STAC2942F
Abstract: Part Marking ST mosfets marking code 8Ff 17122 RG316-25
Text: STAC2942F HF/VHF/UHF RF power N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source push-pull configuration ■ POUT = 350 W min. with 21 dB gain @ 175 MHz ■ In compliance with the 2002/95/EC European directive
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STAC2942F
2002/95/EC
STAC2942F
STAC244F
STAC2942FW
Part Marking ST mosfets
marking code 8Ff
17122
RG316-25
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DAC8550
Abstract: No abstract text available
Text: DA C8 550 DAC8550 www.ti.com SLAS476E – MARCH 2006 – REVISED MARCH 2012 16-BIT, ULTRA-LOW GLITCH, VOLTAGE OUTPUT DIGITAL-TO-ANALOG CONVERTER Check for Samples: DAC8550 FEATURES 1 • Relative Accuracy: 3LSB • Glitch Energy: 0.1nV-s • MicroPower Operation:
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DAC8550
SLAS476E
16-BIT,
DAC8550
16-bit
30MHz
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DAC8550
Abstract: No abstract text available
Text: DA C8 550 DAC8550 www.ti.com SLAS476E – MARCH 2006 – REVISED MARCH 2012 16-BIT, ULTRA-LOW GLITCH, VOLTAGE OUTPUT DIGITAL-TO-ANALOG CONVERTER Check for Samples: DAC8550 FEATURES 1 • Relative Accuracy: 3LSB • Glitch Energy: 0.1nV-s • MicroPower Operation:
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DAC8550
SLAS476E
16-BIT,
16-Bit
DAC8531/01
DAC8551
DAC8550
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25q80
Abstract: W25Q80B W25Q80BWSNIG W25Q80BWZPIG 0FC000 4x256 A22 MARKING soic8 w25q W25Q80BW
Text: W25Q80BW 1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: January 26, 2011 Preliminary - Revision A W25Q80BW Table of Contents 1. GENERAL DESCRIPTION . 5
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W25Q80BW
208-MIL
150/208-MIL,
25q80
W25Q80B
W25Q80BWSNIG
W25Q80BWZPIG
0FC000
4x256
A22 MARKING soic8
w25q
W25Q80BW
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25Q16CVSIG
Abstract: W25Q16C W25Q16CVSSIG 25q16 25Q16CVIG W25Q16CV W25Q16CVSNIG 25q16cvs DSA00916 A1512
Text: W25Q16CV 16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: January 4, 2010 Preliminary - Revision A W25Q16CV Table of Contents 1. GENERAL DESCRIPTION . 5
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W25Q16CV
16M-BIT
208-MIL
300-MIwarranted
25Q16CVSIG
W25Q16C
W25Q16CVSSIG
25q16
25Q16CVIG
W25Q16CV
W25Q16CVSNIG
25q16cvs
DSA00916
A1512
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Untitled
Abstract: No abstract text available
Text: MBM29LV800TA-70/-90 MBM29LV800BA-70/-90 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
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MBM29LV800TA-70/-90
MBM29LV800BA-70/-90
F0211
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MBM29LV800BA-70PFTN
Abstract: MBM29LV800TA-70PFTN MBM29LV800TA-90PFTN WLP 35 SAFETY MBM29LV800BA-90PFTN
Text: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
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F0211
MBM29LV800BA-70PFTN
MBM29LV800TA-70PFTN
MBM29LV800TA-90PFTN
WLP 35 SAFETY
MBM29LV800BA-90PFTN
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Untitled
Abstract: No abstract text available
Text: W25Q80BW 1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: April 24, 2014 Revision K W25Q80BW Table of Contents 1. GENERAL DESCRIPTIONS . 5
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W25Q80BW
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SUPER CHIP
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-5E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(I), 44-pin SOP, and 48-ball FBGA
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DS05-20845-5E
8/512K
MBM29LV800TA-70/-90/MBM29LV800BA-70/-90
MBM29LV800TA/BA
48-pin
44-pin
48-ball
SUPER CHIP
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MBM29LV800TA-70PF
Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV800BA-70PFTN cost
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-6E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(1), 44-pin SOP, and 48-ball FBGA
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DS05-20845-6E
8/512K
MBM29LV800TA-70/-90/MBM29LV800BA-70/-90
MBM29LV800TA/BA
48-pin
44-pin
48-ball
F0211
MBM29LV800TA-70PF
FPT-48P-M19
FPT-48P-M20
MBM29LV800BA-70PFTN cost
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-5E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(I), 44-pin SOP, and 48-ball FBGA
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DS05-20845-5E
8/512K
MBM29LV800TA-70/-90/MBM29LV800BA-70/-90
MBM29LV800TA/BA
48-pin
44-pin
48-ball
F0207
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Untitled
Abstract: No abstract text available
Text: W25Q80BW 1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: July 30, 2013 Revision J W25Q80BW Table of Contents 1. GENERAL DESCRIPTIONS. 5
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W25Q80BW
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W25Q80BWBYIG
Abstract: 896KB W25Q80BW 6X5 TUBE winbond w25q
Text: W25Q80BW 1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: November 19, 2012 Revision I W25Q80BW Table of Contents 1. GENERAL DESCRIPTIONS . 5
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W25Q80BW
208-mil
W25Q80BWBYIG
896KB
W25Q80BW
6X5 TUBE
winbond w25q
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FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-5E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball
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DS05-20871-5E
MBM29SL800TD/BD-10/12
MBM29SL800TD/BD
48-pin
48-ball
48-ball
MBM29SL800TD/MBM29SL800BD
F0210
FPT-48P-M19
FPT-48P-M20
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28F008SA
Abstract: LH28F008SCT-L12 LHF08CH3
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F008SCT-L12 Flash Memory 8M 1M x8 (Model No.: LHF08CH3) Spec No.: EL104164B Issue Date: May 7, 1999 SHARP LHF08CH3 l Handle this document carefully for it contains material protected by international
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LH28F008SCT-L12
LHF08CH3)
EL104164B
LHF08CH3
28F008SA
LH28F008SCT-L12
LHF08CH3
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MBM29LV800TA-70
Abstract: MBM29LV800BA-90PFTN
Text: MBM29LV800TA -70/-90/ MBM29LV800BA -70/-90 90-70/-90 Data Sheet Retired Product MBM29LV800TA -70/- /MBM29LV800BA Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only.
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MBM29LV800TA
MBM29LV800BA
MBM29LV800TA
/MBM29LV800BA
MBM29LV800TA/BA
DS05-20845-7E
MBM29LV800TA-70
MBM29LV800BA-90PFTN
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20871-4E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TD/BD-10/12 • DESCRIPTION The MBM29SL800TD/BD are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TD/BD are offered in a 48-pin TSOP (I) , 48-ball FBGA and 48-ball
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DS05-20871-4E
MBM29SL800TD/BD-10/12
MBM29SL800TD/BD
48-pin
48-ball
48-ball
MBM29SL800TD/MBM29SL800BD
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FY220
Abstract: FW221 EM28C1602C3FL
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM28C1602C3FL Advance Information EM28C1602C3FL Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View
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EM28C1602C3FL
66-Ball
32K-word
128K-words
3134-A
FY220
FW221
EM28C1602C3FL
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Untitled
Abstract: No abstract text available
Text: F L m A S H M E M O 1 M x R Y 8 /5 1 2 K x 1 6 yMDbA M A O¿ yQ lL V n n Tl i. .0,1.^/AADlJIOO V /Q oUU 2/ M d » LV 80 BIT Wife, , ,., . • FEA TU RES • Single 3.0 V read, program, and erase
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48-pin
44-pin
46-pin
F9704
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PDF
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Untitled
Abstract: No abstract text available
Text: W25Q80BW 1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: September 01, 2014 Revision L W25Q80BW Table of Contents 1. GENERAL DESCRIPTIONS . 5
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W25Q80BW
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ES651
Abstract: EM28C1604C3FL
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM28C1604C3FL Advance Information EM28C1604C3FL Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY FEATURES BALL ASSIGNMENT 66-Ball FBGA Top View
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EM28C1604C3FL
66-Ball
32K-word
256K-words
3133-A
ES651
EM28C1604C3FL
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PDF
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W25Q80BW
Abstract: 25q80 W25Q80BWSSIG W25Q80BWBYIG W25Q80BWSNIG W25Q80B
Text: W25Q80BW 1.8V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: June 21, 2012 Preliminary - Revision F W25Q80BW Table of Contents 1. GENERAL DESCRIPTION . 5
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W25Q80BW
208-mil
W25Q80BW
25q80
W25Q80BWSSIG
W25Q80BWBYIG
W25Q80BWSNIG
W25Q80B
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AM29F040B date code marking information
Abstract: AM29F040B PART MARKING marking CODE SA2 marking AM29F040B SA29 170000H Am29LV200BB sa29 pinout 00000H Am29LV002T
Text: ExpressFlashTM Code Approval Form Section 1: CODE TRANSMITTAL AND ORDERING INFORMATION SECTION Date _ CUSTOMER INFORMATION 1. Company Name _ 2. Customer Contact Name _ 3. Contact’s Phone No. _ 4. AMD Salesperson _
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Untitled
Abstract: No abstract text available
Text: MBM29SL800TD-10/12 MBM29SL800BD-10/12 Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and Fujitsu.
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MBM29SL800TD-10/12
MBM29SL800BD-10/12
F0210
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PDF
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