2N60 transistor
Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor
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MOS200403
H02N60
O-252
200oC
183oC
217oC
260oC
245oC
H02N60I,
2N60 transistor
all transistor 2N60
transistor 2n60
02N60
2N60
MOSFET MARK y2
y1 marking code transistor
2n60 application
2n60 MOSFEt
marking code diode 648
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MOSFET MARK y2
Abstract: y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749
Text: HI-SINCERITY Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 MICROELECTRONICS CORP. H02N60S Series H02N60S Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab
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MOS200504
H02N60S
O-252
200oC
183oC
217oC
260oC
245oC
H02N60SI,
MOSFET MARK y2
y1 marking code transistor
marking code diode 648
PB40 bridge
mosfet k 61 y1
mosfet sn60
transistor mark code H1
diode marking code a2 y2
2N60S
marking code 749
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02n60
Abstract: all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60 H02N60E
Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/7 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor
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Original
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MOS200403
H02N60
O-252
200oC
183oC
217oC
260oC
245oC
H02N60I,
02n60
all transistor 2N60
2N60
2N60 transistor
PB40 bridge
2n60 application
MOSFET MARK H1
TL 434
H02N60E
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H02N65
Abstract: H02N60E H02N60F h02n
Text: HI-SINCERITY Spec. No. : MOS200910 Issued Date : 2009.04.07 Revised Date : Page No. : 1/6 MICROELECTRONICS CORP. H02N65 Series H02N65 Series Pin Assignment Tab 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source N-Channel Power Field Effect Transistor
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MOS200910
H02N65
O-220AB
183oC
217oC
260oC
245oC
10sec
H02N60E
H02N60F
h02n
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AJSM
Abstract: No abstract text available
Text: 1. DRAWING NO. THIRD ANGLE PROJ. MATERIALS AND FINISHES: <§> BODY - BRASS ASTM-B16 H02, C36000 , GOLD PLATING CONTACT PIN - PHOSPHOR BRONZE, GOLD PLATING INSULATOR - PTFE PER ASTM D 1710 OR EQUIV. 2. DESCRIPTION A B RELEASE TO MFG. CORRECTED TITLE BLOCK
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ASTM-B16
C36000)
\DEPT611
AJSM
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marking code H02
Abstract: No abstract text available
Text: APH-SMAP-SMBJ NOTES: 1. DRAWING NO. THIRD ANGLE PROJ. MATERIALS AND FINISHES: <§> BODY - BRASS ASTM-B16 H02, C36000 , GOLD PLATING CONTACT PIN - BRASS, GOLD PLATING INSULATOR - PTFE PER ASTM D 1710 OR EQUIV. 2. A B DATE 9/12/06 5/25/11 RELEASE TO MFG. CORRECTED TITLE BLOCK
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ASTM-B16
C36000)
\DEPT611
marking code H02
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PDF
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Untitled
Abstract: No abstract text available
Text: A P H - N J -T N C J NOTES: 1. DRAWING NO. THIRD ANGLE PROJ. MATERIALS AND FINISHES: R E V IS IO N S {§> ^ REV DESCRIPTION A B R E L E A S E TO MFG. C O R R E C T E D TITLE BLO CK DATE 9 /1 2 /0 6 5 /2 5 /1 1 ECO 46262 48598 APPR CPM/ CPM/ BODY - BRASS ASTM-B16 H02, C36000 , NICKEL PLATING
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ASTM-B16
C36000)
--24UNEF--2A
--28UNEF--2A
\DEPT611
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DTC323TK
Abstract: No abstract text available
Text: DTC323TK Digital transistor, NPN, with 1 resistor Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • • package marking: DTC323TK; H02 in addition to standard features of digital transistor, this transistor has: — low collector saturation voltage,
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DTC323TK
SC-59)
DTC323TK;
DTC323TK
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amphenol 74868 ug
Abstract: amphenol 31 74868 ug marking code H02
Text: R E V 1S I O N S 31-6101 NOTES: DRAWING MATERIALS AND BODY CONTACT INSULATOR 2. FINISHES: TH - B R A S S A S T M - B - B R A S S (A S T M - B - PTFE PER A S T M I6 16 D H02, C 3 6 0 0 0 , N I C K E L P L A T I N G ( . 0 0 0 0 8 T H I C K H02, C 3 6 0 0 0 ) , G O L D P L A T I N G ( . 0 0 0 0 3
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C36000)
0805yone
X-406
\TNC\31
amphenol 74868 ug
amphenol 31
74868 ug
marking code H02
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1303c
Abstract: 31611 448-61
Text: NOTES: 1 . MA T E R I A L S OF CONSTRUCTION: BODY, R E T A I N E R R ING, S H E L L , TOP HAT 4 HEX NUT = BRASS A S T M - B 1 6 H02, C 3 6 0 0 0 , NIC K EL PLATED INSULATORS ( 2 ) = PTFE PER ASTM D 1710 OR EOUIV FEMALE CONTACT - B ER Y L L IU M COPPER ( Q Q - C - 5 3 0 ) , GOLD PLATE ( . 0 0 0 0 3 0 MIN T H I C K )
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nec b1007
Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,
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NE68018
NE680
UPA801TC
UPA808TC
UPA821TC
UPA826TC
UPA861TD
UPA831TC
UPA862TD
UPA835TC
nec b1007
T79 code marking
C3206
marking s16
marking code C1H
qfn marking t88
C3H marking
NE02107
T79 marking
C3206G
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jd 1803
Abstract: otc114 E2p 93 transistor 2SD1834 B14A DTC143YKA DTC143ZKA transistor marking w9 2SA1690 UMW10
Text: The Class and Basic Ordering Units for Standard and Semi-standard Products T o m a k e it e a sier for th e cu sto m er to s e le c t th e ty p e o f product b est suited to specific applications, we offer transistors in three types. : an d 1 sta n d a rd ,
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2SA1774
2SA1821
2SA1885
2SC4617
2SC4618
2SC4619
2SC4649
2SC4725
2SC4726
2SC4997
jd 1803
otc114
E2p 93 transistor
2SD1834
B14A
DTC143YKA
DTC143ZKA
transistor marking w9
2SA1690
UMW10
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marking code H02
Abstract: No abstract text available
Text: DTC323TU / DTC323TK / DTC323TS DTC343TK / DTC343TS Transistors IDigital transistors built-in resistors DTC323TU / DTC323TK / DTC323TS •A b s o lu te maximum ratings ( T a = 2 5 t ) •Features In addition to the features of regular digital transistors,
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DTC323TU
DTC323TK
DTC323TS
DTC343TK
DTC343TS
DTC323TS
marking code H02
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CDR03 receiver
Abstract: varistor 250v 592 PH 105k 250v ceramic disc Piezoelectric crystal 1mhz ultrasonic FUSE T2A 250v Motorola transistor smd marking codes smps 10w 5V 230 AC to 5V dc smps capacitor type 104z 50v SR 0805 X7R capacitor
Text: MLC Capacitors Tantalum Capacitors Microwave Capacitors Thin Film Capacitors Glass Capacitors Chip Resistors Networks EMI Filters Bulk Filters Saw Filters Dielectric Filters Resonators Oscillators Thin Film Inductors Thin Film Fuses Voltage Suppressors Acoustical Piezos
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S-SF30M298-C
CDR03 receiver
varistor 250v 592 PH
105k 250v ceramic
disc Piezoelectric crystal 1mhz ultrasonic
FUSE T2A 250v
Motorola transistor smd marking codes
smps 10w 5V
230 AC to 5V dc smps
capacitor type 104z 50v
SR 0805 X7R capacitor
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iso 1043-1
Abstract: DIN 6120 sae j1344 j1344 w28c iso 1043-1 polypropylene bga Shipping Trays MEC34 BGA OUTLINE DRAWING TSOP package tray
Text: Packing Considerations Methods, Materials and Recycling Transport Media All NSC commercial devices are prepared, inspected and packed to insure proper physical support and protection during handling, transportation and shipment. Assembled devices are packed in one or more of the following container
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MS011809-4
MS011809-1
MS011809-5
MS011809-2
MS011809-6
MS011809-3
MS011809-7
MS011809
iso 1043-1
DIN 6120
sae j1344
j1344
w28c
iso 1043-1 polypropylene
bga Shipping Trays
MEC34
BGA OUTLINE DRAWING
TSOP package tray
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 H REVISIONS DIST - P H J NOTES: J1 1 DRAWING REPRESENTS PART VERSION "A3". 2 PLATING: 3,70 0,05 1,2µm MIN. NICKEL ALL OVER COPLANARITY OF SOLDER SURFACES 0,08 MAX. 4 DIMENSION DEPENDS ON DISTANCE BETWEEN R0,30 REF PWB AND BATTERY, SEE TABLE ON SHEET 4.
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09SEP2010
29MAR2012
ECR-13-013007
9OCT2013
ECR-12-004130
ECR-10-018708
330x101x24
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F873FN254M760
Abstract: GE Capacitor 23C
Text: EMI Suppressors Metallized Polypropylene F873 EMI Capacitors Class X1, 760VAC Construction Metallized polypropylene film encapsulated with selfextinguishing resin in a box of material recognized to UL 94 V–0. Benefits • • • • • • • • •
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760VAC
50/60Hz
across-the-l-1279-757201
F3004-1
F873FN254M760
GE Capacitor 23C
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F873FN254M760
Abstract: F873DH473M760 F873DH473M7602 F873RU185M760 F873RP824M760 F873DB123 F873FO254 F873DB103 F873DP104M760 KEC DATE code
Text: EMI Suppressors Metallized Polypropylene F873 EMI Capacitors Class X1, 760VAC Construction Metallized polypropylene film encapsulated with self-extinguishing resin in a box of material recognized to UL 94 V–0. Benefits • • • • • • • • •
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760VAC
50/60Hz
F873FN254M760
F873DH473M760
F873DH473M7602
F873RU185M760
F873RP824M760
F873DB123
F873FO254
F873DB103
F873DP104M760
KEC DATE code
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Untitled
Abstract: No abstract text available
Text: EMI Suppressors Metallized Polypropylene F873 EMI Capacitors Class X1, 760VAC Construction Metallized polypropylene film encapsulated with self-extinguishing resin in a box of material recognized to UL 94 V–0. Benefits • • • • • • • • •
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760VAC
50/60Hz
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Integrated Circuit LBSS138V3.3T1G N-Channel/PN Duals • We declare that the material of product compliance with RoHS requirements. MAXIMUM RATING Symbol Value Unit VDSS 50 Vdc Gate–to–Source Voltage – Continuous VGS ± 20
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LBSS138V3
SC-74
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LBSS138
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. LBSS138V3.3T1G S-LBSS138V3.3T1G Dual Integrated Circuit N-Channel/PN Duals • We declare that the material of product compliance with RoHS requirements. • S- Prefix for Automotive and Other Applications Requiring Unique Site and
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LBSS138V3
S-LBSS138V3
AEC-Q101
LBSS138
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marking code H02
Abstract: No abstract text available
Text: THIS 15 ISSUED tN STRICT CONFIDENCE ON CONDITION THAT IT IS NOT USED AS A BASIS FOR MANUFACTURE OR SALE, AND THAT IT 5 NOV COPIED, REPRINTED OR DISCLOSED TO A THIRD PARTY WHOLLY OR IN PART WITHOUT THE PftlOR WRITTEN CONSENT OF ITT POMONA. Ph: (909 469-2900
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LGA 1156 PIN OUT diagram
Abstract: QFP11T144-002 LGA 1156 Socket diagram 216-LQFP Wells-CTI 36 lead Flat Pack smd AAAS Wells-CTI LCC socket Wells-CTI 880 020 BGA136 Enplas drawings
Text: Preface Thank you for your continuing loyalty to Fujitsu's semiconductor products. Electronic equipment is continually becoming smaller, lighter, and less expensive while also growing more advanced in terms of function and performance. As a result, applications for semiconductor devices such as IC and
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F881
Abstract: No abstract text available
Text: EMI Suppressors Metallized Polypropylene F881 EMI Capacitors Class Y2, 300VAC Construction Metallized polypropylene film encapsulated with self-extinguishing resin in a box of material recognized to UL 94 V–0. Benefits • • • • • • • • •
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300VAC
50/60Hz
2500VAC
F881
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