B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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Untitled
Abstract: No abstract text available
Text: Part Marking Information Vishay High Power Products Insulated TO-220AC Tandem Example: Part number xxxxxx V Z119M A C Assembly lot code This is a xxxxxx with assembly lot code AC, assembled on WW 19, 2001 in the assembly line “M” Product version optional :
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O-220AC
Z119M
27-Apr-09
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Untitled
Abstract: No abstract text available
Text: 1.5SMC SERIES GLASS PASSOVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 to 550 Volts 1500 Watt Peak Pulse Power 1.5SMC PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN REVERSE PEAK MAXIMUM STANDTEST VOLTAGE VOLTAGE LEAKAGE CLAMPING PULSE OFF
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smd k72 y5
Abstract: K72 y8 k72 y4 BAS70WT 46A gez SMBJ8.5CA SMBJ11CA SMD Marking K72 sk 75 dgm marking f5 sot-89
Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2N7002T 2N7002W 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR
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1N4148W
1N4148WX
1N4148X
1N4448W
1N4448WX
1N4448X
1N914W
1SS181
1SS184
1SS193
smd k72 y5
K72 y8
k72 y4
BAS70WT
46A gez
SMBJ8.5CA
SMBJ11CA
SMD Marking K72
sk 75 dgm
marking f5 sot-89
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Untitled
Abstract: No abstract text available
Text: P6SMB SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 6.8 TO 550 Volts 600 Watt Peak Pulse Power P6SMB PART NUMBER MARKING CODE REVERSE BREAKDOWN BREAKDOWN MAXIMUM TEST STANDVOLTAGE VOLTAGE CLAMPING CURRENT OFF VBR V VBR(V) VOLTAGE UNIBIIT (mA)
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diode marking 343
Abstract: sot-343 schottky diode
Text: Central CMWSH-4 TM Semiconductor Corp. SURFACE MOUNT SCHOTTKY DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMWSH-4, 40V, Low VF, Dual, Galvanically isolated Silicon Schottky diode , is designed for use in high speed surface mount switching applications. Marking Code is WSH4.
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OT-343
100mA
27-August
diode marking 343
sot-343
schottky diode
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Si2303DS
Abstract: A3 MARKING CODE
Text: Si2303DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.240 @ VGS = –10 V –1.7 0.460 @ VGS = –4.5 V –1.3 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2303DS
O-236
OT-23)
S-49557--Rev.
27-Apr-98
A3 MARKING CODE
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Untitled
Abstract: No abstract text available
Text: Si2303DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.240 @ VGS = –10 V –1.7 0.460 @ VGS = –4.5 V –1.3 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2303DS
O-236
OT-23)
08-Apr-05
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PDF
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Si2303DS
Abstract: A3 MARKING CODE
Text: Si2303DS Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.240 @ VGS = –10 V –1.7 0.460 @ VGS = –4.5 V –1.3 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si2303DS
O-236
OT-23)
18-Jul-08
A3 MARKING CODE
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BZX 48c 6v8
Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Text: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P
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OCR Scan
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2004C
2004S
2004D
Z5250B
T3904
Z5251B
Z5252B
Z5253B
Z5254B
Z5255B
BZX 48c 6v8
PT2369
code Cj5
CMXZ11VTO
7006S
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PDF
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ST MARKING STYLE
Abstract: D R MARKING
Text: A CALIFORNIA MICRO DEVICES PAC 27A01 P/ACTIVE PRECISION VOLTAGE DIVIDER NETWORK Features • Matched resistor pair • Tight parametric control • Long term stability • SOT-23 package for space critical applications A p p licatio n s • Matched resistor pair
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OCR Scan
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OT-23
HIP5020
27A01
AP-202
27A01
PAC27A01T/B
PAC27A01T/R
OT-23
ST MARKING STYLE
D R MARKING
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 95550 IRFR/U4105PbF Ultra Low On-Resistance l Surface Mount IRFR4105 l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D RDS(on) = 0.045Ω G ID = 27A
S Fifth Generation HEXFETs from International Rectifier
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IRFR/U4105PbF
IRFR4105)
IRFU4105)
O-252AA)
EIA-481
EIA-541.
EIA-481.
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Untitled
Abstract: No abstract text available
Text: 5 T H IS D R AW IN G C O PYRIG HT IS U N P U B L IS H E D . - R ELEASED BY TYCO E LEC TR O N ICS C ORPORATION. FOR ALL 4 3 2 P U B L IC A T IO N R IG H TS RESERVED. LOC D IS T AD 25 R E V IS IO N S D 53.34[2. 100] DWN D E S C R IP T IO N REVISED PER 27APR07
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OCR Scan
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27APR07
ECO-07-007578
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PDF
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Untitled
Abstract: No abstract text available
Text: IPEC 27A88 CALIFORNIA MICRO DEVICES 8 CHANNEL RELAY DRIVER Features Description ♦ This IPEC 27A88 is an 8 channel, open drain driver with low ON resistance and integrated protection diodes for inductive load switching. Each output can sink 40mA and all outputs
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OCR Scan
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27A88
27A88
IPEC27A88
IPEC27AB8S/T
IPEC27A88S/R
IPEC27A88S
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PDF
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IRF 860
Abstract: AN1001
Text: PD -95441 SMPS MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free IRF6218PbF HEXFET Power MOSFET RDS on max -150V 150m:@VGS = -10V l Benefits l l l ID -27A D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including
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IRF6218PbF
-150V
AN1001)
O-220AB
-520A/
IRF 860
AN1001
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PDF
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Untitled
Abstract: No abstract text available
Text: PD -95441 SMPS MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free IRF6218PbF HEXFET Power MOSFET RDS on max -150V 150m:@VGS = -10V l Benefits l l l ID -27A D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including
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IRF6218PbF
-150V
AN1001)
O-220AB
-520A/Â
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marking 27A DIODE
Abstract: IRLZ34N IRF1010
Text: PD - _ IRLZ34N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS on = 0.035Ω ID = 27A Description Fifth Generation HEXFETs from International Rectifier
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IRLZ34N
O-220
IRF1010
marking 27A DIODE
IRLZ34N
IRF1010
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PDF
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IRF540N
Abstract: MOSFET IRF540n IRF1010 irf1010 applications
Text: PD - 9.1341 IRF540N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.052Ω ID = 27A Description Fifth Generation HEXFETs from International Rectifier
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IRF540N
O-220
IRF1010
IRF540N
MOSFET IRF540n
IRF1010
irf1010 applications
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PDF
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IRF 860
Abstract: AN1001
Text: PD -95441 SMPS MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free IRF6218PbF HEXFET Power MOSFET RDS on max -150V 150m:@VGS = -10V l Benefits l l l ID -27A D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including
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IRF6218PbF
-150V
AN1001)
O-220AB
-520A/
IRF 860
AN1001
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PDF
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IRF540N
Abstract: IRF1010
Text: Previous Datasheet Index Next Data Sheet PD - 9.1341 IRF540N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 100V RDS on = 0.052Ω ID = 27A Description
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IRF540N
O-220
commercial-indust10
IRF540N
IRF1010
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Untitled
Abstract: No abstract text available
Text: V23990-K233-F preliminary datasheet 2 nd gen. MiniSKiiP 2 600V/75A Features MiniSKiiP 2 Housing ● SixPack inverter topology ● Solder less interconnection ● Designed for motor drives up to 7 kW ● Fully compatible with Semikron pedant 27AC066V1 ● Temperature sensor
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V23990-K233-F
00V/75A
27AC066V1
55use
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PDF
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Sixpack
Abstract: No abstract text available
Text: V23990-K232-F-PM MiniSKiiP 2 PACK 600V/50A MiniSKiiP® 2 Housing Features ● SixPack inverter topology ● Solder less interconnection ● Designed for motor drives up to 7 kW ● Fully compatible with Semikron pedant 27AC066V1 ● Temperature sensor
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Original
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V23990-K232-F-PM
00V/50A
27AC066V1
Sixpack
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PDF
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IRF 860
Abstract: AN1001
Text: PD -95441 SMPS MOSFET VDSS Applications Reset Switch for Active Clamp Reset DC-DC converters l Lead-Free IRF6218PbF HEXFET Power MOSFET RDS on max -150V 150m:@VGS = -10V l Benefits l l l ID -27A D Low Gate to Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including
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Original
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IRF6218PbF
-150V
AN1001)
O-220AB
12-Mar-07
IRF 860
AN1001
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PDF
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