marking code 327 sot23
Abstract: 326 SOT
Text: Central' CMPD2005S Semiconductor Corp. SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2005S contains two 2 High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a
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CMPD2005S
OT-23
CPD80
OT-23
marking code 327 sot23
326 SOT
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Js MARKING CODE SOT23
Abstract: sot23 marking JS v
Text: Central CMPP6027 CMPP6028 Sem iconductor Corp. SURFACE MOUNT PROGRAMMABLE UNIJUNCTION SILI CON TRANSISTOR DESCRIPTION: The Central Semiconductor CMPP6027, CMPP6028 types are Silicon Programmable Unijunction Transistors, manufactured in a sur face mount SOT-23 package, designed for
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CMPP6027
CMPP6028
CMPP6027,
OT-23
05-September
Js MARKING CODE SOT23
sot23 marking JS v
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2FP TRANSISTOR
Abstract: 2gp Transistor BCB50C BC850 BCB50 marking 2Fp BC849C BC849 bc849b bc850c, sot23
Text: Philips Semiconductors Product specification NPN general purpose transistors BC849; BC850 FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector • General purpose switching and amplification.
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BC849;
BC850
BC859
BC860.
BC849
BC849B
BC849C
BC850
BC850B
BC850C
2FP TRANSISTOR
2gp Transistor
BCB50C
BCB50
marking 2Fp
BC849C
bc850c, sot23
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TRANSISTOR SMD MARKING CODE A45
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. PNP General Purpose Amplifier Transistor Surface Mount LMSB709LT1G FEATURE ƽSmall plastic SMD package. 3 ƽGeneral purpose amplification. ƽPb-Free Package is available. 2 DEVICE MARKING AND ORDERING INFORMATION 1 Device LMSB709LT1G
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LMSB709LT1G
LMSB709LT3G
3000/Tape
10000/Tape
OT-23
TRANSISTOR SMD MARKING CODE A45
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. NPN General Purpose Amplifier Transistors Surface Mount Pb-Free Package is available. LMSD601–RLT1G LMSD601–SLT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMSD601-RLT1G YR 3000/Tape&Reel LMSD601-RLT3G YR
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LMSD601â
LMSD601-RLT1G
3000/Tape
LMSD601-RLT3G
10000/Tape
LMSD601-SLT1G
LMSD601-SLT3G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode LBAS20HT1G z Pb-Free Package is Available. 1 z Device Marking: JR 1 CATHODE 2 ANODE 2 SOD– 323 MARKING DIAGRAM Ordering Information Device Marking Shipping LBAS20HT1G JR 3000/Tape&Reel LBAS20HT3G JR
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LBAS20HT1G
3000/Tape
LBAS20HT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed LM1MA141KT1G LM1MA142KT1G switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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LM1MA141KT1G
LM1MA142KT1G
70/SOTâ
OT-323/SC-70
3000/Tape
LM1MA141KT3G
10000/Tape
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diode T3 Marking
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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LM1MA141WKT1G
LM1MA142WKT1G
SC-70
70/SOTâ
LM1MA141WKT1G
diode T3 Marking
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish LBC817-40WT1G 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO 45 V Collector–Base Voltage
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LBC817-40WT1G
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SOD223
Abstract: SOD-223
Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching diodes LM1MA151WAT1G LM1MA152WAT1G These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC-59 package which is designed for low
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LM1MA151WAT1G
LM1MA152WAT1G
SC-59
-100mA
LM1MA151WAT3G
10000/Tape
3000/Tape
SOD223
SOD-223
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Untitled
Abstract: No abstract text available
Text: D5V0L4B5V ADVANCE INFORMATION 4 CHANNEL LOW CAPACITANCE BI-DIRECTIONAL TVS ARRAY Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 4 Channels of Bi-directional ESD Protection
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OT553
J-STD-020
MIL-STD-202,
DS35568
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAW56WT1G z Pb-Free Package is Available. 3 DEVICE MARKING 1 LBAW56WT1G = A1 2 MAXIMUM RATINGS TA = 25°C CASE 419–04, STYLE 4 Rating Symbol Max Unit Reverse Voltag VR Forward Current Peak Forward Surge Current
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LBAW56WT1G
3000/Tape
LBAW56WT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Featrues L2SA1037AKXLT1G z Pb-Free Package is Available. 3 ORDERING INFORMATION Device Shipping Package 1 L2SA1037AKXLT1G SOT23 3000/Tape & Reel L2SA1037AKXLT1G SOT23 10000/Tape & Reel 2 SOT– 23
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L2SA1037AKXLT1G
3000/Tape
10000/Tape
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Untitled
Abstract: No abstract text available
Text: Leshan Radio Co.Ltd General Purpose Transistors PNP Silicon ƽ Pb-Free Package is available. LBC807-16WT1G DEVICE MARKING AND ORDERING INFORMATION Device Marking Package Shipping LBC807-16WT1G 5A Pb-Free SOT-323 3000/Tape&Reel LBC807-25WT1G 5B (Pb-Free)
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LBC807-16WT1G
OT-323
3000/Tape
LBC807-25WT1G
LBC807-40WT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. HIGH VOLTAGE SWITCHING DIODE LBAS21HT1G 1 • Device Marking: JS 1 CATHODE • 2 ANODE 2 CASE 477, STYLE 1 SOD– 323 Pb-Free Package is Available. Ordering Information MARKING DIAGRAM Device Marking Shipping LBAS21HT1G JS 3000/Tape&Reel
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LBAS21HT1G
3000/Tape
LBAS21HT3G
10000/Tape
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PMBT4401
Abstract: No abstract text available
Text: • bbS3T31 OOaSAbT 327 H A P X N AMER PHILIPS/DISCRETE PMBT4401 b7E ]> SILICON PLANAR EPITAXIAL TRANSISTOR NPN silicon planar epitaxial transistor, housed in a SOT-23 envelope. It is intended for use in linear, switching, and general purpose applications.
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bbS3T31
PMBT4401
OT-23
PMBT4403.
OT-23
PMBT4401
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode LM1MA141WAT1G LM1MA142WAT1G This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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LM1MA141WAT1G
LM1MA142WAT1G
SC-70/SOT-323
OT-323/SC-70
3000/Tape
LM1MA141KWA3G
10000/Tape
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PDF
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Untitled
Abstract: No abstract text available
Text: D5V0L4B5V ADV AN CE I N FORM AT I ON 4 CHANNEL LOW CAPACITANCE BI-DIRECTIONAL TVS ARRAY Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 4 Channels of Bi-directional ESD Protection
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OT553
J-STD-020
DS35568
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA123EET1 PNP Silicon Surface Mount Transistors With Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor
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LDTA123EET1
SC-89
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Untitled
Abstract: No abstract text available
Text: bbsa'm odsmsti « apx Philips Semiconductors Product specification Silicon planar epitaxial high-speed diode N DESCRIPTION Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching applications. BAS55
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BAS55
bbS3131
7Z690B61
BAW62
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon Transistors • • • • SMBT 5086 SMBT 5087 For AF input stages and driver applications High current gain Low coliector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Type Marking Ordering Code tape and reel PinCContigui ation
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Q62702-M0002
Q68000-A8319
OT-23
fl235L
235b05
01225b?
5235b05
0122SLÃ
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LBZX84B5V1LT1G
Abstract: sot353 marking e5 LBZX84B10LT1G SC 2630 LBZX84B18LT1G LBZX84B27LT1G A5 SC-89 LBZX84B16LT1G marking J2 sot-23 ZENER marking a5 sot-23
Text: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators LBZX84B2V0LT1G SERIES 225 mW SOT-23 Surface Mount 3 FEATURES ƽNon-wire bonding structure improves 1 ƽHigh demand voltage range 3.6V-36V 2 ƽThis is a Pb-Free device CONSTRUCTION SOT– 23 ƽSilicon epitaxial planar
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LBZX84B2V0LT1G
OT-23
V-36V)
LBZX84B2V0LT1G
OT-23
3000/Tape
LBZX84B2V0LT3G
10000/Tape
360mm
LBZX84B5V1LT1G
sot353 marking e5
LBZX84B10LT1G
SC 2630
LBZX84B18LT1G
LBZX84B27LT1G
A5 SC-89
LBZX84B16LT1G
marking J2 sot-23
ZENER marking a5 sot-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulators LBZX84B2V0LT1G Series 225 mW SOT-23 Surface Mount 3 FEATURES ƽNon-wire bonding structure improves 1 ƽHigh demand voltage range 3.6V-36V 2 ƽThis is a Pb-Free device CONSTRUCTION SOT– 23 ƽSilicon epitaxial planar
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LBZX84B2V0LT1G
OT-23
V-36V)
LBZX84B2V0LT1G
OT-23
3000/Tape
LBZX84B2V0LT3G
10000/Tape
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PDF
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Digital transistors Features 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors see equivalent circuit). 2)The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the
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LDTD123ELT1G
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