smd code marking LF sot23
Abstract: No abstract text available
Text: Product specification Philips Semiconductors PMBD2837; PMBD2838 High-speed double diodes FEATURES • Small plastic SMD package • High switching speed: max. 4 ns • Continuous reverse voltage: max. 30 V and 50 V respectively PINNING MARKING MARKING CODE
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PMBD2837;
PMBD2838
PMBD2837
PMD2837,
PMD2838
smd code marking LF sot23
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117 smd code marking
Abstract: ELL6SH221M ELL6SH ELL6UH330M hl 6 smd ELL6RH100M 137 MARKING ELL6UH391M MARKING ell6sh100m ELL6SH470M
Text: 1854-2012.qxp:QuarkCatalogTempNew 9/6/12 4:56 PM Page 1854 TEST & MEASUREMENT 22 Inductors Magnetic Shielded SMD Choke Coils — ELL-CTV RoHS Unshielded SMD Choke Coils — ELL-6RH, ELL-6SH and ELL-6UH Marking 12.0 ±0.5 Marking Date code 4.2 ±0.3 12.0±0.5
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PCC-D126F
117 smd code marking
ELL6SH221M
ELL6SH
ELL6UH330M
hl 6 smd
ELL6RH100M
137 MARKING
ELL6UH391M MARKING
ell6sh100m
ELL6SH470M
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Untitled
Abstract: No abstract text available
Text: E2889/E2889LF GR1244 and GR-253 Core Stratum 3 Minature Surface Mount TCXO ISSUE 3 ; 13 JUNE 2005 Nominal Frequency, Fo • 20.0MHz Marking ■ Manufacturers ID CMAC ■ Device Number (E2889) ■ Date Code (YYWWL) ■ Antistatic symbol (∆, denotes pad 1)
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E2889/E2889LF
GR1244
GR-253
E2889)
E2889
10-60Hz
500Hz
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Untitled
Abstract: No abstract text available
Text: E2889/E2889LF GR1244 and GR-253 Core Stratum 3 Minature Surface Mount TCXO ISSUE 3 ; 13 JUNE 2005 Marking • Manufacturers ID CMAC ■ Device Number (E2889) ■ Date Code (YYWWL) ■ Antistatic symbol (∆, denotes pad 1) Nominal Frequency, Fo ■ 20.0MHz
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E2889/E2889LF
GR1244
GR-253
E2889)
E2889
10-60Hz
500Hz
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ESH157M063AH2AA
Abstract: ESH106M250AH2AA X4015 ESH226M035AC3AA ESH225M400AH1AA ESH476M035AE3AA ESH475M400AH2AA ESH106M400AH4AA arcotronics aluminium case
Text: ARCOTRONICS ESH Aluminium Electrolytic Capacitors SINGLE-ENDED LEADS - General purpose 105°C / 2000 h Marking ARCOTRONICS’ logo Series: ESH , Operating temperature: (105°C) Rated capacitance (F), Rated voltage: (Vdc), Negative polarity: (white line), Date code.
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ESH107M400AQ4AA
ESH157M400AQ4AA
ESH474M450AE3AA
ESH105M450AG3AA
ESH225M450AH1AA
ESH335M450AH2AA
ESH475M450AH2AA
ESH685M450AL3AA
ESH106M450AL4AA
ESH156M450AM7AA
ESH157M063AH2AA
ESH106M250AH2AA
X4015
ESH226M035AC3AA
ESH225M400AH1AA
ESH476M035AE3AA
ESH475M400AH2AA
ESH106M400AH4AA
arcotronics aluminium case
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E2889
Abstract: 90VSS 10-GN
Text: E2889 GR1244 and GR-253 Core Stratum 3 Minature Surface Mount TCXO ISSUE 2 ; 18 OCTOBER 2004 Nominal Frequency, Fo • 20.0MHz Marking ■ Manufacturers ID CMAC ■ Device Number (E2889) ■ Date Code (YYWWL) ■ Antistatic symbol (∆, denotes pad 1) Supply Voltage
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E2889
GR1244
GR-253
E2889)
10-60Hz
500Hz
GR-1244-CORE)
04ppm
-85dBc/Hz
E2889
90VSS
10-GN
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Untitled
Abstract: No abstract text available
Text: Central" CLL2003 sem iconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEM ICONDUCTOR CLL2003 type is a silicon switching diode manufactured by the epitaxialplanar process, designed for applications requiring high voltage capability. Marking Code: Cathode band.
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CLL2003
100mA
200mA
100i2
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 158W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit « Built in bias resistor R1=2.2ki2, R2=47kfl Ordering Code Pin Configuration WIs UPON INQUIRY 1= B Package 2= E o tl Marking BCR 158W CO Type
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47kfl)
OT-323
235b05
BCR158W
a53SbOS
D1BD77B
fiS35bD5
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diode • • • • BAS 140W General purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Type BAS 140W Ordering Code tape and reel 1 Q62702-A1071 A Pin Configuration 2 C Marking
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Q62702-A1071
OD-323
EHB00156
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Untitled
Abstract: No abstract text available
Text: 2SD1781K Transistor, NPN Features • available in SMT3 SMT, SC-59 package • package marking: 2SD1781K; AF-*, where ★ is hFE code • extremely low collector saturation voltage • even though it is in a small package, it can draw large currents Dimensions (Units : mm)
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2SD1781K
SC-59)
2SD1781K;
Q16-o
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SMD MARKING CODE 901
Abstract: CFY 19 CFY 10 GaAs FET cfy 14
Text: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393
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Q62702-F1393
Q62702-F1394
GSO05553
SMD MARKING CODE 901
CFY 19
CFY 10
GaAs FET cfy 14
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TRANSISTOR BC 252
Abstract: BC transistor series
Text: 2SD1781K Transistor, NPN Features Dimensions Units : mm • • available in SMT3 (SMT, SC-59) package package marking: 2SD1781K; AF-*, where ★ is hFE code 2SD1781K (SMT3) 0.96 0.96 24 • extremely low collector saturation voltage • even though it is in a small package,
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2SD1781K
SC-59)
2SD1781K;
2SD1781K
TRANSISTOR BC 252
BC transistor series
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Q62702-F1394
Abstract: No abstract text available
Text: Infineon faîhnoîogte» G aA s FET CFY 3 5 Data Sheet • • Low noise High gain • For low-noise front end amplifiers • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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Q62702-F1393
Q62702-F1394
Q62702-F1394
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Q68000-A8370
Abstract: CGY MW
Text: GaAs Components Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1 170 CF 739 MSs Q62702-F1215
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1900C
Q62702-L0132
Q62702-L0131
Q62702-F1215
Q62702-F1391
Q62705-K0603
Q62705-K0604
Q62702-G0116
Q62703-F97
Q68000-A8370
CGY MW
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSP 297 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type Vqs h BSP 297 200 V 0.65 A Type BSP 297 Ordering Code Q67000-S068 ^DS(on) Package Marking 2Q SOT-223 BSP 297 Tape and Reel Information
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OT-223
Q67000-S068
E6327
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P-SOT-143
Abstract: CSY210 Type CF 739 Marking Ordering Code MSs P-SOT343-4-1 cly5 P-SOT143-4-1 Q62702-F1215 G69 marking
Text: GaAs Components Infineon t »c h n o !o g i ss Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1
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CFY30
1900C
Q62702-L0132
Q62702-L0131
Q62702-F1215
Q62702-F1391
Q62705-K0603
Q62705-K0604
Q62702-G0116
P-SOT-143
CSY210
Type CF 739 Marking Ordering Code MSs
P-SOT343-4-1
cly5
P-SOT143-4-1
G69 marking
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MCF528X
Abstract: MCF5282 MCF5281 MCF5282DE L95M
Text: MCF5282 Chip Errata Silicon Revision: All Supports: MCF5281, MCF5282 Summary of MCF528x Errata All current MCF5281/82 devices are marked as L95M mask set. The date code on the marking can be used to determine which errata have been corrected on a particular device as shown in Table 1. The datecode format is
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MCF5282
MCF5281,
MCF5282
MCF528x
MCF5281/82
XXX0324
XXX0326
MCF5281
MCF5282DE
L95M
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SECF036
Abstract: MCF5214 MCF5216 MCF5216DE MCF5282 SECF038
Text: MCF5216 Chip Errata Silicon Revision: All Supports: MCF5214, MCF5216 Summary of MCF5214/16 Errata All current MCF5214/16 devices are marked as L95M mask set. The date code on the marking can be used to determine which errata have been corrected on a particular device as shown in Table 1. The datecode format is
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MCF5216
MCF5214,
MCF5216
MCF5214/16
XXX0324
XXX0326
SECF036
MCF5214
MCF5216DE
MCF5282
SECF038
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ERA82-004
Abstract: No abstract text available
Text: ERA82-004 0.6A H Outline Drawing scHOTTKY b a r r i e r d io d e Voltage class. Lot No. Cathode mark -► + \ / 02.5 (00.10) / 1 h • 25 mm. (0.98) 00.58 (00.02) 3.0 25 mm. (0.98) (0.12) Mini Mold ■ Marking ■ Features • Lo w V f Color code : White
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ERA82-004
500ns,
000300e}
ERA82-004
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ERB83-006
Abstract: marking JSs s1nl R20 marking JE55
Text: ERB83-006 2A : Outline Drawings S C H O TTK Y BARRIER DIODE 1 Features • <svF : Marking Low Vi S 7 - 3 - K : It Super high speed switching. Color code : >iu<- High reliability by planer design. Abridged type name * v-Kt - î C a th o d e m o rk • £ ! & : Applications
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ERB83-006
EE3B77E
DDDL171
marking JSs
s1nl
R20 marking
JE55
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schottky marking lk
Abstract: A84 marking code ERA84-009 T12E
Text: E R A 8 4 - 0 0 9 ia > a SCHOTTKY BARRIER DIODE • f t « : Features • te V F liS/F ; Marking Low Vp m x j -?■>■? x e - w & m *7 -: - K Color code : Blue S u p e r h ig h speed s w itc h in g . • :7 V — t - H igh reliab ility by p la n e r d e sig n .
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ERA84-009
70CC/W)
schottky marking lk
A84 marking code
T12E
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Untitled
Abstract: No abstract text available
Text: 1.8V ~ 3.6V SM VCTCXO for GPS GTXO-253 Specifications 2011/65/EU GTXO-253T: TCXO, no frequency adjustment GTXO-253V: TCXO with VC frequency adjustment Variant Parameters Option Codes T V 10.0 ~ 52.0MHz ±2.5ppm ±2.0ppm ±1.5ppm ±0.5ppm see note 1
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GTXO-253
2011/65/EU
GTXO-253T:
GTXO-253V:
05ppm/Â
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Untitled
Abstract: No abstract text available
Text: 1.8V ~ 3.6V SM VCTCXO for GPS GTXO-253 Specifications GTXO-253T: TCXO, no frequency adjustment GTXO-253V: TCXO with VC frequency adjustment Variant Parameters Frequency range: J H G E 0 to +50°C
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GTXO-253
GTXO-253T:
GTXO-253V:
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GTXO-253T
Abstract: GTXO
Text: 1.8V ~ 3.6V SM VCTCXO for GPS GTXO-253 Specifications GTXO-253T: TCXO, no frequency adjustment GTXO-253V: TCXO with VC frequency adjustment Variant Parameters 2.50 ±0.20 V Frequency range: 10.0 ~ 40.0MHz Frequency calibration: ±2.0ppm +25°C ±3°C
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GTXO-253
GTXO-253T:
GTXO-253V:
//10pF
05ppm/
GTXO-253T
GTXO
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