DMN62D1SFB
Abstract: No abstract text available
Text: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADVANCE INFORMATION 60V Features and Benefits 2 RDS(on) Max ID Max @ TA = +25°C • Footprint of just 0.6mm – thirteen times smaller than SOT23 Low On-Resistance 1.4 @ VGS= 10V
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DMN62D1SFB
DS35252
DMN62D1SFB
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PDF
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DMN62D1SFB
Abstract: No abstract text available
Text: DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on Max ID Max @ TA = +25C • Footprint of just 0.6mm – thirteen times smaller than SOT23 Low On-Resistance 1.4 @ VGS= 10V 0.41A Low Gate Threshold Voltage 1.6 @ VGS= 4.5V
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DMN62D1SFB
DS35252
DMN62D1SFB
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V -0.57A 2 Footprint of just 0.6mm – thirteen times smaller than SOT23
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DMP21D0UFB4
AEC-Q101
DS35279
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • 0.4mm ultra low profile package for thin application 0.9A 0.6mm package footprint, 10 times smaller than SOT23 Low VGS th , can be driven directly from a battery
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DMN3730UFB4
AEC-Q101
DS35017
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V -0.57A 2 Footprint of just 0.6mm – thirteen times smaller than SOT23
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DMP21D0UFB4
AEC-Q101
DS35279
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PDF
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Untitled
Abstract: No abstract text available
Text: REV. 1.0 FS361-DS-10_EN Datasheet FS361 One Cell Lithium-ion/Polymer Battery Protection IC Mar. 2007 FS361 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251, Taiwan Tel.：886-2-28094742
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FS361-DS-10
FS361
FS361
700REF
FS361B
FS361C
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS= 4.5V 240mΩ @ VGS= 2.5V 360mΩ @ VGS= 1.8V • • • • • • • • ID max TA = 25°C (Notes 4)
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DMN2300UFB4
AEC-Q101
DS35269
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V • • • • • • • • ID max TA = 25°C
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Original
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DMN2300UFB4
AEC-Q101
DS35269
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PDF
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DMN62D1SFB
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADVANCE INFORMATION V BR DSS Features and Benefits RDS(on) Max ID Max @ TA = 25°C 1.4Ω @ VGS= 10V 0.41A 1.6Ω @ VGS= 4.5V 0.38A 60V Description and Applications
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Original
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DMN62D1SFB
AEC-Q101
DS35252
DMN62D1SFB
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PDF
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DFN1006H4-3
Abstract: DMN2300UFB4 DMN2300UFB4-7B dmn2300u
Text: A Product Line of Diodes Incorporated DMN2300UFB4 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS = 4.5V 240mΩ @ VGS = 2.5V 360mΩ @ VGS = 1.8V • • • • • • • • ID max TA = 25°C
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Original
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DMN2300UFB4
AEC-Q101
DS35269
DFN1006H4-3
DMN2300UFB4
DMN2300UFB4-7B
dmn2300u
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PDF
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Untitled
Abstract: No abstract text available
Text: LTC4280 Hot Swap Controller with 2 I C Compatible Monitoring FEATURES n n n n n n n n n n n n DESCRIPTION Allows Safe Insertion into Live Backplane 8-Bit ADC Monitors Current and Voltage I2C/SMBus Interface Wide Operating Voltage Range: 2.9V to 15V Adjustable Overcurrent Filter Time
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LTC4280
24-Pin
10-Bit
LTC4245
LTC4260
LTC4261
4280f
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FDC653N
Abstract: LTC4280 LTC4280C LTC4280CUFD LTC4280I P6KE16A lt 4280
Text: LTC4280 Hot Swap Controller with 2 I C Compatible Monitoring FEATURES DESCRIPTION n The LTC 4280 Hot Swap controller allows a board to be safely inserted and removed from a live backplane. Using an external N-channel pass transistor, board supply voltage
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LTC4280
10-Bit
LTC4245
LTC4260
LTC4261
4280f
FDC653N
LTC4280
LTC4280C
LTC4280CUFD
LTC4280I
P6KE16A
lt 4280
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DMN3730
Abstract: No abstract text available
Text: DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance
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DMN3730UFB4
AEC-Q101
DS35017
DMN3730
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PDF
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Untitled
Abstract: No abstract text available
Text: DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance
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DMN3730UFB4
AEC-Q101
DS35017
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PDF
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DFN1006-3
Abstract: DMN2300UFB DMN2300UFB-7 DMN2300UFB-7B
Text: A Product Line of Diodes Incorporated DMN2300UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS= 4.5V 240mΩ @ VGS= 2.5V 360mΩ @ VGS= 1.8V • • • • • • • • • ID max TA = 25°C
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DMN2300UFB
DS35235
DFN1006-3
DMN2300UFB
DMN2300UFB-7
DMN2300UFB-7B
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PDF
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DFN1006H4-3
Abstract: DMN3730UFB4 DMN3730UFB4-7
Text: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data
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Original
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DMN3730UFB4
DS35017
DFN1006H4-3
DMN3730UFB4
DMN3730UFB4-7
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PDF
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DMN62D1SFB
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN62D1SFB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary ADV AN CE I N FORM AT I ON V BR DSS Features and Benefits RDS(on) Max ID Max @ TA = 25°C 1.4Ω @ VGS= 10V 0.41A 1.6Ω @ VGS= 4.5V 0.38A 60V Description and Applications
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Original
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DMN62D1SFB
DS35252
DMN62D1SFB
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN2300UFB 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) 20V 175mΩ @ VGS= 4.5V 240mΩ @ VGS= 2.5V 360mΩ @ VGS= 1.8V • • • • • • • • • ID max TA = 25°C
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DMN2300UFB
DS35235
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PDF
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dmn3730ufb4
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data
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Original
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DMN3730UFB4
AEC-Q101
DS35017
dmn3730ufb4
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PDF
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DFN1006-3
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMP21D0UFB 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Max V BR DSS RDS(on) Max @ TA = 25°C (Note 4) -20V 495mΩ @ VGS = -4.5V -0.77A 690mΩ @ VGS = -2.5V -0.67A 960mΩ @ VGS = -1.8V
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Original
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DMP21D0UFB
AEC-Q101
DS35277
DFN1006-3
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PDF
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marking P6
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMP31D0UFB4 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -30V Features and Benefits • • • • • • • • Max ID Max RDS(on) @ TA = 25°C 1Ω @ VGS = -4.5V -0.76A 1.5Ω @ VGS = -2.5V -0.62A
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DMP31D0UFB4
AEC-Q101
DS35587
marking P6
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMP21D0UFB4 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -20V Features and Benefits RDS(on) ID @ TA = 25°C 400mΩ @ VGS = -4.5V -0.8A 600mΩ @ VGS = -2.5V -0.65A 900mΩ @ VGS = -1.8V -0.56A • • •
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DMP21D0UFB4
AEC-Q101
DS35279
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PDF
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DMN3730
Abstract: DFN1006-3 DMN3730UFB DMN3730UFB-7 MARKING NE
Text: A Product Line of Diodes Incorporated DMN3730UFB 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • • • ID RDS(on) TA = 25°C 460mΩ @ VGS= 4.5V 0.9A 560mΩ @ VGS= 2.5V 0.7A 30V Mechanical Data
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Original
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DMN3730UFB
DS35018
DMN3730
DFN1006-3
DMN3730UFB
DMN3730UFB-7
MARKING NE
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMP31D0UFB4 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS -30V Features and Benefits • • • • • • • • Max ID Max RDS(on) @ TA = 25°C 1Ω @ VGS = -4.5V -0.76A 1.5Ω @ VGS = -2.5V -0.62A
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DMP31D0UFB4
AEC-Q101
DS35587
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