SJS830100
Abstract: No abstract text available
Text: SJS830100 REV ROMMET MARKING .0 40 HIGH CHARACTERS COLOR: CONTRASTING ECN APP'D 6253 JT 8 /6 /0 8 6297 J T 1 /14/09 6431 J T 1 0 /2 8 /0 9 6716 .075 i OT COLOR: SEE TABLE 1 APCD YYW SJS83010X- ATE CODE I .662 REF *1 db WHITE MARKING \ ml ^— WHITE MARKING
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SJS830100
SJS83010X-
SJS830101
SJS830102
SJS830100
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77V1254
Abstract: L200PG 77V126L200
Text: 77V126L200 Device Errata Notes Supplemental Information The revision of the 77V126L200 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1254 L200PG WByywwA XCyywwA Revision Date Code
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77V126L200
77V126L200
77V1254
L200PG
77V1254
L200PG
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77V106
Abstract: YB device marking Code
Text: 77V106 Device Errata Notes Supplemental Information The revision/die stepping of the 77V106 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V106 L25TF <\\ZZF Revision/Stepping Date Code
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77V106
77V106
L25TF
YB device marking Code
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77V1254
Abstract: No abstract text available
Text: 77V1254L25 Device Errata Notes Supplemental Information The revision of the 77V1254L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location
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77V1254L25
77V1254L25
77V1254
L25PG
77V1254
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MARKING PARI SC70-6
Abstract: sot363 marking qs sm905
Text: SÌ1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) Id r D S (o n) (£2) A V P (A) 0.385 e VGS = 4.5 V 0.70 0.630 9 VGS = 2.5 V 0.54 20 SOT-363 SC-70 (6-LEADS) Marking Code L otTraceability and Date Code L— Pari # Code Top View
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1902DL
OT-363
SC-70
S-99188--
01-Nov-99
MARKING PARI SC70-6
sot363 marking qs
sm905
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77V1254
Abstract: 77V1254L25
Text: 77V1254L25 Device Errata Notes Supplemental Information The revision of the 77V1254L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location
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77V1254L25
77V1254L25
77V1254
L25PG
77V1254
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77V1253
Abstract: 77V1254
Text: 77V1253L25 Device Errata Notes Supplemental Information The revision of the 77V1253L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1253 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location
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77V1253L25
77V1253L25
77V1253
77V1254
L25PG
77V1253
77V1254
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Untitled
Abstract: No abstract text available
Text: 77V1054L25 Device Errata Notes Supplemental Information The revision of the 77V1054L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1054 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location
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77V1054L25
77V1054
77V1254
L25PG
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Untitled
Abstract: No abstract text available
Text: 77V1053L25 Device Errata Notes Supplemental Information The revision of the 77V1053L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1053 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location
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77V1053L25
77V1053
77V1254
L25PG
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77V1254
Abstract: 77V1264
Text: 77V1264L200 Device Errata Notes Supplemental Information The revision of the 77V1264L200 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1254 77V1264 L200PG WByywwA XCyywwA Revision
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77V1264L200
77V1264L200
77V1254
77V1264
L200PG
77V1254
77V1264
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77V106
Abstract: 77V107 YB device marking Code
Text: 77V107 Device Errata Notes Supplemental Information The revision/die stepping of the 77V107 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V106 77V107 L25TF <\\ZZF Revision/Stepping
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77V107
77V107
77V106
L25TF
77V106
YB device marking Code
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Untitled
Abstract: No abstract text available
Text: ,'79 HYLFH UUDWD ' 1RWHV 6XSSOHPHQWDO ,QIRU ,QIRUPDWLRQ PDWLRQ The revision of the 77V1253 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1253 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location
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77V1253
L25PG
IDT77V1253
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YB device marking Code
Abstract: No abstract text available
Text: 9 'HYLFH UUDWD 1RWHV 6XSSOHPHQWDO ,QIRU ,QIRUPDWLRQ PDWLRQ The revision/die stepping of the 77V106 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V106 L25TF Yyywwc Revision/Stepping
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77V106
L25TF
YB device marking Code
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77V1254L200
Abstract: No abstract text available
Text: 9/ 'HYLFH UUDWD 1RWHV 6XSSOHPHQWDO ,QIRU ,QIRUPDWLRQ PDWLRQ The revision of the 77V1254L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. This errata does not apply to the 77V1254L200 device.
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77V1254L25
77V1254L200
77V1254
L25PG
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION MICRONAS Edition May 31, 2000 6251-528-1AI HAL 1000 Programmable Hall Switch HAL 1000 ADVANCE INFORMATION Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. Introduction Major Applications Features Marking Code
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6251-528-1AI
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TO92UT-1
Abstract: TO92UT
Text: DATA SHEET MICRONAS Edition March 4, 2004 6251-528-1DS HAL1000 Programmable Hall Switch MICRONAS HAL1000 DATA SHEET Contents Page Section Title 3 3 3 4 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. 1.7. Introduction Major Applications Features Marking Code
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HAL1000
6251-528-1DS
HAL1000
TO92UT-1
TO92UT
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"Angle Sensor"
Abstract: hall effect interface WITH ADC HAll EFFECT SENSOR CODING inductive sensor oscillator circuit 800E DIN40839 HAL800 HAL800UT-A DSA003772
Text: PRELIMINARY DATA SHEET MICRONAS Edition Oct. 20, 1999 6251-441-1DS HAL 800 Programmable Linear Hall Effect Sensor MICRONAS HAL 800 Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. Introduction Major Applications Features Marking Code
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6251-441-1DS
"Angle Sensor"
hall effect interface WITH ADC
HAll EFFECT SENSOR CODING
inductive sensor oscillator circuit
800E
DIN40839
HAL800
HAL800UT-A
DSA003772
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800E
Abstract: HAL800 HAL800UT-A HAll EFFECT SENSOR CODING hall sensors for magnetic measurements
Text: MICRONAS INTERMETALL Edition Oct. 20, 1999 6251-109-4E 6251-441-1DS HAL800 Programmable Linear Hall Effect Sensor MICRONAS HAL 800 Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. Introduction Major Applications Features Marking Code
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6251-109-4E
6251-441-1DS
HAL800
800E
HAL800
HAL800UT-A
HAll EFFECT SENSOR CODING
hall sensors for magnetic measurements
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Untitled
Abstract: No abstract text available
Text: MICRONAS Edition Oct. 20, 1999 6251-109-4E 6251-441-1DS HAL800 Programmable Linear Hall Effect Sensor MICRONAS HAL 800 Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. Introduction Major Applications Features Marking Code Operating Junction Temperature Range TJ
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HAL800
6251-109-4E
6251-441-1DS
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Ceramic Capacitors
Abstract: sic-safco capacitor capacitor sic-safco Sic-Safco tableau des boitiers cms FIRADEC condensateur chimique 1000 uf EUROFARAD smd ceramic capacitor Microspire varistance
Text: 082 Paris Colombes St Nazaire Illange Lagny Marmoutier EUROFARAD Siège social / Headquarters 93, rue Oberkampf F - 75540 PARIS CEDEX 11 Tél. : +33 0 1 49 23 10 00 E-mail : info @ eurofarad.com www.eurofarad.com FIRADEC Casablanca Usines / Plants 23, rue Jeanne d'Arc
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royal ohm chip resistor 1206
Abstract: royal ohm chip resistor 0805 royal ohm chip resistor 0603 RMC 0805 Royal OHM RMC0805 royal ohm chip resistor 3.9 K 1206 RMC 0603 1 ROYAL OHM 0402 0805 royal
Text: ROYAL OHM SPECIFICATION FOR APPROVAL FARNELL ELECTRONIC COMPONENTS. Description :_Chip Resistors_ HJW8xxxxxTxx RMC 1/8 W 1206 +/-1% & 5% HMWAxxxxxTxx RMC 1/10 W (0805) +/- 1% & 5% Pari no. : HPWGxxxxxTxx RMC 1/16 W (0603) + /- 1%& 5%
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-226K,
T/R-5000
1/10W
1/16W
T/R-5000
HJW8D3300T50
HMWAB0330T50
HPWGF3300T50
royal ohm chip resistor 1206
royal ohm chip resistor 0805
royal ohm chip resistor 0603
RMC 0805
Royal OHM
RMC0805
royal ohm chip resistor 3.9 K 1206
RMC 0603 1
ROYAL OHM 0402
0805 royal
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96BGA
Abstract: oscillator 10.66 ghz
Text: VITESSE SEMICONDUCTOR CORPORATION Product Brief 9.9/10.7 Gbit/sec SONET/SDH 1:16 Demultiplexer withh Clock Generator VSC8172 Features • 10 Gbit/sec SONET/SDH 1:16 Demux • No Reference Clock Detection • Integrated Clock and Data Recovery • Parity Bit Calculation
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VSC8172
OC-192
STM-64
VSC8172
16-bit
G52275-0,
96BGA
oscillator 10.66 ghz
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74HC28
Abstract: No abstract text available
Text: M74HC280 9-bit parity generator Datasheet - production data • Pin and function compatible with 74 series 280 • ESD performance – HBM: 2 kV – MM: 200 V – CDM: 1 kV SO14 TSSOP14 Description The M74HC280 is a high-speed CMOS 9-bit parity generator fabricated with silicon gate
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M74HC280
TSSOP14
M74HC280
DocID1938
74HC28
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SJS830201
Abstract: No abstract text available
Text: SJS830200 REV ECN APP'D 6253 JT 8 /6 /0 8 6297 JT 1/14/09 6431 JT 1 0 /2 8 /0 9 6716. SJS830200 SJS830200 0 .4 4 8 TA BLE 1 - PARIr NUMBER SCHEME KEY C YELLOW KEY B (GREEN) NOTES: MATERIALS: HOUSING: P A 6 /6 CONTACT RETAINER: STAINLESS STEEL GROMMET: SILICONE RUBBER PER A-A-59588
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SJS830200
TR-1592.
SJS83010X
SJS830202
SJS830201
SJS830200
SJS830201
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