R1Q2A7236
Abstract: No abstract text available
Text: R1Q2A7236 / R1Q2A7218 / R1Q2A7209 Series R1Q2A7236ABG Series R1Q2A7218ABG Series R1Q2A7209ABG Series 72-Mbit QDR II SRAM 2-word Burst Rev. 0.08a 2011.05.23 Description The R1Q2A7236 is a 2,097,152-word by 36-bit, the R1Q2A7218 is a 4,194,304-word by 18-bit, and the
|
Original
|
R1Q2A7236
R1Q2A7218
R1Q2A7209
R1Q2A7236ABG
R1Q2A7218ABG
R1Q2A7209ABG
72-Mbit
152-word
36-bit,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1QAA72 / R1QDA72 Series R1QAA7236ABG / R1QAA7218ABG / R1QAA7209ABG R1QDA7236ABG / R1QDA7218ABG / R1QDA7209ABG R1QGA7236ABG / R1QGA7218ABG / R1QGA7209ABG R1QKA7236ABG / R1QKA7218ABG / R1QKA7209ABG
|
Original
|
0000---QDRII+
R1QAA72
R1QDA72
R1QAA7236ABG
R1QAA7218ABG
R1QAA7209ABG
R1QDA7236ABG
R1QDA7218ABG
R1QDA7209ABG
R1QGA7236ABG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1Q4A7236 / R1Q4A7218 / R1Q4A7209 Series R1Q4A7236ABG Series R1Q4A7218ABG Series R1Q4A7209ABG Series 72-Mbit DDRII SRAM 2-word Burst Rev. 0.08a 2011.05.23 Description The R1Q4A7236 is a 2,097,152-word by 36-bit, the R1Q4A7218 is a 4,194,304-word by 18-bit, and the
|
Original
|
R1Q4A7236
R1Q4A7218
R1Q4A7209
R1Q4A7236ABG
R1Q4A7218ABG
R1Q4A7209ABG
72-Mbit
152-word
36-bit,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 72QM2 R1Q3A7236 / R1Q3A7218 / R1Q3A7209 Series R1Q3A7236ABG Series R1Q3A7218ABG Series R1Q3A7209ABG Series 72-Mbit QDR II SRAM 4-word Burst Rev. 0.08a 2011.05.23 Description The R1Q3A7236 is a 2,097,152-word by 36-bit, the R1Q3A7218 is a 4,194,304-word by 18-bit, and the
|
Original
|
72QM2
R1Q3A7236
R1Q3A7218
R1Q3A7209
R1Q3A7236ABG
R1Q3A7218ABG
R1Q3A7209ABG
72-Mbit
152-word
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1QHA72 / R1QLA72 Series R1QBA7236ABG / R1QBA7218ABG / R1QBA7209ABG R1QEA7236ABG / R1QEA7218ABG / R1QEA7209ABG R1QHA7236ABG / R1QHA7218ABG / R1QHA7209ABG R1QLA7236ABG / R1QLA7218ABG / R1QLA7209ABG 72-Mbit DDRII+ SRAM 2-word Burst Rev. 0.08a 2011.05.23 Description
|
Original
|
R1QHA72
R1QLA72
R1QBA7236ABG
R1QBA7218ABG
R1QBA7209ABG
R1QEA7236ABG
R1QEA7218ABG
R1QEA7209ABG
R1QHA7236ABG
R1QHA7218ABG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1QBA72 / R1QEA72 Series R1QBA7236ABG / R1QBA7218ABG / R1QBA7209ABG R1QEA7236ABG / R1QEA7218ABG / R1QEA7209ABG R1QHA7236ABG / R1QHA7218ABG / R1QHA7209ABG R1QLA7236ABG / R1QLA7218ABG / R1QLA7209ABG 72-Mbit DDRII+ SRAM 2-word Burst Rev. 0.08a 2011.05.23 Description
|
Original
|
R1QBA72
R1QEA72
R1QBA7236ABG
R1QBA7218ABG
R1QBA7209ABG
R1QEA7236ABG
R1QEA7218ABG
R1QEA7209ABG
R1QHA7236ABG
R1QHA7218ABG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1QAA36*CB* / R1QDA36*CB* Series R1QAA3636CBG / R1QAA3618CBG / R1QAA3609CBG R1QDA3636CBG / R1QDA3618CBG / R1QDA3609CBG R1QGA3636CBG / R1QGA3618CBG / R1QGA3609CBG
|
Original
|
0000---QDRII+
R1QAA36*
R1QDA36*
R1QAA3636CBG
R1QAA3618CBG
R1QAA3609CBG
R1QDA3636CBG
R1QDA3618CBG
R1QDA3609CBG
R1QGA3636CBG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1QCA36*CB* / R1QFA36*CB* Series R1QCA3636CBG / R1QCA3618CBG / R1QCA3609CBG R1QFA3636CBG / R1QFA3618CBG / R1QFA3609CBG R1QJA3636CBG / R1QJA3618CBG / R1QJA3609CBG R1QMA3636CBG / R1QMA3618CBG / R1QMA3609CBG
|
Original
|
0000---DDRII+
R1QCA36*
R1QFA36*
R1QCA3636CBG
R1QCA3618CBG
R1QCA3609CBG
R1QFA3636CBG
R1QFA3618CBG
R1QFA3609CBG
R1QJA3636CBG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: - 00000.0000.0000.0000.0000-QDRII+_RL20 R1QGA36*CB* / R1QKA36*CB* Series R1QAA3636CBG / R1QAA3618CBG / R1QAA3609CBG R1QDA3636CBG / R1QDA3618CBG / R1QDA3609CBG R1QGA3636CBG / R1QGA3618CBG / R1QGA3609CBG
|
Original
|
0000--QDRII+
R1QGA36*
R1QKA36*
R1QAA3636CBG
R1QAA3618CBG
R1QAA3609CBG
R1QDA3636CBG
R1QDA3618CBG
R1QDA3609CBG
R1QGA3636CBG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1Q6A7236ABG / R1Q6A7218ABG Series R1Q6A7236ABG R1Q6A7218ABG 72-Mbit DDRII SRAM Separate I/O 2-word Burst R10DS0179EJ0011 Rev. 0.11 2013.01.15 Description The R1Q6A7236 is a 2,097,152-word by 36-bit and the R1Q6A7218 is a 4,194,304-word by 18-bit synchronous
|
Original
|
R1Q6A7236ABG
R1Q6A7218ABG
R1Q6A7218ABG
72-Mbit
R1Q6A7236
152-word
36-bit
R1Q6A7218
304-word
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1QCA72 / R1QFA72 Series R1QCA7236ABB / R1QCA7218ABB R1QFA7236ABB / R1QFA7218ABB 72-Mbit DDRII+ SRAM 4-word Burst R10DS0171EJ0011 Rev. 0.11 2013.01.15 Description The R1Q#A7236 is a 2,097,152-word by 36-bit and the R1Q#A7218 is a 4,194,304-word by 18-bit synchronous
|
Original
|
R1QCA72
R1QFA72
R1QCA7236ABB
R1QCA7218ABB
R1QFA7236ABB
R1QFA7218ABB
72-Mbit
A7236
152-word
36-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1QJA72 / R1QMA72 Series R1QJA7236ABG / R1QJA7218ABG R1QMA7236ABG / R1QMA7218ABG 72-Mbit DDRII+ SRAM 4-word Burst R10DS0185EJ0011 Rev. 0.11 2013.01.15 Description The R1Q#A7236 is a 2,097,152-word by 36-bit and the R1Q#A7218 is a 4,194,304-word by 18-bit synchronous
|
Original
|
R1QJA72
R1QMA72
R1QJA7236ABG
R1QJA7218ABG
R1QMA7236ABG
R1QMA7218ABG
72-Mbit
A7236
152-word
36-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1QCA72 / R1QFA72 Series R1QCA7236ABG / R1QCA7218ABG R1QFA7236ABG / R1QFA7218ABG 72-Mbit DDRII+ SRAM 4-word Burst R10DS0182EJ0011 Rev. 0.11 2013.01.15 Description The R1Q#A7236 is a 2,097,152-word by 36-bit and the R1Q#A7218 is a 4,194,304-word by 18-bit synchronous
|
Original
|
R1QCA72
R1QFA72
R1QCA7236ABG
R1QCA7218ABG
R1QFA7236ABG
R1QFA7218ABG
72-Mbit
A7236
152-word
36-bit
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1Q6A7236ABB / R1Q6A7218ABB Series R1Q6A7236ABB R1Q6A7218ABB 72-Mbit DDRII SRAM Separate I/O 2-word Burst R10DS0168EJ0011 Rev. 0.11 2013.01.15 Description The R1Q6A7236 is a 2,097,152-word by 36-bit and the R1Q6A7218 is a 4,194,304-word by 18-bit synchronous
|
Original
|
R1Q6A7236ABB
R1Q6A7218ABB
R1Q6A7218ABB
72-Mbit
R1Q6A7236
152-word
36-bit
R1Q6A7218
304-word
|
PDF
|
|
KA7218
Abstract: No abstract text available
Text: R1Q2A7236ABG / R1Q2A7218ABG / R1Q2A7209ABG Series R1Q2A7236ABG R1Q2A7218ABG R1Q2A7209ABG 72-Mbit QDR II SRAM 2-word Burst R10DS0175EJ0011 Rev. 0.11 2013.01.15 Description The R1Q2A7236 is a 2,097,152-word by 36-bit, the R1Q2A7218 is a 4,194,304-word by 18-bit, and the
|
Original
|
R1Q2A7236ABG
R1Q2A7218ABG
R1Q2A7209ABG
R1Q2A7209ABG
72-Mbit
R1Q2A7236
152-word
36-bit,
KA7218
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 72DM4 R1Q5A7236ABG / R1Q5A7218ABG Series R1Q5A7236ABG R1Q5A7218ABG 72-Mbit DDRII SRAM 4-word Burst R10DS0178EJ0011 Rev. 0.11 2013.01.15 Description The R1Q5A7236 is a 2,097,152-word by 36-bit and the R1Q5A7218 is a 4,194,304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor
|
Original
|
72DM4
R1Q5A7236ABG
R1Q5A7218ABG
R1Q5A7218ABG
72-Mbit
R1Q5A7236
152-word
36-bit
R1Q5A7218
|
PDF
|
Untitled
Abstract: No abstract text available
Text: R1QJA72 / R1QMA72 Series R1QJA7236ABB / R1QJA7218ABB R1QMA7236ABB / R1QMA7218ABB 72-Mbit DDRII+ SRAM 4-word Burst R10DS0174EJ0011 Rev. 0.11 2013.01.15 Description The R1Q#A7236 is a 2,097,152-word by 36-bit and the R1Q#A7218 is a 4,194,304-word by 18-bit synchronous
|
Original
|
R1QJA72
R1QMA72
R1QJA7236ABB
R1QJA7218ABB
R1QMA7236ABB
R1QMA7218ABB
72-Mbit
A7236
152-word
36-bit
|
PDF
|
R1Q2A7236ABB
Abstract: No abstract text available
Text: R1Q2A7236ABB / R1Q2A7218ABB / R1Q2A7209ABB Series R1Q2A7236ABB R1Q2A7218ABB R1Q2A7209ABB 72-Mbit QDR II SRAM 2-word Burst R10DS0164EJ0011 Rev. 0.11 2013.01.15 Description The R1Q2A7236 is a 2,097,152-word by 36-bit, the R1Q2A7218 is a 4,194,304-word by 18-bit, and the
|
Original
|
R1Q2A7236ABB
R1Q2A7218ABB
R1Q2A7209ABB
R1Q2A7209ABB
72-Mbit
R1Q2A7236
152-word
36-bit,
|
PDF
|
marking code HFr
Abstract: HEP 311
Text: 3.0SMCJ SERIES LITE-ON SEMICONDUCTOR Bi-Directional device is under development SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS STAND-OFF VOLTAGE - 5.0 to 170 Volts POWER DISSIPATION - 3000 WATTS FEATURES For surface mounted applications
|
Original
|
0SMCJ130A
0SMCJ130CA
0SMCJ150A
0SMCJ150CA
0SMCJ160A
0SMCJ160CA
0SMCJ170A
0SMCJ170CA
marking code HFr
HEP 311
|
PDF
|
marking code HFr
Abstract: No abstract text available
Text: 3.0SMCJ SERIES LITE-ON SEMICONDUCTOR Bi-Directional device is under development SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS STAND-OFF VOLTAGE - 5.0 to 170 Volts POWER DISSIPATION - 3000 WATTS FEATURES For surface mounted applications
|
Original
|
0SMCJ150A
0SMCJ160A
0SMCJ170A
marking code HFr
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 72QM2 R1Q3A7236ABB / R1Q3A7218ABB Series R1Q3A7236ABB R1Q3A7218ABB 72-Mbit QDR II SRAM 4-word Burst R10DS0165EJ0011 Rev. 0.11 2013.01.15 Description The R1Q3A7236 is a 2,097,152-word by 36-bit and the R1Q3A7218 is a 4,194,304-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory
|
Original
|
72QM2
R1Q3A7236ABB
R1Q3A7218ABB
R1Q3A7218ABB
72-Mbit
R1Q3A7236
152-word
36-bit
R1Q3A7218
|
PDF
|
marking r2k
Abstract: marking r1c GAJ SOT23 R1P SOT-223
Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) •N P N Transistors General purpose small signal amplifiers SST SMT BV qbo Min. BV ceo Min. b v EB0 Min. SSTH30 MMST1130 30V 25V 5V SST5088 MMST5088 35V 30V 4.6V 'f° Max. @VCB . hF.E.
|
OCR Scan
|
OT-23)
SSTH30
MMST1130
SC-59/Japanese
BCX70K
BCX71G
BCX71H
BCX71J
BFS17
marking r2k
marking r1c
GAJ SOT23
R1P SOT-223
|
PDF
|
sot23 marking code 8pf
Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V
|
OCR Scan
|
OT-23)
SC-59/Japanese
SST1130
MMST1130
200mA
SST5088
MMST5088
100nA
SST5089
sot23 marking code 8pf
marking r2k
R2Z SOT23
SSTA29
G1F G1K G3F
MARKING CODE B25 SOT23-5
|
PDF
|
LM 805 CV
Abstract: No abstract text available
Text: SMBJ5.0 - SMBJ170CA SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS INCORPORATED Features • • • • • • 600 W atts Peak Pulse Power Dissipation 5.0 - 1 7 0 V Standoff Voltages Constructed with Glass Passivated Die Excellent Clamping Capability
|
OCR Scan
|
SMBJ170CA
SMBJ150
SMBJ160
SMBJ170
LM 805 CV
|
PDF
|