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    MARKING CODE DT2 TRANSISTOR Search Results

    MARKING CODE DT2 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE DT2 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    t06 marking sot23

    Abstract: BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23
    Text: Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER PACKAGE MARKING CODE PACKAGE 2PA1576Q FtQ SC-70 BC808W 5Ht SOT323 2PA1576R FtR SC-70 BC808-16 5Ep SOT23 2PA1576S FtS SC-70 BC808-16W


    Original     		2PA1576Q SC-70 BC808W OT323 2PA1576R BC808-16 2PA1576S BC808-16W t06 marking sot23 BC857 3ft marking 6Ct SOT23 SOT89 marking cec marking da sot89 MARKING BL SOT89 SOT23 "Marking Code" t04 SOT89 MARKING CODE marking t04 sot23 marking 1G SOT23 PDF

    marking code p07 sot89

    Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
    Text: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING


    OCR Scan     		2PA1576Q 2PA1576R 2PA1576S 2PA17 2PA1774R 2PA1774S 2PB709AQ 2PB709AR 2PB709AS 2PB710AQ marking code p07 sot89 marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F PDF

    marking code dt2 transistor

    Abstract: marking code dt2 sc 1091 marking dt2 dt2 marking code pnp rf transistor PUMD2
    Text: Philips Semiconductors Preliminary specification NPN/PNP resistor-equipped transistors PUMD2 FEATURES • Transistors with different polarity and built-in bias resistors R1 and R2 typ. 22 kil each 6 5 4 1 2 3 R‘fl'H* • No mutual interference between


    OCR Scan     		SC-88 marking code dt2 transistor marking code dt2 sc 1091 marking dt2 dt2 marking code pnp rf transistor PUMD2 PDF

    IR 1838

    Abstract: IRFP250 datasheet B120 HFA06TB120 HFA16TB120 IRFP250
    Text: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing


    Original     		PD-95740 HFA16TB120PbF 260nC HFA16TB120 HFA06TB120 IR 1838 IRFP250 datasheet B120 HFA06TB120 IRFP250 PDF

    a06t

    Abstract: hfa08tb60pbf B120 HFA08TB60 IRFP250
    Text: PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits VF typ. * = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation


    Original     		PD-95737 HFA08TB60PbF HFA08TB60 HFA06T a06t hfa08tb60pbf B120 IRFP250 PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS40490 www.ti.com SLVSCB4 – OCTOBER 2013 5-V to 60-V WIDE-INPUT SYNCHRONOUS PWM BUCK CONTROLLER Check for Samples: TPS40490 FEATURES 1 • • • • • • • Wide-Input Voltage Range from 5 V to 60 V 600-mV Reference Voltage With ±1% Accuracy and External Modulation Capabilities


    Original     		TPS40490 600-mV 100-kHz PDF

    Untitled

    Abstract: No abstract text available
    Text: TPS40490 www.ti.com SLVSCB4 – OCTOBER 2013 5-V to 60-V WIDE-INPUT SYNCHRONOUS PWM BUCK CONTROLLER Check for Samples: TPS40490 FEATURES 1 • • • • • • • Wide-Input Voltage Range from 5 V to 60 V 600-mV Reference Voltage With ±1% Accuracy and External Modulation Capabilities


    Original     		TPS40490 600-mV 100-kHz PDF

    A1 RHD

    Abstract: No abstract text available
    Text: TPS40490 www.ti.com SLVSCB4 – OCTOBER 2013 5-V to 60-V WIDE-INPUT SYNCHRONOUS PWM BUCK CONTROLLER Check for Samples: TPS40490 FEATURES 1 • • • • • • • Wide-Input Voltage Range from 5 V to 60 V 600-mV Reference Voltage With ±1% Accuracy and External Modulation Capabilities


    Original     		TPS40490 600-mV 100-kHz A1 RHD PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing


    Original     		PD-95740 HFA16TB120PbF 260nC HFA16TB120 08-Mar-07 PDF

    a06t

    Abstract: hfa08tb60pbf
    Text: PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits VF typ. * = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation


    Original     		PD-95737 HFA08TB60PbF HFA08TB60 12-Mar-07 a06t hfa08tb60pbf PDF

    MT5C1008DCJ-45/SMD a06t transistor

    Abstract: No abstract text available
    Text: PD-95737 HFA08TB60PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits VF typ. * = 1.4V IF(AV) = 8.0A 4 Qrr (typ.)= 65nC IRRM = 5.0A 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation


    Original     		PD-95737 HFA08TB60PbF HFA08TB60 08-Mar-07 MT5C1008DCJ-45/SMD a06t transistor PDF

    TRANSISTOR SMD MARKING CODE DM

    Abstract: transistor smd code marking tm HFA15TB60S IRFP250 SMD-220 TRANSISTOR SMD MARKING CODE 2x N smd marking dt2
    Text: Bulletin PD-20615 rev. B 11/03 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • 2 VF = 1.7V Qrr * = 84nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation


    Original     		PD-20615 HFA15TB60S HFA15TB60S characterist86) SMD-220 TRANSISTOR SMD MARKING CODE DM transistor smd code marking tm IRFP250 TRANSISTOR SMD MARKING CODE 2x N smd marking dt2 PDF

    IR 1838 T

    Abstract: B120 HFA06TB120 HFA16TB120 IRFP250
    Text: PD-95740 HFA16TB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Benefits 4 IF AV = 16A Qrr (typ.)= 260nC 2 1 • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation • Reduced Snubbing


    Original     		PD-95740 HFA16TB120PbF 260nC HFA16TB120 12-Mar-07 IR 1838 T B120 HFA06TB120 IRFP250 PDF

    B120S

    Abstract: marking dt2 marking code dt2 transistor HFA08TB120S low leakage fast epitaxial diode dt2 marking code
    Text: PD-96034 HFA08TB120SPbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VR = 1200V VF typ. * = 2.4V Base Cathode 2 IF(AV) = 8.0A


    Original     		PD-96034 HFA08TB120SPbF 140nC HFA08TB120S HFA08T B120S B120S marking dt2 marking code dt2 transistor low leakage fast epitaxial diode dt2 marking code PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin PD-20615 rev. B 11/03 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • 2 VF = 1.7V Qrr * = 84nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation


    Original     		PD-20615 HFA15TB60S HFA15TB60S 08-Mar-07 PDF

    HFA15TB60S

    Abstract: IRFP250 SMD-220 MAR 618 transistor
    Text: Bulletin PD-20615 rev. B 11/03 HFA15TB60S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • 2 VF = 1.7V Qrr * = 84nC Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching Transistor • Higher Frequency Operation


    Original     		PD-20615 HFA15TB60S HFA15TB60S 12-Mar-07 IRFP250 SMD-220 MAR 618 transistor PDF

    smd marking dt2

    Abstract: HFA08TB120S SMD-220 b1103 SMD Transistor Marking Code 335
    Text: Bulletin PD-20603 rev. B 11/03 HFA08TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • VR = 1200V VF typ. * = 2.4V Base Cathode Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions 2


    Original     		PD-20603 HFA08TB120S 140nC HFA08TB120S processi86) SMD-220 smd marking dt2 b1103 SMD Transistor Marking Code 335 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95679 HFA06PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free 4 2 1 Benefits VR = 1200V VF typ. * = 2.4V IF(AV) = 6.0A


    Original     		HFA06PB120PbF 116nC O-247AC HFA06PB120 O-247AC O-247 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 95679A HFA06PB120PbF HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free 1 Benefits VR = 1200V BASE CATHODE CATHODE 4 VF typ. * = 2.4V


    Original     		5679A HFA06PB120PbF 116nC HFA06PB120 HFA06PB120PbF O-247AC O-247 PDF

    transistor 200A 24V

    Abstract: No abstract text available
    Text: PD-96034 HFA08TB120SPbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VR = 1200V VF typ. * = 2.4V Base Cathode 2 IF(AV) = 8.0A


    Original     		PD-96034 HFA08TB120SPbF 140nC HFA08TB120S 12-Mar-07 transistor 200A 24V PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-96034 HFA08TB120SPbF HEXFRED Ultrafast, Soft Recovery Diode TM • • • • • • Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Specified at Operating Conditions Lead-Free VR = 1200V VF typ. * = 2.4V Base Cathode 2 IF(AV) = 8.0A


    Original     		PD-96034 HFA08TB120SPbF 140nC HFA08TB120S 08-Mar-07 PDF

    transistor SMD MARKING CODE HF

    Abstract: smd code HF transistor TRANSISTOR SMD MARKING CODE WT AAAA series SMD transistor smd code HF diode TRANSISTOR SMD MARKING CODE X D AAAA transistor smd code marking tm SMD MARKING CODE transistor WW marking code dt2 transistor
    Text: PD-96036 HFA06TB120SPbF. Series HEXFRED Ultrafast, Soft Recovery Diode TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Specified at Operating Conditions • Lead-Free K VR = 1200V BASE + 2 VF(typ.)* = 2.4V IF(AV) = 6.0A


    Original     		PD-96036 HFA06TB120SPbF. 116nC HFA06TB120S O-220 transistor SMD MARKING CODE HF smd code HF transistor TRANSISTOR SMD MARKING CODE WT AAAA series SMD transistor smd code HF diode TRANSISTOR SMD MARKING CODE X D AAAA transistor smd code marking tm SMD MARKING CODE transistor WW marking code dt2 transistor PDF

    smd TRANSISTOR code marking 2F

    Abstract: SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD 9bb IR 1838 T smd marking dt2 TRANSISTOR SMD MARKING CODE kh irm 1838 IR 1838 3v IR 1838 T datasheet IR 1838
    Text: Preliminary Data Sheet PD-20605 rev. A 01/99 HFA16TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits


    Original     		PD-20605 HFA16TB120S 260nC HFA16TB120S smd TRANSISTOR code marking 2F SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD 9bb IR 1838 T smd marking dt2 TRANSISTOR SMD MARKING CODE kh irm 1838 IR 1838 3v IR 1838 T datasheet IR 1838 PDF

    smd TRANSISTOR code marking 2F

    Abstract: SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD MARKING CODE kh TRANSISTOR SMD 9bb smd transistor 2f transistor D207 TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE 207 TRANSISTOR SMD MARKING CODE 2F transistor smd code marking tm
    Text: Preliminary Data Sheet PD-20603 rev. A 01/99 HFA08TB120S HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • K Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits


    Original     		PD-20603 HFA08TB120S 140nC HFA08TB120S smd TRANSISTOR code marking 2F SMD TRANSISTOR MARKING 9bb TRANSISTOR SMD MARKING CODE kh TRANSISTOR SMD 9bb smd transistor 2f transistor D207 TRANSISTOR SMD MARKING CODE 2x TRANSISTOR SMD MARKING CODE 207 TRANSISTOR SMD MARKING CODE 2F transistor smd code marking tm PDF