Untitled
Abstract: No abstract text available
Text: STWD100 Watchdog timer circuit Datasheet - production data Applications • Telecommunications Alarm systems Industrial equipment Networking SOT23-5 WY Medical equipment SC70-5, SOT323-5 (W8) UPS (uninterruptible power supply) Features
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STWD100
OT23-5
SC70-5,
OT323-5
OT23-5,
SC70-5
OT323-5)
STWD100NWWY3F
OT23-5L
DocID014134
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A1s sot23
Abstract: BAW56S E6327 MARKING CODE A1s
Text: BAW56. Silicon Switching Diode • For high-speed switching applications • Common anode configuration BAW56 BAW56T BAW56W BAW56S BAW56U 6 3 4 5 D 3 D 1 D 1 1 D 4 D 2 2 Type BAW56 BAW56S BAW56T BAW56U BAW56W 1 D 2 2 3 Package SOT23 SOT363 SC75 SC74 SOT323
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BAW56.
BAW56
BAW56T
BAW56W
BAW56S
BAW56U
BAW56U
A1s sot23
BAW56S E6327
MARKING CODE A1s
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TRANSISTOR SMD CODE PACKAGE SOT323
Abstract: TRANSISTOR SMD MARKING CODES MARKING SMD PNP TRANSISTOR 2a PMST3904 PMST3906 pmst3906 transistor smd transistor MARKING 2A npn MARKING CODE SMD IC transistor sc-70 marking codes 1325 pnp
Text: PMST3906 40 V, 200 mA PNP switching transistor Rev. 05 — 29 April 2009 Product data sheet 1. Product profile 1.1 General description PNP switching transistor in a SOT323 SC-70 very small Surface-Mounted Device (SMD) plastic package. NPN complement: PMST3904.
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PMST3906
OT323
SC-70)
PMST3904.
PMST3906
TRANSISTOR SMD CODE PACKAGE SOT323
TRANSISTOR SMD MARKING CODES
MARKING SMD PNP TRANSISTOR 2a
PMST3904
pmst3906 transistor
smd transistor MARKING 2A npn
MARKING CODE SMD IC
transistor sc-70 marking codes
1325 pnp
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PBSS4160U
Abstract: PBSS5160U
Text: PBSS5160U 60 V, 1 A PNP low VCEsat BISS transistor Rev. 03 — 11 August 2005 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package.
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PBSS5160U
OT323
SC-70)
PBSS4160U.
PBSS4160U
PBSS5160U
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Untitled
Abstract: No abstract text available
Text: NX7002AKW 60 V, single N-channel Trench MOSFET 11 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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NX7002AKW
OT323
SC-70)
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n channel mosfet vds max 60v, id max 260ma
Abstract: No abstract text available
Text: DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) • • • • • • • • • ID TA = +25°C Package 300mA 3Ω @ VGS = 10V SOT323 60V 260mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMN65D8LW
OT323
260mA
300mA
AEC-Q101
DS35639
n channel mosfet vds max 60v, id max 260ma
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PBSS4160U
Abstract: PBSS5160U
Text: PBSS5160U 60 V, 1 A PNP low VCEsat BISS transistor Rev. 04 — 2 October 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package.
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PBSS5160U
OT323
SC-70)
PBSS4160U.
PBSS5160U
PBSS4160U
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PBSS4160U
Abstract: PBSS5160U
Text: PBSS4160U 60 V, 1 A NPN low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package.
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PBSS4160U
OT323
SC-70)
PBSS5160U.
PBSS4160U
PBSS5160U
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Untitled
Abstract: No abstract text available
Text: PBSS4160U 60 V, 1 A NPN low VCEsat BISS transistor Rev. 03 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package.
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PBSS4160U
OT323
SC-70)
PBSS5160U.
PBSS4160U
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NX3020NAK
Abstract: No abstract text available
Text: NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 30 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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NX3020NAKW
OT323
SC-70)
NX3020NAK
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TRANSISTOR SMD MARKING CODE 2x
Abstract: PBSS4160U PBSS5160U
Text: PBSS4160U 60 V, 1 A NPN low VCEsat BISS transistor Rev. 02 — 19 July 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT323 (SC-70) Surface Mounted Device (SMD) plastic package.
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PBSS4160U
OT323
SC-70)
PBSS5160U.
PBSS4160U
TRANSISTOR SMD MARKING CODE 2x
PBSS5160U
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placeholder for manufacturing site code
Abstract: No abstract text available
Text: PMF87EN 30 V, single N-channel Trench MOSFET 1 August 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMF87EN
OT323
SC-70)
placeholder for manufacturing site code
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BSS138PW
Abstract: TRANSISTOR SMD CODE PACKAGE SOT323
Text: BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using
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BSS138PW
OT323
SC-70)
AEC-Q101
771-BSS138PW115
BSS138PW
TRANSISTOR SMD CODE PACKAGE SOT323
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Untitled
Abstract: No abstract text available
Text: BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using
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BSS138PW
OT323
SC-70)
AEC-Q101
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Untitled
Abstract: No abstract text available
Text: SO T3 23 PMF170XP 20 V, 1 A P-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor FET in a SOT323 (SC-70) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMF170XP
OT323
SC-70)
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Untitled
Abstract: No abstract text available
Text: SO T3 23 NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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NX3020NAKW
OT323
SC-70)
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Untitled
Abstract: No abstract text available
Text: UM2302 60V D-S Small Signal MOSFET UM2302S SOT23-3 UM2302P SOT323 General Description The UM2302 is a low threshold N-channel MOSFET, which has low on-resistance, high reliability and stability, as well as fast switch capability and high saturation current. This benefit
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UM2302
UM2302S
OT23-3
UM2302P
OT323
UM2302
OT23-3
OT323
115mA
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Untitled
Abstract: No abstract text available
Text: SO T3 23 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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BSS138BKW
OT323
SC-70)
AEC-Q101
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A1 SOT323 MOSFET P-CHANNEL
Abstract: No abstract text available
Text: SO T3 23 NX3008PBKW 30 V, 200 mA P-channel Trench MOSFET Rev. 1 — 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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NX3008PBKW
OT323
SC-70)
AEC-Q101
A1 SOT323 MOSFET P-CHANNEL
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bss138bkw
Abstract: No abstract text available
Text: SO T3 23 BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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BSS138BKW
OT323
SC-70)
AEC-Q101
771-BSS138BKW115
BSS138BKW
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BSS84AKW
Abstract: BSS84AKW/DG/B2215 A1 SOT323 MOSFET P-CHANNEL
Text: SO T3 23 BSS84AKW 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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BSS84AKW
OT323
SC-70)
AEC-Q101
771-BSS84AKW115
BSS84AKW
BSS84AKW/DG/B2215
A1 SOT323 MOSFET P-CHANNEL
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A1 SOT323 MOSFET P-CHANNEL
Abstract: transistor sc-70 marking codes FET marking codes sc-70
Text: SO T3 23 BSS84AKW 50 V, 150 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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BSS84AKW
OT323
SC-70)
AEC-Q101
A1 SOT323 MOSFET P-CHANNEL
transistor sc-70 marking codes
FET marking codes sc-70
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 183W PNP Silicon Digital Transistor Type Marking O rdering Code Pin Configuration BCR 183W W Ms Q62702-C 2276 1= B Package 2 = E 3 = C SOT-323 M axim um Ratings Param eter Sym bol C ollector-em itter voltage ^CEO 50 C ollector-base voltage ^CBO
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OCR Scan
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Q62702-C
OT-323
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marking FR PNP SOT323
Abstract: BF824W
Text: Philips Semiconductors Product specification PNP RF transistor BF824W FEATURES • S-mini package. H= FI 1 c APPLICATIONS It is especially Intended for RF stages in FM front-ends in common base configuration. Ü» Top view DESCRIPTION PNP transistor in a plastic SOT323
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OCR Scan
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OT323
BF824W
BF824W
UAU037
OT323)
marking FR PNP SOT323
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