BY228ph
Abstract: BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes Supersedes data of 2004 Apr 27 2004 Jun 11 Philips Semiconductors Product specification Power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE PACKAGE TYPE NUMBER MARKING CODE PACKAGE
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1N4001G
1N4001
BY8106
OD61AD
1N4002G
1N4002
BY8108
OD61AE
1N4003G
1N4003
BY228ph
BYV26E PH
1N5062 ph
BY228 PH
1N4007 sod87
za109ts
BYW95C PH
BYR245
sj 1a0
SOD87 1N4007
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PH 33D
Abstract: PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Marking codes TYPE NUMBER TO MARKING CODE MARKING CODE PACKAGE BY558 BY558 PH SOD115 SOD57 BY578 BY578 PH SOD115 SOD57 BY584 orange SOD61A 1N4004 PH SOD57 BY614
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BY558
BY558
OD115
BY578
BY578
BY584
OD61A
1N4004
BY614
PH 33D
PH 33G
BYW95C PH
BYM26C PH
BYV26E PH
BYW96E PH
BYV96E ph
33D-PH
33d ph
V10-40
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smd k72 y5
Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR
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1N4148W
1N4148WX
1N4148X
1N4448W
1N4448WX
1N4448X
1N914W
1SS181
1SS184
1SS193
smd k72 y5
K72 y8
k72 y4
BAS70WT
46A gez
SMBJ8.5CA
SMBJ11CA
SMD Marking K72
sk 75 dgm
marking f5 sot-89
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smd j3y
Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O
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1N4148W
1N4148WX
1N4148X
1N4448W
1N4448WX
1N4448X
1N914W
1SS181
1SS184
1SS193
smd j3y
SOT89 MARKING CODE
SMD MARKING CODE j3y
SOT-23 J3Y
j3y smd
smd code marking wl sot23
k72 sot-23
marking f5 sot-89
smd 2TY
SOT-23 MARKING ka6
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MINI-MELF DIODE markings
Abstract: No abstract text available
Text: BAQ33, BAQ34, BAQ35 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current FEATURES • Silicon planar diodes • Very low reverse current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
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BAQ33,
BAQ34,
BAQ35
OD-80
GS18/10K
10K/box
10K/box
BAQ33
BAQ34
MINI-MELF DIODE markings
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Untitled
Abstract: No abstract text available
Text: BAQ33, BAQ34, BAQ35 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current FEATURES • Silicon planar diodes • Very low reverse current • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
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BAQ33,
BAQ34,
BAQ35
OD-80
GS18/10K
10K/box
BAQ33
BAQ33-GS18
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PDF
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Untitled
Abstract: No abstract text available
Text: BAQ133, BAQ134, BAQ135 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current FEATURES • Silicon planar diodes • Very low reverse current • Material categorization: For definitions of compliance www.vishay.com/doc?99912
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BAQ133,
BAQ134,
BAQ135
OD-80
GS18/10K
10K/box
GS08/2
BAQ133
2002/95/EC.
2002/95/EC
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PDF
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Untitled
Abstract: No abstract text available
Text: BAQ133, BAQ134, BAQ135 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current FEATURES • Silicon planar diodes • Very low reverse current • Material categorization: For definitions of compliance www.vishay.com/doc?99912
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Original
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BAQ133,
BAQ134,
BAQ135
OD-80
GS18/10K
10K/box
GS08/2
BAQ133
2011/65/EU
2002/95/EC.
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PDF
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Untitled
Abstract: No abstract text available
Text: BAQ133, BAQ134, BAQ135 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current FEATURES • Silicon planar diodes • Very low reverse current • Material categorization: For definitions of compliance www.vishay.com/doc?99912
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BAQ133,
BAQ134,
BAQ135
OD-80
GS18/10K
10K/box
GS08/2
BAQ133
BAQ134
BAQ135
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PDF
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BAQ806
Abstract: diode 1407 diode 104
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 BAQ806 AM PIN diode Product specification File under Discrete Semiconductors, SC10 1998 Aug 03 Philips Semiconductors Product specification AM PIN diode BAQ806 FEATURES DESCRIPTION • Glass passivated
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M3D168
BAQ806
DO-214AC
SCA60
115104/00/01/pp12
BAQ806
diode 1407
diode 104
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PDF
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Philips diode
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET k, halfpage M3D119 BAQ800 AM PIN diode Product specification File under Discrete Semiconductors, SC01 1997 Aug 26 Philips Semiconductors Product specification AM PIN diode BAQ800 FEATURES DESCRIPTION • Glass passivated
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M3D119
BAQ800
MAM123
frequenci31
SCA55
117027/1200/01/pp12
Philips diode
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PDF
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bq 8050
Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
Text: 目 录 CONTENTS Page 产品索引(按字母顺序) ALPHANUMERIC INDEX A 产品目录表(按电性能) TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管
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OD-123
OD-123
OD-323
OD-323
OD-523
OD-523
OT-23
OT-23
OT-323
OT-323
bq 8050
HF S4 13003
F6 13003
bL78L05
HF 13003
bq d882
2SC945
KJG BAV99
WG 13003
2SC945 AQ
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PDF
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marking code VV transistors
Abstract: No abstract text available
Text: WILLAS FM120-M+ 2SB1132THRU FM1200-M+ SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features TRANSISTOR PNP design, excellent power dissipation offers • Batch process
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OT-89
OD-123+
060TYP
M180-MH
FM1100-MH
FM1150-MH
FM1200-MH
FM120-MH
FM130-MH
FM140-MH
marking code VV transistors
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PDF
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Transistor S8550 2TY
Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250
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OD-123
1N4148W
1N4448W
1N5711W*
1N6263W*
B0520LW
B0530W
B0540W
B5817W
B5818W
Transistor S8550 2TY
Schottky barrier sot-23 Marking s4
sk 8050s
KL4 SOT-23
d882 to-92
BR S8050
bq d882
transistor D882 datasheet
S8050 equivalent
PCR100-6
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PDF
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ph 4148 zener diode
Abstract: ka6 transistor smd Marking Code SMD databook melf diodes color code 4148 TRANSISTOR SMD MARKING CODE w2 GLUE IR-130 smd diode sod-323 marking code L2 smd diode marking 5d SOD-323 SOD-123 a2 4148 TRANSISTOR SMD MARKING CODE 352
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book small signal diodes vishay semiconductors vHN-db1102-0407 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vHN-db1102-0407
ph 4148 zener diode
ka6 transistor smd
Marking Code SMD databook
melf diodes color code 4148
TRANSISTOR SMD MARKING CODE w2
GLUE IR-130
smd diode sod-323 marking code L2
smd diode marking 5d SOD-323
SOD-123 a2 4148
TRANSISTOR SMD MARKING CODE 352
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MMS8050-L
Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Text: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.
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MJD31C
MJD32C
MJD42C
MMJD2955
MMJD3055
MMS8050-L
2SB1073R
Bd882
2SD667C
2SD667AC
2SD669AC
sot23-3 marking 63
zt5551
2SD468C
marking 2sd1664
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • 2SB1132 PNP Plastic-Encapsulate Transistors Power dissipation: PCM = 0.5W Tamb=25℃
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2SB1132
OT-89
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT-89 Plastic-Encapsulate Transistors 2SB1132 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 W (Tamb=25℃) 1 2 3. EMITTER Collector current -1 A ICM: Collector-base voltage V V(BR)CBO: -40 Operating and storage junction temperature range
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OT-89
2SB1132
OT-89
-100mA
-500mA,
-50mA
-50mA,
30MHz
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PDF
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2SB1132
Abstract: bAr sot-89 marking BAR sot89 marking BAR sot-89
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1132 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 W (Tamb=25℃) 1 2 3. EMITTER Collector current -1 A ICM: Collector-base voltage
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OT-89
2SB1132
OT-89
-100mA
-500mA,
-50mA
-50mA,
30MHz
2SB1132
bAr sot-89
marking BAR sot89
marking BAR sot-89
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PDF
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diac kr 206
Abstract: BAS70WT SMBJ11CA FR107 SOD-123 db1 diac EX 0045 bm diode zener 10A06 sources 812 6V8A Zener Diode pev LF marking PL 15Z DIODE
Text: PRODUCT CATALOG 2015 MCC TM Micro Commercial Components COMPLETE DISCRETE SEMICONDUCTORS SOLUTIONS POWERED BY SERVICE MCCSEMI.COM MCC TM Micro Commercial Components TM Where to Buy Micro Commercial Components www.arrownac.com www.digikey.com www.futureelectronics.com
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element14
diac kr 206
BAS70WT
SMBJ11CA
FR107 SOD-123
db1 diac
EX 0045 bm diode zener
10A06 sources
812 6V8A
Zener Diode pev LF marking
PL 15Z DIODE
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PDF
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2SB1132
Abstract: transistor marking BAR marking BAR sot-89
Text: Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1132 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 W (Tamb=25℃) 1 2 3. EMITTER Collector current -1 A ICM: Collector-base voltage V V(BR)CBO: -40
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OT-89
2SB1132
OT-89
-100mA
-500mA,
-50mA
-50mA,
30MHz
2SB1132
transistor marking BAR
marking BAR sot-89
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PDF
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transistor marking BAR
Abstract: 2SB1132 MARKING BAQ
Text: 2SB1132 2SB1132 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 W (Tamb=25℃) 1 2 3. EMITTER Collector current ICM: -1 A Collector-base voltage V V(BR)CBO: -40 Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃
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2SB1132
OT-89
-100mA
-500mA,
-50mA
-50mA,
30MHz
transistor marking BAR
2SB1132
MARKING BAQ
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PDF
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TPT5609
Abstract: SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A
Text: MCC TM Micro Commercial Components SMALL SIGNAL &POWER TRANSISTORS VCEO Part No hFE @ VCE & IC IC Polarity VCE sat & VBE(sat) @ IC & IB fT @ VCE & IC VCE IC VCE(sat) VBE(sat) IC IB fT Min. fT Max. VCE IC hFE hFE Max. (V) (mA) Max.(V) Max.(V) (mA) (mA) (MHz)
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2N3904
2N3906
2N4124
2N4400
2N4401
2N4402
2N4403
2N5401
2N5551
2N6517
TPT5609
SS8550 sot-23 Y2
sot-23 npn marking code cr
SS8050 sot-89 Y1
6B sot 363
2N3904 SOT-23 MARKING CODE
S9018 j6
sot-23 Marking 2TY
SOT 363 marking CODE 2H
MJE13003 2A
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PDF
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2SB1132
Abstract: 2SD1664
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SB1132 SOT-89 TRANSISTOR PNP 1. BASE FEATURES z Low VCE(sat): -0.2V(Typ) IC/IB=-500mA/-50mA z Compliments 2SD1664 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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OT-89
2SB1132
OT-89
-500mA/-50mA
2SD1664
-100mA
-500mA
-50mA
-50mA
30MHz
2SB1132
2SD1664
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