marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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ax 3003
Abstract: DT0703 DT1351 DT6630-100M-B
Text: Series Number 3003 9th Avenue SW PO Box 50 DT0703 DT1351 Watertown, SD 57201 Toll free: 888-978-2638 Ph: 605-886-3326 Fax: 605-886-8995 Shielded, High Current, Inductors Smart Part Numbers: Series Number - ( Suffix Code )(Tolerance), example DT6630-100M
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DT0703
DT1351
DT6630-100M
DT6630-100M-B
ax 3003
DT0703
DT1351
DT6630-100M-B
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THDT5111
Abstract: No abstract text available
Text: THDT51 THDT65 TRISIL FOR SLIC PROTECTION . . . . FEATURES DUAL ASYMETRICAL TRANSIENT SUPPRESSOR PEAK PULSE CURRENT : IPP = 30 A, 10/1000 µs. HOLDING CURRENT = 150 mA min BREAKDOWN VOLTAGE - THDT51 = 51 V - THDT65 = 65 V. LOW DYNAMIC CHARACTERISTICS AVAILABLE IN SO8 AND DIL8.
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THDT51
THDT65
THDT51
THDT5111
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Untitled
Abstract: No abstract text available
Text: THDT51 THDT65 F Z J SG S-TUO M SO N ^ 7 M , lÄ ß Ä t lJ g T ß M D ß i TRISIL FOR SLIC PROTECTION FEATURES • DUAL ASYMETRICAL TRANSIENT SUPPRESSOR ■ PEAK PULSE CURRENT : Ipp = 30 A, 10/1000 [is. ■ HOLDING CURRENT = 150 mA min ■ BREAKDOWN VOLTAGE
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THDT51
THDT65
-THDT51
THDT5112
THDT6512
DT5112
DT6512
THDT51
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LC1-DT40
Abstract: LC1D80004 LADN10 Schneider LC1DT20 LC1-D65 LADS2 LC1-D38 WIRING LC1-D09 lad-s2 LC1-D80004
Text: References TeSys contactors Component parts for assembling reversing contactors for motor control or low speed - high speed starters For 3-pole motor reversing contactors using 2 identical contactors 810373 Contactors with screw clamp terminals or connectors
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LC1-D09.
LA9-D6569
LA9-D4002
LA9-D8069
LA9-D8002
LA9-D92
LA9-D93
LC1-DT40
LC1D80004
LADN10
Schneider LC1DT20
LC1-D65
LADS2
LC1-D38
WIRING LC1-D09
lad-s2
LC1-D80004
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Marking Code TI OMAP
Abstract: No abstract text available
Text: TPD2E2U06 www.ti.com SLLSEG9 – JUNE 2013 Dual-Channel High-Speed ESD Protection Device Check for Samples: TPD2E2U06 FEATURES DESCRIPTION • The TPD2E2U06 is a dual-channel ultra-low capacitance ESD-protection device. The device offers ±25-KV IEC contact and ±30-KV IEC air-gap ESD
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TPD2E2U06
TPD2E2U06
25-KV
30-KV
Marking Code TI OMAP
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RE8RB31BU
Abstract: LC1D40A RE8TA41BU A9F74 b40 B2 RECTIFIER 400V LC1DT60A LC1-D50A LC1D40008 XUX0ARCTT16T LR2K
Text: global specialist in energy management The architects of efficiency Singapore Mongolia Price List Catalogue 2013 Electrical Distribution, Automation & Control ! % 3% %3 3 '3 3 , 3 3% %3 ( +3 &-=33 &2/=
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197903476G)
MN-EC1113
SG-PL0413
RE8RB31BU
LC1D40A
RE8TA41BU
A9F74
b40 B2 RECTIFIER 400V
LC1DT60A
LC1-D50A
LC1D40008
XUX0ARCTT16T
LR2K
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Untitled
Abstract: No abstract text available
Text: <p Preliminary Datasheet FUJITSU S e p te m b e r 1996 V ersion 0.8 MB86681 ATM Switch Element SRE-L FM L/NPD/SRE-L/DS/1223 The FUJITSU MB86681 is a Self-Routing switch Element (SRE-L) for use in ATM switch fabrics. It is ideally suited to applications in a variety of customer premises equipment such
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MB86681
L/NPD/SRE-L/DS/1223
MB86681
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Untitled
Abstract: No abstract text available
Text: TPD2E2U06 www.ti.com SLLSEG9A – JUNE 2013 – REVISED JUNE 2013 Dual-Channel High-Speed ESD Protection Device Check for Samples: TPD2E2U06 FEATURES DESCRIPTION • The TPD2E2U06 is a dual-channel ultra-low capacitance ESD-protection device. The device offers
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TPD2E2U06
TPD2E2U06
25-KV
30-KV
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Untitled
Abstract: No abstract text available
Text: TPD2E2U06 www.ti.com SLLSEG9A – JUNE 2013 – REVISED JUNE 2013 Dual-Channel High-Speed ESD Protection Device Check for Samples: TPD2E2U06 FEATURES DESCRIPTION • The TPD2E2U06 is a dual-channel ultra-low capacitance ESD-protection device. The device offers
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TPD2E2U06
TPD2E2U06
25-KV
30-KV
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Untitled
Abstract: No abstract text available
Text: TPD2E2U06 www.ti.com SLLSEG9A – JUNE 2013 – REVISED JUNE 2013 Dual-Channel High-Speed ESD Protection Device Check for Samples: TPD2E2U06 FEATURES DESCRIPTION • The TPD2E2U06 is a dual-channel ultra-low capacitance ESD-protection device. The device offers
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TPD2E2U06
TPD2E2U06
25-KV
30-KV
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c009 marking
Abstract: No abstract text available
Text: TPD2E2U06 www.ti.com SLLSEG9A – JUNE 2013 – REVISED JUNE 2013 Dual-Channel High-Speed ESD Protection Device Check for Samples: TPD2E2U06 FEATURES DESCRIPTION • The TPD2E2U06 is a dual-channel ultra-low capacitance ESD-protection device. The device offers
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TPD2E2U06
TPD2E2U06
25-KV
30-KV
c009 marking
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DT651D
Abstract: I3124 marking code sgs sgs Thomson Thyristor THBT200S THDT6511D 210us
Text: THDT6511D Application Specific Discretes A.S.D. TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION PRELIMINARY DATASHEET FEATURES DUALASYMETRICALTRANSIENTSUPPRESSOR PEAK PULSE CURRENT : IPP = 40A, 10/100µs HOLDING CURRENT : 150 mA min. BREAKDOWN VOLTAGE : 65 V min.
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THDT6511D
DT651D
I3124
marking code sgs
sgs Thomson Thyristor
THBT200S
THDT6511D
210us
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TO 48 ASYMMETRICAL THYRISTOR
Abstract: ptc resistor 300 to 500 e I3124 THBT200S THDT6511D
Text: THDT6511D Application Specific Discretes TRANSIENT A.S.D. VOLTAGE SUPPRESSOR FOR SLIC PROTECTION FEATURES • ■ ■ ■ ■ ■ DUALASYMETRICALTRANSIENT SUPPRESSOR PEAK PULSE CURRENT : IPP = 40A, 10/100µs HOLDING CURRENT : 150 mA min. BREAKDOWN VOLTAGE : 65 V min.
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THDT6511D
TO 48 ASYMMETRICAL THYRISTOR
ptc resistor 300 to 500 e
I3124
THBT200S
THDT6511D
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I3124
Abstract: THBT200S THDT6511D
Text: THDT6511D Application Specific Discretes TRANSIENT A.S.D. VOLTAGE SUPPRESSOR FOR SLIC PROTECTION FEATURES • ■ ■ ■ ■ ■ DUAL ASYMETRICAL TRANSIENT SUPPRESSOR PEAK PULSE CURRENT : IPP = 40A, 10/100µs HOLDING CURRENT : 150 mA min. BREAKDOWN VOLTAGE : 65 V min.
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THDT6511D
I3124
THBT200S
THDT6511D
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DT651D
Abstract: No abstract text available
Text: SGS-THOMSON THDT6511D ;y Application Specific Discretes A.S.D. TRANSIENT VO LTAG E SUPPRESSO R FOR SLIC PROTECTION PRELIMINARY DATASHEET FEATURES • ■ ■ ■ ■ DUAL ASYMETRICALTRANSIENT SUPPRESSOR PEAK PULSE CURRENT : Ipp = 40A, 10/100ns HOLDING C U R R EN T: 150m A m in.
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THDT6511D
10/100ns
DT651D
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diode MARKING CODE sg
Abstract: No abstract text available
Text: 7/ SGS-THOMSON ILI Application Specific Discretes A.S.D. T H D T 6 5 1 1 D TRANSIENT VO LTAG E SUPPRESSO R FOR SLIC PROTECTION PRELIMINARY DATASHEET FEATURES • ■ ■ ■ ■ ■ DUAL ASYMETRICAL TRANSIENTSUPPRESSOR PEAK PULSE CURRENT : Ipp = 40A, 10/100|is
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301 marking code PNP transistor
Abstract: BP317 marking code Dt6
Text: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage MBD128 PUMD6 NPN/PNP resistor-equipped transistor Product specification Supersedes data of 1997 Dec 15 1999 May 28 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistor PUMD6 FEATURES
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MBD128
115002/02/pp8
301 marking code PNP transistor
BP317
marking code Dt6
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ptc resistor 300 to 500 e
Abstract: DT651D I3124 THBT200S THDT6511D
Text: THDT6511D Application Specific Discretes TRANSIENT A.S.D. VOLTAGE SUPPRESSOR FOR SLIC PROTECTION FEATURES • ■ ■ ■ ■ ■ DUAL ASYMETRICAL TRANSIENT SUPPRESSOR PEAK PULSE CURRENT : IPP = 40A, 10/100µs HOLDING CURRENT : 150 mA min. BREAKDOWN VOLTAGE : 65 V min.
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THDT6511D
ptc resistor 300 to 500 e
DT651D
I3124
THBT200S
THDT6511D
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Untitled
Abstract: No abstract text available
Text: TWL1103TĆQ1 VOICEĆBAND AUDIO PROCESSOR VBAP SGLS120B − APRIL 2002 − REVISED APRIL 2008 D D D D D MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (CL = 200 pF, RL = 0) 2.7-V Operation Two Differential Microphone Inputs, One Differential Earphone Output, and One
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TWL1103TQ1
SGLS120B
MIL-STD-883,
15-Bit
32-Pin
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Untitled
Abstract: No abstract text available
Text: TLV320AIC1110 SLAS359 – DECEMBER 2001 PCM CODEC D Capable of Driving 32 Ω Down to a 8-Ω FEATURES D 2.7-V to 3.3-V Operation D Designed for Analog and Digital Wireless D D D D D D D D D D Speaker Handsets and Telecommunications Applications Two Differential Microphone Inputs
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TLV320AIC1110
SLAS359
15-Bit
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