Diode SMA marking code ye
Abstract: smd diode marking sG 13 DO-214AC diode marking SD smd code marking YL
Text: Comchip SMD Transient Voltage Suppressor SMD Diode Specialist TV04A5V0-HF Thru. TV04A441-HF Working Peak Reverse Voltage: 5.0 to 440 Volts Power Dissipation: 400 Watts RoHS Device Halogen Free SMA/DO-214AC Features - Glass passivated chip. 0.179 4.55 0.162(4.10)
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TV04A5V0-HF
TV04A441-HF
SMA/DO-214AC
QW-JTV01
Diode SMA marking code ye
smd diode marking sG 13
DO-214AC diode marking SD
smd code marking YL
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DIODE smd marking 702
Abstract: diode smd marking code 421 DIODE SMD MARKING CODE 702 suppressor diode smd 5pha 5pfm 4008 SMD DIODE TV50C110K SMD MARKING CODE 529 308 smd marking
Text: Comchip SMD Transient Voltage Suppressor SMD Diode Specialist TV50C110-G Thru. TV50C441-G Working Peak Reverse Voltage: 11 to 440 Volts Power Dissipation: 5000 Watts RoHS Device Features DO-214AB SMC -Glass passivated chip. -5000W peak pulse power capability with a
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TV50C110-G
TV50C441-G
-5000W
DO-214AB
DO-214AB
MIL-STD-750,
QW-BTV14
DIODE smd marking 702
diode smd marking code 421
DIODE SMD MARKING CODE 702
suppressor diode smd
5pha
5pfm
4008 SMD DIODE
TV50C110K
SMD MARKING CODE 529
308 smd marking
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220v Ac- 12v Dc transformer 60Hz
Abstract: 6v step down transformers ASW21K22 step down transformer NEMA A600 step down transformer 220V to 12V 230 to 24v step down transformer APW-199 12v to 220v step up transformer ABGW-400
Text: Switches & Pilot Devices ø22mm - TW Series Switches & Pilot Devices TW Series — 22mm NEMA Style Pushbuttons Signaling Lights Relays & Sockets Key features: UL Listed File No. E68961 CSA Approved File No. LR21451 IDEC has your 22mm switching needs covered.
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800-262-IDEC
220v Ac- 12v Dc transformer 60Hz
6v step down transformers
ASW21K22
step down transformer
NEMA A600
step down transformer 220V to 12V
230 to 24v step down transformer
APW-199
12v to 220v step up transformer
ABGW-400
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Untitled
Abstract: No abstract text available
Text: SMAJ HV SERIES creat by art 400 Watts Suface Mount Transient Voltage Suppressor SMA/DO-214AC Features For surface mounted application Low profile package Built-in strain relief Glass passivated junction Excellent clamping capability Fast response time: Typically less than 1.0ps from
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SMA/DO-214AC
J-STD-020,
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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OCR Scan
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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SC-75
Abstract: SiB408DK-T1-GE3
Text: New Product SiB408DK Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.040 at VGS = 10 V 7a 0.050 at VGS = 4.5 V 7a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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SiB408DK
SC-75
2002/95/EC
SC-75-6L-Single
SiB40lectual
18-Jul-08
SiB408DK-T1-GE3
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mosfet 1216
Abstract: SiM400 SOT923
Text: New Product SiM400 Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 3.9 at VGS = 10 V 0.35 4.8 at VGS = 4.5 V 0.35 8.0 at VGS = 3.5 V 0.35 VDS (V) 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiM400
2002/95/EC
OT-923
SiM400-T1-GE3
18-Jul-08
mosfet 1216
SiM400
SOT923
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Si5456DU
Abstract: No abstract text available
Text: Si5456DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.010 at VGS = 10 V 12 0.0135 at VGS = 4.5 V 12 Qg (Typ.) 9.8 nC PowerPAK ChipFET Single 1 2 D 3 D D G D 7 S 6 S D APPLICATIONS 4 D D 8 • Halogen-free According to IEC 61249-2-21
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Si5456DU
2002/95/EC
18-Jul-08
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SC-75
Abstract: SiB457EDK-T1-GE3
Text: New Product SiB457EDK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.035 at VGS = - 4.5 V - 9a 0.049 at VGS = - 2.5 V - 9a 0.072 at VGS = - 1.8 V - 9a 0.130 at VGS = - 1.5 V -2 • Halogen-free According to IEC 61249-2-21
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SiB457EDK
SC-75
2002/95/EC
SC-75-6L-Single
18-Jul-08
SiB457EDK-T1-GE3
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SC-75
Abstract: SiB457EDK-T1-GE3 68A6
Text: New Product SiB457EDK Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.035 at VGS = - 4.5 V - 9a 0.049 at VGS = - 2.5 V - 9a 0.072 at VGS = - 1.8 V - 9a 0.130 at VGS = - 1.5 V -2 • Halogen-free According to IEC 61249-2-21
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SiB457EDK
SC-75
2002/95/EC
SC-75-6L-Single
18-Jul-08
SiB457EDK-T1-GE3
68A6
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a complete circuit diagram of a surge suppressor
Abstract: marking B12 diode 300W PURE SINE WAVE diode marking code B12
Text: SMAJ HV SERIES creat by art 400 Watts Suface Mount Transient Voltage Suppressor SMA/DO-214AC Pb RoHS COMPLIANCE Features For surface mounted application Low profile package Built-in strain relief Glass passivated junction Excellent clamping capability
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SMA/DO-214AC
a complete circuit diagram of a surge suppressor
marking B12 diode
300W PURE SINE WAVE
diode marking code B12
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PDF
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rectifier diode B12
Abstract: No abstract text available
Text: SMAJ HV SERIES 400 Watts Suface Mount Transient Voltage Suppressor SMA/DO-214AC Pb RoHS COMPLIANCE Features For surface mounted application Low profile package Built-in strain relief Glass passivated junction Excellent clamping capability
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SMA/DO-214AC
rectifier diode B12
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SC-75
Abstract: No abstract text available
Text: New Product SiB900EDK Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21
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SiB900EDK
SC-75
2002/95/EC
SC75-6L-Dual
18-Jul-08
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TRANSISTOR BC 208
Abstract: bu208D bc 301 transistor BF56 MU diode MARKING CODE Bu 208 D transistor Bu 208 TRANSISTOR BC 208 B M2517
Text: 17E D TELEFUNKEN ELECTRONIC m fi^QO^b QDQRMSR • ALGG BU 208 D ■ffmewraiH! electronic Crtativ« TKhnot6g<e9 r-33-c? Silicon NPN Power Transistor A pplications: Horizontal deflection circuits In colour TV-receivers Features: • Monolithic integrated inverse diode
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r-33-c?
TRANSISTOR BC 208
bu208D
bc 301 transistor
BF56
MU diode MARKING CODE
Bu 208 D
transistor Bu 208
TRANSISTOR BC 208 B
M2517
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Untitled
Abstract: No abstract text available
Text: Si5456DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.010 at VGS = 10 V 12 0.0135 at VGS = 4.5 V 12 Qg (Typ.) 9.8 nC PowerPAK ChipFET Single 1 2 D 3 D D G D 7 S 6 S D APPLICATIONS 4 D D 8 • Halogen-free According to IEC 61249-2-21
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Si5456DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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197/197X
S310N
W1P 59 transistor
W1p 48 TRANSISTOR
transistor w1P 83
ICM AP 1703
transistor SMD marked RNW
transistor BD139 PH 71
W1P 66 transistor
transistor w1P 91
Pnp transistor smd ba rn
w1p npn
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Untitled
Abstract: No abstract text available
Text: New Product SiB900EDK Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY 0.225 at VGS = 4.5 V ID (A)a 1.5 0.270 at VGS = 2.5 V 1.5 0.345 at VGS = 1.8 V 1.5 0.960 at VGS = 1.5 V 0.5 VDS (V) RDS(on) (Ω) 20 • Halogen-free According to IEC 61249-2-21
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SiB900EDK
SC-75
2002/95/EC
SC75-6L-Dual
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5456DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.010 at VGS = 10 V 12 0.0135 at VGS = 4.5 V 12 Qg (Typ.) 9.8 nC PowerPAK ChipFET Single 1 2 D 3 D D G D 7 S 6 S D APPLICATIONS 4 D D 8 • Halogen-free According to IEC 61249-2-21
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Si5456DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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si5456
Abstract: No abstract text available
Text: Si5456DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.010 at VGS = 10 V 12 0.0135 at VGS = 4.5 V 12 Qg (Typ.) 9.8 nC PowerPAK ChipFET Single 1 2 D 3 D D G D 7 S 6 S D APPLICATIONS 4 D D 8 • Halogen-free According to IEC 61249-2-21
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Si5456DU
2002/95/EC
Si5456DU-T1-GE3
11-Mar-11
si5456
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiB408DK Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.040 at VGS = 10 V 7a 0.050 at VGS = 4.5 V 7a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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SiB408DK
SC-75
2002/95/EC
SC-75-6L-Single
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiB408DK Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.040 at VGS = 10 V 7a 0.050 at VGS = 4.5 V 7a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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SiB408DK
SC-75
2002/95/EC
SC-75-6L-Single
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5456DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.010 at VGS = 10 V 12 0.0135 at VGS = 4.5 V 12 Qg (Typ.) 9.8 nC PowerPAK ChipFET Single 1 2 D 3 D D G D 7 S 6 S D APPLICATIONS 4 D D 8 • Halogen-free According to IEC 61249-2-21
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Si5456DU
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product SiB408DK Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.040 at VGS = 10 V 7a 0.050 at VGS = 4.5 V 7a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®
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SiB408DK
SC-75
2002/95/EC
SC-75-6L-Single
SiB408DK-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si5456DU Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.010 at VGS = 10 V 12 0.0135 at VGS = 4.5 V 12 Qg (Typ.) 9.8 nC PowerPAK ChipFET Single 1 2 D 3 D D G D 7 S 6 S D APPLICATIONS 4 D D 8 • Halogen-free According to IEC 61249-2-21
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Si5456DU
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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