PH 33D
Abstract: PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Marking codes TYPE NUMBER TO MARKING CODE MARKING CODE PACKAGE BY558 BY558 PH SOD115 SOD57 BY578 BY578 PH SOD115 SOD57 BY584 orange SOD61A 1N4004 PH SOD57 BY614
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BY558
BY558
OD115
BY578
BY578
BY584
OD61A
1N4004
BY614
PH 33D
PH 33G
BYW95C PH
BYM26C PH
BYV26E PH
BYW96E PH
BYV96E ph
33D-PH
33d ph
V10-40
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43B diode
Abstract: DIODE S 43a marking code 43b marking 43b diode 43b marking 43C marking JC diode 43B MARKING marking 43a marking code 43a
Text: Silicon PIN Diodes ● High-speed switching ● Phase shifting up to 10 GHz ● Power splitter BXY 43 Type Marking Ordering Code Pin Configuration Package1 BXY 43A – Q62702-X116 Cathode: black dot, T1 BXY 43B Q62702-X104 BXY 43C Q62702-X105 Maximum Ratings
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Q62702-X116
Q62702-X104
Q62702-X105
43B diode
DIODE S 43a
marking code 43b
marking 43b
diode 43b
marking 43C
marking JC diode
43B MARKING
marking 43a
marking code 43a
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2SC5053
Abstract: bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING
Text: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package 2SC5053 (MPT3) package marking: 2SC5053; CGit, where ★ is hFE code ¿s'* 4 .5 _ o-2 .i 1.6*0.1 UÌ Pc = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate
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OCR Scan
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2SC5053
SC-62)
2SC5053;
2SA1900
2SC5053
bo78
2SC5053 NPN
transistor bb3
marking code 43b
marking CODE 43B transistor
2SA1900
T100
Transistor npn
43B MARKING
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SMA0207S
Abstract: 3R36 erl+35+05 SMA0309S
Text: P a c k a g in g M eth o d s ^ O A L E j O s c illa to rs a n d R e s is to r N e tw o r k s HYBRID CRYSTAL CLOCK OSCILLATORS [Numbers In brackets Indicate millimeters] PACKAGING TUBE DIMENSIONS MODEL A B C QTY/TUBE XO-43B 0.570 [14.48] 0.550 [13.97] 16.30
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XO-43B
XO-42B,
XO-52B,
XO-43BH
XO-53B,
XO-54B,
XOVC-23
EIA-RS-296
IMS-5DKM-38
IMS-5SWD-65SWD-40
SMA0207S
3R36
erl+35+05
SMA0309S
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MIL-P-116
Abstract: XO-53B
Text: PACKAGING METHODS Oscillators and Resistor Networks HYBRID CRYSTAL CLOCK OSCILLATORS [Num bers In brackets Indicate m iW m etere] XO-43B XO-52B XOSM-52B, BE XO-53B XO-54B, BD, BE .550 [13.97] per Tube .570 [14.48] X O -4 3 B , X O -5 3 B , X O -5 4 B , BD, BE: 20 Pieces.
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OCR Scan
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XO-43B
XO-52B
XOSM-52B,
XO-53B
XO-54B,
ISC-1210
IMC-1210
IMC-1812
ISC-1812
ILB-1206
MIL-P-116
XO-53B
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itt ol 170
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET HAL300 Differential Hall Effect Sensor 1C A Edition June 14, 1995 62 5 1 -3 4 5 -3 P D 4bfl2711 QD0S231 43b ITT Semiconductors ITT HAL 300 PRELIMINARY DATA SHEET Differential Hall Effect Sensor 1C HAL 300 in CMOS technology Vsup Vsup
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OCR Scan
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HAL300
4bfl2711
QD0S231
itt ol 170
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Untitled
Abstract: No abstract text available
Text: _ 2.187 5 5 .5 5 .437 ;n.io) 1 . 1-313 (3 3 .3 5 ) NOTES: 1) VOLTAGE: 1 0 0 VDC. 2 ) CURRENT: 2 0 AMPS. 3 ) OPERATING TEMPERATURE: _ . b) (H 4) 5) 6) 7) 8) 9) > .200 (5 .0 8 ) R. TYP. RECOMMENDED CUTOUT MARKING: •MOUNTING HOLES AS REQUIRED #6—32UNC—2A THD
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OCR Scan
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52F16
6--32UNC--2A
--22AW
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PDF
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Untitled
Abstract: No abstract text available
Text: Chip Resistor Series 712 Package Dimensions Dimensions mm/inch Case Size L W T A 0.85 ± 0.10 0.45 ± 0.05 0603 1.60 ± 0.10 0.063 ± 0.004 0.033 ± 0.004 0.018 ± 0.002 1.30 ± 0.10 0.50 ± 0.05 0805 2.10 ± 0.10 0.083 ± 0.004 0.051 ± .004 0.020 ± 0.002
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7120603103J
1004F
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CTS 750 series
Abstract: 3570 1301 051 94v0 1052 schematic amplify CV 203 TMC 3162 3570 1301 PSA 88C Delco Electronics 3570 1301 151 Delco Electronics 185
Text: R E S I S T O R P R O D U C T S The CTS Resistor Products Catalog is also on the World Wide Web at www.ctscorp.com. The Web Catalog is updated regularly to provide all customers with the latest information on new products and improvements. You can also contact us at
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SOD-123 marking code 24
Abstract: zener sot23 marking MARKING CODE DO-214AC BZV55C4V3 1N5988B 1N6006B BZV55C6V2 BZV55C12 1N5994B BZV55C15
Text: TM Micro Commercial Components ZENER DIODES MCC Part Number Maximum Zener Impedance ‘B’ Suffix Only Maximum Reverse Leakage Current IR @ VR Max. Zener Voltage Temp Coefficient ‘B’ Suffix Only Nominal Zener Voltage Vz @ Izt Test Current IZT Volts mA
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DO-214AA
SMBJ5382B
SMBJ5383B
SMBJ5384B
SMBJ5385B
SMBJ5386B
SOD-123 marking code 24
zener sot23 marking
MARKING CODE DO-214AC
BZV55C4V3
1N5988B
1N6006B
BZV55C6V2
BZV55C12
1N5994B
BZV55C15
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Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M+ THRU 15KPFM1200-M+ Series 15000W AXIAL LEAD TRANSIENT VOLTAGE SUPPRESSOR 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V R-6 PACKAGE Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers
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5000W
OD-123+
FM120-M+
15KPFM1200-M
OD-123H
15KP200A
15KP200CA
15KP220A
15KP220CA
15KP240A
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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OCR Scan
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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Untitled
Abstract: No abstract text available
Text: Si823x 0 . 5 AND 4 . 0 A MP I S O D R I V E R S 2.5 AND 5 K V RMS Features Two completely isolated drivers 60 ns propagation delay (max) in one package Independent HS and LS inputs or Up to 5 kVRMS input-to-output PWM input versions
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Si823x
AEC-Q100
Si8230/1/2/7
Si8233/4/5/6/8
SOIC-16
SOIC-16
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Si8235-BA-C-IS1
Abstract: LGA 32 land pattern silicon labs Si8233 si8230 SI823 SI8233-B-IM Si8238BBCIS1 E257455 SI8238AB-C-IS1 Si8237BBBIS1
Text: Si823x 0 . 5 AND 4 . 0 A MP I S O D R I V E R S 2.5 AND 5 K V RMS Features Two completely isolated drivers 60 ns propagation delay (max) in one package Independent HS and LS inputs or Up to 5 kVRMS input-to-output PWM input versions
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Si823x
Si8230/1/2/7
SOIC-16
Si8233/4/5/6/8
LGA-14
Si8235-BA-C-IS1
LGA 32 land pattern silicon labs
Si8233
si8230
SI823
SI8233-B-IM
Si8238BBCIS1
E257455
SI8238AB-C-IS1
Si8237BBBIS1
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BFT65
Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Text: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions
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zener 73B
Abstract: marking code 46B SMC 1850 smc5346b MARKING 66b
Text: SMC53xxB SERIES Surface Mount Device 0.126 3.20 0.245 (6.22) 0.114 (2.90) 0.220 (5.59) 0.280 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.103 (2.62) 0.079 (2.06) PRIMARY CHARACTERISTICS 0.008 (0.203) Max. 0.060 (1.52) 0.030 (0.76) 0.320 (8.13) VRRM
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SMC53xxB
DO-214AB
UL94V-0
MIL-STD-202,
zener 73B
marking code 46B
SMC 1850
smc5346b
MARKING 66b
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PDF
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jco 8-3-b
Abstract: No abstract text available
Text: HCJ/KA/A027E/2000 PDF's 17.04.2000 13:52 Uhr Seite 61 JC 6 O 8HCJ 6.0 MH 3B 00/0 z 1-2 7 JCO 1 6 HC 6.0 M 4-3B J 00 Hz /01 -27 actual size JCO series • 5.0 Volt CMOS-TTL compatible oscillator type 5.0 Volt features • ultra compact metal package ■ packed in antistatic tubes
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HCJ/KA/A027E/2000
jco 8-3-b
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Untitled
Abstract: No abstract text available
Text: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability
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DO-214AA,
MIL-STD-750,
2002/95/EC
2012-REV
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PDF
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8v2b
Abstract: No abstract text available
Text: 1SMB3EZ4.7 SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts 0.155 3.94 • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability
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2002/95/EC
DO-214AA,
MIL-STD-750,
2012-REV
8v2b
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HFBR-X41XT
Abstract: Marking code 44t HEDS-9200 marking 44t HFBR-X41X
Text: HEWLETT-PACKARD/ CMPNTS blE T> • 4447S6M DQ08762 W hpl HEWLETT ■¿VU PACKARD 5 MBd Low Cost Fiber Optic Receiver Technical Data HFBR-24X2 Series Description The HFBR-24X2 fiber optic receiver is designed to operate with the Hewlett-Packard HFBR-14XX fiber optic
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OCR Scan
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4447S6M
DQ08762
HFBR-24X2
HFBR-0400
HFBR-14X2
HFBR-14X4
HFBR-24X4
HFBR-24X6
HFBR-X41XT
Marking code 44t
HEDS-9200
marking 44t
HFBR-X41X
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Untitled
Abstract: No abstract text available
Text: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance
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TS16949
AEC-Q101
2002/95/EC
2012-REV
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PDF
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Untitled
Abstract: No abstract text available
Text: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance
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Original
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TS16949
AECQ101
2002/95/EC
DO-214AA,
2012-REV
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PDF
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Untitled
Abstract: No abstract text available
Text: 1SMB3EZ4.7-AU SERIES GLASS PASSIVATED JUNCTION SILICON ZENER DIODES VOLTAGE 4.7 to 51 Volts POWER 3.0 Watts FEATURES 0.155 3.94 0.130(3.30) • Low profile package • Built-in strain relief 0.083(2.11) 0.075(1.91) • Glass passivated junction • Low inductance
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TS16949
AEC-Q101
2011/65/EU
IEC61249
2012-REV
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PDF
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43bh
Abstract: marking code 42ae marking JC 6f diode CXK77P18E160GB CXK77P36E160GB CXK77P36E160GB-4AE CXK77P36E160GB-4E 43AF marking 43AF
Text: SONY CXK77P36E160GB / CXK77P18E160GB 16Mb LW R-L HSTL High Speed Synchronous SRAMs 512K x 36 or 1M x 18 8Mb LW R-L w/ EC HSTL High Speed Synchronous SRAMs (256K x 36 or 512K x 18) 4/42/43/44 Preliminary Description The CXK77P36E160GB (organized as 524,288 words by 36 bits) and the CXK77P18E160GB (organized as 1,048,576 words
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CXK77P36E160GB
CXK77P18E160GB
CXK77P36E160GB
-100uA
43bh
marking code 42ae
marking JC 6f diode
CXK77P18E160GB
CXK77P36E160GB-4AE
CXK77P36E160GB-4E
43AF
marking 43AF
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