Untitled
Abstract: No abstract text available
Text: S O T- 2 3 B I P O L A R T R A N S I S T O R S NPN TRANSISTORS • New Product Marking VCEO hFE @VCE/IC VCEsat @IC/IB ICES @VCE Type Code V V/mA max.V mA/mA max.nA V BC817-16 6A 45 100-250 1/100 0.7 500/50 100 45 BC817-25 6B 45 160-400 1/100 0.7 500/50 100
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BC817-16
BC817-25
BC817-40
BC818-16
BC818-25
BC818-40
BC846A
BC846B
BC847A
BC847B
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Untitled
Abstract: No abstract text available
Text: 2DD2098R LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 75mΩ at 4A Complementary PNP Type Available (2DB1386) Ideally Suited for Automated Assembly Processes
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2DD2098R
2DB1386)
OT89-3L
J-STD-020D
DS31299
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PDF
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SOT89 MARKING CODE
Abstract: J-STD-020D rce marking 4A SOT89 MARKING CODE
Text: 2DD2098R LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW EW PRO P RODUC D UCT T Features • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 75mΩ at 4A
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Original
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2DD2098R
2DB1386)
OT89-3L
J-STD-020D
DS31299
SOT89 MARKING CODE
J-STD-020D
rce marking
4A SOT89 MARKING CODE
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PDF
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rce marking
Abstract: 2dd2098r 4A SOT89 MARKING CODE
Text: 2DD2098R LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW EW PRO P RODUC D UCT T Features • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 75mΩ at 4A
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Original
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2DD2098R
2DB1386)
OT89-3L
OT89-3L
J-STD-020D
DS31299
621-2DD2098R-13
2DD2098R-13
rce marking
2dd2098r
4A SOT89 MARKING CODE
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PDF
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n412
Abstract: A1 marking code J-STD-020D DPLS31
Text: DNLS412E LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Please click here to visit our online spice models database. NEW EW PR P R ODUC ODUCT T Features • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 57.5mΩ at 4A
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Original
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DNLS412E
DPLS315E)
OT-223
DS31324
n412
A1 marking code
J-STD-020D
DPLS31
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PDF
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Untitled
Abstract: No abstract text available
Text: DNLS412E LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 57.5mΩ at 4A High DC Current Gain hFE > 400 at IC = 3A Complementary PNP Type Available (DPLS315E)
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DNLS412E
DPLS315E)
OT-223
DS31324
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PDF
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Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGN USE FZT688B DNLS412E LOW VCE SAT NPN SURFACE MOUNT TRANSISTOR Features • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 57.5m at 4A High DC Current Gain hFE > 400 at IC = 3A
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FZT688B
DNLS412E
DPLS315E)
OT-223
DS31324
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PDF
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Untitled
Abstract: No abstract text available
Text: TS13005 High Voltage NPN Transistor TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE SAT Features 4A 1V @ IC=4A, IB=1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type
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TS13005
O-220
ITO-220
TS13005CZ
50pcs
TS13005CI
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power transistor Ic 4A NPN to - 251
Abstract: HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NPN Transistor 450v 1A transistor a13
Text: TSC5804D High Voltage Fast-Switching NPN Power Transistor TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 1050V IC VCE(SAT) Features 4A 0.5V @ IC=1A, IB=0.2A Block Diagram ● High Voltage Capability
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TSC5804D
O-251
O-252
TSC5804DCH
TSC5804DCP
O-251
75pcs
power transistor Ic 4A NPN to - 251
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
NPN Transistor 450v 1A
transistor a13
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PDF
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TSC5304EDCP
Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304ED
O-251
O-252
TSC5304EDCP
TSC5304EDCH
O-252
75pcs
marking E11 DIODE
power transistor Ic 4A NPN to - 251
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PDF
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NPN Transistor 1A 400V
Abstract: transistor 926 npn transistors 400V 1A transistor j 127 ITO-220 TS13005 TS13005CI TS13005CZ transistor marking 2a transistor ts13005
Text: TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 4A 1V @ IC / IB = 4A / 1A Block Diagram ● High Voltage ● High Speed Switching Structure ● Silicon Triple Diffused Type
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Original
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TS13005
O-220
ITO-220
TS13005CZ
50pcs
TS13005CI
NPN Transistor 1A 400V
transistor 926
npn transistors 400V 1A
transistor j 127
ITO-220
TS13005
transistor marking 2a
transistor ts13005
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PDF
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Untitled
Abstract: No abstract text available
Text: TSC236 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 4A 1.3V @ IC / IB = 2.5A / 0.6A Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type
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Original
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TSC236
O-220
ITO-220
TSC236CZ
50pcs
TSC236CI
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PDF
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Untitled
Abstract: No abstract text available
Text: TS13005 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 4A 1V @ IC / IB = 4A / 1A Block Diagram High Voltage High Speed Switching Structure Silicon Triple Diffused Type
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Original
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TS13005
O-220
ITO-220
TS13005CZ
50pcs
TS13005CI
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PDF
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TRANSISTOR K 1507
Abstract: 1348 transistor Transistor 1507 Transistor 1308 marking code 0632 tp 220 n
Text: TSC236 High Voltage NPN Transistor TO-220 ITO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE SAT Features 4A 1.3V @ IC / IB = 2.5A / 0.6A Block Diagram ● High Voltage ● High Speed Switching Structure ●
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TSC236
O-220
ITO-220
TSC236CZ
TSC236CI
50pcs
TRANSISTOR K 1507
1348 transistor
Transistor 1507
Transistor 1308
marking code 0632
tp 220 n
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated Green APT13005 450V NPN HIGH VOLTAGE POWER TRANSISTOR Features Mechanical Data • BVCEO > 450V BVCES > 700V BVEBO > 9V IC = 4A high Collector Current Lead-Free Finish; RoHS Compliant Notes 1 & 2
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APT13005
O220F-3,
O220AB
MIL-STD-202,
O220F-3:
1500mg
2000mg
DS36308
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PDF
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TP 1078
Abstract: transistor 926
Text: TSC128D High Voltage NPN Transistor with Diode TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter TO-263 2 D PAK PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC128D
O-220
O-263
TSC128DCZ
TSC128DCM
O-263
50pcs
800pcs
TP 1078
transistor 926
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5210 diode
Abstract: NPN Silicon Power Transistor DPAK npn transistors 400V low power TSC5304D TSC5304DCH TSC5304DCP C5 MARKING TRANSISTOR L 0814 CW68
Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 2.5A / 0.5A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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Original
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TSC5304D
O-251
O-252
5210 diode
NPN Silicon Power Transistor DPAK
npn transistors 400V low power
TSC5304D
TSC5304DCH
TSC5304DCP
C5 MARKING TRANSISTOR
L 0814
CW68
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PDF
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TSC5304D
Abstract: TSC5304DCH TSC5304DCP power transistor Ic 4A NPN to - 251
Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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Original
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TSC5304D
O-251
O-252
TSC5304D
TSC5304DCH
TSC5304DCP
power transistor Ic 4A NPN to - 251
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PDF
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marking c08
Abstract: C08 marking 250V transistor npn 2a BM 0228 marking code C5 power transistor Ic 4A NPN to - 251 1A MARKING CODE C5 MARKING TRANSISTOR marking code B2 NPN Silicon Power Transistor DPAK
Text: TSC5304D High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 1.5V @ IC / IB = 4A / 1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304D
O-251
O-252
marking c08
C08 marking
250V transistor npn 2a
BM 0228
marking code C5
power transistor Ic 4A NPN to - 251
1A MARKING CODE
C5 MARKING TRANSISTOR
marking code B2
NPN Silicon Power Transistor DPAK
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PDF
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TSC5304ED
Abstract: power transistor Ic 4A NPN to - 251 TSC5304EDCP transistor c10 TO-252 marking C10 marking C10
Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCEO 400V BVCBO 700V IC 4A VCE(SAT) Features ● 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304ED
O-251
O-252
TSC5304ED
power transistor Ic 4A NPN to - 251
TSC5304EDCP
transistor c10
TO-252 marking C10
marking C10
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PDF
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Untitled
Abstract: No abstract text available
Text: DSS20200L 20V PNP LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • BVCEO > -20V • • IC = -2A Continuous Collector Current • • ICM = -4A Peak Pulse Current Case: SOT23 Case Material: molded plastic, “Green” molding compound UL Flammability Classification Rating 94V-0
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DSS20200L
-120mV
DSS20201L
AEC-Q101
J-STD-020
DS31604
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PDF
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y1 marking code transistor
Abstract: HSB1386I transistor mark code H1
Text: HI-SINCERITY Spec. No. : HI200201 Issued Date : 2002.02.01 Revised Date : 2005.07.13 Page No. : 1/4 MICROELECTRONICS CORP. HSB1386I LOW FREQUENCY TRANSISTOR -20V, -4A Features • Low VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) • Excellent DC current gain characteristics.
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HI200201
HSB1386I
O-251
183oC
217oC
260oC
y1 marking code transistor
HSB1386I
transistor mark code H1
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PDF
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TL 434
Abstract: y1 marking code transistor HSB1386J
Text: HI-SINCERITY Spec. No. : HJ200301 Issued Date : 2001.11.30 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HSB1386J LOW FREQUENCY TRANSISTOR -20V, -4A Features • Low VCE(sat). VCE(sat)=-0.55V(Typ.) (IC/IB=-4A/-0.1A) • Excellent DC current gain characteristics.
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HJ200301
HSB1386J
O-252
183oC
217oC
260oC
TL 434
y1 marking code transistor
HSB1386J
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PDF
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2DD2098
Abstract: KP3Q 4A SOT89 MARKING CODE
Text: 2DB1386Q/R 20V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -20V IC = -5A high Continuous Current Low saturation voltage VCE sat < -1V @ -4A Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0
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Original
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2DB1386Q/R
2DD2098
AEC-Q101
J-STD-020
MIL-STD-202,
DS31147
KP3Q
4A SOT89 MARKING CODE
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PDF
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