sot marking code ZS
Abstract: Transistor BFR MARKING CODE R7 RF TRANSISTOR sot-23 npn marking code VD BFR106 Transistor BFR 30 sot-23 M
Text: NPN Silicon RF Transistor BFR 106 • For low-noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code
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OCR Scan
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OT-23
sot marking code ZS
Transistor BFR
MARKING CODE R7 RF TRANSISTOR
sot-23 npn marking code VD
BFR106
Transistor BFR 30
sot-23 M
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bft93
Abstract: transistor BF 199
Text: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OCR Scan
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BFT93
BFT93
Q62702-F1063
OT-23
900MHz
transistor BF 199
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LM309K
Abstract: nsc marking QML MARKING DETAILS 40 lead ceramic flatpack ALPHA YEAR DATE CODE 5962-9553601QPA LM7171AMJ-QML top marking codes CERAMIC FLATPACK ALPHA YEAR CODE
Text: N Top Marking Information for Mil/Aero Products TOP MARK INFORMATION Not all marks shown may appear on parts 883 883&&38510 38510Date DateCode Code 2nd Last 2nddigit: digit: Lastdigit digitof ofthe theyear yearwafer wafersort sortwas wasperformed. performed.
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MIL-STD-883
MIL-STD-883*
MIL-STD-883.
LM309K
nsc marking
QML MARKING DETAILS
40 lead ceramic flatpack
ALPHA YEAR DATE CODE
5962-9553601QPA
LM7171AMJ-QML
top marking codes
CERAMIC FLATPACK
ALPHA YEAR CODE
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OCR Scan
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BFT93
Q62702-F1063
OT-23
235b05
G122211
900MHz
235fc
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration
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OCR Scan
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Q62702-F1062
OT-23
BFT92
H35bD5
900MHz
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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OCR Scan
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900MHz
OT-343
BFP182W
Q62702-F1502
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Untitled
Abstract: No abstract text available
Text: BEE D • ö53b32Q QQ175SS b WÊSIP NPN Silicon Darlington Transistor SMBT 6427 _ SIEMENS/ SPCLi SEMICONDS T-Z'l -X*? _ • For general amplifier applications • High collector current • High current gain Type Marking Ordering code for versions in bulk
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OCR Scan
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53b32Q
QQ175SS
23b320
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transistor bc 577
Abstract: transistor bc 103
Text: SIEMENS BC 847S NPN Silicon AF Transistor Array >For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package F] FI FI liJ lU Type Marking Ordering Code
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OCR Scan
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Q62702-2372
OT-363
flE35bDS
BC847S
EHP00365
fl235b05
transistor bc 577
transistor bc 103
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCP 51M . BCP53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN Type Marking Ordering Code Pin Configuration BCP 51M
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OCR Scan
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BCP53M
Q62702-C2592
Q62702-C2593
Q62702-C2594
SCT-595
6E35bOS
02BShD5
B35b05
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012n3
Abstract: No abstract text available
Text: SIEMENS BFP193 NPN Silicon RF Transistor « For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F=1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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OCR Scan
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BFP193
900MHz
Q62702-F1282
OT-143
012n3
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Untitled
Abstract: No abstract text available
Text: S IE M E N S BF 775A NPN Silicon RF Transistor • Especially suitable for amplifiers and TV-sat tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF 775A LGs Q62702-F1250 1 =B Package
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OCR Scan
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Q62702-F1250
OT-23
IS21/S
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marking GG
Abstract: marking code 604 SOT23
Text: NPN Silicon RF Transistor BFR 93P • For low -distortion broadband am plifiers up to 1 GHz at collector currents from 2 to 30 mA. c ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Package
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OCR Scan
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OT-23
marking GG
marking code 604 SOT23
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PDF
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SOT23 KJA
Abstract: No abstract text available
Text: SIEMENS BCR 135 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=2.2kiî, R2=47kft Marking Ordering Code Pin Configuration BCR 135 WJs 1 =B Package UJ II CNJ Q62702-C2257 CO II O Type
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OCR Scan
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47kft)
Q62702-C2257
OT-23
Resistan200
SOT23 KJA
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PDF
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K2I transistor
Abstract: TRANSISTOR K 135
Text: SIEMENS BF775W NPN Silicon RF Transistor • Especially suitable for TV-sat and UHF tuners LOs Q62702-F1520 1=B m BF 775W ro II ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration Type 3=C Package
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OCR Scan
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BF775W
Q62702-F1520
OT-323
321/S
K2I transistor
TRANSISTOR K 135
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 148 NPN Silicon Digital Transistor ►Switching circuit, inverter, interface circuit, driver circuit » Built in bias resistor Ri=47kfl, R2=47kfi Type Marking Ordering Code Pin Configuration BCR 148 WEs Q62702-C2261 1 =B Package 2= E 3=C SOT-23
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OCR Scan
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47kfl,
47kfi)
Q62702-C2261
OT-23
0235b05
Q12Q7b5
015D7bB
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PDF
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Untitled
Abstract: No abstract text available
Text: 32E D • Ö23b32ü 0017251 3 ■ SIP NPN Silicon Transistors SMBT 6428 SMBT 6429 17 SIEMENS/ SPCL-. SEMICONDS • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage Type Marking Ordering code for
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OCR Scan
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23b32Ã
QQ17Eb3
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resistor bgr 2
Abstract: 9025l R20 marking BGR15 R15HB Steatite Wirewound Resistors 5 watt ceramic BGR5 bgr20 BSR10
Text: POWER TYPE RESISTORS wirewound POWER TYPE RESISTOS Rectangular Type Bwr • bgr METAL OXIDE Rectangular Type BSR STRUCTURE 1 2 3 4 5 6 7 8 Identification produCt code coating color marking None Ceramic Alpha Numeric (Type, Power Rating, R-value, Tolerance,
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D-25578
resistor bgr 2
9025l
R20 marking
BGR15
R15HB
Steatite
Wirewound Resistors 5 watt ceramic
BGR5
bgr20
BSR10
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 191 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit »Built in bias resistor R1=22kiî, Rg=22ki2 Type Marking Ordering Code Pin Configuration BCR 191 WOs 1=B Q62702-C2264 Package 2=E 3=C SOT-23
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OCR Scan
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22ki2)
Q62702-C2264
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBTA 92 PNP Silicon High Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 42 NPN Type Marking Ordering Code Pin Configuration SMBTA 92 s2D Q68000-A6479 1=B 2=E Package 3=C SOT-23
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OCR Scan
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Q68000-A6479
OT-23
Jan-22-1999
100MHz
EHP00879
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 116 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=4.7k£2, R2=47k£2 n TT Ordering Code Pin Configuration WGs Q62702-C2337 1= B Package 2=E o Marking BCR 116 II CO Type
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OCR Scan
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Q62702-C2337
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: 32E D • 023b3S0 001731e b H S I R NPN Silicon Switching Transistor _ SIE M E N S / SPCLi SEMICONDS -p. 3g- j| SXT 3904 _ • High current gain: 0.1 to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering code for
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OCR Scan
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023b3S0
001731e
T-35-11
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koa w1
Abstract: No abstract text available
Text: POWER TYPE RESISTORS wirewound POWER TYPE RESISTORS Rectangular Type Bwr • bgr METAL OXIDE STRUCTURE Rectangular Type BSR 1 2 3 4 5 6 7 8 Identification produCt code marking coating color B R None Ceramic Alpha Numeric (Type, Power Rating, R-value, Tolerance,
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Original
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D-25578
koa w1
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 553 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=2.2k£i, Ft2=2.2k£2 ^ FI 4 a r ^ r z Type Marking Ordering Code Pin Configuration BCR 553 XBs 1=B Q62702-C2371
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OCR Scan
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Q62702-C2371
OT-23
fl235bG5
0235bD
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 196W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=47k£i, Ft2=22kf2 PI tr n r Marking Ordering Code Pin Configuration BCR 196W WXs UPON INQUIRY 1=B Package o II
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OCR Scan
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22kf2)
OT-323
BCR196W
fl235b05
235b05
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