MARKING 68W SOT-23
Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06
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25-04W
25-05W
25-06W
25-07W
3904S
846AT
846BW
846BT
847AT
847BW
MARKING 68W SOT-23
marking code 67a sot23 6
sot143 Marking code 5B
baw 92
SOT-363 marking CF
54 fk SOT-23
BAT 545
SOT-363 marking BF
sot-89 MARKING CODE BN
MARKING CODE DH SOT 23
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c639
Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
c33840
transistor C639
c33725
c877
C63716
marking code 67a sot23 6
c878
c33740
F423
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transistor Bc 540
Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W
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0-02V
0-03W
3-02V
3-02W
3-03W
3-04W
3-05W
3-06W
4-02V
4-02W
transistor Bc 540
68W SOT
marking codes transistors a1 sot-23
MARKING 68W SOT-23
sot 223 marking code AH
dk marking code sot-89
MARKING CODE DH SOT 23
sot-89 MARKING CODE BN
1Bs sot-23
MY sot-89
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transistor C639
Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W
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3-02W
3-03W
3-04W
3-05W
3-06W
4-02W
4-03W
4-04W
4-05W
4-06W
transistor C639
c639
transistor f423
F423
transistor f422
transistor f422 equivalent
cx59
C640-10
f422
c640 transistor
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Untitled
Abstract: No abstract text available
Text: Package Details - SOD-882L Mechanical Drawing Lead Code: 1 Cathode 2) Anode Part Marking: One Character Alpha/Numeric Code Mounting Pad Geometry Dimensions in mm) Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R0 (19-September 2007)
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OD-882L
19-September
EIA-481-1-A
28-September
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bond wire gold
Abstract: No abstract text available
Text: Package Details - SOT-223C Mechanical Drawing Lead Code: Part Marking: Full Part Number. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R1 (5-November 2007)
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OT-223C
EIA-481-1-A
Custom333-86-4
19-September
bond wire gold
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MARKING 19S
Abstract: bfq 85 fgs npn Q62702-F1088 Marking Code FGs
Text: BFQ 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: CECC 50 002/259 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1088
OT-89
Dec-16-1996
MARKING 19S
bfq 85
fgs npn
Q62702-F1088
Marking Code FGs
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MARKING 19S
Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ Q62702-F1359 BFG19S
Text: BFG 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: CECC 50 002/259 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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OT-223
BFG19S
Q62702-F1359
900MHz
Dec-13-1996
MARKING 19S
RF NPN POWER TRANSISTOR 2.5 GHZ
Q62702-F1359
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VJ HIFREQ
Abstract: No abstract text available
Text: Multilayer Ceramic Chip Capacitors www.vishay.com Vishay Part Numbering/Ordering Information PART NUMBERING/ORDERING INFORMATION VJ0805 CASE CODE 7 Y 102 CAPACITANCE DIELECTRIC NOMINAL CODE 0201 A = C0G (NP0) 0402 Y = X7R 0505 G = X5R 0603 H = X8R 06C4 (5)
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VJ0805
19-Sep-13
VJ HIFREQ
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transistor k87
Abstract: CMKT5078 CMKT5087 CMKT5088
Text: Central CMKT5078 CMKT5087 CMKT5088 TM Semiconductor Corp. ULTRAmini SURFACE MOUNT SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5078 , CMKT5087, and CMKT5088, are Silicon transistors in an ULTRAmini™ surface mount package, designed for applications requiring high
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CMKT5078
CMKT5087
CMKT5088
CMKT5087,
CMKT5088,
OT-363
transistor k87
CMKT5078
CMKT5087
CMKT5088
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Ceramic RF Power and HV Capacitors
Abstract: dwa 108 a kvp 42 DIODE KT 0803 K kvar schematic kvp 03 diode kvp 34 DIODE KVP 79 A dwa 108 Optoelectronics Device data
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book CERAMIC RF POWER AND HV CAPACITORS vishay DRALORIC vsD-db0048-0210 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vsD-db0048-0210
Ceramic RF Power and HV Capacitors
dwa 108 a
kvp 42 DIODE
KT 0803 K
kvar schematic
kvp 03 diode
kvp 34 DIODE
KVP 79 A
dwa 108
Optoelectronics Device data
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DIODE C06
Abstract: EECO THUMBWHEEL Switch Cinch Connectors E20SM diode marking 714 KELVIN-VARLEY DIVIDER 2214G 2299G 2229G 2216G
Text: 2000 SERIES THUMBWHEEL SWITCHES EECO’s 2000 Series is ideal for demanding industrial control applications. The large size of the switch makes it easy to operate, even if the operator is wearing gloves. The 2000 Series is available with an optional internal
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MARKING R6 SOT-363
Abstract: No abstract text available
Text: CMKD4448 SURFACE MOUNT TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD4448 type contains three 3 Isolated High Speed Silicon Switching Diodes, manufactured by the epitaxial planar
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CMKD4448
OT-363
100mA
19-September
MARKING R6 SOT-363
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c639
Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
C63716
C337 40
sot-23 MARKING 636
MARKING 68W SOT-23
C-639
F959
sot143 Marking code 5B
B304A
sot-89 MARKING CODE BN
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npn transistor sot-89 MARKING AG
Abstract: No abstract text available
Text: NPN Silicon RF Transistor BFQ 19S • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 to 70 mA. 6 CECC-type available: C E C C 50002/259. Type Marking Ordering code tape and reel
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OCR Scan
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OT-89
npn transistor sot-89 MARKING AG
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Untitled
Abstract: No abstract text available
Text: R E U . /ED JUN 2 6 19S3 DOPUNT REVISIONS DESCRIPTION LETTER NO NOTES: A REVISED PER ECO 1. DISSIPATION FACTOR: .005 MAX @ 2 5 ' C, 1 kHZ. ER <£18 2. CAPACITANCE: 180 n F -2 2 0 nF. 3. DIELECTRIC WITHSTANDING VOLTAGE: 2.5 kV RATED, 3.5 kV PROCESS FOR 2 HOURS @ 100* C AND
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204A252B000
7W970
200NF
2500WVDC
M204A252B000
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MARKING 19S
Abstract: sot marking code ZS
Text: SIEMENS BFQ 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: C E C C 50 002/259 ESP: Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
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PDF
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Q62702-F1088
OT-89
MARKING 19S
sot marking code ZS
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ez920
Abstract: LH5160N LH5160 LH5160HN-10L RC-1009B
Text: n SHARP 2 8 19SLJ TO: •K ìlì - ì R E N C E D E V I C E S P E C I F I C A T I O N FOR 64K bit S T A T I C R A M 8,192 X 8bit M O D E L NO. L H 5 1 6 0 H N - 1 ( LH5160N8 OL ) SP E C N O . : E L 0 2 Y 0 1 1 ISSUE: CUSTOMERS D e c . 13.1990 APPROVAL DATE:
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LH5160N8
EL02Y011
4-P-225
OP16-P-225
OP24-P-450
S0P28-P-45Q
ez920
LH5160N
LH5160
LH5160HN-10L
RC-1009B
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transistor 1p3
Abstract: BFQ19P MARKING 19S ic MARKING FZ 62702-F1060 F1060 e23s
Text: 47E D ê23SbGS DDSMMST 7 « S I E 6 7 ^ 3 3 BFQ 19P NPN Silicon RF Transistor - SIEMENS AKTI ENGESELLSCHAF • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S
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23SbGS
BFQ19P
62702-F1060
OT-89
D2Hm35
transistor 1p3
MARKING 19S
ic MARKING FZ
F1060
e23s
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Q62702-F1359
Abstract: 12L marking transistor 7g mmic+SMD+amplifier+marking+code+19s
Text: SIEMENS BFG 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: C E C C 50 002/259 ESP: Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
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OT-223
Q62702-F1359
900MHz
Q62702-F1359
12L marking
transistor 7g
mmic+SMD+amplifier+marking+code+19s
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Untitled
Abstract: No abstract text available
Text: 32E D m a 2 3 t.3 2 o o o ib ^ m ? « s ip NPN Silicon RF Transistor 31 ^ 3 .3 B FQ 19P SIEMENS/ SPCLi SEMICONDS _ • For low-distortion broadband amplifiers in antenna and telecommunications systems at collector currents from 10 to 70 mA. For new design refer to BFQ 19S
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BFQ19P
OT-89
100fflA
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Untitled
Abstract: No abstract text available
Text: BFG 19S SIEMENS NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers In antenna and telecommunications system s up to 1,5GHz at collector currents from 10 mA to 70 mA • C EC C -typ e available: C E C C 50 002/259 E S P : Electrostatic discharge sensitive device, observe handling precaution!
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OCR Scan
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BFG19S
Q62702-F1359
OT-223
Uni-0-01
fl235bD5
D1517SÃ
IS21I2
900MHz
aS35bD5
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KJE transistor
Abstract: No abstract text available
Text: 32E D • flS3b3EG DOlb^S 4 « S I P NPN Silicon RF Transistor 3 1 -^ 3 SIEMENS/ SPCLi SEMICONDS T ' BFQ 19S _ • For low-noise, low-distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 to 70 mA.
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OCR Scan
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PDF
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OT-89
023b32G
KJE transistor
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LH5160
Abstract: No abstract text available
Text: n SHARP 2 8 19SLJ TO: •K ìlì - ì R E N C E D E V I C E S P E C I F I C A T I O N FOR 64K bit S T A T I C R A M 8,192 X 8bit M O D E L NO. L H 5 1 6 0 H N - 1 ( LH5160N8 OL ) SP E C N O . : E L 0 2 Y 0 1 1 ISSUE: CUSTOMERS D e c . 13.1990 APPROVAL DATE:
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OCR Scan
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LH5160N8
EL02Y011
4-P-225
OP16-P-225
OP24-P-450
S0P28-P-45Q
LH5160
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