abstract: JESD22-A-101
Text: PRELIMINARY V•I Chip Voltage Transformation Module BCM V•I Chip – BCM Bus Converter Module TM B048K120T30 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 12 V V•I Chip Converter • 96% efficiency • 300 Watt 450 Watt for 1 ms
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B048K120T30
IPC-9701
JESD22-A-101
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BCM reflow
Abstract: smd transistor marking SG smd transistor v2 IPC-9701
Text: V•I Chip – BCM Bus Converter Module TM B048K120T10 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 8.3 A K = 1/4 Rout = 32 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 100 Watt 150 Watt for 1 ms • 125°C operation • High density – up to 400 W/in3
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B048K120T10
11/03/10M
BCM reflow
smd transistor marking SG
smd transistor v2
IPC-9701
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Untitled
Abstract: No abstract text available
Text: V•I Chip – BCM Bus Converter Module TM B048K120T20 + + –K – • >96% efficiency • 200 Watt 300 Watt for 1 ms • 125°C operation • High density – up to 800 W/in3 • 1 µs transient response • Small footprint – 200 W/in • >3.5 million hours MTBF
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B048K120T20
02/04/10M
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IPC-9701
Abstract: F17a
Text: PRELIMINARY V•I Chip Bus Converter Module BCM V•I Chip – BCM Bus Converter Module TM B048K160T24 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 16 V V•I Chip Converter • Typical efficiency 96% • 240 Watt 360 Watt for 1 ms
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B048K160T24
IPC-9701
F17a
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JESD22-A-101
Abstract: JESD22-A-103A JESD22-A-104B JESD22-A113-B JESD22-B-107-A V048K060T040
Text: PRELIMINARY VTM V048K060T040 V•I Chip – VTM Voltage Transformation Module TM • 48 V to 6 V V•I Chip Converter • 125°C operation • 40.0 A 60.0 A for 1 ms • 1 µs transient response • High density – 974 W/in3 K indicates BGA configuration. For other
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V048K060T040
V048K060T040
JESD22-A-101
JESD22-A-103A
JESD22-A-104B
JESD22-A113-B
JESD22-B-107-A
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JESD22-A-103A
Abstract: JESD22-A-104B JESD22-A113-B JESD22-B-107-A V048K096T025 JESD22-B107 JESD22-B107-A AE3A
Text: PRELIMINARY VTM V048K096T025 V•I Chip – VTM Voltage Transformation Module TM • 48 V to 9.6 V V•I Chip Converter • 125°C operation • 25.0 A 37.5 A for 1 ms • 1 µs transient response • High density – 974 W/in3 K indicates BGA configuration. For other
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V048K096T025
V048K096T025
JESD22-A-103A
JESD22-A-104B
JESD22-A113-B
JESD22-B-107-A
JESD22-B107
JESD22-B107-A
AE3A
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JESD22-A-103A
Abstract: JESD22-A-104B JESD22-A113-B JESD22-B-107-A V048K030T070 smd diode marking sG
Text: PRELIMINARY VTM V048K030T070 V•I Chip – VTM Voltage Transformation Module TM • 48 V to 3 V V•I Chip Converter • 125°C operation • 70 A 105 A for 1 ms • 1 µs transient response • High density – 284 A/in3 K indicates BGA configuration. For other
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V048K030T070
V048K030T070
JESD22-A-103A
JESD22-A-104B
JESD22-A113-B
JESD22-B-107-A
smd diode marking sG
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SMD capacitor 106c
Abstract: capacitor SMD 106C JESD22-A-101
Text: PRELIMINARY V•I Chip Bus Converter Module BCM V•I Chip – BCM Bus Converter Module TM B048K096T24 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 9.6 V V•I Chip Converter • Typical efficiency 96% • 240 Watt 360 Watt for 1 ms
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B048K096T24
SMD capacitor 106c
capacitor SMD 106C
JESD22-A-101
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Untitled
Abstract: No abstract text available
Text: V•I Chip – BCM Bus Converter Module TM B048K120T20 Vin = 42 - 53 V Vout = 10.5 - 13.25 V Iout = 17.0 A K = 1/4 Rout = 25 mΩ max • 48V to 12V V•I Chip Converter • >96% efficiency • 200 Watt 300 Watt for 1 mS • 125°C operation • High density – up to 800 W/in3
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B048K120T20
7/03/10M
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IPC-9701
Abstract: No abstract text available
Text: VTM V•I Chip – VTM Voltage Transformation Module TM • 48 V to 2 V V•I Chip Converter • 125°C operation • 80 A 120 A for 1 ms • 1 µs transient response V048K020T080 K indicates BGA configuration. For other mounting options see Part Numbering below.
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V048K020T080
V048K020T080
10/04/10M
IPC-9701
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337 BGA footprint
Abstract: IPC 9701
Text: PRELIMINARY VTM V048K480T006 V•I Chip – VTM Voltage Transformation Module TM • 48 V to 48 V V•I Chip Converter • 125°C operation • 6.3 A 9.4 A for 1 ms • 1 µs transient response • High density – 1218 W/in3 K indicates BGA configuration. For other
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V048K480T006
V048K480T006
337 BGA footprint
IPC 9701
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A3G3
Abstract: No abstract text available
Text: PRELIMINARY V•I Chip Bus Converter Module BCM V•I Chip – BCM Bus Converter Module TM B048K030T21 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 3 V V•I Chip Converter • 94% efficiency • 210 Watt 315 Watt for 1 ms
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B048K030T21
A3G3
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JESD22-A-103A
Abstract: JESD22-A-104B JESD22-A113-B JESD22-B-107-A V048K160T015 JESD22-B107
Text: PRELIMINARY VTM V048K160T015 V•I Chip – VTM Voltage Transformation Module TM • 48 V to 16 V V•I Chip Converter • 125°C operation • 15.0 A 22.5 A for 1 ms • 1 µs transient response • High density – 974 W/in3 K indicates BGA configuration. For other
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V048K160T015
V048K160T015
JESD22-A-103A
JESD22-A-104B
JESD22-A113-B
JESD22-B-107-A
JESD22-B107
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JESD22-A-103A
Abstract: JESD22-A-104B JESD22-A113-B JESD22-B-107-A V048K120T025
Text: PRELIMINARY VTM V048K120T025 V•I Chip – VTM Voltage Transformation Module TM • 48 V to 12 V V•I Chip Converter • 125°C operation • 25 A 37.5 A for 1 ms • 1 µs transient response • High density – 1200 W/in3 K indicates BGA configuration. For other
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V048K120T025
V048K120T025
JESD22-A-103A
JESD22-A-104B
JESD22-A113-B
JESD22-B-107-A
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Untitled
Abstract: No abstract text available
Text: V•I Chip – BCM Bus Converter Module TM B048K096T24 + + –K – • >96% efficiency • 240 Watt 360 Watt for 1 ms • 125°C operation • High density – up to 960 W/in3 • <1 µs transient response • Small footprint – 240 W/in • >3.5 million hours MTBF
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B048K096T24
02/04/10M
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY V•I Chip Bus Converter Module BCM V•I Chip – BCM Bus Converter Module TM B048K160T24 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 16 V V•I Chip Converter • Typical efficiency 96% • 240 Watt 360 Watt for 1 ms
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B048K160T24
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JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE AND
Abstract: No abstract text available
Text: V•I Chip – BCM Bus Converter Module TM B048K480T30 + + –K – • >97% efficiency • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1165 W/in3 • <1 µs transient response • Small footprint – 280 W/in • >3.5 million hours MTBF
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B048K480T30
P/N27688
07/04/10M
JESD22-A110-B HIGHLY ACCELERATED TEMPERATURE AND
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IPC 9701
Abstract: transistor marking JB
Text: BCM V•I Chip – BCM Bus Converter Module TM B048K480T30 K indicates BGA configuration. For other mounting options see Part Numbering below. • 48 V to 48 V V•I Chip Converter • >97% efficiency • 300 Watt 450 Watt for 1 ms • 125°C operation + +
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B048K480T30
P/N27688
10/04/10M
IPC 9701
transistor marking JB
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JESD22-A-103A
Abstract: JESD22-A-104B JESD22-A113-B V048K020T080 JESD22-A108B
Text: VTM V•I Chip – VTM Voltage Transformation Module TM • 48 V to 2 V V•I Chip Converter • 125°C operation • 80 A 120 A for 1 ms • 1 µs transient response V048K020T080 K indicates BGA configuration. For other mounting options see Part Numbering below.
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V048K020T080
V048K020T080
09/04/10M
JESD22-A-103A
JESD22-A-104B
JESD22-A113-B
JESD22-A108B
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