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    MARKING C2H Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    MARKING c1y

    Abstract: MARKING C2K marking C2H marking c1h marking C1s marking c1e c2a marking marking C1P UPG152TA C1H MARKING
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. +0.2 2.8 -0.3 T06 +0.2 1.5 -0.1 3 0.95 4 1.9±0.2 2 0.95 5 1 6 2.9±0.2 +0.2 1.1 -0.1 MARKING -0.05 0.3 +0.10 0.13±0.1 0.8 0 to 0.1 PART


    Original     		UPC2708T UPC8106T UPC2747T UPC2709T UPC8108T UPC2748T UPC2710T UPC8109T UPC2749T UPC2711T MARKING c1y MARKING C2K marking C2H marking c1h marking C1s marking c1e c2a marking marking C1P UPG152TA C1H MARKING PDF

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


    Original     		NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G PDF

    LOT CODE NE NEC

    Abstract: NEC TRANSISTOR MARKING CODE date code marking NEC mini mold transistor 25 nec lot number on packing label code marking NEC hjfet 2SC5006 transistor 24 C2H marking
    Text: Information TAPING SPECIFICATIONS OF SUPER MINI MOLD SEMICONDUCTORS FOR HIGH FREQUENCY USE Document No. P10687EJ4V0IF00 4th edition Date Published March 1998 N CP(K) 1997 Printed in Japan This document is subject to change according to improving the specifications.


    Original     		P10687EJ4V0IF00 us588-6130 LOT CODE NE NEC NEC TRANSISTOR MARKING CODE date code marking NEC mini mold transistor 25 nec lot number on packing label code marking NEC hjfet 2SC5006 transistor 24 C2H marking PDF

    date code marking NEC

    Abstract: NEC MARKING CODE code marking NEC LOT CODE NEC marking C2H nec lot number on packing label PC2771T marking 23 C2H marking nec lot number
    Text: Information TAPING SPECIFICATIONS OF 6 PIN MINI MOLD SEMICONDUCTORS FOR HIGH FREQUENCY USE Document No. P11062EJ3V0IF00 3rd edition Date Published March 1998 N CP(K) 1994 Printed in Japan No part of this document may be copied or reproduced in any form or by any means without the prior written


    Original     		P11062EJ3V0IF00 grante588-6130 date code marking NEC NEC MARKING CODE code marking NEC LOT CODE NEC marking C2H nec lot number on packing label PC2771T marking 23 C2H marking nec lot number PDF

    transistor marking T79 ghz

    Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority


    Original     		PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 PDF

    2SK2396A

    Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The


    Original     		P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor PDF

    nec 16312

    Abstract: c1677 PC1678G TRANSISTOR MARKING CODE 1P 6PIN PC1677 UPC1677C PC1677C PC2709T marking code C1E mmic 4327 030 11011
    Text: Application Note USAGE AND APPLICATION OF SILICON MEDIUMPOWER HIGH-FREQUENCY AMPLIFIER MMIC µPC1677 to 1679 µPC2708 to 2710 µPC2762/2763 µPC2771/2776 Document No. P12152EJ2V0AN00 2nd edition Date Published November 1999 N CP(K) 1997, 1999 Printed in Japan


    Original     		PC1677 PC2708 PC2762/2763 PC2771/2776 P12152EJ2V0AN00 an88-6130 nec 16312 c1677 PC1678G TRANSISTOR MARKING CODE 1P 6PIN UPC1677C PC1677C PC2709T marking code C1E mmic 4327 030 11011 PDF

    d59 smd 6-pin

    Abstract: minimold SMD IC MARKING GP transistor C1z SMD MARKING GP TRANSISTOR C2H marking
    Text: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS µPC2762TB,µPC2763TB,µPC2771TB 3 V, SUPER MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION µPC2762TB, µPC2763TB and µPC2771TB are silicon monolithic integrated circuits designed as amplifier for


    Original     		PC2762TB, PC2763TB, PC2771TB PC2763TB PC2771TB PC2762T, d59 smd 6-pin minimold SMD IC MARKING GP transistor C1z SMD MARKING GP TRANSISTOR C2H marking PDF

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 PDF

    equivalent transistor D1555

    Abstract: pc1678g d1555 transistor transistor d1457 ei-33 d1577 marking code C1E 1679G D986 P12152E
    Text: Application Note USAGE AND APPLICATION OF SILICON MEDIUMPOWER HIGH-FREQUENCY AMPLIFIER MMIC µPC1678G/1678GV/1679G µPC2708T to 2710T µPC2762T/2763T µPC2771T/2776T Document No. P12152EJ3V0AN00 3rd edition Date Published May 2000 N CP(K) Printed in Japan


    Original     		PC1678G/1678GV/1679G PC2708T 2710T PC2762T/2763T PC2771T/2776T P12152EJ3V0AN00 cha88-6130 equivalent transistor D1555 pc1678g d1555 transistor transistor d1457 ei-33 d1577 marking code C1E 1679G D986 P12152E PDF

    MARKING C3F

    Abstract: PC8182TB PC8181TB F MARKING 6PIN transistor marking wt
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The PC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.


    Original     		PC8182TB PC8182TB HS350 WS260 VP215 IR260 PU10206EJ01V0DS MARKING C3F PC8181TB F MARKING 6PIN transistor marking wt PDF

    qml38535

    Abstract: AD603 military AD600 AD602 AD603 GDIP1-T16 AD600SQ
    Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Drawing updated to reflect current requirements. -ro 02-01-11 R. MONNIN B Five year review requirement. -rrp 09-11-10 C. SAFFLE REV SHEET REV SHEET REV STATUS REV B B B B B B B B B B B B B OF SHEETS SHEET


    Original     		PDF

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


    Original     		D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71 PDF

    SN14

    Abstract: SN142E
    Text: METAL FILM SN 塗装絶縁形金属皮膜固定抵抗器 Coat-Insulated Fixed Metal Film Resistors •構造図 Construction ① ② ③ ⑤ ④ ⑥ ⑦ Marking ① 表示 Insulation coating ② 絶縁塗装 ③ トリミングライン Trimming line


    Original     		14Axial 30min. 23min. 10times SN14 SN142E PDF

    marking code C1E mmic

    Abstract: P12152E BS192 uPC2708TB PC2710TB japan mmic marking code mmic amplifier marking code 414 NEC marking code C1E mmic marking code C1F mmic
    Text: Application Note Usage and Applications of 6-Pin Super Mini-Mold Silicon Medium-Power High-Frequency Amplifier MMIC µPC2708TB/2709TB/2710TB µPC2762TB/2763TB µPC2771TB/2776TB Document No. P13252EJ2V0AN00 2nd edition Date Published May 1999 N CP(K) 1998, 1999


    Original     		PC2708TB/2709TB/2710TB PC2762TB/2763TB PC2771TB/2776TB P13252EJ2V0AN00 cir88-6130 marking code C1E mmic P12152E BS192 uPC2708TB PC2710TB japan mmic marking code mmic amplifier marking code 414 NEC marking code C1E mmic marking code C1F mmic PDF

    marking 3f 6pin

    Abstract: PC2771T marking C3f F MARKING 6PIN
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT µPC8182TB 3 V, 2.9 GHz SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8182TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This IC operates at 3 V. The medium output power is suitable for RF-TX of mobile communications system.


    Original     		PC8182TB PC8182TB marking 3f 6pin PC2771T marking C3f F MARKING 6PIN PDF

    Transistor C3E

    Abstract: C2H marking
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3241TB 3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3241TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.


    Original     		PC3241TB PC3241TB IR260 WS260 HS350 PU10774EJ01V0DS Transistor C3E C2H marking PDF

    Untitled

    Abstract: No abstract text available
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3241TB 3.3 V, SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The PC3241TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.


    Original     		PC3241TB PC3241TB IR260 WS260 HS350 PDF

    A23 851 diode

    Abstract: B92 diode A79 marking code transistor marking A21 marking .A55 marking code ADH a74 marking code A84 diode b78 board 9535H
    Text: TM RIMM Module with 256/288Mb RDRAMs Preliminary Revision History * Rev. 0.95 Date : 2001.07.23 1. Page2, 7, 8, 10, 12 : Add 2D RIMM part Rev. 0.95 / July.01 1 TM RIMM Module with 256/288Mb RDRAMs Preliminary Overview Key Timing Parameters/Part Numbers The‘Rambus RIMMTM module is a general purpose


    Original     		256/288Mb 16/18TE122 BYTE123 BYTE124 BYTE125 BYTE126 18bit BYTE128 BYTE127 A23 851 diode B92 diode A79 marking code transistor marking A21 marking .A55 marking code ADH a74 marking code A84 diode b78 board 9535H PDF

    marking code C1E mmic

    Abstract: uPC2708TB P12152E 544 mmic silicon power gmbh PC2710TB UPC2708 UPC2710TB marking code C1F mmic
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		d88-6130 marking code C1E mmic uPC2708TB P12152E 544 mmic silicon power gmbh PC2710TB UPC2708 UPC2710TB marking code C1F mmic PDF

    MIL-STD-806

    Abstract: tc5000 TC40H000 rca thyristor manual TC4069 OSCILLATOR tc-74ic mc14500b mc14500 shockley diode application IC - TC4001BP
    Text: OUTLINE 1. C2HOS IC Family 1.1 CMOS and C 2M0S "CMOS" is an abbreviation of "Complementary Metal Oxide Semi­ conductor", and "Complementary" means to combine P-channel type MOS FET and N-channel type MOS FET complementarily. The CMOS circuit configuration, since its announcement at ISSCC in 1963, attracted


    OCR Scan     		PDF

    A08S

    Abstract: 15081 GOSC MQ K1 k6 diode
    Text: A »» PULSE POWER APPLICATIONS C ü R R E í iilP R O W B ^ D íQ D E V rrm: Vdc max: It s m : Tvj max: Freq.: 12.000V 0,85 x V rrm 1min 60 kA / tp = 1 ms 125 °C For Single Pulse Applications (Tvj before Pulse max. 50°C) Fm: Weight: 20 kN ±10% 1,0 kg


    OCR Scan     		SEMICON10 0050-dl A08S 15081 GOSC MQ K1 k6 diode PDF