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    MARKING CODE IP3 Search Results

    MARKING CODE IP3 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC4511BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Visit Toshiba Electronic Devices & Storage Corporation
    74LVCH16501APF8 Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APA Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APA8 Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APV Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation

    MARKING CODE IP3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RF NPN POWER TRANSISTOR 2.5 GHZ

    Abstract: Q62702-F1575 marking 17 sot343
    Text: BFP 136W NPN Silicon RF Transistor • For power amplifier in DECT and PCN systems • fT = 5.5GHz • Gold metalization for high reliability ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    Original     		OT-343 Q62702-F1575 900MHz Jan-20-1997 RF NPN POWER TRANSISTOR 2.5 GHZ Q62702-F1575 marking 17 sot343 PDF

    Transistor BFT 93

    Abstract: Transistor BFT 10 Q62702-F1063 MARKING 93 40mAIC BFT93
    Text: BFT 93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package


    Original     		OT-23 Q62702-F1063 Dec-12-1996 Transistor BFT 93 Transistor BFT 10 Q62702-F1063 MARKING 93 40mAIC BFT93 PDF

    Transistor BFT 92W

    Abstract: 30227 Transistor BFT 10 transistor BFt 65 Q62702-F1681
    Text: BFT 92W PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92W NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    Original     		OT-323 Q62702-F1681 900MHz Dec-11-1996 Transistor BFT 92W 30227 Transistor BFT 10 transistor BFt 65 Q62702-F1681 PDF

    30227

    Abstract: Transistor BFT 10 Q62702-F1062 w1s sot23
    Text: BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    Original     		OT-23 Q62702-F1062 900MHz Dec-13-1996 30227 Transistor BFT 10 Q62702-F1062 w1s sot23 PDF

    Q62702-F1396

    Abstract: BF 182 transistor
    Text: BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-143 Q62702-F1396 Dec-12-1996 Q62702-F1396 BF 182 transistor PDF

    IC 2272

    Abstract: Q62702-F1601 GMA marking
    Text: BFP 182R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-143R Q62702-F1601 Jan-21-1997 IC 2272 Q62702-F1601 GMA marking PDF

    MJE 340 transistor

    Abstract: Q62702-F1501
    Text: BFP 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-343 Q62702-F1501 Aug-30-1996 MJE 340 transistor Q62702-F1501 PDF

    Q62702-F1491

    Abstract: GMA marking 175fF
    Text: BFR 181W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-323 Q62702-F1491 Dec-11-1996 Q62702-F1491 GMA marking 175fF PDF

    Q62702-F1271

    Abstract: No abstract text available
    Text: BFP 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-143 Q62702-F1271 Dec-11-1996 Q62702-F1271 PDF

    BFR 182 transistor

    Abstract: Transistor BFR 900mhz BF 182 transistor Transistor BFR 93 F131 Q62702-F1315
    Text: BFR 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-23 Q62702-F1315 Sep-04-1996 BFR 182 transistor Transistor BFR 900mhz BF 182 transistor Transistor BFR 93 F131 Q62702-F1315 PDF

    transistor marking R2s

    Abstract: Q62702-F1489
    Text: BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    Original     		OT-323 Q62702-F1489 900MHz Dec-11-1996 transistor marking R2s Q62702-F1489 PDF

    NR SOT-143

    Abstract: ta 8742 IC Q62702-F1282
    Text: BFP 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-143 Q62702-F1282 Dec-13-1996 NR SOT-143 ta 8742 IC Q62702-F1282 PDF

    marking 93A

    Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ Q62702-F1144
    Text: BFP 93A NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


    Original     		OT-143 Q62702-F1144 900MHz Dec-16-1996 marking 93A RF NPN POWER TRANSISTOR 2.5 GHZ Q62702-F1144 PDF

    Transistor BFR 90

    Abstract: F1510 Q62702-F1510 Transistor BFR 900mhz 193W
    Text: BFR 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-323 Q62702-F1510 Dec-11-1996 Transistor BFR 90 F1510 Q62702-F1510 Transistor BFR 900mhz 193W PDF

    Q62702-F1577

    Abstract: 193W
    Text: BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-343 Q62702-F1577 Dec-12-1996 Q62702-F1577 193W PDF

    Q62702-F1314

    Abstract: No abstract text available
    Text: BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-23 Q62702-F1314 Dec-11-1996 Q62702-F1314 PDF

    Transistor BFR 38

    Abstract: Q62702-F1218 marking code ne sot 23 K 193 transistor
    Text: BFR 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-23 Q62702-F1218 Dec-11-1996 Transistor BFR 38 Q62702-F1218 marking code ne sot 23 K 193 transistor PDF

    BFP 181R

    Abstract: IC 7449 Q62702-F1685 SIEMENS marking
    Text: BFP 181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • fT = 8GHz F = 1.45dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-143R Q62702-F1685 Jan-21-1997 BFP 181R IC 7449 Q62702-F1685 SIEMENS marking PDF

    BFG194

    Abstract: Q62702-F1321 BFG 38
    Text: BFG 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		OT-223 BFG194 Q62702-F1321 Aug-22-1996 Q62702-F1321 BFG 38 PDF

    marking 93A

    Abstract: Q62702-F1086 marking code R2S sot23 BFR93A marking R2s GMA marking Transistor BFR 900mhz
    Text: BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		OT-23 Q62702-F1086 900MHz Dec-12-1996 marking 93A Q62702-F1086 marking code R2S sot23 BFR93A marking R2s GMA marking Transistor BFR 900mhz PDF

    IC 2272

    Abstract: Q62702-F1502
    Text: BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		900MHz OT-343 Q62702-F1502 Dec-12-1996 IC 2272 Q62702-F1502 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon RF Transistor • BFQ 69 For low-noise broadband amplifiers in antenna and telecommunications systems at collector currents from 1 mA to 25 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan     		Q62702-F780 fl235fc BFQ69 DDb71D3 PDF

    BFq69

    Abstract: BFQ 58 ts102
    Text: SIEMENS NPN Silicon RF Transistor BFQ 69 • For low-noise broadband amplifiers in antenna and telecommunications systems at collector currents from 1 mA to 25 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code


    OCR Scan     		Q62702-F780 BFQ69 EHT07562 EHT07561 EHTQ7564 BFq69 BFQ 58 ts102 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fr = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		900MHz Q62702-F1492 OT-323 IS211 PDF