C505CA-4RC
Abstract: C505CA-LM C505 C505CA C505CA-2RM C505CA - 4RC C505C
Text: Microcontrollers Errata Sheet 4 December 2000 / Release 1.0 Device: C505A-4RM, C505CA-2RM / 4RM / LM, C505CA-4RC Stepping Code / Marking: Package: ES-BB, BB P-MQFP-44, Bare Die This Errata Sheet describes the deviations from the current user documentation. The
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C505A-4RM,
C505CA-2RM
C505CA-4RC
P-MQFP-44,
C505A/C505CA
/C505C
C505CA-4RC
505CA-2RM/C505CA-4RM/C505CA-LM/C505CA-4RC
C505CA-LM
C505
C505CA
C505CA - 4RC
C505C
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RTX166
Abstract: transistor smd ba rn C163 C163-16F C166 C167 SAB-C163-16F25F
Text: Microcomputer Components Technical Support Group Munich HL DC AT Errata Sheet June 18, 1998 / Release 1.1 Device : Stepping Code / Marking : SAB-C163-16F25F ES-BB x, BB x The C163-16F is the 128 Kbyte Flash version of the C163. This Errata Sheet describes the functional problems and restrictions known in this
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SAB-C163-16F25F
C163-16F
C163-16F,
SAB-C163-16F25F
100-pin
P-TQFP-100-1)
SAB-C163-16F25F,
RTX166
transistor smd ba rn
C163
C166
C167
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C163
Abstract: C163-16F C166 C167 SAB-C163-16F25F marking MEM
Text: Microcomputer Components Technical Support Group Munich HL DC AT Errata Sheet November 28, 1997 / Release 1.0 Device : Stepping Code / Marking : SAB-C163-16F25F ES-BB x, BB x The C163-16F is the 128 Kbyte Flash version of the C163. This Errata Sheet describes the functional problems and restrictions known in this
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SAB-C163-16F25F
C163-16F
C163-16F,
SAB-C163-16F25F
100-pin
P-TQFP-100-1)
SAB-C163-16F25F,
C163
C166
C167
marking MEM
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BCW61A
Abstract: BCW61B BCW61C BCW61D BCw6
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC
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OT-23
BCW61A
BCW61B
BCW61C
BCW61D
BCW61A
BCW61C
C-120
BCW61B
BCW61D
BCw6
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW61A BCW61B BCW61C BCW61D SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P silicon transistors Marking BCW61A = BA BCW61B = BB BCW61C = BC
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OT-23
BCW61A
BCW61B
BCW61C
BCW61D
BCW61A
BCW61C
C-120
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C515C
Abstract: C515C-8E
Text: Microcontrollers Errata Sheet 9 July 2001 / Release 1.4 Device: Stepping Code / Marking: Package: C515C-8E BB P-MQFP-80 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence
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C515C-8E
P-MQFP-80
C515C
C515C-8E,
C515C-8E
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MARKING CODE EA
Abstract: marking code 4e C505L C505L-4E
Text: Semiconductor Group Microcontrollers Errata Sheet 16 December 1998 / Release 1.0 Device: Stepping Code / Marking: Package: C505L-4E ES-BB P-MQFP-80 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence
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C505L-4E
P-MQFP-80
C505L
C505L-4E,
MARKING CODE EA
marking code 4e
C505L-4E
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Untitled
Abstract: No abstract text available
Text: Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.065 @ VGS = -4.5 V 4.9 0.074 @ VGS = -3.6 V 4.6 0.110 @ VGS = -2.5 V 3.8 S 1206-8 ChipFETt 1 D D G D D D D Marking Code G BB XX S Lot Traceability
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Si5443DC
Si5443DC-T1
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si5443DC Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) -20 rDS(on) (Ω) ID (A) 0.065 @ VGS = -4.5 V 4.9 0.074 @ VGS = -3.6 V 4.6 0.110 @ VGS = -2.5 V 3.8 S 1206-8 ChipFETt 1 D D G D D D D Marking Code G BB XX S Lot Traceability
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Si5443DC
Si5443DC-T1
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: HBU, HBZ, HBE, HBX Series www.vishay.com Vishay Draloric Ceramic Singlelayer DC Disc Capacitors, 2 kVDC General Purpose FEATURES • High capacitance in small sizes • Low losses • Wide range of different leadstyles • Material categorization: For definitions of compliance please see
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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HBE472MBB
Abstract: 3n3 Ceramic Disc Capacitors HBE472M HBU470KBB HBX Series HBU220K Draloric Lead Configuration
Text: HBU, HBZ, HBE, HBX Series www.vishay.com Vishay Draloric Ceramic Singlelayer DC Disc Capacitors, 2 kVDC General Purpose FEATURES • High capacitance in small sizes • Low losses • Wide range of different leadstyles • Material categorization: For definitions of compliance please see
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
HBE472MBB
3n3 Ceramic Disc Capacitors
HBE472M
HBU470KBB
HBX Series
HBU220K
Draloric Lead Configuration
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Untitled
Abstract: No abstract text available
Text: HBU, HBZ, HBE, HBX Series www.vishay.com Vishay Draloric Ceramic Singlelayer DC Disc Capacitors, 2 kVDC General Purpose FEATURES • High capacitance in small sizes • Low losses • Wide range of different lead styles • Material categorization: for definitions of compliance please see
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: HAK, HBK, HCK Series www.vishay.com Vishay Draloric Ceramic Singlelayer DC Disc Capacitors, Class 2, Low Loss 0.5 % , 1 kVDC, 2 kVDC, 3 kVDC FEATURES • • • • • Low losses High stability Low DF minimizes self heating at HF Ideal for switching to 100 Hz
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: HAK, HBK, HCK Series www.vishay.com Vishay Draloric Ceramic Singlelayer DC Disc Capacitors, Class 2, Low Loss 0.5 % , 1 kVDC, 2 kVDC, 3 kVDC FEATURES • • • • • Low losses High stability Low DF minimizes self heating at HF Ideal for switching to 100 Hz
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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VISHAY BJ
Abstract: HBK1 HIK152
Text: H.K Vishay Draloric Ceramic Pulse Disc Capacitors, Class 2 DESIGN: s max. Dmax. 3 max. Disc capacitor with epoxy coating HAK HBK HCK HIK 1kVDC 2kVDC 3kVDC 15kVDC L = 30 - 3 RATED VOLTAGE UR: F ±1 DIELECTRIC STRENGTH BETWEEN LEADS: Component test HAK 2000VAC, 50Hz, 2s
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15kVDC
2000VAC,
3000VAC,
4000VAC,
22500VDC,
08-Apr-05
VISHAY BJ
HBK1
HIK152
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capacitors BF
Abstract: h.u ceramic disc HDU10 HCU1 HBU15
Text: H.U Vishay Draloric Ceramic High Voltage Disc Capacitors, Class 1 DESIGN: s max. Dmax. Disc capacitors with epoxy coating RoHS e max. RATED VOLTAGE UR: 1 kVDC 2 kVDC 3 kVDC 4 kVDC 5 kVDC 6 kVDC L HAU HBU HCU HDU HEU HFU COMPLIANT F±1 V ± 0.5 DIELECTRIC STRENGTH BETWEEN LEADS:
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18-Jul-08
capacitors BF
h.u ceramic disc
HDU10
HCU1
HBU15
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104 Ceramic Disc Capacitors
Abstract: capacitors BF DSA00433384 HFU151 HCU221 h.u ceramic disc ceramic disc 104 capacitors HDU10 HCU1 HBU15
Text: H.U Vishay Draloric Ceramic High Voltage Disc Capacitors, Class 1 DESIGN: s max. Dmax. Disc capacitors with epoxy coating RoHS e max. RATED VOLTAGE UR: 1 kVDC 2 kVDC 3 kVDC 4 kVDC 5 kVDC 6 kVDC L HAU HBU HCU HDU HEU HFU COMPLIANT F±1 V ± 0.5 DIELECTRIC STRENGTH BETWEEN LEADS:
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08-Apr-05
104 Ceramic Disc Capacitors
capacitors BF
DSA00433384
HFU151
HCU221
h.u ceramic disc
ceramic disc 104 capacitors
HDU10
HCU1
HBU15
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104 Ceramic Disc Capacitors
Abstract: HDU10
Text: H.U Vishay Draloric Ceramic High Voltage Disc Capacitors, Class 1 DESIGN: s max. Dmax. Disc capacitors with epoxy coating RoHS e max. RATED VOLTAGE UR: 1 kVDC 2 kVDC 3 kVDC 4 kVDC 5 kVDC 6 kVDC L HAU HBU HCU HDU HEU HFU COMPLIANT F±1 V ± 0.5 DIELECTRIC STRENGTH BETWEEN LEADS:
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11-Mar-11
104 Ceramic Disc Capacitors
HDU10
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hbz331
Abstract: MARKING HCZ HCZ101 HFZ1 HGZ101 HBZ101
Text: H. Vishay Draloric Ceramic High Voltage Disc Capacitors, Class 2 DESIGN: s max. Dmax. e max. Disc capacitors with epoxy coating HAZ, HAE, HAX HBZ, HBE, HBX HCZ, HCE, HCX HDE HEE HFZ, HFE HGZ L F±1 RoHS RATED VOLTAGE UR: V ± 0.5 COMPLIANT 1 kVDC 2 kVDC 3 kVDC
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08-Apr-05
hbz331
MARKING HCZ
HCZ101
HFZ1
HGZ101
HBZ101
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSP 350 MiniSmart Prelim inary Data • • • • • • • • • High-side switch Short-circuit protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Reverse 12 V battery protection Switching inductive load
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Q67000-S227
E6327
OT-223
E3Sb05
S1P00110
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Untitled
Abstract: No abstract text available
Text: M K 2/12 SLS2/2 SLS2/4 D irect M ount Term inals Feed Through M K 10/14 M K 3/12 m; O j- Hi e o .e s Dim ensions W idth/Length/Height mm mm in. Insulation stripping length mm mm (in.) 8.5 / 13.5 / 12 (3.48/.53/.47J 8 6 / 1 5 / 1 5 (3.39/.S9/.59)
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OCR Scan
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33A59/
380VAC
60VAC
125VAC
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67GN
Abstract: E3128
Text: SIEMENS PWM Power Unit BTS 630 Prelim inary Data The device allows continuous power control tor lamps, LEDs or inductive loads. • High-side switch • Overtemperature protection • Short circuit/overload protection through pulse width reduction and overtemperature shutdown
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OCR Scan
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E3128
67GN
E3128
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rf01 M
Abstract: No abstract text available
Text: \ î_ B-B X -X NOTE : - MARKING ’ A" is us e d to id e n tify "S TANDARD1 term inal - CRIMPING SPECIFICATION ACCORDING TO C S-6A 322-001 BOX TERMINAL BODY TERMINAL NDICATION DIMENSIONS SP.C DENOTES SP.C DIMENSIONS NDICATION DIMENSIONS CRITIQUES DENOTES CRITICAL DIMENSIONS
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OCR Scan
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SD-64322-001
rf01 M
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BT02 MARKING
Abstract: CS989
Text: \ î_ B-B X -X NOTE : - MARKING "A" is us e d to id e n tify "STANDARD" te rm inal - CRIMPING SPECIFICATION ACCORDING TO CS-98913-001 BOX TERMINAL BODY TERMINAL NDIC ATIO N DIMENSIONS S P .C D EN OTES SPJC DIMENSIONS NDICATIO N DIMENSIONS CRITIQUES D EN OTES CRITICAL DIMENSIONS
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CS-98913-001
SD-98913-001
BT02 MARKING
CS989
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